KR960005916A - 반도체소자의 공정결함 검사방법 - Google Patents

반도체소자의 공정결함 검사방법 Download PDF

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Publication number
KR960005916A
KR960005916A KR1019940016959A KR19940016959A KR960005916A KR 960005916 A KR960005916 A KR 960005916A KR 1019940016959 A KR1019940016959 A KR 1019940016959A KR 19940016959 A KR19940016959 A KR 19940016959A KR 960005916 A KR960005916 A KR 960005916A
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KR
South Korea
Prior art keywords
reference mark
wafer
semiconductor device
process defect
defect inspection
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Application number
KR1019940016959A
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English (en)
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KR0154158B1 (ko
Inventor
배상만
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940016959A priority Critical patent/KR0154158B1/ko
Priority to GB9514269A priority patent/GB2291267B/en
Priority to US08/502,178 priority patent/US5633173A/en
Priority to CN95107565A priority patent/CN1080927C/zh
Publication of KR960005916A publication Critical patent/KR960005916A/ko
Application granted granted Critical
Publication of KR0154158B1 publication Critical patent/KR0154158B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/54466—Located in a dummy or reference die
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 반도체소자의 공정결함 검출방법에 관한 것으로, 종래기술로 블랭크 웨이퍼에서 검출한 공정결함데이타와 패턴 웨이퍼에서 검출한 공정결함 데이타가 서로 상이하여 서로 연관시켜 공정결함을 분석하기가 어려웠다. 따라서, 본 발명은 보통의 웨이퍼 상부에 감광막을 이용하여 상기 웨이퍼 상, 하, 좌 또는 우측의 끝부분에만 기준마크를 형성하고 이를 이용하여 공정결함을 정확하게 검출함으로써 결함에 의한 작용을 쉽게 분석하여 반도체소자의 수율을 향상시킬 수 있다.

Description

반도체소자의 공정결함 검사방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 실시예에 의한 반도체소자의 공정결함 검출방법을 도시한 상세도.

Claims (7)

  1. 반도체소자의 공정결함검출방법에 있어서, 블랭크 웨이퍼의 상부에 기준마크를 형성하는 공정과, 결함검사장치에 상기 웨이퍼를 로딩시키고 정렬시키는 공정과, 상기 기준마크를 이용하여 패턴결함검사를 실시함으로써 결함데이타를 검출하고 상기 기준마크를 제거하는 공정을 포함하는 반도체소자의 공정결함 검출방법.
  2. 제1항에 있어서, 상기 기준마크는 감광막으로 형성하는 것을 특징으로 하는 반도체소자의 공정결함 검출방법.
  3. 제1항 또는 제2항에 있어서, 상기 기준마크는 상기 웨이퍼 상, 하, 좌 또는 우의 끝부분에 형성하는 것을 특징으로 하는 반도체소자의 공정결함 검출방법.
  4. 제1항 또는 제3항에 있어서, 상기 기준마크는 후공정의 잡파일(job file)을 이용하여 형성하는 것을 특징으로 하는 반도체소자의 공정결함 검출방법.
  5. 제1항 또는 제3항에 있어서, 상기 기준마크는 9㎜ 이하의 사각형으로 형성하는 것을 특징으로 하는 반도체소자의 공정결함 검출방법.
  6. 제1항에 있어서, 상기 기준마크는 솔벤트를 사용하여 제거하는 것을 특징으로 하는 반도체소자의 공정결함 검출방법.
  7. 제1항에 있어서, 상기 기준마크는 후공정에서 계속적으로 사용하는 것을 특징으로 하는 반도체소자의 공정결함 검출방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940016959A 1994-07-14 1994-07-14 반도체소자의 공정결함 검사방법 KR0154158B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940016959A KR0154158B1 (ko) 1994-07-14 1994-07-14 반도체소자의 공정결함 검사방법
GB9514269A GB2291267B (en) 1994-07-14 1995-07-13 Method for detecting wafer defects
US08/502,178 US5633173A (en) 1994-07-14 1995-07-13 Method for detecting wafer defects
CN95107565A CN1080927C (zh) 1994-07-14 1995-07-14 检测晶片缺陷的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940016959A KR0154158B1 (ko) 1994-07-14 1994-07-14 반도체소자의 공정결함 검사방법

Publications (2)

Publication Number Publication Date
KR960005916A true KR960005916A (ko) 1996-02-23
KR0154158B1 KR0154158B1 (ko) 1998-12-01

Family

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Family Applications (1)

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KR1019940016959A KR0154158B1 (ko) 1994-07-14 1994-07-14 반도체소자의 공정결함 검사방법

Country Status (4)

Country Link
US (1) US5633173A (ko)
KR (1) KR0154158B1 (ko)
CN (1) CN1080927C (ko)
GB (1) GB2291267B (ko)

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CN100380621C (zh) * 2005-04-08 2008-04-09 力晶半导体股份有限公司 晶片缺陷检测方法与***以及存储媒体
CN100465612C (zh) * 2005-06-10 2009-03-04 联华电子股份有限公司 缺陷检测方法
JP4837971B2 (ja) * 2005-10-07 2011-12-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN101295659B (zh) * 2007-04-29 2010-06-09 中芯国际集成电路制造(上海)有限公司 半导体器件的缺陷检测方法
CN101685786B (zh) * 2008-09-26 2011-06-01 上海华虹Nec电子有限公司 用光学显微镜自动检测硅片周边去边及缺陷的方法
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Also Published As

Publication number Publication date
CN1123911A (zh) 1996-06-05
US5633173A (en) 1997-05-27
CN1080927C (zh) 2002-03-13
GB2291267A (en) 1996-01-17
KR0154158B1 (ko) 1998-12-01
GB9514269D0 (en) 1995-09-13
GB2291267B (en) 1998-07-15

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