PL117438B1 - Method for masking and passivating of semiconductor elementnta - Google Patents
Method for masking and passivating of semiconductor elementnta Download PDFInfo
- Publication number
- PL117438B1 PL117438B1 PL1978204819A PL20481978A PL117438B1 PL 117438 B1 PL117438 B1 PL 117438B1 PL 1978204819 A PL1978204819 A PL 1978204819A PL 20481978 A PL20481978 A PL 20481978A PL 117438 B1 PL117438 B1 PL 117438B1
- Authority
- PL
- Poland
- Prior art keywords
- layer
- passivating
- substance
- fragments
- passivating substance
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 230000000873 masking effect Effects 0.000 title claims description 8
- 239000000126 substance Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 36
- 239000012634 fragment Substances 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 239000000725 suspension Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- YGBGWFLNLDFCQL-UHFFFAOYSA-N boron zinc Chemical compound [B].[Zn] YGBGWFLNLDFCQL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77168277A | 1977-02-24 | 1977-02-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
PL204819A1 PL204819A1 (pl) | 1978-11-06 |
PL117438B1 true PL117438B1 (en) | 1981-08-31 |
Family
ID=25092629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL1978204819A PL117438B1 (en) | 1977-02-24 | 1978-02-22 | Method for masking and passivating of semiconductor elementnta |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS53105983A (it) |
DE (1) | DE2806567A1 (it) |
GB (1) | GB1552758A (it) |
IT (1) | IT7819031A0 (it) |
PL (1) | PL117438B1 (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524707B1 (fr) * | 1982-04-01 | 1985-05-31 | Cit Alcatel | Procede d'encapsulation de composants semi-conducteurs, et composants encapsules obtenus |
-
1978
- 1978-01-04 IT IT7819031A patent/IT7819031A0/it unknown
- 1978-02-16 GB GB6177/78A patent/GB1552758A/en not_active Expired
- 1978-02-16 DE DE19782806567 patent/DE2806567A1/de not_active Withdrawn
- 1978-02-20 JP JP1901978A patent/JPS53105983A/ja active Pending
- 1978-02-22 PL PL1978204819A patent/PL117438B1/pl unknown
Also Published As
Publication number | Publication date |
---|---|
JPS53105983A (en) | 1978-09-14 |
PL204819A1 (pl) | 1978-11-06 |
GB1552758A (en) | 1979-09-19 |
DE2806567A1 (de) | 1978-08-31 |
IT7819031A0 (it) | 1978-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4133690A (en) | Glass composition for passivating semiconductor surfaces | |
US3476577A (en) | Antifoulant composition and method | |
US3901736A (en) | Method of making deep diode devices | |
US5401690A (en) | Method for making circular diode chips through glass passivation | |
DE3537584A1 (de) | Verfahren zur verhinderung einer korrosion nach durchfuehrung einer aluminium-aetzung | |
US3632434A (en) | Process for glass passivating silicon semiconductor junctions | |
PL117438B1 (en) | Method for masking and passivating of semiconductor elementnta | |
US3255005A (en) | Masking process for semiconductor elements | |
CH631291A5 (de) | Verfahren zur stabilisierenden oberflaechenbehandlung von halbleiterkoerpern. | |
US4159215A (en) | Droplet migration doping using reactive carriers and dopants | |
US3355291A (en) | Application of glass to semiconductor devices | |
DE2037524A1 (de) | Verfahren zur Herstellung eines in Glas gekapselten Halbleiterbauelements | |
CA1165847A (en) | Method of manufacturing photo-voltaic devices | |
JPS583984A (ja) | クロム・エッチング用の酸性の水性エッチャント組成物 | |
US3444015A (en) | Method of etching tantalum | |
JPS54113253A (en) | Bonding method of semiconductor pellet | |
JPS61179541A (ja) | リフトオフ法によるパタ−ン形成法 | |
JPS6320377B2 (it) | ||
JPS59150427A (ja) | 半導体装置およびその製造方法 | |
JPS618941A (ja) | 半導体装置の製造方法 | |
JPS54107423A (en) | Selenium material, its manufacture, and photosensor thereof for electronic photograph | |
JPS604236A (ja) | 半導体装置の製造方法 | |
SU1506481A1 (ru) | Способ изготовлени элемента пам ти дл ППЗУ | |
Miles et al. | An Electrochemical Method for Stripping Tin From Semiconductor Packages | |
JPS5914642A (ja) | 半導体における選択的ガラスパツシベ−シヨン方法 |