KR970012323A - 자기저항효과 소자 및 메모리 소자 - Google Patents

자기저항효과 소자 및 메모리 소자 Download PDF

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KR970012323A
KR970012323A KR1019960034422A KR19960034422A KR970012323A KR 970012323 A KR970012323 A KR 970012323A KR 1019960034422 A KR1019960034422 A KR 1019960034422A KR 19960034422 A KR19960034422 A KR 19960034422A KR 970012323 A KR970012323 A KR 970012323A
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film
element according
magnetic
magnetic film
semiconductor
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KR100230064B1 (ko
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히로시 사카키마
타케시 우에노야마
야스히로 가와와케
유스케 이리메
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모리시타 요이치
마츠시타덴키산교 가부시키가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

본 발명은 작은 자계에서 큰 자기저항변화를 표시하는 자기저항효과소자 및 이것을 이용한 메모리소자를 제공하기 위해 기판(1)상에 버퍼충둥을 통하여 여기광용의 윈도우가 되는 반도체막(2)을 설치한다. 반도체막(2) 상에 반도체막(3)을 설치하고, 반도체막(3)상에 비자성 금속막(혹은 비자성 절연막)(4)을 설치한다. 비자성 금속막(혹은 비자성 절연막)(4)상에 자기화 곡선의 각형성이 양호한 자성막(5)을 설치한다. 기판(1)의 하면에 전극(6)을 형성하고, 자성막(5)상에 전극(7)을 형성한다. 윈도우용 반도체막(2)에 레이저광을 조사하여 반도체막(3)중에 스핀 편극한 전자를 여기시켜, 자성막(5)의 계면에서의 전자의 산란이 자성막(5)의 자기화 방향과 여기된 전자의 스핀 편극상태에 의존하는 것을 이용한다.

Description

자기저항효과 소자 및 메모리 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 자기저항효과 소자의 일실시예를 도시하는 개략단면도이다.
제2도는 본 발명에 관한 메모리 소자의 일실시예를 도시하는 개략단면도이다.

Claims (23)

  1. 편향 가능한 광원과, 상기 광원을 사용한 광 여기에 의해 전자의 스핀 편극이 가능한 반도체부와, 자성막부와, 상기 반도체부와 상기 자성막부의 각각에 형성된 전극부를 구비한 자기저항효과 소자.
  2. 제1항에 있어서, 반도체부가 격자정수가 다른 2종류의 반도체로 이루어지는 자기저항효과 소자.
  3. 제1항에 있어서, 자성막부와 반도체부와의 사이에 비자성금속막이 형성된 자기저항효과 소자.
  4. 제3항에 있어서, 비자성 금속막이 Cu, Ag 및 Au에서 선택되는 적어도 1개인 자기저항효과 소자 또는 메모리 소자.
  5. 제3항에 있어서, 비자성 금속막이 2종류의 비자성 금속막으로 이루어지는 자기저항효과 소자.
  6. 제5항에 있어서, 2종류의 비자성 금속막중 반도체부에 접하는 측의 막이 Cs로 형성되며, 자성막부에 접하는 측의 막이 Cu, Ag 및 Au에서 선택되는 적어도 1개로 형성되어 있는 자기저항효과 소자.
  7. 제3항에 있어서, 비자성 금속막의 막두께가 100nm 이하인 자기저항효과 소자.
  8. 제1항에 있어서, 자성막부와 반도체부와의 사이에 비자성 절연막이 형성된 자기저항효과 소자.
  9. 제8항에 있어서, 비자성 절연막이 반도체와 동일한 결정구조를 가지는 자기저항효과 소자.
  10. 제1항에 있어서, 자성막부는 NiXCoYFeZ를 주성분으로 하고, 원자조성비가 X=0.6~0.9, Y=0~0.4, Z=0~0.3의 범위의 강자성막인 자기저항효과 소자.
  11. 제1항에 있어서, 자성막부는 NiX'CoY'FeZ'를 주성분으로 하고, 원자조성비가 X'=0~0.4, Y'=0.2~0.95, Z'=0~0.5의 범위의 강자성막인 자기저항효과 소자.
  12. 편향 가능한 광원과, 상기 광원을 사용한 광 여기에 의해 전자의 스핀 편극이 가능한 반도체부와 상기 반도체부에 접해 형성된 각형의 자기화 곡선을 가지는 자성막부와, 상기 반도체부와 상기 자성막부의 각각에 접해 형성된 정보판독용 도체선부와, 상기 자성막부의 근방에 절연막을 통하여 형성된 정보기록용 도체선부를 구비한 메모리 소자.
  13. 제12항에 있어서, 반도체부가 격자정수가 다른 2종류의 반도체로 이루어지는 메모리 소자.
  14. 제12항에 있어서, 자성막부와 반도체부와의 사이에 비자성 금속막이 형성된 메모리 소자.
  15. 제14항에 있어서, 비자성 금속막이 Cu, Ag 및 Au에서 선택되는 적어도 1개인 메모리 소자.
  16. 제14항에 있어서, 비자성 금속막이 2종류의 비자성 금속막으로 이루어지는 메모리 소자.
  17. 제16항에 있어서, 2종류의 비자성 금속막중 반도체부에 접하는 측의 막이 Cs로 형성되며, 자성막부에 접하는 측의 막이 Cu, Ag 및 Au에서 선택되는 적어도 1개의 형성되어 메모리 소자.
  18. 제14항에 있어서, 비자성 금속막의 막두께가 100nm 이하인 메모리 소자.
  19. 제12항에 있어서, 자성막부와 반도체부와의 사이에 비자성 절연막이 설치된 메모리 소자.
  20. 제19항에 있어서, 비자성 절연막이 반도체부와 동일한 결정구조를 가지는 메모리 소자.
  21. 제12항에 있어서, 자성막부는 NiXCoYFeZ를 주성분으로 하고, 원자조성비가 X=0.6~0.9, Y=0~0.4, Z=0~0.3의 범위의 강자성막인 메모리 소자.
  22. 제12항에 있어서, 자성막부는 NiX'CoY'FeZ'를 주성분으로 하고, 원자조성비가 X'=0~0.4, Y'=0.2~0.95, Z'=0~0.5의 범위의 강자성막인 메모리 소자.
  23. 제12항에 있어서, 정보기록용 도체선부가 직교하는 2개의 도체선으로 이루어지고, 또한 자성막부의 근방에 있는 메모리 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960034422A 1995-08-21 1996-08-20 자기저항효과 소자 및 메모리 소자 KR100230064B1 (ko)

Applications Claiming Priority (4)

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JP21216595 1995-08-21
JP95-212165 1995-08-21
JP29440995A JP3207094B2 (ja) 1995-08-21 1995-11-13 磁気抵抗効果素子及びメモリー素子
JP95-294409 1995-11-13

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KR100230064B1 KR100230064B1 (ko) 1999-11-15

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US (1) US5691936A (ko)
EP (1) EP0759619B1 (ko)
JP (1) JP3207094B2 (ko)
KR (1) KR100230064B1 (ko)
CN (1) CN1130693C (ko)
DE (1) DE69617833T2 (ko)

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EP0759619A3 (en) 1998-10-28
JP3207094B2 (ja) 2001-09-10
CN1130693C (zh) 2003-12-10
EP0759619A2 (en) 1997-02-26
EP0759619B1 (en) 2001-12-12
KR100230064B1 (ko) 1999-11-15
DE69617833D1 (de) 2002-01-24
US5691936A (en) 1997-11-25

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