NL7201055A - - Google Patents
Info
- Publication number
- NL7201055A NL7201055A NL7201055A NL7201055A NL7201055A NL 7201055 A NL7201055 A NL 7201055A NL 7201055 A NL7201055 A NL 7201055A NL 7201055 A NL7201055 A NL 7201055A NL 7201055 A NL7201055 A NL 7201055A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/03—Diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11195671A | 1971-02-02 | 1971-02-02 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7201055A true NL7201055A (de) | 1972-08-04 |
NL180467B NL180467B (nl) | 1986-09-16 |
NL180467C NL180467C (nl) | 1987-02-16 |
Family
ID=22341356
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7201055,A NL180467C (nl) | 1971-02-02 | 1972-01-26 | Halfgeleiderinrichting, omvattende een op een halfgeleidersubstraat aangegroeide epitaxiale laag van halfgeleidermateriaal, die in afzonderlijke eilandzones is verdeeld door een door plaatselijke oxydatie van halfgeleidermateriaal van de laag in de laag gevormd patroon van isolerend materiaal. |
NL8600620A NL8600620A (nl) | 1971-02-02 | 1986-03-10 | Geintegreerde keten met geoxydeerde isolatie. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8600620A NL8600620A (nl) | 1971-02-02 | 1986-03-10 | Geintegreerde keten met geoxydeerde isolatie. |
Country Status (15)
Country | Link |
---|---|
US (2) | US3648125A (de) |
JP (1) | JPS5282081A (de) |
AU (1) | AU471388B2 (de) |
BE (1) | BE778810A (de) |
CA (1) | CA1106078A (de) |
CH (1) | CH528152A (de) |
DE (1) | DE2203183A1 (de) |
FR (1) | FR2124295B1 (de) |
GB (1) | GB1330790A (de) |
IL (1) | IL38262A (de) |
IT (1) | IT948918B (de) |
NL (2) | NL180467C (de) |
SE (1) | SE381535B (de) |
SU (1) | SU654198A3 (de) |
YU (1) | YU37043B (de) |
Families Citing this family (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5082793A (en) * | 1965-09-28 | 1992-01-21 | Li Chou H | Method for making solid state device utilizing ion implantation techniques |
US5696402A (en) * | 1965-09-28 | 1997-12-09 | Li; Chou H. | Integrated circuit device |
US4946800A (en) * | 1965-09-28 | 1990-08-07 | Li Chou H | Method for making solid-state device utilizing isolation grooves |
US7038290B1 (en) | 1965-09-28 | 2006-05-02 | Li Chou H | Integrated circuit device |
US6979877B1 (en) | 1965-09-28 | 2005-12-27 | Li Chou H | Solid-state device |
US4916513A (en) * | 1965-09-28 | 1990-04-10 | Li Chou H | Dielectrically isolated integrated circuit structure |
US6849918B1 (en) * | 1965-09-28 | 2005-02-01 | Chou H. Li | Miniaturized dielectrically isolated solid state device |
USRE28653E (en) * | 1968-04-23 | 1975-12-16 | Method of fabricating semiconductor devices | |
NL170902C (nl) * | 1970-07-10 | 1983-01-03 | Philips Nv | Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. |
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
NL170901C (nl) * | 1971-04-03 | 1983-01-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US3909318A (en) * | 1971-04-14 | 1975-09-30 | Philips Corp | Method of forming complementary devices utilizing outdiffusion and selective oxidation |
US6076652A (en) | 1971-04-16 | 2000-06-20 | Texas Instruments Incorporated | Assembly line system and apparatus controlling transfer of a workpiece |
US3751722A (en) * | 1971-04-30 | 1973-08-07 | Standard Microsyst Smc | Mos integrated circuit with substrate containing selectively formed resistivity regions |
US3947299A (en) * | 1971-05-22 | 1976-03-30 | U.S. Philips Corporation | Method of manufacturing semiconductor devices |
NL166156C (nl) * | 1971-05-22 | 1981-06-15 | Philips Nv | Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan. |
NL7107040A (de) * | 1971-05-22 | 1972-11-24 | ||
US4965652A (en) * | 1971-06-07 | 1990-10-23 | International Business Machines Corporation | Dielectric isolation for high density semiconductor devices |
US3921283A (en) * | 1971-06-08 | 1975-11-25 | Philips Corp | Semiconductor device and method of manufacturing the device |
US4016594A (en) * | 1971-06-08 | 1977-04-05 | U.S. Philips Corporation | Semiconductor device and method of manufacturing the device |
US4396933A (en) * | 1971-06-18 | 1983-08-02 | International Business Machines Corporation | Dielectrically isolated semiconductor devices |
US3928091A (en) * | 1971-09-27 | 1975-12-23 | Hitachi Ltd | Method for manufacturing a semiconductor device utilizing selective oxidation |
US3828232A (en) * | 1972-02-28 | 1974-08-06 | Tokyo Shibaura Electric Co | Semiconductor target |
US3818289A (en) * | 1972-04-10 | 1974-06-18 | Raytheon Co | Semiconductor integrated circuit structures |
US3999213A (en) * | 1972-04-14 | 1976-12-21 | U.S. Philips Corporation | Semiconductor device and method of manufacturing the device |
IT979178B (it) * | 1972-05-11 | 1974-09-30 | Ibm | Resistore per dispositivi a circuito integrato |
US3861968A (en) * | 1972-06-19 | 1975-01-21 | Ibm | Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition |
US3961355A (en) * | 1972-06-30 | 1976-06-01 | International Business Machines Corporation | Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming |
US4063271A (en) * | 1972-07-26 | 1977-12-13 | Texas Instruments Incorporated | FET and bipolar device and circuit process with maximum junction control |
SE361232B (de) * | 1972-11-09 | 1973-10-22 | Ericsson Telefon Ab L M | |
US3841918A (en) * | 1972-12-01 | 1974-10-15 | Bell Telephone Labor Inc | Method of integrated circuit fabrication |
DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
NL161301C (nl) * | 1972-12-29 | 1980-01-15 | Philips Nv | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
US3959812A (en) * | 1973-02-26 | 1976-05-25 | Hitachi, Ltd. | High-voltage semiconductor integrated circuit |
US3919005A (en) * | 1973-05-07 | 1975-11-11 | Fairchild Camera Instr Co | Method for fabricating double-diffused, lateral transistor |
US3873989A (en) * | 1973-05-07 | 1975-03-25 | Fairchild Camera Instr Co | Double-diffused, lateral transistor structure |
US3992232A (en) * | 1973-08-06 | 1976-11-16 | Hitachi, Ltd. | Method of manufacturing semiconductor device having oxide isolation structure and guard ring |
GB1457139A (en) * | 1973-09-27 | 1976-12-01 | Hitachi Ltd | Method of manufacturing semiconductor device |
US4136435A (en) * | 1973-10-10 | 1979-01-30 | Li Chou H | Method for making solid-state device |
JPS5214594B2 (de) * | 1973-10-17 | 1977-04-22 | ||
US3886000A (en) * | 1973-11-05 | 1975-05-27 | Ibm | Method for controlling dielectric isolation of a semiconductor device |
US3962779A (en) * | 1974-01-14 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Method for fabricating oxide isolated integrated circuits |
NL180466C (nl) * | 1974-03-15 | 1987-02-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal. |
US3920481A (en) * | 1974-06-03 | 1975-11-18 | Fairchild Camera Instr Co | Process for fabricating insulated gate field effect transistor structure |
US3919060A (en) * | 1974-06-14 | 1975-11-11 | Ibm | Method of fabricating semiconductor device embodying dielectric isolation |
US3945857A (en) * | 1974-07-01 | 1976-03-23 | Fairchild Camera And Instrument Corporation | Method for fabricating double-diffused, lateral transistors |
US3993513A (en) * | 1974-10-29 | 1976-11-23 | Fairchild Camera And Instrument Corporation | Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures |
US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
US3982266A (en) * | 1974-12-09 | 1976-09-21 | Texas Instruments Incorporated | Integrated injection logic having high inverse current gain |
US3988619A (en) * | 1974-12-27 | 1976-10-26 | International Business Machines Corporation | Random access solid-state image sensor with non-destructive read-out |
DE2510593C3 (de) * | 1975-03-11 | 1982-03-18 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Halbleiter-Schaltungsanordnung |
US3954523A (en) * | 1975-04-14 | 1976-05-04 | International Business Machines Corporation | Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation |
US3972754A (en) * | 1975-05-30 | 1976-08-03 | Ibm Corporation | Method for forming dielectric isolation in integrated circuits |
US4056415A (en) * | 1975-08-04 | 1977-11-01 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material |
US4025364A (en) * | 1975-08-11 | 1977-05-24 | Fairchild Camera And Instrument Corporation | Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases |
JPS5922381B2 (ja) * | 1975-12-03 | 1984-05-26 | 株式会社東芝 | ハンドウタイソシノ セイゾウホウホウ |
JPS5275989A (en) | 1975-12-22 | 1977-06-25 | Hitachi Ltd | Production of semiconductor device |
US4079408A (en) * | 1975-12-31 | 1978-03-14 | International Business Machines Corporation | Semiconductor structure with annular collector/subcollector region |
DE2605641C3 (de) * | 1976-02-12 | 1979-12-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
US4137109A (en) * | 1976-04-12 | 1979-01-30 | Texas Instruments Incorporated | Selective diffusion and etching method for isolation of integrated logic circuit |
US4118728A (en) * | 1976-09-03 | 1978-10-03 | Fairchild Camera And Instrument Corporation | Integrated circuit structures utilizing conductive buried regions |
US4149177A (en) * | 1976-09-03 | 1979-04-10 | Fairchild Camera And Instrument Corporation | Method of fabricating conductive buried regions in integrated circuits and the resulting structures |
US4228450A (en) * | 1977-10-25 | 1980-10-14 | International Business Machines Corporation | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
US4140558A (en) * | 1978-03-02 | 1979-02-20 | Bell Telephone Laboratories, Incorporated | Isolation of integrated circuits utilizing selective etching and diffusion |
US4172291A (en) * | 1978-08-07 | 1979-10-23 | Fairchild Camera And Instrument Corp. | Preset circuit for information storage devices |
US4269636A (en) * | 1978-12-29 | 1981-05-26 | Harris Corporation | Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking |
US4466172A (en) * | 1979-01-08 | 1984-08-21 | American Microsystems, Inc. | Method for fabricating MOS device with self-aligned contacts |
US4670769A (en) * | 1979-04-09 | 1987-06-02 | Harris Corporation | Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation |
US4276616A (en) * | 1979-04-23 | 1981-06-30 | Fairchild Camera & Instrument Corp. | Merged bipolar/field-effect bistable memory cell |
US4251300A (en) * | 1979-05-14 | 1981-02-17 | Fairchild Camera And Instrument Corporation | Method for forming shaped buried layers in semiconductor devices utilizing etching, epitaxial deposition and oxide formation |
US4677456A (en) * | 1979-05-25 | 1987-06-30 | Raytheon Company | Semiconductor structure and manufacturing method |
US4289550A (en) * | 1979-05-25 | 1981-09-15 | Raytheon Company | Method of forming closely spaced device regions utilizing selective etching and diffusion |
US4333227A (en) * | 1979-11-29 | 1982-06-08 | International Business Machines Corporation | Process for fabricating a self-aligned micrometer bipolar transistor device |
US4303933A (en) * | 1979-11-29 | 1981-12-01 | International Business Machines Corporation | Self-aligned micrometer bipolar transistor device and process |
US4252582A (en) * | 1980-01-25 | 1981-02-24 | International Business Machines Corporation | Self aligned method for making bipolar transistor having minimum base to emitter contact spacing |
JPS56127971A (en) * | 1980-03-07 | 1981-10-07 | Victor Co Of Japan Ltd | Automatic tape loading device |
US4318751A (en) * | 1980-03-13 | 1982-03-09 | International Business Machines Corporation | Self-aligned process for providing an improved high performance bipolar transistor |
US4274909A (en) * | 1980-03-17 | 1981-06-23 | International Business Machines Corporation | Method for forming ultra fine deep dielectric isolation |
US4339767A (en) * | 1980-05-05 | 1982-07-13 | International Business Machines Corporation | High performance PNP and NPN transistor structure |
US4412283A (en) * | 1980-05-30 | 1983-10-25 | Fairchild Camera & Instrument Corp. | High performance microprocessor system |
US4359816A (en) * | 1980-07-08 | 1982-11-23 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits |
US4758528A (en) * | 1980-07-08 | 1988-07-19 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
US4545113A (en) * | 1980-10-23 | 1985-10-08 | Fairchild Camera & Instrument Corporation | Process for fabricating a lateral transistor having self-aligned base and base contact |
JPS6212508Y2 (de) * | 1980-12-08 | 1987-04-01 | ||
US4398338A (en) * | 1980-12-24 | 1983-08-16 | Fairchild Camera & Instrument Corp. | Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques |
US4373252A (en) * | 1981-02-17 | 1983-02-15 | Fairchild Camera & Instrument | Method for manufacturing a semiconductor structure having reduced lateral spacing between buried regions |
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-
1971
- 1971-02-02 US US111956A patent/US3648125A/en not_active Expired - Lifetime
- 1971-10-02 SU SU711833076A patent/SU654198A3/ru active
- 1971-11-16 CA CA127,816A patent/CA1106078A/en not_active Expired
- 1971-11-19 GB GB5388471A patent/GB1330790A/en not_active Expired
- 1971-11-24 AU AU36123/71A patent/AU471388B2/en not_active Expired
- 1971-11-30 IL IL38262A patent/IL38262A/en unknown
-
1972
- 1972-01-24 IT IT67198/72A patent/IT948918B/it active
- 1972-01-24 DE DE19722203183 patent/DE2203183A1/de not_active Ceased
- 1972-01-26 NL NLAANVRAGE7201055,A patent/NL180467C/xx not_active IP Right Cessation
- 1972-01-26 YU YU0175/72A patent/YU37043B/xx unknown
- 1972-01-28 FR FR7202897A patent/FR2124295B1/fr not_active Expired
- 1972-01-31 SE SE7201056A patent/SE381535B/xx unknown
- 1972-02-01 BE BE778810A patent/BE778810A/xx not_active IP Right Cessation
- 1972-02-01 CH CH148872A patent/CH528152A/de not_active IP Right Cessation
-
1976
- 1976-10-15 JP JP12435876A patent/JPS5282081A/ja active Granted
-
1986
- 1986-03-10 NL NL8600620A patent/NL8600620A/nl not_active Application Discontinuation
-
1989
- 1989-08-18 US US07/396,733 patent/US6093620A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
IL38262A0 (en) | 1972-01-27 |
IT948918B (it) | 1973-06-11 |
US3648125A (en) | 1972-03-07 |
NL8600620A (nl) | 1986-07-01 |
NL180467C (nl) | 1987-02-16 |
NL180467B (nl) | 1986-09-16 |
BE778810A (fr) | 1972-05-30 |
AU471388B2 (en) | 1973-05-31 |
JPS5528219B2 (de) | 1980-07-26 |
YU37043B (en) | 1984-08-31 |
FR2124295B1 (de) | 1979-08-24 |
FR2124295A1 (de) | 1972-09-22 |
CH528152A (de) | 1972-09-15 |
YU17572A (en) | 1981-11-13 |
SU654198A3 (ru) | 1979-03-25 |
DE2203183A1 (de) | 1972-08-10 |
CA1106078A (en) | 1981-07-28 |
GB1330790A (en) | 1973-09-19 |
SE381535B (sv) | 1975-12-08 |
IL38262A (en) | 1976-04-30 |
JPS5282081A (en) | 1977-07-08 |
AU3612371A (en) | 1973-05-31 |
US6093620A (en) | 2000-07-25 |
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Date | Code | Title | Description |
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A85 | Still pending on 85-01-01 | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |