KR960002709A - 반도체 다이를 리드 프레임에 접착시키는 방법 및 성형 화합물 큐어링 방법 - Google Patents

반도체 다이를 리드 프레임에 접착시키는 방법 및 성형 화합물 큐어링 방법 Download PDF

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KR960002709A
KR960002709A KR1019950014791A KR19950014791A KR960002709A KR 960002709 A KR960002709 A KR 960002709A KR 1019950014791 A KR1019950014791 A KR 1019950014791A KR 19950014791 A KR19950014791 A KR 19950014791A KR 960002709 A KR960002709 A KR 960002709A
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South Korea
Prior art keywords
die
semiconductor die
lamp
support platform
molding compound
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KR1019950014791A
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KR100377981B1 (ko
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밍황
이. 스타크 레슬리
하이넨 가일
림필로 레오
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윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR960002709A publication Critical patent/KR960002709A/ko
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Publication of KR100377981B1 publication Critical patent/KR100377981B1/ko

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    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/1576—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

본 발명은 반도체 장치 어셈블리 동작시, 다이 접착 물질 및 성형화합물을 큐어링하기 위해 오븐 및 가열기 블럭 텅스텐 할로겐 램프 모듈과 같은 광 가열원을 사용하여 시간, 비용, 풋프린트 및 오염을 감소시키는 반도체 다이 접착 방법에 관한 것이다.

Description

반도체 다이를 리드 프레임에 접착시키는 방법 및 성형 화합물 큐어링 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 광 급속 다이 접착 큐어 장치 및 방법을 나타내는 개념도,
제3도는 바람직한 실시예의 광 급속 다이 접착 큐어 장치를 나타내는 부분적인 사시도.

Claims (16)

  1. 반도체 다이를 다이 지지 플랫폼(a support platform)에 접착시키기 위한 방법에 있어서, 다이 접착 물질을 상기 지지 플랫폼에 도포시키는 단계와, 상기 다이 접착 물질상에 반도체 다이를 배치시키는 단계와, 상기 반도체 다이 및 상기 지지 플랫폼을 가열시킴에 의해 상기 다이 접착 물질을 가열시키는 조사(radiation)에 상기 반도체 다이 및 상기 지지 플랫폼을 노출시키는 단계를 포함하는 것을 특징으로 하는 반도체 다이 접착 방법.
  2. 제1항에 있어서, 상기 반도체 다이 및 상기 지지 플랫폼을 상기 조사에 노출시키는 단계는 상기 반도체 다이를 램프에 노출시키는 단계를 포함하는 것을 특징으로 하는 반도체 다이 접착 방법.
  3. 제2항에 있어서, 상기 다이 지지 플랫폼은 리드 프레임인 것을 특징으로 하는 반도체 다이 접착 방법.
  4. 제3항에 있어서, 상기 다이 접착 물질은 중합체인 것을 특징으로 하는 반도체 다이 접착 방법.
  5. 제4항에 있어서, 상기 반도체 다이 및 상기 지지 플랫폼을 상기 램프에 노출시키는 단계는 상기 반도체 다이 및 상기 지지 플랫폼을 약 1분동안 상기 램프에 노출시키는 것을 특징으로 하는 반도체 다이 접착 방법.
  6. 제3항에 있어서, 상기 다이 접착 물질은 금속합금인 것을 특징으로 하는 반도체 다이 접착 방법.
  7. 제2항에 있어서, 상기 다이 지지 플랫폼 세라믹 기판인 것을 특징으로 하는 반도체 다이 접착 방법.
  8. 제7항에 있어서, 상기 다이 접착 물질은 중합체인 것을 특징으로 하는 반도체 다이 접착 방법.
  9. 제7항에 있어서, 상기 다이 접착 물질은 금속합금인 것을 특징으로 하는 반도체 다이 접착 방법.
  10. 제7항에 있어서, 상기 다이 접착 물질은 유리 페이스트인 것을 특징으로 하는 반도체 다이 접착 방법.
  11. 제2항에 있어서, 상기 램프는 텅스텐 할로겐 램프인 것을 특징으로 하는 반도체 다이 접착 방법.
  12. 제2항에 있어서, 상기 램프는 크세논 램프인 것을 특징으로 하는 반도체 다이 접착 방법.
  13. 반도체 다이를 리드 프레임에 접착시키기 위한 방법에 있어서, 중합체를 리드 프레임 상에 위치시키는 단계와, 반도체 다이를 상기 중합체 상에 위치시키는 단계와, 상기 중합체를 큐어시키기 위해 상기 반도체 다이를 선택적으로 가열시키는 단계를 포함하는 것을 특징으로 하는 반도체 다이 접착 방법.
  14. 제13항에 있어서, 상기 반도체 다이를 선택적으로 가열시키는 단계는 램프를 사용하는 것을 특징으로 하는 반도체 다이 접착 방법.
  15. 제13항에 있어서, 상기 반도체 다이를 선택적으로 가열시키는 단계는 상기 반도체 다이를 온도 T1으로 가열시키고 상기 리드 프레임을 온도 T1보다 낮은 온도 T2보다 가열시키는 것을 특징으로 하는 반도체 다이 접착방법.
  16. 반도체 장치를 캡슐화하는데 사용되는 성형 화합물을 큐어링하는 방법에 있어서, 상기 반도체 장치를 이송성형에 의해 성형 화합물과 캡술화 하는 단계와, 상기 캡슐화된 반도체 장치를 램프에 노출시킴으로써 상기 성형 화합물을 큐어링하는 단계를 포함하는 것을 특징으로 하는 성형 화합물 큐어링 방법.
    ※ 참고 사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950014791A 1994-06-07 1995-06-05 성형화합물큐어링방법 KR100377981B1 (ko)

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EP0691679A3 (en) 1996-05-01
KR100377981B1 (ko) 2003-05-27
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