SE9703295D0 - Electrical devices and a method of manufacturing the same - Google Patents

Electrical devices and a method of manufacturing the same

Info

Publication number
SE9703295D0
SE9703295D0 SE9703295A SE9703295A SE9703295D0 SE 9703295 D0 SE9703295 D0 SE 9703295D0 SE 9703295 A SE9703295 A SE 9703295A SE 9703295 A SE9703295 A SE 9703295A SE 9703295 D0 SE9703295 D0 SE 9703295D0
Authority
SE
Sweden
Prior art keywords
region
manufacturing
regions
insulating layer
conductive element
Prior art date
Application number
SE9703295A
Other languages
English (en)
Other versions
SE9703295L (sv
SE515783C2 (sv
Inventor
Andrej Litwin
Sven Erik Mattisson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=20408227&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SE9703295(D0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9703295A priority Critical patent/SE515783C2/sv
Publication of SE9703295D0 publication Critical patent/SE9703295D0/sv
Priority to PCT/SE1998/001554 priority patent/WO1999013514A2/en
Priority to IL15939898A priority patent/IL159398A0/xx
Priority to CNB988090767A priority patent/CN100342553C/zh
Priority to IL15918798A priority patent/IL159187A/xx
Priority to AU91924/98A priority patent/AU741339B2/en
Priority to EEP200000047A priority patent/EE200000047A/xx
Priority to TR2000/00511T priority patent/TR200000511T2/xx
Priority to CN200310116398.7A priority patent/CN100557945C/zh
Priority to KR1020007002614A priority patent/KR100552916B1/ko
Priority to IL13441698A priority patent/IL134416A/en
Priority to BRPI9811639A priority patent/BRPI9811639B1/pt
Priority to JP2000511198A priority patent/JP2001516955A/ja
Priority to US09/150,231 priority patent/US6100770A/en
Priority to MYPI98004134A priority patent/MY115602A/en
Priority to ARP980104540A priority patent/AR017100A1/es
Publication of SE9703295L publication Critical patent/SE9703295L/sv
Publication of SE515783C2 publication Critical patent/SE515783C2/sv
Priority to JP2011161985A priority patent/JP2012028782A/ja
Priority to JP2013185188A priority patent/JP5848297B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0098—Functional aspects of oscillators having a balanced output signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
SE9703295A 1997-09-11 1997-09-11 Elektriska anordningar jämte förfarande för deras tillverkning SE515783C2 (sv)

Priority Applications (18)

Application Number Priority Date Filing Date Title
SE9703295A SE515783C2 (sv) 1997-09-11 1997-09-11 Elektriska anordningar jämte förfarande för deras tillverkning
BRPI9811639A BRPI9811639B1 (pt) 1997-09-11 1998-09-01 dispositivos elétricos, oscilador controlado por tensão, e, processo para fabricar um dispositivo elétrico
JP2000511198A JP2001516955A (ja) 1997-09-11 1998-09-01 電気デバイスおよびその製造方法
TR2000/00511T TR200000511T2 (tr) 1997-09-11 1998-09-01 Elektrikli cihazlar ve bunları imal etmek için bir yöntem.
IL13441698A IL134416A (en) 1997-09-11 1998-09-01 Electrical devices
CNB988090767A CN100342553C (zh) 1997-09-11 1998-09-01 电器件及其制造方法
IL15918798A IL159187A (en) 1997-09-11 1998-09-01 Voltage controlled oscillator
AU91924/98A AU741339B2 (en) 1997-09-11 1998-09-01 Electrical devices and a method of manufacturing the same
EEP200000047A EE200000047A (et) 1997-09-11 1998-09-01 Elektriline seadis ja selle valmistamise meetod
PCT/SE1998/001554 WO1999013514A2 (en) 1997-09-11 1998-09-01 Electrical devices and a method of manufacturing the same
CN200310116398.7A CN100557945C (zh) 1997-09-11 1998-09-01 电器件及其制造方法
KR1020007002614A KR100552916B1 (ko) 1997-09-11 1998-09-01 전기 소자 및 그 제조방법
IL15939898A IL159398A0 (en) 1997-09-11 1998-09-01 A method of manufacturing an electrical device
US09/150,231 US6100770A (en) 1997-09-11 1998-09-09 MIS transistor varactor device and oscillator using same
MYPI98004134A MY115602A (en) 1997-09-11 1998-09-10 Mis transistor varactor device and osillator using same
ARP980104540A AR017100A1 (es) 1997-09-11 1998-09-11 Un aparato electrico, particularmente, un varactor, un oscilador de voltaje controlado, un circuito de bucle de enganche de fase y un aparato de comunicacion por radio que incorporan dicho aparato, y un metodo para fabricar este ultimo
JP2011161985A JP2012028782A (ja) 1997-09-11 2011-07-25 電気デバイス
JP2013185188A JP5848297B2 (ja) 1997-09-11 2013-09-06 電気デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9703295A SE515783C2 (sv) 1997-09-11 1997-09-11 Elektriska anordningar jämte förfarande för deras tillverkning

Publications (3)

Publication Number Publication Date
SE9703295D0 true SE9703295D0 (sv) 1997-09-11
SE9703295L SE9703295L (sv) 1999-03-12
SE515783C2 SE515783C2 (sv) 2001-10-08

Family

ID=20408227

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9703295A SE515783C2 (sv) 1997-09-11 1997-09-11 Elektriska anordningar jämte förfarande för deras tillverkning

Country Status (13)

Country Link
US (1) US6100770A (sv)
JP (3) JP2001516955A (sv)
KR (1) KR100552916B1 (sv)
CN (2) CN100557945C (sv)
AR (1) AR017100A1 (sv)
AU (1) AU741339B2 (sv)
BR (1) BRPI9811639B1 (sv)
EE (1) EE200000047A (sv)
IL (3) IL134416A (sv)
MY (1) MY115602A (sv)
SE (1) SE515783C2 (sv)
TR (1) TR200000511T2 (sv)
WO (1) WO1999013514A2 (sv)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320474B1 (en) * 1998-12-28 2001-11-20 Interchip Corporation MOS-type capacitor and integrated circuit VCO using same
US6369671B1 (en) * 1999-03-30 2002-04-09 International Business Machines Corporation Voltage controlled transmission line with real-time adaptive control
US6271733B1 (en) * 1999-12-13 2001-08-07 Agere Systems Guardian Corp. Integrated oscillator circuit with a memory based frequency control circuit and associated methods
US6407412B1 (en) * 2000-03-10 2002-06-18 Pmc-Sierra Inc. MOS varactor structure with engineered voltage control range
US7000119B1 (en) 2000-04-20 2006-02-14 Realnetworks, Inc. Instruction/data protection employing derived obscuring instruction/data
US6504443B1 (en) 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
US6642607B2 (en) * 2001-02-05 2003-11-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US6621362B2 (en) 2001-05-18 2003-09-16 Broadcom Corporation Varactor based differential VCO band switching
DE10126328A1 (de) * 2001-05-30 2002-12-12 Infineon Technologies Ag Integrierte, abstimmbare Kapazität
KR100530739B1 (ko) * 2001-06-28 2005-11-28 한국전자통신연구원 가변 수동소자 및 그 제조방법
US7235862B2 (en) 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
DE10139396A1 (de) * 2001-08-10 2003-01-16 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einem Varaktor
US6667539B2 (en) 2001-11-08 2003-12-23 International Business Machines Corporation Method to increase the tuning voltage range of MOS varactors
US6521506B1 (en) 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
US7169679B2 (en) * 2002-01-07 2007-01-30 Honeywell International Inc. Varactor with improved tuning range
US7081663B2 (en) * 2002-01-18 2006-07-25 National Semiconductor Corporation Gate-enhanced junction varactor with gradual capacitance variation
DE10206375A1 (de) * 2002-02-15 2003-06-26 Infineon Technologies Ag Integrierte, abstimmbare Kapazität
JP4153233B2 (ja) * 2002-04-18 2008-09-24 富士通株式会社 ｐｎバラクタ
DE10222764B4 (de) * 2002-05-15 2011-06-01 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Halbleitervaraktor und damit aufgebauter Oszillator
US6608362B1 (en) 2002-08-20 2003-08-19 Chartered Semiconductor Manufacturing Ltd. Method and device for reducing capacitive and magnetic effects from a substrate by using a schottky diode under passive components
KR100460273B1 (ko) * 2003-03-25 2004-12-08 매그나칩 반도체 유한회사 모스 바랙터의 제조방법
JP4046634B2 (ja) 2003-04-08 2008-02-13 Ｎｅｃエレクトロニクス株式会社 電圧制御型容量素子及び半導体集積回路
JP2004311858A (ja) * 2003-04-10 2004-11-04 Nec Electronics Corp 半導体集積回路装置
US6825089B1 (en) * 2003-06-04 2004-11-30 Agere Systems Inc. Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
JP2005019487A (ja) 2003-06-24 2005-01-20 Nippon Precision Circuits Inc Ｍｏｓ型可変容量素子及び電圧制御発振回路
US7075379B2 (en) * 2003-07-23 2006-07-11 Agency For Science, Technology And Research Low supply-sensitive and wide tuning-range CMOS LC-tank voltage-controlled oscillator monolithic integrated circuit
TWI373925B (en) * 2004-02-10 2012-10-01 Tridev Res L L C Tunable resonant circuit, tunable voltage controlled oscillator circuit, tunable low noise amplifier circuit and method of tuning a resonant circuit
US7038527B2 (en) * 2004-02-25 2006-05-02 Analog Devices, Inc. MOS varactor for LC VCOs
SE527215C2 (sv) * 2004-03-23 2006-01-24 Infineon Technologies Ag Integrerad omkopplingsanordning
CN100353568C (zh) * 2004-04-07 2007-12-05 联华电子股份有限公司 可变电容器与差动式可变电容器
JP4857531B2 (ja) * 2004-07-08 2012-01-18 三菱電機株式会社 半導体装置
JP2006066897A (ja) * 2004-07-30 2006-03-09 Semiconductor Energy Lab Co Ltd 容量素子及び半導体装置
EP1633005A1 (en) * 2004-09-03 2006-03-08 Infineon Technologies AG Monolithically integrated capacitor
US20080185625A1 (en) * 2004-09-10 2008-08-07 University Of Florida Research Foundation, Inc. Source/Drain to Gate Capacitive Switches and Wide Tuning Range Varactors
US20060125012A1 (en) * 2004-12-09 2006-06-15 Honeywell International Inc. Varactor
US7323948B2 (en) * 2005-08-23 2008-01-29 International Business Machines Corporation Vertical LC tank device
DE102005061683B4 (de) * 2005-12-21 2011-12-08 Forschungsverbund Berlin E.V. Vorrichtung, Tastkopf und Verfahren zur galvanisch entkoppelten Übertragung eines Messsignals
US20080149983A1 (en) * 2006-12-20 2008-06-26 International Business Machines Corporation Metal-oxide-semiconductor (mos) varactors and methods of forming mos varactors
US7825441B2 (en) * 2007-06-25 2010-11-02 International Business Machines Corporation Junction field effect transistor with a hyperabrupt junction
US8130051B2 (en) * 2008-02-06 2012-03-06 Broadcom Corporation Method and system for varactor linearization
US8008748B2 (en) * 2008-12-23 2011-08-30 International Business Machines Corporation Deep trench varactors
CN101924142B (zh) * 2009-06-17 2011-09-14 中国科学院微电子研究所 一种GaAs肖特基变容二极管及其制作方法
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8779861B2 (en) * 2011-10-19 2014-07-15 Newport Media, Inc. Multi-phase voltage controlled oscillator using capacitance degenerated single ended transconductance stage and inductance/capacitance load
US9299699B2 (en) 2013-03-13 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate and complementary varactors in FinFET process
WO2015182363A1 (ja) * 2014-05-30 2015-12-03 インターチップ株式会社 集積ｍｏｓ型バリキャップおよびこれを有する電圧制御発振器、フィルター
EP3238248A4 (en) 2014-12-24 2018-08-29 Intel Corporation Cmos varactor with increased tuning range
US9837555B2 (en) 2015-04-15 2017-12-05 Futurewei Technologies, Inc. Apparatus and method for a low loss coupling capacitor
KR102345676B1 (ko) * 2015-09-09 2021-12-31 에스케이하이닉스 주식회사 모스 버렉터 및 이를 포함하는 반도체 집적소자
US10608123B2 (en) 2017-05-08 2020-03-31 Qualcomm Incorporated Metal oxide semiconductor varactor quality factor enhancement
KR20200058192A (ko) 2018-11-19 2020-05-27 이용재 압력 밸런스 기능을 갖는 가스용기 밸브
JP6720407B1 (ja) 2018-11-21 2020-07-08 株式会社エイチ・ディー・エス 多面体玩具
US11515434B2 (en) * 2019-09-17 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupling capacitor and method of making the same
CN111602254B (zh) * 2020-04-22 2021-03-23 长江存储科技有限责任公司 可变电容器

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878482A (en) * 1973-10-04 1975-04-15 Gen Electric Wide-band, voltage controlled oscillator utilizing complimentary metal oxide semiconductor integrated circuits and a constant current MOS-FET field effect transistor
US3904988A (en) * 1974-09-11 1975-09-09 Motorola Inc CMOS voltage controlled oscillator
JPS53139959A (en) * 1977-05-13 1978-12-06 Hitachi Ltd Amplifying circuit
JPS5530862A (en) * 1978-08-25 1980-03-04 Seiko Instr & Electronics Ltd Method of making semiconductor device
DE2915134A1 (de) * 1979-04-12 1980-10-16 Siemens Ag Steuerbare oszillatoranordnung
JPS57113264A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Manufacture of mis type capacitor
GB2104725B (en) * 1981-07-17 1986-04-09 Clarion Co Ltd Variable capacitance device
US4450416A (en) * 1981-08-17 1984-05-22 General Electric Company Voltage controlled oscillator
JPS5923569A (ja) * 1982-07-29 1984-02-07 Matsushita Electronics Corp 半導体可変容量素子
JPS59104180A (ja) * 1982-12-06 1984-06-15 Clarion Co Ltd 可変容量ダイオ−ド
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
JPS61292358A (ja) * 1985-06-19 1986-12-23 Fujitsu Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS62156853A (ja) * 1985-12-28 1987-07-11 Toshiba Corp Ｍｏｓ型可変容量回路
US4692717A (en) * 1986-03-14 1987-09-08 Western Digital Corporation Voltage controlled oscillator with high speed current switching
JPS6461070A (en) * 1987-09-01 1989-03-08 Nec Corp Semiconductor device
US4853655A (en) * 1987-11-27 1989-08-01 American Telephone And Telegraph Company, At&T Bell Laboratories High frequency CMOS oscillator
US4887053A (en) * 1987-11-27 1989-12-12 American Telephone And Telegraph Company High frequency VLSI oscillator
JPH01146351A (ja) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp 半導体装置
US5107227A (en) * 1988-02-08 1992-04-21 Magellan Corporation (Australia) Pty. Ltd. Integratable phase-locked loop
JPH0294914A (ja) * 1988-09-30 1990-04-05 Nec Corp 電圧制御型発振器
US4866567A (en) * 1989-01-06 1989-09-12 Ncr Corporation High frequency integrated circuit channel capacitor
JP2786467B2 (ja) * 1989-03-15 1998-08-13 沖電気工業株式会社 Ｃｍｏｓ半導体集積回路
JPH03278579A (ja) * 1990-03-28 1991-12-10 Nec Corp 半導体装置
US5045966A (en) * 1990-09-17 1991-09-03 Micrel Semiconductor Method for forming capacitor using FET process and structure formed by same
JPH0477266U (sv) * 1990-11-16 1992-07-06
US5061907A (en) * 1991-01-17 1991-10-29 National Semiconductor Corporation High frequency CMOS VCO with gain constant and duty cycle compensation
FR2679702A1 (fr) * 1991-07-23 1993-01-29 Thomson Csf Element semi-conducteur a capacite variable pour circuit integre en micro-ondes et circuit integre equipe d'au moins un tel element.
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5175512A (en) * 1992-02-28 1992-12-29 Avasem Corporation High speed, power supply independent CMOS voltage controlled ring oscillator with level shifting circuit
US5218325A (en) * 1992-03-31 1993-06-08 Motorola, Inc. Low noise oscillator
KR950003233B1 (ko) * 1992-05-30 1995-04-06 삼성전자 주식회사 이중층 실리사이드 구조를 갖는 반도체 장치 및 그 제조방법
US5300898A (en) * 1992-07-29 1994-04-05 Ncr Corporation High speed current/voltage controlled ring oscillator circuit
JP2951128B2 (ja) * 1992-10-20 1999-09-20 三洋電機株式会社 電圧制御型発振回路
US5365204A (en) * 1993-10-29 1994-11-15 International Business Machines Corporation CMOS voltage controlled ring oscillator
JPH07176952A (ja) * 1993-12-20 1995-07-14 Sony Corp 発振器
JPH07162231A (ja) * 1993-12-08 1995-06-23 Nec Corp 発振回路
US5396195A (en) * 1993-12-13 1995-03-07 At&T Corp. Low-power-dissipation CMOS oscillator circuits
JP3215258B2 (ja) * 1994-04-05 2001-10-02 富士通株式会社 Ｐｌｌ集積回路および調整方法
US5483207A (en) * 1994-12-30 1996-01-09 At&T Corp. Adiabatic MOS oscillators
JPH08102526A (ja) * 1995-07-14 1996-04-16 Rohm Co Ltd Ｃｍｏｓ半導体装置
DE19631389A1 (de) * 1995-08-29 1997-03-06 Hewlett Packard Co Monolithischer spannungsvariabler Kondensator
JPH0993124A (ja) * 1995-09-27 1997-04-04 Ando Electric Co Ltd 広帯域ｖｃｏ回路
US5629652A (en) * 1996-05-09 1997-05-13 Analog Devices Band-switchable, low-noise voltage controlled oscillator (VCO) for use with low-q resonator elements
US5914513A (en) * 1997-06-23 1999-06-22 The Board Of Trustees Of The University Of Illinois Electronically tunable capacitor

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IL159187A0 (en) 2004-06-01
JP5848297B2 (ja) 2016-01-27
SE9703295L (sv) 1999-03-12
KR20010023918A (ko) 2001-03-26
JP2014039043A (ja) 2014-02-27
WO1999013514A3 (en) 1999-06-24
IL159398A0 (en) 2004-06-01
AU741339B2 (en) 2001-11-29
IL134416A0 (en) 2001-04-30
CN1270704A (zh) 2000-10-18
CN100342553C (zh) 2007-10-10
BR9811639A (pt) 2000-08-08
SE515783C2 (sv) 2001-10-08
KR100552916B1 (ko) 2006-02-22
TR200000511T2 (tr) 2000-06-21
IL159187A (en) 2005-06-19
JP2012028782A (ja) 2012-02-09
IL134416A (en) 2004-08-31
US6100770A (en) 2000-08-08
CN1508966A (zh) 2004-06-30
BRPI9811639B1 (pt) 2016-08-02
AU9192498A (en) 1999-03-29
EE200000047A (et) 2000-10-16
MY115602A (en) 2003-07-31
CN100557945C (zh) 2009-11-04
WO1999013514A2 (en) 1999-03-18
JP2001516955A (ja) 2001-10-02
AR017100A1 (es) 2001-08-22

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