RU2012112941A - Способ получения кремнистой пленки и используемая в нем жидкость для обработки полисилазанового покрытия - Google Patents

Способ получения кремнистой пленки и используемая в нем жидкость для обработки полисилазанового покрытия Download PDF

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RU2012112941A
RU2012112941A RU2012112941/28A RU2012112941A RU2012112941A RU 2012112941 A RU2012112941 A RU 2012112941A RU 2012112941/28 A RU2012112941/28 A RU 2012112941/28A RU 2012112941 A RU2012112941 A RU 2012112941A RU 2012112941 A RU2012112941 A RU 2012112941A
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polysilazane
forming
silicon film
compound
film
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Юки ОЗАКИ
Масанобу ХАЯСИ
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АЗ Электроник Матириалс АйПи (Джапан) КК
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
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    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
    • C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON

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Abstract

1. Способ образования кремнистой пленки, включающийстадию образования полисилазановой пленки, в которой композицию, содержащую полисилазановое соединение и ускоритель реакции превращения оксида кремния, наносят на поверхность подложки с образованием полисилазановой пленки;стадию нанесения промотора, в которой раствор для обработки полисилазановой пленки наносят на упомянутую полисилазановую пленку; истадию затвердевания, в которой упомянутое полисилазановое соединение превращают в кремнистую пленку при температуре 300°С или меньше;гдеупомянутый раствор для обработки полисилазановой пленки содержит растворитель, от 0,5 до 10% масс. пероксида водорода и от 10 до 98% масс. спирта в расчете на его полную массу.2. Способ образования кремнистой пленки по п.1, где упомянутое полисилазановое соединение представляет собой пергидрополисилазановое соединение.3. Способ образования кремнистой пленки по п.1 или 2, где упомянутый ускоритель реакции превращения оксида кремния представляет собой карбоксилат металла, N-гетероциклическое соединение или аминовое соединение.4. Способ образования кремнистой пленки по п.1 или 2, где упомянутый спирт выбирают из группы, состоящей из моноспиртов, диолов и оксиэфиров, каждый из которых имеет от 1 до 8 атомов углерода.5. Способ образования кремнистой пленки по п.1 или 2, где упомянутый растворитель представляет собой воду.6. Способ образования кремнистой пленки по п.1 или 2, где упомянутую стадию затвердевания выполняют при комнатной температуре.7. Раствор для обработки полисилазановой пленкикоторый наносят на полисилазановую пленку, образованную путем нанесения композиции, содержащей �

Claims (7)

1. Способ образования кремнистой пленки, включающий
стадию образования полисилазановой пленки, в которой композицию, содержащую полисилазановое соединение и ускоритель реакции превращения оксида кремния, наносят на поверхность подложки с образованием полисилазановой пленки;
стадию нанесения промотора, в которой раствор для обработки полисилазановой пленки наносят на упомянутую полисилазановую пленку; и
стадию затвердевания, в которой упомянутое полисилазановое соединение превращают в кремнистую пленку при температуре 300°С или меньше;
где
упомянутый раствор для обработки полисилазановой пленки содержит растворитель, от 0,5 до 10% масс. пероксида водорода и от 10 до 98% масс. спирта в расчете на его полную массу.
2. Способ образования кремнистой пленки по п.1, где упомянутое полисилазановое соединение представляет собой пергидрополисилазановое соединение.
3. Способ образования кремнистой пленки по п.1 или 2, где упомянутый ускоритель реакции превращения оксида кремния представляет собой карбоксилат металла, N-гетероциклическое соединение или аминовое соединение.
4. Способ образования кремнистой пленки по п.1 или 2, где упомянутый спирт выбирают из группы, состоящей из моноспиртов, диолов и оксиэфиров, каждый из которых имеет от 1 до 8 атомов углерода.
5. Способ образования кремнистой пленки по п.1 или 2, где упомянутый растворитель представляет собой воду.
6. Способ образования кремнистой пленки по п.1 или 2, где упомянутую стадию затвердевания выполняют при комнатной температуре.
7. Раствор для обработки полисилазановой пленки
который наносят на полисилазановую пленку, образованную путем нанесения композиции, содержащей полисилазановое соединение и ускоритель реакции превращения оксида кремния, чтобы способствовать превращению полисилазанового соединения в оксид кремния;
отличающийся тем, что
содержит растворитель, в количестве от 0,5 до 10% масс. пероксида водорода и от 10 до 98% масс. спирта в расчете на его полную массу.
RU2012112941/28A 2009-09-04 2010-09-02 Способ получения кремнистой пленки и используемая в нем жидкость для обработки полисилазанового покрытия RU2536796C2 (ru)

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JP2009-204952 2009-09-04
JP2009204952A JP5410207B2 (ja) 2009-09-04 2009-09-04 シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液
PCT/JP2010/065035 WO2011027826A1 (ja) 2009-09-04 2010-09-02 シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液

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FR2980394B1 (fr) * 2011-09-26 2013-10-18 Commissariat Energie Atomique Structure multicouche offrant une etancheite aux gaz amelioree
JP5970197B2 (ja) 2012-02-08 2016-08-17 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 無機ポリシラザン樹脂
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WO2015163360A1 (ja) 2014-04-24 2015-10-29 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 共重合ポリシラザン、その製造方法およびそれを含む組成物ならびにそれを用いたシリカ質膜の形成方法
KR101895912B1 (ko) * 2015-09-25 2018-09-07 삼성에스디아이 주식회사 실리카 막의 제조방법, 실리카 막 및 전자소자
JP2017200861A (ja) * 2016-05-02 2017-11-09 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 緻密なシリカ質膜形成用組成物
KR102015404B1 (ko) 2016-12-08 2019-08-28 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막을 포함하는 전자소자
KR20190044249A (ko) * 2017-10-20 2019-04-30 김창균 방오성이 우수한 하드코팅조성물 및 이를 이용한 하드코팅물
KR102490522B1 (ko) 2017-11-14 2023-01-19 삼성전자주식회사 커버 글래스 및 이를 포함하는 전자 장치, 및 커버 글래스 제조 방법
CN108906557B (zh) * 2018-08-03 2021-04-06 广州弘海化工科技有限公司 一种长效超亲水聚硅氮烷涂层及其制备方法
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