NO20110671A1 - Fremgangsmate og system for fremstilling av silisium og silisiumkarbid - Google Patents

Fremgangsmate og system for fremstilling av silisium og silisiumkarbid Download PDF

Info

Publication number: NO20110671A1
Authority: NO; Norway
Prior art keywords: crucible; heating; silicon carbide; silicon; silica
Prior art date: 2010-04-06

Application number

NO20110671A

Other languages

English (en)

Norwegian (no)

Inventor

Takashi Tomita

Original Assignee

Takashi Tomita

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2010-04-06

Filing date

2011-04-05

Publication date

2011-10-07

2011-04-05 Application filed by Takashi Tomita filed Critical Takashi Tomita

2011-10-07 Publication of NO20110671A1 publication Critical patent/NO20110671A1/no

Links

HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 179
229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 168
229910052710 silicon Inorganic materials 0.000 title claims abstract description 150
239000010703 silicon Substances 0.000 title claims abstract description 150
238000000034 method Methods 0.000 title claims abstract description 65
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 426
239000000377 silicon dioxide Substances 0.000 claims abstract description 172
238000010438 heat treatment Methods 0.000 claims abstract description 163
239000000463 material Substances 0.000 claims abstract description 49
238000004519 manufacturing process Methods 0.000 claims abstract description 48
238000006243 chemical reaction Methods 0.000 claims abstract description 43
238000002156 mixing Methods 0.000 claims abstract description 14
238000000227 grinding Methods 0.000 claims abstract description 10
238000005406 washing Methods 0.000 claims abstract description 8
238000000927 vapour-phase epitaxy Methods 0.000 claims abstract description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 147
238000000605 extraction Methods 0.000 claims description 75
239000004576 sand Substances 0.000 claims description 66
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 56
239000012535 impurity Substances 0.000 claims description 37
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 35
229910052799 carbon Inorganic materials 0.000 claims description 33
239000004065 semiconductor Substances 0.000 claims description 32
239000011521 glass Substances 0.000 claims description 31
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 30
229910002091 carbon monoxide Inorganic materials 0.000 claims description 27
230000006698 induction Effects 0.000 claims description 21
239000007789 gas Substances 0.000 claims description 18
230000006837 decompression Effects 0.000 claims description 17
230000001590 oxidative effect Effects 0.000 claims description 15
239000007788 liquid Substances 0.000 claims description 13
238000011084 recovery Methods 0.000 claims description 13
239000012298 atmosphere Substances 0.000 claims description 8
238000000407 epitaxy Methods 0.000 claims description 7
239000000284 extract Substances 0.000 claims description 6
238000001816 cooling Methods 0.000 claims description 5
239000011261 inert gas Substances 0.000 claims description 5
239000000571 coke Substances 0.000 description 21
238000010586 diagram Methods 0.000 description 15
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
239000000758 substrate Substances 0.000 description 7
VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 6
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
239000011435 rock Substances 0.000 description 6
239000013067 intermediate product Substances 0.000 description 5
229910052742 iron Inorganic materials 0.000 description 5
239000012071 phase Substances 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
239000002253 acid Substances 0.000 description 4
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
238000004140 cleaning Methods 0.000 description 4
238000009826 distribution Methods 0.000 description 4
239000000203 mixture Substances 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
229910052698 phosphorus Inorganic materials 0.000 description 4
239000011574 phosphorus Substances 0.000 description 4
235000012239 silicon dioxide Nutrition 0.000 description 4
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
239000007864 aqueous solution Substances 0.000 description 3
229910052796 boron Inorganic materials 0.000 description 3
229910000019 calcium carbonate Inorganic materials 0.000 description 3
239000000378 calcium silicate Substances 0.000 description 3
229910052918 calcium silicate Inorganic materials 0.000 description 3
OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
229910052759 nickel Inorganic materials 0.000 description 3
238000007711 solidification Methods 0.000 description 3
230000008023 solidification Effects 0.000 description 3
239000002904 solvent Substances 0.000 description 3
VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
239000003575 carbonaceous material Substances 0.000 description 2
239000007795 chemical reaction product Substances 0.000 description 2
239000003795 chemical substances by application Substances 0.000 description 2
238000001704 evaporation Methods 0.000 description 2
239000010419 fine particle Substances 0.000 description 2
239000010439 graphite Substances 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
239000000047 product Substances 0.000 description 2
229910000077 silane Inorganic materials 0.000 description 2
239000005049 silicon tetrachloride Substances 0.000 description 2
239000007787 solid Substances 0.000 description 2
PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 2
239000002699 waste material Substances 0.000 description 2
KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000002585 base Substances 0.000 description 1
239000011575 calcium Substances 0.000 description 1
229910052791 calcium Inorganic materials 0.000 description 1
239000012159 carrier gas Substances 0.000 description 1
238000005266 casting Methods 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
239000000460 chlorine Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
238000002485 combustion reaction Methods 0.000 description 1
238000010924 continuous production Methods 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
238000004090 dissolution Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
238000010891 electric arc Methods 0.000 description 1
230000005672 electromagnetic field Effects 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000011049 filling Methods 0.000 description 1
230000008014 freezing Effects 0.000 description 1
238000007710 freezing Methods 0.000 description 1
238000004898 kneading Methods 0.000 description 1
239000000395 magnesium oxide Substances 0.000 description 1
CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
MECMQNITHCOSAF-UHFFFAOYSA-N manganese titanium Chemical compound [Ti].[Mn] MECMQNITHCOSAF-UHFFFAOYSA-N 0.000 description 1
238000010297 mechanical methods and process Methods 0.000 description 1
238000010310 metallurgical process Methods 0.000 description 1
238000005065 mining Methods 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
239000002245 particle Substances 0.000 description 1
239000010453 quartz Substances 0.000 description 1
239000000376 reactant Substances 0.000 description 1
230000035484 reaction time Effects 0.000 description 1
238000011946 reduction process Methods 0.000 description 1
238000010079 rubber tapping Methods 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
239000004575 stone Substances 0.000 description 1
238000000859 sublimation Methods 0.000 description 1
230000008022 sublimation Effects 0.000 description 1
239000010936 titanium Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
238000013022 venting Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/97—Preparation from SiO or SiO2
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
- C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Crystallography & Structural Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Silicon Compounds (AREA)
Carbon And Carbon Compounds (AREA)
Micro-Organisms Or Cultivation Processes Thereof (AREA)

NO20110671A 2010-04-06 2011-04-05 Fremgangsmate og system for fremstilling av silisium og silisiumkarbid NO20110671A1 (no)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2010088015A JP2011219286A (ja)	2010-04-06	2010-04-06	シリコン及び炭化珪素の製造方法及び製造装置

Publications (1)

Publication Number	Publication Date
NO20110671A1 true NO20110671A1 (no)	2011-10-07

Family

ID=44709917

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO20110671A NO20110671A1 (no)	2010-04-06	2011-04-05	Fremgangsmate og system for fremstilling av silisium og silisiumkarbid

Country Status (8)

Country	Link
US (2)	US20110243826A1 (sv)
JP (1)	JP2011219286A (sv)
KR (1)	KR20110112223A (sv)
CN (1)	CN102211771A (sv)
DE (1)	DE102011006888A1 (sv)
NO (1)	NO20110671A1 (sv)
SE (2)	SE1150277A1 (sv)
TW (1)	TW201202139A (sv)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20130220211A1 (en) *	2012-02-29	2013-08-29	Indrajit Dutta	Crystal to crystal oxygen extraction
US20120303290A1 (en) *	2011-05-27	2012-11-29	Applied Filter Technology, Inc.	Realtime silicon detection system and method for the protection of machinery from siloxanes
JP5178939B1 (ja) *	2012-07-11	2013-04-10	和宏永田	マイクロ波によるシリコンの製造方法及びマイクロ波還元炉
JP6304632B2 (ja) *	2014-09-02	2018-04-04	国立大学法人弘前大学	シリカの還元プロセス
KR101641839B1 (ko) *	2015-12-03	2016-07-22	전북대학교산학협력단	고상반응 및 열플라즈마 열분해공정을 이용한 Si/SiC 나노복합분말의 제조방법
TWI698397B (zh)	2019-11-11	2020-07-11	財團法人工業技術研究院	碳化矽粉體的純化方法
CN113666773A (zh) *	2021-08-25	2021-11-19	武汉拓材科技有限公司	一种用于高纯材料制备的坩埚镀碳化硅薄膜方法
CN114074942B (zh) *	2021-11-17	2023-03-07	青岛科技大学	一种利用焦耳热制备单质硅的方法

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US74647A (en) *		1868-02-18		Isaac h
SU1494861A3 (ru) *	1983-11-26	1989-07-15	Интернэшнл Минерал Энд Кемикал Корпорейшн (Фирма)	Способ получени кремни в низкошахтной электропечи
US4981668A (en) *	1986-04-29	1991-01-01	Dow Corning Corporation	Silicon carbide as a raw material for silicon production
CA1321706C (en) *	1986-04-29	1993-08-31	Alvin William Rauchholz	Silicon carbide as raw material for silicon production
US4897852A (en) *	1988-08-31	1990-01-30	Dow Corning Corporation	Silicon smelting process
JP2001039708A (ja) *	1999-05-21	2001-02-13	Kobe Steel Ltd	高純度金属Ｓｉ及び高純度ＳｉＯの製造方法
JP2001199767A (ja) *	2000-01-12	2001-07-24	Nippon Carbon Co Ltd	炭化ケイ素成型体の製造方法
WO2006025420A1 (ja) *	2004-09-03	2006-03-09	Sumitomo Metal Industries, Ltd.	炭化珪素単結晶の製造方法
JP4934958B2 (ja) *	2004-11-24	2012-05-23	住友金属工業株式会社	炭化珪素単結晶の製造方法
JP4686666B2 (ja) *	2004-12-28	2011-05-25	地方独立行政法人北海道立総合研究機構	シリコン製造方法
EP1811064A1 (fr) *	2006-01-12	2007-07-25	Vesuvius Crucible Company	Creuset pour le traitement de silicium à l'état fondu
KR100661284B1 (ko) *	2006-02-14	2006-12-27	한국화학연구원	유동층 반응기를 이용한 다결정실리콘 제조 방법
DE102006056482B4 (de) *	2006-11-30	2010-07-15	Sunicon Ag	Vorrichtung und Verfahren zum Aufbereiten von Nichteisenmetallen
US7572425B2 (en) *	2007-09-14	2009-08-11	General Electric Company	System and method for producing solar grade silicon
JP5131634B2 (ja) *	2007-09-28	2013-01-30	東京電力株式会社	光ファイバー心線のリサイクル方法
CN101181997A (zh) *	2007-11-29	2008-05-21	晶湛（南昌）科技有限公司	一种金属硅材料的制备方法
CN101555011A (zh) *	2008-04-12	2009-10-14	于旭宏	硅石还原法生产硅
KR101318427B1 (ko) *	2008-08-15	2013-10-16	가부시키가이샤 아루박	실리콘의 정제 방법
DE102008041334A1 (de) *	2008-08-19	2010-02-25	Evonik Degussa Gmbh	Herstellung von Silizium durch Umsetzung von Siliziumoxid und Siliziumcarbid gegebenenfalls in Gegenwart einer zweiten Kohlenstoffquelle
TW201033123A (en) *	2009-03-13	2010-09-16	Radiant Technology Co Ltd	Method for manufacturing a silicon material with high purity

2010
- 2010-04-06 JP JP2010088015A patent/JP2011219286A/ja not_active Ceased
2011
- 2011-03-30 SE SE1150277A patent/SE1150277A1/sv not_active Application Discontinuation
- 2011-03-30 SE SE1250593A patent/SE1250593A1/sv not_active Application Discontinuation
- 2011-04-05 US US13/079,996 patent/US20110243826A1/en not_active Abandoned
- 2011-04-05 KR KR1020110031202A patent/KR20110112223A/ko not_active Application Discontinuation
- 2011-04-05 NO NO20110671A patent/NO20110671A1/no not_active Application Discontinuation
- 2011-04-06 CN CN2011100871564A patent/CN102211771A/zh active Pending
- 2011-04-06 TW TW100111793A patent/TW201202139A/zh unknown
- 2011-04-06 DE DE102011006888A patent/DE102011006888A1/de not_active Withdrawn
2012
- 2012-01-17 US US13/351,638 patent/US20120171848A1/en not_active Abandoned

Also Published As

Publication number	Publication date
KR20110112223A (ko)	2011-10-12
TW201202139A (en)	2012-01-16
US20110243826A1 (en)	2011-10-06
CN102211771A (zh)	2011-10-12
US20120171848A1 (en)	2012-07-05
JP2011219286A (ja)	2011-11-04
SE1250593A1 (sv)	2012-06-07
DE102011006888A1 (de)	2011-12-15
SE1150277A1 (sv)	2011-10-07

Legal Events

Date	Code	Title	Description
2014-11-24	FC2A	Withdrawal, rejection or dismissal of laid open patent application

Publication	Publication Date	Title
NO20110671A1 (no)	2011-10-07	Fremgangsmate og system for fremstilling av silisium og silisiumkarbid
US8329133B2 (en)	2012-12-11	Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
JP5564418B2 (ja)	2014-07-30	ポリクリスタルシリコンまたはマルチクリスタルシリコンの製造装置および方法、それらによって製造されるポリクリスタルシリコンまたはマルチクリスタルシリコンのインゴットおよびウエハ、ならびにそれらの太陽電池製造のための使用
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