KR960026180A - 반도체소자의 제조방법 - Google Patents

반도체소자의 제조방법 Download PDF

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Publication number
KR960026180A
KR960026180A KR1019940037489A KR19940037489A KR960026180A KR 960026180 A KR960026180 A KR 960026180A KR 1019940037489 A KR1019940037489 A KR 1019940037489A KR 19940037489 A KR19940037489 A KR 19940037489A KR 960026180 A KR960026180 A KR 960026180A
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KR
South Korea
Prior art keywords
junction region
impurity junction
semiconductor device
conductive layer
manufacturing
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Application number
KR1019940037489A
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English (en)
Other versions
KR0140726B1 (ko
Inventor
이석현
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940037489A priority Critical patent/KR0140726B1/ko
Publication of KR960026180A publication Critical patent/KR960026180A/ko
Application granted granted Critical
Publication of KR0140726B1 publication Critical patent/KR0140726B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체소자의 제조방법에 관한 것으로, 반도체기판 상부에 소자분리절연막, 게이트전극 및 불순물 접합영역을순차적으로 형성하고 콘택마스크를 이용한 식각공정으로 상기 불순물 접합영역의 일정두께까지 식각한 다음, 식각공정시손상되지 않는 상기 식각된 불순물 접합영역의 측벽을 이용하여 도전층을 콘택함으로써 반도체소자의 콘택저항을 감소시켜 반도체소자의 고집적화를 가능하게 하고 반도체소자의 신뢰성을 향상시키는 기술이다.

Description

반도체소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1d도는 본 발명의 실시예에 따른 반도체소자 제조공정을 도시한 단면도이다.

Claims (2)

  1. 반도체기판 상부에 소자분리절연막, 게이트전극 및 불순물 접합영역을 순차적으로 형성하는 공정과, 콘택마스크를 이용한 식각공정으로 상기 불순물 접합영역을 노출시키는 공정과, 계속적으로 상기 노출된 불순물 접합영역을일정두께 이방성식각함으로써 콘택홀을 형성하는 공정과, 상기 식각된 불순물 접합영역을 도전층을 콘택시키는 공정을 포함하는 반도체소자의 제조방법.
  2. 제1항에 있어서, 상기 도전층 콘택공정은 상기 식각된 불순물 접합영역의 측벽을 이용하여 실시되는 것을특징으로 하는 반도체소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940037489A 1994-12-27 1994-12-27 반도체 소자의 제조방법 KR0140726B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940037489A KR0140726B1 (ko) 1994-12-27 1994-12-27 반도체 소자의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940037489A KR0140726B1 (ko) 1994-12-27 1994-12-27 반도체 소자의 제조방법

Publications (2)

Publication Number Publication Date
KR960026180A true KR960026180A (ko) 1996-07-22
KR0140726B1 KR0140726B1 (ko) 1998-07-15

Family

ID=19403986

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940037489A KR0140726B1 (ko) 1994-12-27 1994-12-27 반도체 소자의 제조방법

Country Status (1)

Country Link
KR (1) KR0140726B1 (ko)

Also Published As

Publication number Publication date
KR0140726B1 (ko) 1998-07-15

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