NL286507A - - Google Patents
Info
- Publication number
- NL286507A NL286507A NL286507DA NL286507A NL 286507 A NL286507 A NL 286507A NL 286507D A NL286507D A NL 286507DA NL 286507 A NL286507 A NL 286507A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
- B01J2/30—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic using agents to prevent the granules sticking together; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US158298A US3156591A (en) | 1961-12-11 | 1961-12-11 | Epitaxial growth through a silicon dioxide mask in a vacuum vapor deposition process |
Publications (1)
Publication Number | Publication Date |
---|---|
NL286507A true NL286507A (de) |
Family
ID=22567485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL286507D NL286507A (de) | 1961-12-11 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3156591A (de) |
CH (1) | CH409887A (de) |
DE (1) | DE1444496A1 (de) |
GB (1) | GB988897A (de) |
NL (1) | NL286507A (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3265542A (en) * | 1962-03-15 | 1966-08-09 | Philco Corp | Semiconductor device and method for the fabrication thereof |
US3296040A (en) * | 1962-08-17 | 1967-01-03 | Fairchild Camera Instr Co | Epitaxially growing layers of semiconductor through openings in oxide mask |
US3447977A (en) * | 1962-08-23 | 1969-06-03 | Siemens Ag | Method of producing semiconductor members |
NL294648A (de) * | 1962-08-31 | |||
US3298082A (en) * | 1963-05-14 | 1967-01-17 | Hitachi Ltd | Method of making semiconductors and diffusion thereof |
US3319311A (en) * | 1963-05-24 | 1967-05-16 | Ibm | Semiconductor devices and their fabrication |
DE1290925B (de) * | 1963-06-10 | 1969-03-20 | Philips Nv | Verfahren zum Abscheiden von Silicium auf einem Halbleiterkoerper |
DE1227154B (de) * | 1963-07-23 | 1966-10-20 | Siemens Ag | Verfahren zur Herstellung eines pn-UEbergangs in einer einkristallinen Halbleiteranordnung |
US3326729A (en) * | 1963-08-20 | 1967-06-20 | Hughes Aircraft Co | Epitaxial method for the production of microcircuit components |
US3287186A (en) * | 1963-11-26 | 1966-11-22 | Rca Corp | Semiconductor devices and method of manufacture thereof |
US3493442A (en) * | 1963-11-26 | 1970-02-03 | Int Rectifier Corp | High voltage semiconductor device |
US3283223A (en) * | 1963-12-27 | 1966-11-01 | Ibm | Transistor and method of fabrication to minimize surface recombination effects |
US3409483A (en) * | 1964-05-01 | 1968-11-05 | Texas Instruments Inc | Selective deposition of semiconductor materials |
DE1210955B (de) * | 1964-06-09 | 1966-02-17 | Ibm Deutschland | Verfahren zum Maskieren von Kristallen und zum Herstellen von Halbleiterbauelementen |
US3409482A (en) * | 1964-12-30 | 1968-11-05 | Sprague Electric Co | Method of making a transistor with a very thin diffused base and an epitaxially grown emitter |
GB1124762A (en) * | 1965-01-08 | 1968-08-21 | Lucas Industries Ltd | Semi-conductor devices |
US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
US3511702A (en) * | 1965-08-20 | 1970-05-12 | Motorola Inc | Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen |
US3425879A (en) * | 1965-10-24 | 1969-02-04 | Texas Instruments Inc | Method of making shaped epitaxial deposits |
US3536547A (en) * | 1968-03-25 | 1970-10-27 | Bell Telephone Labor Inc | Plasma deposition of oxide coatings on silicon and electron bombardment of portions thereof to be etched selectively |
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
US4274892A (en) * | 1978-12-14 | 1981-06-23 | Trw Inc. | Dopant diffusion method of making semiconductor products |
US4462847A (en) * | 1982-06-21 | 1984-07-31 | Texas Instruments Incorporated | Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition |
US5284521A (en) * | 1990-09-21 | 1994-02-08 | Anelva Corporation | Vacuum film forming apparatus |
US7547897B2 (en) * | 2006-05-26 | 2009-06-16 | Cree, Inc. | High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL180750B (nl) * | 1952-08-20 | Bristol Myers Co | Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten. | |
US2814589A (en) * | 1955-08-02 | 1957-11-26 | Bell Telephone Labor Inc | Method of plating silicon |
NL251064A (de) * | 1955-11-04 | |||
BE563088A (de) * | 1957-02-25 | |||
US3098774A (en) * | 1960-05-02 | 1963-07-23 | Mark Albert | Process for producing single crystal silicon surface layers |
US3031270A (en) * | 1960-05-04 | 1962-04-24 | Siemens Ag | Method of producing silicon single crystals |
-
0
- NL NL286507D patent/NL286507A/xx unknown
-
1961
- 1961-12-11 US US158298A patent/US3156591A/en not_active Expired - Lifetime
-
1962
- 1962-12-03 GB GB45458/62A patent/GB988897A/en not_active Expired
- 1962-12-10 DE DE19621444496 patent/DE1444496A1/de active Pending
- 1962-12-11 CH CH1452862A patent/CH409887A/de unknown
Also Published As
Publication number | Publication date |
---|---|
DE1444496A1 (de) | 1968-10-31 |
GB988897A (en) | 1965-04-14 |
CH409887A (de) | 1966-03-31 |
US3156591A (en) | 1964-11-10 |