KR970060530A - 유전체 분리형 박막 반도체 장치 - Google Patents
유전체 분리형 박막 반도체 장치 Download PDFInfo
- Publication number
- KR970060530A KR970060530A KR1019960052196A KR19960052196A KR970060530A KR 970060530 A KR970060530 A KR 970060530A KR 1019960052196 A KR1019960052196 A KR 1019960052196A KR 19960052196 A KR19960052196 A KR 19960052196A KR 970060530 A KR970060530 A KR 970060530A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- thin film
- oxide film
- semiconductor device
- silicon film
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract 10
- 239000010408 film Substances 0.000 claims abstract 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract 13
- 239000010703 silicon Substances 0.000 claims abstract 13
- 210000000746 body region Anatomy 0.000 claims abstract 8
- 238000002955 isolation Methods 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
유전체 분리형 (SIO형) 박막 트랜지스터는 반도체 기판 상에 형성된 매설 산화막과 매설 산화막 상에 형성된 제1전도성 타입의 실리콘 막과, 실리콘 막 상에 형성된 상부 산화막을 구비한다. 실리콘 막은 제2전도성 타입의 보디 영역과 제1전도성 타입의 소스 영역과, 제1전도형 타입의 드레인 영역과, 제1전도성 드리프트 영역을 가진다. 실리콘 막은 도핑 영역에 형성된 T1 두께의 제1부분 및 보디 영역이 매설 산화막에 도달하도록 형성된 보디 영역에 T2 두께의 제2부분을 형성한다.
두께(T1 및 T2)는 다음 관계를 만족하도록 결정된다.
0.4㎛<T1, 0.4㎛≤T2≤1.5㎛, T2<T1.
트랜지스터는 개선된 동력 소산과 높은 내전압 및 낮은 저항성을 나타내고, 트랜지스터 제조 공정에 이점을 제공한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5a도는 본 발명에 따른 제2실시예의 박막 트랜지스터의 단면도이다.
제5b도는 제5a도의 필드 플레이트와 선형 도핑 영역 사이의 측면 거리(L)과 파손 전압 (V) 간의 관계를 나타낸 도면.
Claims (7)
- 유전체 분리형(SOI형) 박막 반도체 장치에 있어서, 반도체 기판 상에 형성된 매설 산화막과; 상기 매설 산화막 상에 형성된 제1전도형의 실리콘 막과; 상기 실리콘 막상에 형성된 상부 산화막과; 상기 보디 영역 및 소스 영역 모두에 접촉되는 소스 전극과; 상기 드레인 영역에 접촉되는 드레인 전극과; 박막 산화막에 의해 상기 실리콘 막으로부터 이격되며 상기 소스 및 드레인 전극 사이에 배치된 게이트 전극을 구비하며 상기 실리콘 막이 제2전도형의 보디 영역과, 상기 제1전도형의 소스 영역과, 상기 제1전도형의 드레인 영역과, 상기 소스와 드레인 영역 사이에 형성된 상기 제1전도형의 드리프트 영역을 가지며, 상기 소스 영역은 상기 매설 산화막으로부터 이격되는 상기 보디 영역에 형성되며, 상기 실리콘 막은 상기 드리프트 영역이 형성되는 제1부분의 두께(T1)와, 상기 보디 영역이 형성되어 상기 매설 산화막에 도달하는 제2부분의 두께(T2)로 형성되며, 상기 두께(T1 및 T2)가 다음의 관계식0.4㎛<T1, 0.4㎛≤T2≤1.5㎛, T2<T1을 만족시키는 것을 특징으로 하는 유전체 분리형(SOI형) 박막 반도체 장치.
- 제1항에 있어서, 상기 제1 및 제2전도형은 각각 n형 및 p형인 것을 특징으로 하는 박막 반도체 장치.
- 제1항에 있어서, 상기 드리프트 영역은 측면 선형 도핑 영역을 형성하는 것을 특징으로 하는 박막 반도체 장치.
- 제3항에 있어서, 상기 게이트 전극은 게이트 전극에 단락되는 필드 플레이트를 가지며, 상기 게이트 전극과 필드 플레이트는 상기 실리콘 막으로부터 이격관계로 상기 선형 도핑 영역 상에 놓이지 않고 측면으로 연장되는 것을 특징으로 하는 박막 반도체 장치.
- 제1항에 있어서, 상기 두께(T1)는 1㎛ 이상인 것을 특징으로 하는 박막 반도체 장치.
- 제1항에 있어서, 상기 실리콘 막은 상부 면상에 상기 제2부분으로부터 상기 제1부분으로 연장되는 기울기로 형성되고, 상기 보디 영역은 상기 제2부분으로부터 상기 제1부분을 향하여 상기 기울기를 따라 연장되며, 상기 게이트 전극은 상기 기울기와 평행하고, 상기 박막 산화막에서 상기 기울기로부터 이격된 관계로 연장되는 필드 플레이트를 가지는 것을 특징으로 하는 박막 반도체 장치.
- 제1항에 있어서, 상기 드레인 영역은 상기 매설 산화막으로부터 이격되도록 실리콘 막에 형성되는 것을 특징으로 하는 박막 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP96-012172 | 1996-01-26 | ||
JP96-012173 | 1996-01-26 | ||
JP01217396A JP3210853B2 (ja) | 1996-01-26 | 1996-01-26 | 半導体装置 |
JP8012172A JPH09205210A (ja) | 1996-01-26 | 1996-01-26 | 誘電体分離型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970060530A true KR970060530A (ko) | 1997-08-12 |
KR100249290B1 KR100249290B1 (ko) | 2000-03-15 |
Family
ID=26347747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960052196A KR100249290B1 (ko) | 1996-01-26 | 1996-10-31 | 절연체상 실리콘(soi)형 박막트랜지스터 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5780900A (ko) |
EP (1) | EP0786818B1 (ko) |
KR (1) | KR100249290B1 (ko) |
CN (1) | CN1081833C (ko) |
DE (1) | DE69634745T2 (ko) |
HK (1) | HK1000853A1 (ko) |
TW (1) | TW360982B (ko) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3527034B2 (ja) * | 1996-09-20 | 2004-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6211551B1 (en) * | 1997-06-30 | 2001-04-03 | Matsushita Electric Works, Ltd. | Solid-state relay |
US6310378B1 (en) | 1997-12-24 | 2001-10-30 | Philips Electronics North American Corporation | High voltage thin film transistor with improved on-state characteristics and method for making same |
US6346451B1 (en) | 1997-12-24 | 2002-02-12 | Philips Electronics North America Corporation | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
KR100257765B1 (ko) * | 1997-12-30 | 2000-06-01 | 김영환 | 기억소자 및 그 제조 방법 |
JPH11297941A (ja) * | 1998-04-09 | 1999-10-29 | Nec Corp | 半導体装置 |
US5969387A (en) * | 1998-06-19 | 1999-10-19 | Philips Electronics North America Corporation | Lateral thin-film SOI devices with graded top oxide and graded drift region |
US6232636B1 (en) | 1998-11-25 | 2001-05-15 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region |
US6127703A (en) * | 1999-08-31 | 2000-10-03 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region |
US6221737B1 (en) * | 1999-09-30 | 2001-04-24 | Philips Electronics North America Corporation | Method of making semiconductor devices with graded top oxide and graded drift region |
US6369408B1 (en) * | 1999-10-06 | 2002-04-09 | Agere Systems Guardian Corp. | GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same |
US6166411A (en) * | 1999-10-25 | 2000-12-26 | Advanced Micro Devices, Inc. | Heat removal from SOI devices by using metal substrates |
US6483147B1 (en) | 1999-10-25 | 2002-11-19 | Advanced Micro Devices, Inc. | Through wafer backside contact to improve SOI heat dissipation |
US6191453B1 (en) * | 1999-12-13 | 2001-02-20 | Philips Electronics North America Corporation | Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology |
TW564557B (en) * | 1999-12-22 | 2003-12-01 | Matsushita Electric Works Ltd | Semiconductor device and process for producing the same |
US6552395B1 (en) | 2000-01-03 | 2003-04-22 | Advanced Micro Devices, Inc. | Higher thermal conductivity glass for SOI heat removal |
US6613643B1 (en) | 2000-01-28 | 2003-09-02 | Advanced Micro Devices, Inc. | Structure, and a method of realizing, for efficient heat removal on SOI |
US6847081B2 (en) * | 2001-12-10 | 2005-01-25 | Koninklijke Philips Electronics N.V. | Dual gate oxide high-voltage semiconductor device |
KR100489802B1 (ko) * | 2002-12-18 | 2005-05-16 | 한국전자통신연구원 | 고전압 및 저전압 소자의 구조와 그 제조 방법 |
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
DE102004005948B4 (de) | 2004-02-02 | 2009-04-02 | Atmel Germany Gmbh | MOS-Transistor und Verfahren zur Herstellung einer MOS-Transistorstruktur |
CN100421255C (zh) * | 2004-04-28 | 2008-09-24 | 台湾积体电路制造股份有限公司 | 完全耗尽型soi多临界电压应用 |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
KR100865365B1 (ko) * | 2005-01-12 | 2008-10-24 | 샤프 가부시키가이샤 | 반도체 장치의 제조방법 및 반도체 장치 |
US7217604B2 (en) * | 2005-01-31 | 2007-05-15 | International Business Machines Corporation | Structure and method for thin box SOI device |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
US20060255377A1 (en) * | 2005-05-12 | 2006-11-16 | Der-Wei Tu | Field effect transistor with novel field-plate structure |
EP1921669B1 (en) | 2006-11-13 | 2015-09-02 | Cree, Inc. | GaN based HEMTs with buried field plates |
US7598128B2 (en) * | 2007-05-22 | 2009-10-06 | Sharp Laboratories Of America, Inc. | Thin silicon-on-insulator double-diffused metal oxide semiconductor transistor |
JP5479671B2 (ja) | 2007-09-10 | 2014-04-23 | ローム株式会社 | 半導体装置 |
US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
US10026830B2 (en) | 2015-04-29 | 2018-07-17 | Stmicroelectronics, Inc. | Tunneling field effect transistor (TFET) having a semiconductor fin structure |
US11195915B2 (en) * | 2019-04-15 | 2021-12-07 | Texas Instruments Incorporated | Semiconductor devices with a sloped surface |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4922327A (en) * | 1987-12-24 | 1990-05-01 | University Of Toronto Innovations Foundation | Semiconductor LDMOS device with upper and lower passages |
US5246870A (en) | 1991-02-01 | 1993-09-21 | North American Philips Corporation | Method for making an improved high voltage thin film transistor having a linear doping profile |
US5362979A (en) * | 1991-02-01 | 1994-11-08 | Philips Electronics North America Corporation | SOI transistor with improved source-high performance |
DE69209678T2 (de) | 1991-02-01 | 1996-10-10 | Philips Electronics Nv | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
JP2731056B2 (ja) * | 1991-10-09 | 1998-03-25 | シャープ株式会社 | 薄膜トランジスタの製造方法 |
EP0562271B1 (en) * | 1992-03-26 | 1998-01-14 | Texas Instruments Incorporated | High voltage structure with oxide isolated source and resurf drift region in bulk silicon |
JP3217554B2 (ja) * | 1993-09-17 | 2001-10-09 | 株式会社東芝 | 高耐圧半導体装置 |
US5548150A (en) * | 1993-03-10 | 1996-08-20 | Kabushiki Kaisha Toshiba | Field effect transistor |
US5378912A (en) * | 1993-11-10 | 1995-01-03 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region |
US5510275A (en) * | 1993-11-29 | 1996-04-23 | Texas Instruments Incorporated | Method of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor material |
US5382818A (en) * | 1993-12-08 | 1995-01-17 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
-
1996
- 1996-10-14 TW TW085112516A patent/TW360982B/zh not_active IP Right Cessation
- 1996-10-16 DE DE69634745T patent/DE69634745T2/de not_active Expired - Lifetime
- 1996-10-16 EP EP96116617A patent/EP0786818B1/en not_active Expired - Lifetime
- 1996-10-17 US US08/733,164 patent/US5780900A/en not_active Expired - Lifetime
- 1996-10-30 CN CN96122891A patent/CN1081833C/zh not_active Expired - Fee Related
- 1996-10-31 KR KR1019960052196A patent/KR100249290B1/ko not_active IP Right Cessation
-
1997
- 1997-12-10 HK HK97102374A patent/HK1000853A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0786818A2 (en) | 1997-07-30 |
TW360982B (en) | 1999-06-11 |
US5780900A (en) | 1998-07-14 |
CN1158009A (zh) | 1997-08-27 |
EP0786818B1 (en) | 2005-05-18 |
CN1081833C (zh) | 2002-03-27 |
DE69634745T2 (de) | 2006-02-23 |
EP0786818A3 (en) | 1998-03-25 |
HK1000853A1 (en) | 2002-08-23 |
DE69634745D1 (de) | 2005-06-23 |
KR100249290B1 (ko) | 2000-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970060530A (ko) | 유전체 분리형 박막 반도체 장치 | |
KR100675990B1 (ko) | 드레인 확장 영역을 갖는 측면 박막 실리콘 온 절연체(soi) pmos 디바이스 | |
KR100652449B1 (ko) | 횡형 박막 실리콘-온-절연체 jfet 디바이스 | |
US5382818A (en) | Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode | |
JP3393148B2 (ja) | 高電圧パワートランジスタ | |
JP3871352B2 (ja) | 薄膜soi装置及びその製造方法 | |
KR970072205A (ko) | 에스. 오. 아이(soi)형 트랜지스터 및 그 제조방법 | |
KR950034767A (ko) | Mis형 반도체장치 | |
US5648671A (en) | Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile | |
US5710451A (en) | High-voltage lateral MOSFET SOI device having a semiconductor linkup region | |
SE513283C2 (sv) | MOS-transistorstruktur med utsträckt driftregion | |
KR940019013A (ko) | 고전압 트랜지스터 | |
KR960019497A (ko) | Soi 구조를 가지는 반도체장치 및 그의 제조방법 | |
US10170542B2 (en) | Semiconductor device | |
KR900013652A (ko) | 감소된 온 저항을 가진 soi구조의 고전압 반도체 장치 | |
KR100701712B1 (ko) | 수평 박막 soi 디바이스 | |
KR930020738A (ko) | 고전압 전력 트랜지스터 및 그 제조 방법 | |
KR100320894B1 (ko) | 반도체장치 | |
KR960002880A (ko) | 실리콘 온 인슐레이터(soi) 트랜지스터 | |
KR950012769A (ko) | 반도체 소자 | |
KR960019766A (ko) | 에스오아이(soi) 기판상의 모스페트(mosfet) | |
KR930022601A (ko) | 반도체 장치의 제조방법 | |
KR19980084367A (ko) | 실리콘-온-인슐레이터 기판을 사용한 저감 표면 전계형 횡형 이중-확산 모스 트랜지스터에 대한 모델링 방법 | |
KR950010138A (ko) | 엠엔오에스(mnos)형 반도체장치 | |
KR970063782A (ko) | 고전압 트랜지스터 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121203 Year of fee payment: 14 |
|
LAPS | Lapse due to unpaid annual fee |