KR960035591U - Sheet-fed plasma low pressure chemical vapor deposition equipment - Google Patents

Sheet-fed plasma low pressure chemical vapor deposition equipment

Info

Publication number
KR960035591U
KR960035591U KR2019950006520U KR19950006520U KR960035591U KR 960035591 U KR960035591 U KR 960035591U KR 2019950006520 U KR2019950006520 U KR 2019950006520U KR 19950006520 U KR19950006520 U KR 19950006520U KR 960035591 U KR960035591 U KR 960035591U
Authority
KR
South Korea
Prior art keywords
sheet
vapor deposition
low pressure
chemical vapor
pressure chemical
Prior art date
Application number
KR2019950006520U
Other languages
Korean (ko)
Other versions
KR0138989Y1 (en
Inventor
황철주
Original Assignee
황철주
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 황철주 filed Critical 황철주
Priority to KR2019950006520U priority Critical patent/KR0138989Y1/en
Priority to US08/571,404 priority patent/US5928427A/en
Priority to TW084113390A priority patent/TW340138B/en
Priority to DE69522539T priority patent/DE69522539T2/en
Priority to JP32847595A priority patent/JP3889074B2/en
Priority to EP95309190A priority patent/EP0717126B1/en
Priority to AT95309190T priority patent/ATE205263T1/en
Publication of KR960035591U publication Critical patent/KR960035591U/en
Application granted granted Critical
Publication of KR0138989Y1 publication Critical patent/KR0138989Y1/en
Priority to US09/348,235 priority patent/US6009831A/en
Priority to US09/348,236 priority patent/US6026764A/en
Priority to US09/348,237 priority patent/US6190460B1/en
Priority to JP2006165847A priority patent/JP2006261700A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR2019950006520U 1994-12-16 1995-04-01 Plasma low pressure chemical vapor depositing apparatus of single wafer type KR0138989Y1 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
KR2019950006520U KR0138989Y1 (en) 1995-04-01 1995-04-01 Plasma low pressure chemical vapor depositing apparatus of single wafer type
US08/571,404 US5928427A (en) 1994-12-16 1995-12-13 Apparatus for low pressure chemical vapor deposition
TW084113390A TW340138B (en) 1994-12-16 1995-12-15 Apparatus for low pressure chemical vapor deposition the invention relates to an apparatus for low pressure chemical vapor deposition
JP32847595A JP3889074B2 (en) 1994-12-16 1995-12-18 Low pressure chemical vapor deposition equipment
DE69522539T DE69522539T2 (en) 1994-12-16 1995-12-18 Device for chemical vapor deposition at low pressure
EP95309190A EP0717126B1 (en) 1994-12-16 1995-12-18 Apparatus for low pressure chemical vapor deposition
AT95309190T ATE205263T1 (en) 1994-12-16 1995-12-18 DEVICE FOR CHEMICAL VAPOR DEPOSITION AT LOW PRESSURE
US09/348,235 US6009831A (en) 1994-12-16 1999-07-06 Apparatus for low pressure chemical vapor deposition
US09/348,236 US6026764A (en) 1994-12-16 1999-07-06 Apparatus for low pressure chemical vapor deposition
US09/348,237 US6190460B1 (en) 1994-12-16 1999-07-06 Apparatus for low pressure chemical vapor depostion
JP2006165847A JP2006261700A (en) 1994-12-20 2006-06-15 Low-pressure cvd apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950006520U KR0138989Y1 (en) 1995-04-01 1995-04-01 Plasma low pressure chemical vapor depositing apparatus of single wafer type

Publications (2)

Publication Number Publication Date
KR960035591U true KR960035591U (en) 1996-11-21
KR0138989Y1 KR0138989Y1 (en) 1999-04-15

Family

ID=19410597

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950006520U KR0138989Y1 (en) 1994-12-16 1995-04-01 Plasma low pressure chemical vapor depositing apparatus of single wafer type

Country Status (1)

Country Link
KR (1) KR0138989Y1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100423953B1 (en) * 2001-03-19 2004-03-24 디지웨이브 테크놀러지스 주식회사 Chemical Vapor Deposition Apparatus

Also Published As

Publication number Publication date
KR0138989Y1 (en) 1999-04-15

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20080909

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee