NL194417B - Ge´ntegreerde halfgeleiderschakeling. - Google Patents

Ge´ntegreerde halfgeleiderschakeling.

Info

Publication number
NL194417B
NL194417B NL9400830A NL9400830A NL194417B NL 194417 B NL194417 B NL 194417B NL 9400830 A NL9400830 A NL 9400830A NL 9400830 A NL9400830 A NL 9400830A NL 194417 B NL194417 B NL 194417B
Authority
NL
Netherlands
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Application number
NL9400830A
Other languages
English (en)
Other versions
NL194417C (nl
NL9400830A (nl
Inventor
Gen Tada
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of NL9400830A publication Critical patent/NL9400830A/nl
Publication of NL194417B publication Critical patent/NL194417B/nl
Application granted granted Critical
Publication of NL194417C publication Critical patent/NL194417C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL9400830A 1993-05-20 1994-05-20 Ge´ntegreerde halfgeleiderschakeling. NL194417C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11803893 1993-05-20
JP11803893A JP3163839B2 (ja) 1993-05-20 1993-05-20 半導体集積回路

Publications (3)

Publication Number Publication Date
NL9400830A NL9400830A (nl) 1994-12-16
NL194417B true NL194417B (nl) 2001-11-01
NL194417C NL194417C (nl) 2002-03-04

Family

ID=14726513

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9400830A NL194417C (nl) 1993-05-20 1994-05-20 Ge´ntegreerde halfgeleiderschakeling.

Country Status (3)

Country Link
US (1) US5495122A (nl)
JP (1) JP3163839B2 (nl)
NL (1) NL194417C (nl)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184065B2 (ja) * 1994-07-25 2001-07-09 セイコーインスツルメンツ株式会社 半導体集積回路装置及び電子機器
JP2981717B2 (ja) * 1994-09-02 1999-11-22 セイコーインスツルメンツ株式会社 半導体集積回路装置
JPH1084045A (ja) * 1996-09-06 1998-03-31 Matsushita Electron Corp 半導体集積回路装置およびその製造方法
US5880502A (en) 1996-09-06 1999-03-09 Micron Display Technology, Inc. Low and high voltage CMOS devices and process for fabricating same
JP3542476B2 (ja) * 1997-12-01 2004-07-14 三菱電機株式会社 Ｓｏｉ構造のｃｍｏｓ回路
US6133077A (en) * 1998-01-13 2000-10-17 Lsi Logic Corporation Formation of high-voltage and low-voltage devices on a semiconductor substrate
US6093585A (en) * 1998-05-08 2000-07-25 Lsi Logic Corporation High voltage tolerant thin film transistor
US6075273A (en) * 1998-06-18 2000-06-13 Lucent Technologies Inc. Integrated circuit device in which gate oxide thickness is selected to control plasma damage during device fabrication
JP2000124325A (ja) * 1998-10-16 2000-04-28 Nec Corp 半導体装置およびその製造方法
US6255125B1 (en) * 1999-03-26 2001-07-03 Advanced Micro Devices, Inc. Method and apparatus for compensating for critical dimension variations in the production of a semiconductor wafer
JP2001351989A (ja) * 2000-06-05 2001-12-21 Nec Corp 半導体装置の製造方法
JP2003060199A (ja) 2001-08-10 2003-02-28 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2003324159A (ja) 2002-04-26 2003-11-14 Ricoh Co Ltd 半導体装置
JP4052923B2 (ja) * 2002-10-25 2008-02-27 株式会社ルネサステクノロジ 半導体装置
KR100808376B1 (ko) * 2006-08-30 2008-03-03 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
JP4592666B2 (ja) * 2006-10-11 2010-12-01 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
KR101232935B1 (ko) * 2010-11-23 2013-02-15 주식회사 동부하이텍 Ｌｄｍｏｓ반도체 소자
US10686047B2 (en) * 2018-05-23 2020-06-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4118642A (en) * 1975-06-26 1978-10-03 Motorola, Inc. Higher density insulated gate field effect circuit
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS56138335A (en) * 1981-03-09 1981-10-28 Hitachi Ltd Integrated circuit
IT1191558B (it) * 1986-04-21 1988-03-23 Sgs Microelettronica Spa Dispositivo a semiconduttore integrato di tipo mos con spessore dell'ossido di porta non uniforme e procedimento di fabbricazione dello stesso
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置

Also Published As

Publication number Publication date
US5495122A (en) 1996-02-27
NL194417C (nl) 2002-03-04
JPH06334129A (ja) 1994-12-02
JP3163839B2 (ja) 2001-05-08
NL9400830A (nl) 1994-12-16

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20031201