TWI492991B - 矽石質膜製造方法及使用於其之聚矽氮烷塗膜處理液 - Google Patents
矽石質膜製造方法及使用於其之聚矽氮烷塗膜處理液 Download PDFInfo
- Publication number
- TWI492991B TWI492991B TW099129647A TW99129647A TWI492991B TW I492991 B TWI492991 B TW I492991B TW 099129647 A TW099129647 A TW 099129647A TW 99129647 A TW99129647 A TW 99129647A TW I492991 B TWI492991 B TW I492991B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- coating
- polyazide
- compound
- vermiculite
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
- C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/62—Nitrogen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Silicon Compounds (AREA)
Description
本發明係關於一種成為電子裝置等之製造的一部份的矽石質膜製造方法及使用其之聚矽氮烷塗膜處理液。更詳言之,本發明係關於一種矽石質膜製造方法,其係在電子裝置等之製造中所形成的作為絕緣膜、平坦化膜、鈍化膜、或保護膜等使用的矽石質膜,使用全氫聚矽氮烷化合物,在低溫形成,以及一種聚矽氮烷塗膜處理液,其可在此種低溫下形成矽石質膜。
一般在半導體裝置般之電子裝置中,半導體元件,例如電晶體、電阻、及其他係配置於基板上,不過該等有必要為電性絕緣。雖然此種半導體元件係在基板上拉離而在二維方向配列,不過在最近,由於對高密度化之要求,則漸傾向三維配列。亦即,在電子裝置之製造過程中,於基板上進行二維地元件配置後,在其上積層絕緣層等,進一步在其上配置元件,製成積層構造則為一般方式。
在用以形成此種絕緣膜之方法,周知是塗布含有聚矽氮烷的塗膜組成物,其後予以燒成,將聚矽氮烷轉化成矽石質膜,並形成矽石質膜之方法。(例如,專利文獻1至3)。
[專利文獻1]日本特開平9-31333號公報
[專利文獻2]日本特開平9-275135公報
[專利文獻3]日本特開2005-45230號公報
[專利文獻4]日本特開平6-299118號公報
[專利文獻5]日本特開平11-116815號公報
[專利文獻6]日本特開2009-111029號公報
但是,根據本發明人等之硏討,在塗布此種含有聚矽氮烷之組成物後,一般有必要進行高溫燒成。但是,高溫處理係造成製造效率降低之原因,加上所積層的層數過多時,也就使得有高溫處理成為必要的製造效率因而降低了。一方面,吾人硏討著為了避免高溫處理,則使用有助於從聚矽氮烷至矽石質膜之轉化反應的促進矽石轉化反應化合物(例如,專利文獻4至6)。但是,吾人已知在使用此種促進矽石轉化反應化合物時,所形成的矽石質膜之表面成為拒水性。結果為了在所形成之矽石質膜表面形成元件,故在塗布所需塗膜組成物時,該塗膜組成物被拒斥(repelled),易產生塗布不勻等之需改良之處。
本發明之矽石質膜製造方法其特徵為在包含:在基板表面上塗布含有聚矽氮烷化合物及促進矽石轉化反應化合物而成的組成物,形成聚矽氮烷塗膜之聚矽氮烷塗膜形成步驟;在該聚矽氮烷塗膜,塗布聚矽氮烷塗膜處理液之促進劑塗布步驟;及在300℃以下使聚矽氮烷化合物轉化成矽石質膜之硬化步驟而成之矽石質膜製造方法中,以聚矽氮烷塗膜處理液之總重量為基準,該聚矽氮烷塗膜處理液含有0.5至10重量%的過氧化氫、10至98重量%的醇及溶劑。
又,本發明之聚矽氮烷塗膜處理液其特徵為藉由塗布含有聚矽氮烷化合物及促進矽石轉化反應化合物而成之組成物而形成之聚矽氮烷塗膜,在該聚矽氮烷塗膜表面塗布聚矽氮烷塗膜處理液,其係用以促進聚矽氮烷化合物轉化成矽石之聚矽氮烷塗膜處理液中,以聚矽氮烷塗膜處理液之總重量為基準,該聚矽氮烷塗膜處理液含有0.5至10重量%的過氧化氫、10至98重量%的醇及溶劑。
根據本發明,相較於先前之矽石質膜製造方法,在低溫下,例如在室溫可容易地形成精密的矽石質膜。尤其是在室溫般之低溫下,由於可形成矽石質膜,故亦可適用於具有耐熱性並非充分的半導體元件等之電子裝置之製造等。再者,由於由本發明方法所得的矽石質膜為親水性,故在以先前低溫燒成法等所得來自全氫聚矽氮烷之矽石質膜之表面塗布其他塗膜組成物時,可抑制易於產生的小凹洞(cissing)。因此,由本發明所形成之矽石質膜,可使用於電子裝置等之層間絕緣膜、上面保護膜、保護膜用底塗等。再者,並不限定於電氣裝置,亦可作為金屬、玻璃或塑膠等基材表面之保護膜使用。
茲就本發明之實施之形態詳細說明如下。
聚矽氮烷塗膜處理液
本發明中聚矽氮烷塗膜處理液係在後述之矽石質膜製造過程中,在使聚矽氮烷塗膜硬化之前塗布者。本發明之矽石質膜製造方法中,藉由在聚矽氮烷塗膜之硬化前塗布本發明之聚矽氮烷塗膜處理液,則可較先前之更低溫下獲得矽石質膜。
本發明之聚矽氮烷塗膜處理液,係含有過氧化氫、醇、溶劑而成。就各自之成分說明則如下述。
(a)過氧化氫
過氧化氫係一般所知的氧化劑。本發明中,吾人認為矽石質膜之形成,可透過該過氧化氫與含於聚矽氮烷塗膜的促進矽石轉化反應化合物而達成。
過氧化氫在單體因係不穩定的液體,故一般作為水溶液處理。因此,在本發明中,於聚矽氮烷塗膜處理液之調製,一般係使用過氧化氫水溶液。較宜為在聚矽氮烷塗膜處理液中以水溶液調配,以成為所期望之過氧化氫濃度。例如可將藉由硫酸氫銨水溶液之電解,或過氧酸(peroxo acid)之水解等所得過氧化氫直接在聚矽氮烷塗膜處理液中調配,不過以使用水溶液者尚稱簡便。
在聚矽氮烷塗膜處理液中,過氧化氫之含量,由可獲得均一燒成膜的觀點觀之,以含量多者較適當,另一方面,吾人若關切處理聚矽氮烷塗膜處理液的作業人員之安全性,則較佳是為一定以下的含量。由此種觀點觀之,對組成物全體之過氧化氫之含量以0.5至10重量%為必要,較宜為1至8重量%、更宜為3至5重量%。
(b)醇
本發明之聚矽氮烷塗膜處理液,必須是含醇者。本發明中醇有使所形成之矽石質膜表面成為親水性之作用。因此,由本發明之方法所形成之矽石質膜,相較於以先前之方法所形成之矽石質膜,則親水性高、拒水性低,藉由在矽石質膜表面塗布其它組成物之情形,則可獲得均一的塗膜。
本發明中,醇係指烴所含氫之至少一個被羥基取代之物。但是,本發明中適當的醇,由處理性及提高矽石質膜表面之親水性之觀點觀之,較佳為選自由碳數1至8之單醇、二醇、及氧醚所構成群組。在醇中,因烴鏈之種類或羥基之位置等而有非常多種類。但是,較理想是所形成的矽石質膜表面之親水性提高效果極大;為防止對所形成矽石質膜之殘留則為低沸點;及與過氧化氫等其它成分之反應性低者。由此種觀點觀之,較佳為選自由甲醇、乙醇、正丙醇、異丙醇、丁醇、己醇、辛醇等之脂肪族醇、乙二醇、丙二醇等之脂肪族二醇、及1-甲氧基-2-丙醇、2-乙氧基乙醇等之氧醚,以及該等之混合物所構成群組。
本發明之聚矽氮烷塗膜處理液中,醇之含量由提高矽石質膜之親水性之觀點觀之,以多者較適當。一方面,在本發明中過氧化氫因一般係調配作為水溶液,由於含於該等之水,而使醇之含量有其上限。由此種觀點觀之,醇之含量必須為10至98重量%、較佳為20至98重量%、更佳為25至98重量%。
(c)溶劑
本發明之聚矽氮烷塗膜處理液係含有溶劑。該溶劑係使前述過氧化氫及醇均一地溶解。此外,作為該防氣泡附著劑使用的醇為液體,一般亦可作為溶劑作用而得,不過,本發明中係規定醇不含於溶劑。亦即,本發明中「溶劑」係選自該醇以外之物。
溶劑,只要是可使前述各成分可均一地溶解而得者,則可任意地選擇,較佳為使用水。為了防止對基板之雜質附著,則較佳為使用純度高者,例如以使用蒸餾水或脫離子水為佳。此外,例如在調配過氧化氫或界面活性劑作為水溶液之情形之溶劑(亦即水)在本發明中亦為聚矽氮烷塗膜處理液之溶劑。
(d)其他成分
本發明之聚矽氮烷塗膜處理液,除了上述之必須成分之外,可依照需要含有其它成分。例如亦可含有為了改良塗布性或氣泡附著性之界面活性劑,用以改良組成物之互溶性之醚、酮、醛、羧酸等。
本發明之聚矽氮烷塗膜處理液,係混合上述各成分,予以均一地溶解來調製。此時,混合之順序並無特別限定。又,調製後之聚矽氮烷塗膜處理液,由於含有穩定性較差的過氧化氫,故在保存時則需保存於冷暗處所。
矽石質膜之製造法
本發明之矽石質膜之製造法係包含下列步驟:(a)在基板表面上塗布含有聚矽氮烷化合物及促進矽石轉化反應化合物(以下,為了簡單起見則稱為促進化合物)而成之組成物、(b)在該聚矽氮烷塗膜塗布聚矽氮烷塗膜處理液(以下,為簡單起見,則稱為處理液),進一步,(c)在300℃以下使聚矽氮烷化合物轉化成矽石質膜而成。
(a)聚矽氮烷塗膜形成步驟
所使用基板之表面材質並無特別限定,可例舉例如外露矽(bare silicon),可依照需要使熱氧化膜或氮化矽膜成膜的矽晶圓等。本發明中,對此種基板,亦可設置溝或孔,或者形成有半導體元件。該等溝或孔、或者半導體元件之形成方法並無特別限定,可使用先前所知的任意方法。
接著,在該基板上塗布成為矽石質膜之材料的聚矽氮烷組成物,以形成塗膜。該聚矽氮烷組成物,可使用將聚矽氮烷化合物及促進矽石轉化反應化合物溶解於溶劑之物。
本發明所使用之聚矽氮烷化合物並無特別限定,只要不損及本發明之效果就可任意選擇。該等可為無機化合物或者有機化合物之任一種。該等聚矽氮烷中,無機聚矽氮烷方面,例如包含具有一般式(I):
所示之構造單位的直鏈狀構造,具有690至2000之分子量,在一分子中具有3至10個SiH3
基,化學分析之元素比率為Si:59至61、N:31至34及H:6.5至7.5之各重量%的全氫聚矽氮烷,及換算聚苯乙烯平均分子量在3,000至20,000之範圍內之全氫聚矽氮烷。
又,其它聚矽氮烷之例,有例如主要為具有由一般式(II):
(式中,R1
、R2
及R3
係各自獨立表示氫原子、烷基、鏈烯基、環烷基、芳基、或者該等之基以外,與氟烷基等之矽直接關連的基為碳之基、烷矽烷基、烷胺基或烷氧基;其中,R1
、R2
及R3
之至少1個為氫原子)所示構造單位所構成之骨架,數量平均分子量為約100至50,000之聚矽氮烷或其改性物。該等聚矽氮烷化合物亦可組合2種以上。
本發明中聚矽氮烷組成物中之聚矽氮烷化合物之含有率,以組成物之總重量為基準,較佳為0.1至40重量%、更宜為0.5至20重量%。通常藉由使聚矽氮烷化合物之含量為0.5至20重量%,則一般可獲得適當膜厚,例如500至8000。
本發明所使用之聚矽氮烷組成物係含有溶解前述聚矽氮烷化合物而得的溶劑。在此所使用之溶劑,並無必要與前述聚矽氮烷塗膜處理液所使用之溶劑相同。例如此種溶劑,只要是可溶解前述各成分而得,則並無特別限定,適當溶劑之具體例方面,可例舉其次之物:(a)芳香族化合物,例如苯、甲苯、二甲苯、乙苯、二乙苯、三甲苯、三乙苯等;(b)飽和烴化合物,例如正戊烷、異戊烷、正己烷、異己烷、正庚烷、異庚烷、正辛烷、異辛烷、正壬烷、異壬烷、正癸烷、異癸烷等;(c)脂環式烴化合物,例如乙基環己烷、甲基環己烷、環己烷、環己烯、對薄荷烷、十氫萘、二戊烯、檸檬烯等;(d)醚類,例如二丙醚、二丁醚、二***、甲基三級丁醚(以下稱為MTBE)、苯甲醚等;及(e)酮類,例如甲基異丁酮(以下稱為MIBK)等。該等中,更適當為(b)飽和烴化合物、(c)脂環式烴化合物(d)醚類、及(e)酮類。
該等溶劑,係為了調整溶劑之蒸發速度,並為了減低對人體之有害性,或為了調製各成分之溶解性,可適宜混合2種以上之物。
本發明中聚矽氮烷組成物,進一步係含有促進矽石轉化反應化合物而成。在此,促進化合物係指,藉由與聚矽氮烷化合物之相互反應而可促進聚矽氮烷轉化成矽石質物質之反應的化合物。此種促進化合物方面,雖各種之物為周知,不過可使用例如專利文獻4至6之物。更具體言之,可例舉下述之(i)至(iii)之化合物。
(i)促進化合物之第一種,可例舉金屬羧酸鹽。特佳為含有鎳、鈦、鉑、銠、鈷、鐵、釕、鋨、鈀、銥、或鋁的金屬羧酸鹽。在使用此種金屬羧酸鹽作為促進化合物之情形,相對於聚矽氮烷化合物之重量,一般為0.01至20重量%以下、較佳為0.1至10重量%、更佳為0.5至5重量%。金屬羧酸鹽之添加量在超過該範圍時,會進行凝膠化,若過少時,會有無法獲得本發明效果之情形,應予注意。
(ii)第二種促進化合物,可例舉N-雜環狀化合物。較佳為不顯示芳香族性的N-雜環狀化合物,更具體言之,有1,3-二-4-哌啶基丙烷、4,4'-伸丙雙(1-甲基哌啶)、二氮雙環[2.2.2]辛烷、或順-2,6-二甲基哌。在將此種N-雜環狀化合物作為促進化合物使用之情形,相對於聚矽氮烷化合物之重量,一般為0.01至50重量%以下、較佳為0.1至10重量%。N-雜環狀化合物之含量增加時,因矽石轉化促進效果增大,故為適當,由於添加後矽石質膜之密度降低,或聚矽氮烷之穩定性降低,使得組成物之處理性變差,故應予注意。
(iii)第三種促進化合物為胺化合物,尤其是可例舉下述一般式(A)或(B)所示之胺化合物。
(式中,RA
係各自獨立表示氫或C1
至C3
之烴基,在此鍵結於一個氮的二個RA
並不同時為氫,L1
及L2
係各自獨立,為-CH2
-、-NRA1
-(在此,RA1
為氫或C1
至C4
之烴基)、或-O-;p1及p3係各自獨立為0至4之整數;p2為1至4之整數)
(式中,RB
係各自獨立表示氫或C1
至C4
之烴基,q1及q2係各自獨立,為1至4之整數)。
胺化合物之調配量,相對於聚矽氮烷化合物之重量,一般為50重量%以下、較佳為10重量%以下。尤其是,在使用全氫聚矽氮烷化合物,其中烷基並不鍵結於矽之情形,由於電子方式或立體方式可有利地作用,即使胺化合物之添加量相對地變少,亦可獲得本發明之效果。具體言之,一般為1至20%、較佳為3至10%、更佳為4至8%、再佳為4至6%。為了以最大限度獲得改善該反應促進作用或膜之精密度的效果,胺化合物之調配量以一定量以上較佳,一方面,為了維持組成物之互溶性,且為了防止製膜時之膜不勻,則較佳為一定量以下。
本發明所使用之聚矽氮烷組成物,可依照需要含有其它添加劑成分。此種成分,可例舉例如黏度調整劑、交聯促進劑等。又,在使用於半導體裝置時,在以鈉之集氣(gettering)效果等為目的,亦可含有磷化合物,例如參(三甲基矽烷基)磷酸酯等。
此種聚矽氮烷組成物亦可使用例如專利文獻4至6所揭示之物。
在將該聚矽氮烷組成物相對於基板表面之組成物之塗布方法方面,先前周知之方法可例舉例如旋轉塗布法、浸漬法、噴灑法、轉印法等。該等中特佳為旋轉塗布法。
(b)聚矽氮烷塗膜處理液塗布步驟
可依照需要,為了自基板表面所形成的聚矽氮烷塗膜除去(乾燥)過剩之有機溶劑,則在預備加熱(預烘焙)後,塗布該聚矽氮烷塗膜處理液。預備加熱由於並非以硬化聚矽氮烷為目的,故一般係藉由在低溫且短時間加熱來進行。具體言之,係藉由在70至150℃、較佳為100至150℃,加熱1至10分鐘、較佳為加熱3至5分鐘來進行。
處理液之塗布方法並無特別限定,可以任意方法塗布。例如可以噴灑塗膜、旋轉塗膜、流動塗膜(flow coating)、手塗膜、棒塗膜等進行塗布。
(c)硬化步驟
在塗布步驟後,塗膜則供至硬化步驟。在此,本發明之矽石質膜製造方法中,硬化步驟係在300℃以下進行。本發明中,係藉由聚矽氮烷組成物所含的促進化合物、及處理液所含的過氧化氫之效果,在極度低溫下,進行聚矽氮烷化合物至矽石之轉化,亦即進行硬化。因此,先前技術為必要的燒成則無特別必要,即使進行燒成,亦可在例如300℃以下之低溫度進行。尤其是,在常溫下之硬化,由於燒成用的設備或能量並非必要故為適當。結果,製造步驟可簡略化,又,即使在進行燒成之情形,由於可省略升溫及冷卻所需時間及能量,故可改善生產效率。
硬化較佳係在含有水蒸氣、氧、或其混合氣體的氛圍中,亦即在氧化氛圍中進行。本發明中,特佳是在含有氧之氛圍下硬化。在此氧之含有率以體積為基準,較佳為1%以上、更佳為10%以上。在此,在不損及本發明效果之範圍,可在氛圍中使氮或氦等之惰性氣體混在其中。
又,在本發明之方法中,在含有水蒸氣的氛圍下進行硬化之情形,以體積為基準,較佳為0.1%以上、更佳為1%以上。本發明中,特佳為在含有氧與水蒸氣之混合氣體氛圍下進行硬化。
在使用本發明的諸例說明,則如下述。
聚矽氮烷組成物之調製
調製下述三種聚矽氮烷組成物。
(X)對全氫聚矽氮烷,添加四甲基己二胺5重量%之比率,以二丁醚稀釋,製成全氫聚矽氮烷濃度10重量%之組成物。
(Y)對全氫聚矽氮烷,添加4,4'-伸丙雙(1-甲基哌啶)5重量%之比率,以二丁醚稀釋,製成全氫聚矽氮烷濃度為10重量%之組成物。
(Z)對全氫聚矽氮烷,添加丙酸鈀1重量%之比率,製成全氫聚矽氮烷濃度為10重量%之組成物。
聚矽氮烷塗膜處理液之調製
接著,使用30%濃度之過氧化氫水、醇、及水,調製如表1所示之聚矽氮烷塗膜處理液。此外,在比較例4中,並不使用過氧化氫,而在比較例5中,並不使用醇。又在比較例6至8,係使用有機溶劑以替代醇。
矽石質膜之製造
使聚矽氮烷組成物1cc滴下4英吋矽晶圓,藉由旋轉塗布法塗布,並形成聚矽氮烷膜。塗布條件係以500rpm經5秒旋轉後,在1000rpm進行20秒旋轉。
在所得聚矽氮烷膜,將浸透於不織布的聚矽氮烷塗膜處理液透過手塗膜而塗布。塗布時之周圍條件,係在室溫、相對濕度40至55%。
在實施例1至19及比較例1至10中,進一步在周圍條件下保持5分鐘,並使聚矽氮烷膜硬化。又,在實施例20及比較例11中,於聚矽氮烷塗膜處理液之塗布前,使聚矽氮烷膜在80℃燒成30分鐘,又在聚矽氮烷塗膜處理液之塗布後,於80℃燒成30分鐘,使聚矽氮烷膜硬化。
矽石質膜之矽石轉化程度之評價
矽石轉化程度,係以FT-IR測定裝置評價。在轉化之前後,測定IR光譜,並評價組成物被轉化成矽石質物質之程度。由轉化所得矽石質膜之IR光譜,一般可確認基於在1030cm-1
、及450cm-1
附近的Si-O鍵結的吸收,且由於存在於轉化前的基於3350cm-1
及1200cm-1
附近的N-H鍵的吸收,及基於2200cm-1
的Si-H鍵之吸收消失,故藉此可確認已轉化成為矽石質膜。根據此種IR光譜之特徵,依照如下述之基準,評價矽石轉化程度。
A:幾乎無法確認相當於Si-H鍵及Si-N鍵之吸收,並充分轉化成矽石者。
B:雖可確認係對應於Si-O鍵之吸收,不過可確認對應於Si-H鍵之吸收,且對矽石之轉化並非充分。
C:IR光譜與全氫聚矽氮烷大致同等,幾乎無法確認轉化成矽石。
所得結果如表1所示。此外,可確認僅比較例5,在所得之矽石質膜表面中有水滴狀之斑點。
矽石質膜之對水接觸角之評價
在所得矽石質膜之表面滴下水滴,測定接觸角。所得結果如表1所示。
Et:乙醇
Me:甲醇
Bu:丁醇
Hx:己醇
Oc:辛醇
PG:丙二醇
EG:乙二醇
MPr:1-甲氧基-2-丙醇
EEt:2-乙氧基乙醇
DBE:二丁醚
Xy:二甲苯
D40:Exxsol D40(商品名,Exxon mobil有限公司製)
以碳數9至11之飽和烴為主成分之石油系溶劑
矽石質膜之濕蝕刻率之評價
就實施例3及20、比較例9及11,評價濕蝕刻率。將所得矽石質膜浸漬於0.5%氟化氫水溶液,測定膜厚減少速度。所得結果如表2所示。
Claims (7)
- 一種矽石質膜製造方法,其特徵為在包含:在基板表面上塗布含有聚矽氮烷化合物及促進矽石轉化反應化合物而成的組成物,形成聚矽氮烷塗膜之聚矽氮烷塗膜形成步驟;在該聚矽氮烷塗膜,塗布聚矽氮烷塗膜處理液之促進劑塗布步驟;及在300℃以下使聚矽氮烷化合物轉化成矽石質膜之硬化步驟而成之矽石質膜製造方法中,以聚矽氮烷塗膜處理液之總重量為基準,該聚矽氮烷塗膜處理液含有0.5至10重量%過氧化氫、10至98重量%醇、及溶劑。
- 如申請專利範圍第1項之矽石質膜製造方法,其中該聚矽氮烷化合物為全氫聚矽氮烷化合物。
- 如申請專利範圍第1或2項之矽石質膜製造方法,其中該促進矽石轉化反應化合物為金屬羧酸、N-雜環狀化合物或胺化合物。
- 如申請專利範圍第1或2項之矽石質膜製造方法,其中該醇係選自由碳數1至8之單醇、二醇、及氧醚(oxyether)所構成群組。
- 如申請專利範圍第1或2項之矽石質膜製造方法,其中該溶劑為水。
- 如申請專利範圍第1或2項之矽石質膜製造方法,其中硬化步驟係在常溫下進行。
- 一種聚矽氮烷塗膜處理液,其特徵為其係藉由塗布含有聚矽氮烷化合物及促進矽石轉化反應化合物而成之組成物而形成之聚矽氮烷塗膜,並在該聚矽氮烷塗膜表面塗布之聚矽氮烷塗膜處理液,且其係在300℃以下用以促進聚矽氮烷化合物轉化成矽石之聚矽氮烷塗膜處理液,以聚矽氮烷塗膜處理液之總重量為基準,該聚矽氮烷塗膜處理液含有0.5至10重量%過氧化氫、10至98重量%醇及溶劑。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009204952A JP5410207B2 (ja) | 2009-09-04 | 2009-09-04 | シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201109387A TW201109387A (en) | 2011-03-16 |
TWI492991B true TWI492991B (zh) | 2015-07-21 |
Family
ID=43649360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099129647A TWI492991B (zh) | 2009-09-04 | 2010-09-02 | 矽石質膜製造方法及使用於其之聚矽氮烷塗膜處理液 |
Country Status (11)
Country | Link |
---|---|
US (1) | US9896764B2 (zh) |
EP (1) | EP2475001A4 (zh) |
JP (1) | JP5410207B2 (zh) |
KR (1) | KR101678843B1 (zh) |
CN (1) | CN102484068B (zh) |
BR (1) | BR112012004962A2 (zh) |
MY (1) | MY158750A (zh) |
RU (1) | RU2536796C2 (zh) |
SG (1) | SG178328A1 (zh) |
TW (1) | TWI492991B (zh) |
WO (1) | WO2011027826A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5405031B2 (ja) * | 2008-03-06 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜の製造に用いる浸漬用溶液およびそれを用いたシリカ質膜の製造法 |
FR2980394B1 (fr) * | 2011-09-26 | 2013-10-18 | Commissariat Energie Atomique | Structure multicouche offrant une etancheite aux gaz amelioree |
JP5970197B2 (ja) | 2012-02-08 | 2016-08-17 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | 無機ポリシラザン樹脂 |
US8809445B2 (en) | 2012-06-22 | 2014-08-19 | Texas Research International, Inc. | Room temperature cured vinyl silazane compositions |
JP6104785B2 (ja) | 2013-12-09 | 2017-03-29 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法 |
EP3135711B1 (en) | 2014-04-24 | 2021-07-07 | Merck Patent GmbH | Copolymerized polysilazane, manufacturing method therefor, composition comprising same, and method for forming siliceous film using same |
KR101895912B1 (ko) * | 2015-09-25 | 2018-09-07 | 삼성에스디아이 주식회사 | 실리카 막의 제조방법, 실리카 막 및 전자소자 |
JP2017200861A (ja) * | 2016-05-02 | 2017-11-09 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 緻密なシリカ質膜形成用組成物 |
KR102015404B1 (ko) | 2016-12-08 | 2019-08-28 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막을 포함하는 전자소자 |
KR20190044249A (ko) * | 2017-10-20 | 2019-04-30 | 김창균 | 방오성이 우수한 하드코팅조성물 및 이를 이용한 하드코팅물 |
KR102490522B1 (ko) * | 2017-11-14 | 2023-01-19 | 삼성전자주식회사 | 커버 글래스 및 이를 포함하는 전자 장치, 및 커버 글래스 제조 방법 |
CN108906557B (zh) * | 2018-08-03 | 2021-04-06 | 广州弘海化工科技有限公司 | 一种长效超亲水聚硅氮烷涂层及其制备方法 |
JP6926059B2 (ja) | 2018-12-25 | 2021-08-25 | 信越化学工業株式会社 | 透明塗膜形成用組成物 |
US11724963B2 (en) | 2019-05-01 | 2023-08-15 | Corning Incorporated | Pharmaceutical packages with coatings comprising polysilazane |
KR102380305B1 (ko) * | 2020-09-28 | 2022-03-29 | 주식회사 라온세라믹스 | 금속판에 세라믹 잉크를 프린팅 하는 방법 및 이 방법을 이용하여 세라믹 잉크가 프린팅된 금속판 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1694936A (zh) * | 2002-11-01 | 2005-11-09 | 克拉里安特国际有限公司 | 包含聚硅氮烷的涂覆溶液 |
JP2007096046A (ja) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、アクティブマトリクス装置および電子機器 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4451969A (en) | 1983-01-10 | 1984-06-05 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
EP0530972B1 (en) * | 1991-08-02 | 1997-11-05 | Canon Kabushiki Kaisha | Liquid crystal image display unit |
JPH05303116A (ja) * | 1992-02-28 | 1993-11-16 | Canon Inc | 半導体装置 |
US5405655A (en) * | 1992-11-19 | 1995-04-11 | Sri International | Temperature-resistant and/or nonwetting coatings of cured, silicon-containing polymers |
JP3385060B2 (ja) | 1993-04-20 | 2003-03-10 | 東燃ゼネラル石油株式会社 | 珪素−窒素−酸素−(炭素)−金属系セラミックス被覆膜の形成方法 |
JP4070828B2 (ja) | 1995-07-13 | 2008-04-02 | Azエレクトロニックマテリアルズ株式会社 | シリカ質セラミックス形成用組成物、同セラミックスの形成方法及び同セラミックス膜 |
US5922411A (en) * | 1995-07-13 | 1999-07-13 | Tonen Corporation | Composition for forming ceramic material and process for producing ceramic material |
JP2904110B2 (ja) | 1996-04-02 | 1999-06-14 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH1098036A (ja) * | 1996-09-20 | 1998-04-14 | Tonen Corp | シリカ質パターンの形成方法 |
JP3904691B2 (ja) | 1997-10-17 | 2007-04-11 | Azエレクトロニックマテリアルズ株式会社 | ポリシラザン含有組成物及びシリカ質膜の形成方法 |
JP2000012536A (ja) * | 1998-06-24 | 2000-01-14 | Tokyo Ohka Kogyo Co Ltd | シリカ被膜形成方法 |
US6037275A (en) * | 1998-08-27 | 2000-03-14 | Alliedsignal Inc. | Nanoporous silica via combined stream deposition |
US6318124B1 (en) | 1999-08-23 | 2001-11-20 | Alliedsignal Inc. | Nanoporous silica treated with siloxane polymers for ULSI applications |
JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
JP4128394B2 (ja) * | 2002-05-16 | 2008-07-30 | クラリアント インターナショナル リミテッド | ポリシラザン含有コーティング膜の親水性促進剤及び親水性維持剤 |
SI1570014T1 (sl) * | 2002-11-01 | 2013-06-28 | Az Electronic Materials Usa Corp., | Premazna raztopina, ki vsebuje polisilazan |
JP2004347778A (ja) * | 2003-05-21 | 2004-12-09 | Konica Minolta Holdings Inc | 光学フィルム、偏光板およびそれを用いた液晶表示装置 |
KR100499171B1 (ko) | 2003-07-21 | 2005-07-01 | 삼성전자주식회사 | 스핀온글래스에 의한 산화실리콘막의 형성방법 |
US7192891B2 (en) * | 2003-08-01 | 2007-03-20 | Samsung Electronics, Co., Ltd. | Method for forming a silicon oxide layer using spin-on glass |
JP2008062114A (ja) * | 2004-12-13 | 2008-03-21 | Hiromasa Murase | メチルシラザン系重合体乃至オリゴマーを原料とした塗膜、及び塗膜の製造方法 |
JP4578993B2 (ja) * | 2005-02-02 | 2010-11-10 | Azエレクトロニックマテリアルズ株式会社 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
JP5077237B2 (ja) * | 2006-09-25 | 2012-11-21 | 日立化成工業株式会社 | 感放射線性組成物、シリカ系被膜の形成方法、シリカ系被膜、シリカ系被膜を備える装置及び部材、並びに絶縁膜用感光剤 |
JP5160189B2 (ja) | 2007-10-26 | 2013-03-13 | AzエレクトロニックマテリアルズIp株式会社 | 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物 |
JP5405031B2 (ja) * | 2008-03-06 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜の製造に用いる浸漬用溶液およびそれを用いたシリカ質膜の製造法 |
-
2009
- 2009-09-04 JP JP2009204952A patent/JP5410207B2/ja not_active Expired - Fee Related
-
2010
- 2010-09-02 KR KR1020127008459A patent/KR101678843B1/ko active IP Right Grant
- 2010-09-02 MY MYPI2012000630A patent/MY158750A/en unknown
- 2010-09-02 BR BR112012004962A patent/BR112012004962A2/pt not_active IP Right Cessation
- 2010-09-02 WO PCT/JP2010/065035 patent/WO2011027826A1/ja active Application Filing
- 2010-09-02 EP EP10813774.6A patent/EP2475001A4/en not_active Withdrawn
- 2010-09-02 US US13/391,923 patent/US9896764B2/en not_active Expired - Fee Related
- 2010-09-02 TW TW099129647A patent/TWI492991B/zh not_active IP Right Cessation
- 2010-09-02 CN CN201080039326.5A patent/CN102484068B/zh not_active Expired - Fee Related
- 2010-09-02 SG SG2012008892A patent/SG178328A1/en unknown
- 2010-09-02 RU RU2012112941/28A patent/RU2536796C2/ru not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1694936A (zh) * | 2002-11-01 | 2005-11-09 | 克拉里安特国际有限公司 | 包含聚硅氮烷的涂覆溶液 |
JP2007096046A (ja) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、アクティブマトリクス装置および電子機器 |
Also Published As
Publication number | Publication date |
---|---|
TW201109387A (en) | 2011-03-16 |
SG178328A1 (en) | 2012-03-29 |
CN102484068A (zh) | 2012-05-30 |
KR101678843B1 (ko) | 2016-11-23 |
US9896764B2 (en) | 2018-02-20 |
JP2011054898A (ja) | 2011-03-17 |
EP2475001A4 (en) | 2018-01-10 |
RU2536796C2 (ru) | 2014-12-27 |
RU2012112941A (ru) | 2013-10-27 |
EP2475001A1 (en) | 2012-07-11 |
WO2011027826A1 (ja) | 2011-03-10 |
BR112012004962A2 (pt) | 2018-03-20 |
JP5410207B2 (ja) | 2014-02-05 |
MY158750A (en) | 2016-11-15 |
CN102484068B (zh) | 2015-05-13 |
KR20120056289A (ko) | 2012-06-01 |
US20120156893A1 (en) | 2012-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI492991B (zh) | 矽石質膜製造方法及使用於其之聚矽氮烷塗膜處理液 | |
KR101623764B1 (ko) | 실리카질 막의 제조에 사용하는 침지용 용액 및 이를 사용한 실리카질 막의 제조법 | |
TWI419922B (zh) | 可得到緻密矽石質膜之聚矽氮烷含有組成物 | |
US6797607B2 (en) | Contact planarization using nanoporous silica materials | |
EP1142832B1 (en) | Ionic additives for extreme low dielectric constant chemical formulations | |
TWI412562B (zh) | Precursor composition of porous film and method of preparation thereof, porous film and method for producing the same, and semiconductor device | |
EP2677535B1 (en) | Method for forming insulating film | |
US20130316515A1 (en) | Method for producing silicon dioxide film | |
EP2144279A2 (en) | Aminosilanes for shallow trench isolation films | |
EP2637203B1 (en) | Method for forming isolation structure | |
TWI698493B (zh) | 緻密二氧化矽質膜形成用組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |