MX9700586A - Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor. - Google Patents
Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor.Info
- Publication number
- MX9700586A MX9700586A MX9700586A MX9700586A MX9700586A MX 9700586 A MX9700586 A MX 9700586A MX 9700586 A MX9700586 A MX 9700586A MX 9700586 A MX9700586 A MX 9700586A MX 9700586 A MX9700586 A MX 9700586A
- Authority
- MX
- Mexico
- Prior art keywords
- inductively coupled
- plasma
- channel
- coupled plasma
- semiconductor wafer
- Prior art date
Links
- 238000009616 inductively coupled plasma Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
La presente invencion se refiere a un reactor de plasma acoplado inductivamente y a un método para procesar una microplaqueta semiconductora (28). El reactor de plasma acoplado inductivamente (10) incluye una fuente de plasma (16) que tiene una pluralidad de canales (38, 44) en donde los gases de procesamiento se suministran independientemente a cada canal. Un sistema para suministro de gas (20) incluye una pluralidad de líneas de alimentacion de gas (34, 35, 36) cada una capaz de suministrar un gasto de flujo individual y composicion de gas a la pluralidad de canales (38, 44) en la fuente de plasma (16). Cada canal se circunda por una bobina RF energizada independientemente (54, 56) tal que la densidad de plasma puede variarse dentro de cada canal (38, 44) de la fuente de plasma (16). En operacion, una capa de material (66) que superpone una microplaqueta semiconductora (28) ya sea se mordenta o deposita uniformemente por control espacial localizado de las características de plasma en cada ubicacion (64) a través de la microplaqueta semiconductora (28).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08605697 | 1996-02-22 | ||
US08/605,697 US5683548A (en) | 1996-02-22 | 1996-02-22 | Inductively coupled plasma reactor and process |
Publications (2)
Publication Number | Publication Date |
---|---|
MXPA97000586A MXPA97000586A (es) | 1997-08-01 |
MX9700586A true MX9700586A (es) | 1997-08-30 |
Family
ID=24424805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9700586A MX9700586A (es) | 1996-02-22 | 1997-01-22 | Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5683548A (es) |
EP (1) | EP0792947B1 (es) |
JP (1) | JP3959145B2 (es) |
KR (1) | KR100386388B1 (es) |
DE (1) | DE69734619T2 (es) |
MX (1) | MX9700586A (es) |
SG (1) | SG63686A1 (es) |
TW (1) | TW373226B (es) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114424318A (zh) * | 2019-09-27 | 2022-04-29 | 应用材料公司 | 单片式模块化高频等离子体源 |
Families Citing this family (121)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
JP4654176B2 (ja) * | 1996-02-22 | 2011-03-16 | 住友精密工業株式会社 | 誘導結合プラズマ・リアクタ |
JPH1081973A (ja) * | 1996-03-18 | 1998-03-31 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマcvd装置 |
JPH09251935A (ja) * | 1996-03-18 | 1997-09-22 | Applied Materials Inc | プラズマ点火装置、プラズマを用いる半導体製造装置及び半導体装置のプラズマ点火方法 |
DE69719108D1 (de) * | 1996-05-02 | 2003-03-27 | Tokyo Electron Ltd | Plasmabehandlungsgerät |
US5846883A (en) * | 1996-07-10 | 1998-12-08 | Cvc, Inc. | Method for multi-zone high-density inductively-coupled plasma generation |
JP3640478B2 (ja) * | 1996-09-20 | 2005-04-20 | アネルバ株式会社 | プラズマ処理装置 |
KR100505176B1 (ko) * | 1996-09-27 | 2005-10-10 | 서페이스 테크놀로지 시스템스 피엘씨 | 플라즈마가공장치 |
DE19643865C2 (de) * | 1996-10-30 | 1999-04-08 | Schott Glas | Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben |
US5981899A (en) * | 1997-01-17 | 1999-11-09 | Balzers Aktiengesellschaft | Capacitively coupled RF-plasma reactor |
US6267074B1 (en) * | 1997-02-24 | 2001-07-31 | Foi Corporation | Plasma treatment systems |
JP3483725B2 (ja) * | 1997-04-02 | 2004-01-06 | 株式会社日立製作所 | プラズマ処理装置及び処理方法 |
US6158384A (en) * | 1997-06-05 | 2000-12-12 | Applied Materials, Inc. | Plasma reactor with multiple small internal inductive antennas |
US5982100A (en) * | 1997-07-28 | 1999-11-09 | Pars, Inc. | Inductively coupled plasma reactor |
JP3814813B2 (ja) * | 1997-09-01 | 2006-08-30 | 株式会社エフオーアイ | プラズマ発生装置 |
US6028395A (en) * | 1997-09-16 | 2000-02-22 | Lam Research Corporation | Vacuum plasma processor having coil with added conducting segments to its peripheral part |
JP4104193B2 (ja) * | 1997-11-14 | 2008-06-18 | 株式会社エフオーアイ | プラズマ処理装置 |
US6028285A (en) * | 1997-11-19 | 2000-02-22 | Board Of Regents, The University Of Texas System | High density plasma source for semiconductor processing |
US6136165A (en) * | 1997-11-26 | 2000-10-24 | Cvc Products, Inc. | Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition |
US6274459B1 (en) | 1998-02-17 | 2001-08-14 | Silicon Genesis Corporation | Method for non mass selected ion implant profile control |
JP4001355B2 (ja) * | 1998-03-02 | 2007-10-31 | 株式会社エフオーアイ | プラズマ発生装置 |
JP3868620B2 (ja) * | 1998-03-02 | 2007-01-17 | 株式会社エフオーアイ | プラズマ発生装置 |
US6273022B1 (en) | 1998-03-14 | 2001-08-14 | Applied Materials, Inc. | Distributed inductively-coupled plasma source |
US5980686A (en) * | 1998-04-15 | 1999-11-09 | Applied Komatsu Technology, Inc. | System and method for gas distribution in a dry etch process |
JP3567736B2 (ja) * | 1998-05-25 | 2004-09-22 | 株式会社日立製作所 | プラズマ処理装置 |
US6204607B1 (en) * | 1998-05-28 | 2001-03-20 | Applied Komatsu Technology, Inc. | Plasma source with multiple magnetic flux sources each having a ferromagnetic core |
US6211092B1 (en) * | 1998-07-09 | 2001-04-03 | Applied Materials, Inc. | Counterbore dielectric plasma etch process particularly useful for dual damascene |
US6218640B1 (en) * | 1999-07-19 | 2001-04-17 | Timedomain Cvd, Inc. | Atmospheric pressure inductive plasma apparatus |
JP4046207B2 (ja) * | 1998-08-06 | 2008-02-13 | 株式会社エフオーアイ | プラズマ処理装置 |
US6235640B1 (en) * | 1998-09-01 | 2001-05-22 | Lam Research Corporation | Techniques for forming contact holes through to a silicon layer of a substrate |
JP4056144B2 (ja) * | 1998-09-10 | 2008-03-05 | 株式会社エフオーアイ | プラズマ処理装置 |
US6218251B1 (en) | 1998-11-06 | 2001-04-17 | Advanced Micro Devices, Inc. | Asymmetrical IGFET devices with spacers formed by HDP techniques |
KR100311234B1 (ko) * | 1999-01-18 | 2001-11-02 | 학교법인 인하학원 | 고품위 유도결합 플라즈마 리액터 |
US6348389B1 (en) * | 1999-03-11 | 2002-02-19 | Taiwan Semiconductor Manufacturing Company | Method of forming and etching a resist protect oxide layer including end-point etch |
US6165567A (en) * | 1999-04-12 | 2000-12-26 | Motorola, Inc. | Process of forming a semiconductor device |
US6458723B1 (en) | 1999-06-24 | 2002-10-01 | Silicon Genesis Corporation | High temperature implant apparatus |
JP3385528B2 (ja) | 1999-07-06 | 2003-03-10 | 日本電気株式会社 | ドライエッチング装置とドライエッチング方法 |
US6368988B1 (en) * | 1999-07-16 | 2002-04-09 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
ATE394789T1 (de) * | 1999-11-15 | 2008-05-15 | Lam Res Corp | Behandlungsvorrichtungen |
DE10060002B4 (de) * | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Vorrichtung zur Oberflächenbehandlung |
DE19960092A1 (de) * | 1999-12-14 | 2001-07-12 | Bosch Gmbh Robert | Beschichtungsverfahren |
US6367412B1 (en) * | 2000-02-17 | 2002-04-09 | Applied Materials, Inc. | Porous ceramic liner for a plasma source |
WO2001065895A2 (en) * | 2000-03-01 | 2001-09-07 | Tokyo Electron Limited | Electrically controlled plasma uniformity in a high density plasma source |
JP2001267305A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | プラズマ処理装置 |
JP2002008996A (ja) * | 2000-06-23 | 2002-01-11 | Mitsubishi Heavy Ind Ltd | 給電アンテナ及び給電方法 |
US6632322B1 (en) * | 2000-06-30 | 2003-10-14 | Lam Research Corporation | Switched uniformity control |
US6459066B1 (en) | 2000-08-25 | 2002-10-01 | Board Of Regents, The University Of Texas System | Transmission line based inductively coupled plasma source with stable impedance |
US6875700B2 (en) * | 2000-08-29 | 2005-04-05 | Board Of Regents, The University Of Texas System | Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges |
JP2002100623A (ja) * | 2000-09-20 | 2002-04-05 | Fuji Daiichi Seisakusho:Kk | 薄膜半導体製造装置 |
US6471830B1 (en) | 2000-10-03 | 2002-10-29 | Veeco/Cvc, Inc. | Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system |
JP4120561B2 (ja) * | 2000-10-03 | 2008-07-16 | 松下電器産業株式会社 | プラズマ処理方法およびプラズマ処理装置 |
US6534423B1 (en) * | 2000-12-27 | 2003-03-18 | Novellus Systems, Inc. | Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean |
US6633132B2 (en) * | 2001-01-23 | 2003-10-14 | Wafermasters Inc. | Plasma gereration apparatus and method |
US7510664B2 (en) * | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
US7591957B2 (en) * | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
JP4471514B2 (ja) * | 2001-02-26 | 2010-06-02 | 株式会社エフオーアイ | プラズマ処理装置 |
US6652711B2 (en) | 2001-06-06 | 2003-11-25 | Tokyo Electron Limited | Inductively-coupled plasma processing system |
US6893971B2 (en) * | 2001-07-19 | 2005-05-17 | Matsushita Electric Industrial Co., Ltd. | Dry etching method and apparatus |
KR200253559Y1 (ko) * | 2001-07-30 | 2001-11-22 | 주식회사 플라즈마트 | 회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조 |
US6676760B2 (en) | 2001-08-16 | 2004-01-13 | Appiled Materials, Inc. | Process chamber having multiple gas distributors and method |
US6660177B2 (en) * | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
US6887341B2 (en) * | 2001-11-13 | 2005-05-03 | Tokyo Electron Limited | Plasma processing apparatus for spatial control of dissociation and ionization |
US6913652B2 (en) * | 2002-06-17 | 2005-07-05 | Applied Materials, Inc. | Gas flow division in a wafer processing system having multiple chambers |
KR100481311B1 (ko) * | 2002-09-19 | 2005-04-07 | 최대규 | 플라즈마 프로세스 챔버 |
KR100500852B1 (ko) * | 2002-10-10 | 2005-07-12 | 최대규 | 원격 플라즈마 발생기 |
DE10247913A1 (de) * | 2002-10-14 | 2004-04-22 | Robert Bosch Gmbh | Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat |
KR100469890B1 (ko) * | 2002-10-24 | 2005-02-02 | 주식회사 아이피에스 | 건식식각용 반도체 제조장치 |
KR100488348B1 (ko) * | 2002-11-14 | 2005-05-10 | 최대규 | 플라즈마 프로세스 챔버 및 시스템 |
JP4753276B2 (ja) * | 2002-11-26 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US7371992B2 (en) * | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
KR100532365B1 (ko) * | 2003-04-10 | 2005-11-30 | 주식회사 아이피에스 | 균일한 플라즈마를 제공하는 유도 결합형 다중 코일플라즈마 소스 |
US7297892B2 (en) * | 2003-08-14 | 2007-11-20 | Rapt Industries, Inc. | Systems and methods for laser-assisted plasma processing |
US7304263B2 (en) * | 2003-08-14 | 2007-12-04 | Rapt Industries, Inc. | Systems and methods utilizing an aperture with a reactive atom plasma torch |
US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
US20050255245A1 (en) * | 2004-01-13 | 2005-11-17 | Fanton Mark A | Method and apparatus for the chemical vapor deposition of materials |
KR100661350B1 (ko) * | 2004-12-27 | 2006-12-27 | 삼성전자주식회사 | Mems 소자 패키지 및 그 제조방법 |
JP4961111B2 (ja) * | 2005-02-28 | 2012-06-27 | 富士フイルム株式会社 | 光電変換膜積層型固体撮像素子とその製造方法 |
KR100709354B1 (ko) * | 2005-06-17 | 2007-04-20 | 삼성전자주식회사 | 다채널 플라즈마 가속장치 |
KR100689848B1 (ko) * | 2005-07-22 | 2007-03-08 | 삼성전자주식회사 | 기판처리장치 |
JP4593413B2 (ja) | 2005-09-15 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法及び処理装置 |
JP4405973B2 (ja) * | 2006-01-17 | 2010-01-27 | キヤノンアネルバ株式会社 | 薄膜作製装置 |
KR101501426B1 (ko) * | 2006-06-02 | 2015-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 차압 측정들에 의한 가스 유동 제어 |
US7879184B2 (en) * | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
JP4094040B2 (ja) * | 2006-08-18 | 2008-06-04 | 株式会社エフオーアイ | プラズマ発生装置 |
US7829815B2 (en) * | 2006-09-22 | 2010-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable electrodes and coils for plasma density distribution control |
JP2008091750A (ja) * | 2006-10-04 | 2008-04-17 | Hitachi Kokusai Electric Inc | アッシング装置 |
WO2008100314A1 (en) * | 2007-02-15 | 2008-08-21 | Applied Materials, Inc. | System and method for chemical vapor deposition process control |
US8382900B2 (en) * | 2007-02-15 | 2013-02-26 | Applied Materials, Inc. | Localized linear microwave source array pumping to control localized partial pressure in flat and 3 dimensional PECVD coatings |
WO2008099896A1 (ja) | 2007-02-16 | 2008-08-21 | Foi Corporation | 誘導コイル、プラズマ発生装置およびプラズマ発生方法 |
US20080236491A1 (en) * | 2007-03-30 | 2008-10-02 | Tokyo Electron Limited | Multiflow integrated icp source |
US7976674B2 (en) * | 2007-06-13 | 2011-07-12 | Tokyo Electron Limited | Embedded multi-inductive large area plasma source |
US9105449B2 (en) * | 2007-06-29 | 2015-08-11 | Lam Research Corporation | Distributed power arrangements for localizing power delivery |
US8528498B2 (en) * | 2007-06-29 | 2013-09-10 | Lam Research Corporation | Integrated steerability array arrangement for minimizing non-uniformity |
GB0713821D0 (en) | 2007-07-17 | 2007-08-29 | P2I Ltd | A plasma deposition apparatus |
US8021487B2 (en) * | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
JP5297048B2 (ja) * | 2008-01-28 | 2013-09-25 | 三菱重工業株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP5262206B2 (ja) | 2008-03-12 | 2013-08-14 | 豊田合成株式会社 | Iii族窒化物半導体層の製造方法及びiii族窒化物半導体発光素子の製造方法 |
US7994724B2 (en) * | 2009-03-27 | 2011-08-09 | Ecole Polytechnique | Inductive plasma applicator |
FI124414B (fi) * | 2010-04-30 | 2014-08-29 | Beneq Oy | Lähde ja järjestely substraatin käsittelemiseksi |
US20110278260A1 (en) | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Inductive plasma source with metallic shower head using b-field concentrator |
JP5735232B2 (ja) * | 2010-08-02 | 2015-06-17 | 株式会社イー・エム・ディー | プラズマ処理装置 |
US9793126B2 (en) * | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
WO2013036619A2 (en) * | 2011-09-07 | 2013-03-14 | Applied Materials, Inc. | Method and apparatus for gas distribution and plasma application in a linear deposition chamber |
US10271416B2 (en) * | 2011-10-28 | 2019-04-23 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
DE102012017453A1 (de) | 2012-09-04 | 2014-03-06 | Manz Ag | Plasmabehandlungseinrichtung und Verfahren zur Behandlung zumindest eines Substrats |
CN103906338B (zh) * | 2012-12-31 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种等离子体装置 |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
GB201309583D0 (en) * | 2013-05-29 | 2013-07-10 | Spts Technologies Ltd | Apparatus for processing a semiconductor workpiece |
KR101526507B1 (ko) * | 2013-11-15 | 2015-06-09 | 피에스케이 주식회사 | 기판 처리 장치 및 방법 |
US20170092470A1 (en) * | 2015-09-28 | 2017-03-30 | Applied Materials, Inc. | Plasma reactor for processing a workpiece with an array of plasma point sources |
JP6857799B2 (ja) * | 2016-03-29 | 2021-04-14 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法、電子デバイスの製造方法 |
KR102015381B1 (ko) * | 2017-03-29 | 2019-08-29 | 세메스 주식회사 | 플라즈마 발생 유닛 및 이를 포함하는 기판 처리 장치 |
KR101932859B1 (ko) * | 2017-10-16 | 2019-03-20 | 성균관대학교산학협력단 | 플라즈마 소스 및 이를 이용한 플라즈마 발생장치 |
US11177067B2 (en) * | 2018-07-25 | 2021-11-16 | Lam Research Corporation | Magnetic shielding for plasma sources |
JP7169885B2 (ja) * | 2019-01-10 | 2022-11-11 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
KR102189337B1 (ko) * | 2019-07-17 | 2020-12-09 | 주식회사 유진테크 | 플라즈마 처리 장치 |
US11150120B2 (en) * | 2019-09-22 | 2021-10-19 | Applied Materials, Inc. | Low temperature thermal flow ratio controller |
TWI714366B (zh) * | 2019-11-26 | 2020-12-21 | 聚昌科技股份有限公司 | 線圈垂直位置可動態調整之蝕刻機結構 |
JP2022049494A (ja) * | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 半導体製造装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59129772A (ja) * | 1983-01-18 | 1984-07-26 | Ushio Inc | 光化学蒸着装置 |
DE3830249A1 (de) * | 1988-09-06 | 1990-03-15 | Schott Glaswerke | Plasmaverfahren zum beschichten ebener substrate |
US5091049A (en) * | 1989-06-13 | 1992-02-25 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US5269847A (en) * | 1990-08-23 | 1993-12-14 | Applied Materials, Inc. | Variable rate distribution gas flow reaction chamber |
US5356515A (en) * | 1990-10-19 | 1994-10-18 | Tokyo Electron Limited | Dry etching method |
US5241245A (en) * | 1992-05-06 | 1993-08-31 | International Business Machines Corporation | Optimized helical resonator for plasma processing |
US5449432A (en) * | 1993-10-25 | 1995-09-12 | Applied Materials, Inc. | Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication |
-
1996
- 1996-02-22 US US08/605,697 patent/US5683548A/en not_active Expired - Lifetime
- 1996-12-19 TW TW085115688A patent/TW373226B/zh not_active IP Right Cessation
-
1997
- 1997-01-08 SG SG1997000029A patent/SG63686A1/en unknown
- 1997-01-22 MX MX9700586A patent/MX9700586A/es unknown
- 1997-02-13 DE DE69734619T patent/DE69734619T2/de not_active Expired - Lifetime
- 1997-02-13 EP EP97102279A patent/EP0792947B1/en not_active Expired - Lifetime
- 1997-02-18 JP JP04988897A patent/JP3959145B2/ja not_active Expired - Lifetime
- 1997-02-22 KR KR1019970005425A patent/KR100386388B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114424318A (zh) * | 2019-09-27 | 2022-04-29 | 应用材料公司 | 单片式模块化高频等离子体源 |
CN114424318B (zh) * | 2019-09-27 | 2024-03-12 | 应用材料公司 | 单片式模块化高频等离子体源 |
Also Published As
Publication number | Publication date |
---|---|
JPH09237698A (ja) | 1997-09-09 |
US5683548A (en) | 1997-11-04 |
DE69734619D1 (de) | 2005-12-22 |
EP0792947A3 (en) | 1999-04-14 |
KR970063563A (ko) | 1997-09-12 |
SG63686A1 (en) | 1999-03-30 |
EP0792947B1 (en) | 2005-11-16 |
TW373226B (en) | 1999-11-01 |
KR100386388B1 (ko) | 2003-08-14 |
JP3959145B2 (ja) | 2007-08-15 |
DE69734619T2 (de) | 2006-06-08 |
EP0792947A2 (en) | 1997-09-03 |
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