KR930011127A - 반도체 웨이퍼의 모떼기 방법 - Google Patents

반도체 웨이퍼의 모떼기 방법 Download PDF

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Publication number
KR930011127A
KR930011127A KR1019920021023A KR920021023A KR930011127A KR 930011127 A KR930011127 A KR 930011127A KR 1019920021023 A KR1019920021023 A KR 1019920021023A KR 920021023 A KR920021023 A KR 920021023A KR 930011127 A KR930011127 A KR 930011127A
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KR
South Korea
Prior art keywords
semiconductor wafer
grindstone
periphery
rotating
rotation axis
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KR1019920021023A
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English (en)
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KR0185234B1 (ko
Inventor
카쯔오 혼다
요시오 카모시타
신지 사바오카
카쯔히로 타꼬
Original Assignee
원본미기재
가부시키가이샤 토쿄 세이미쯔
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from JP31475591A external-priority patent/JP2876572B2/ja
Priority claimed from JP32914191A external-priority patent/JPH05162054A/ja
Application filed by 원본미기재, 가부시키가이샤 토쿄 세이미쯔 filed Critical 원본미기재
Publication of KR930011127A publication Critical patent/KR930011127A/ko
Application granted granted Critical
Publication of KR0185234B1 publication Critical patent/KR0185234B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

본 발명에서는 반도체 웨이퍼(20)의 회전축P-P에 대하여, 숫돌(22)의 회전축O-O는 반도체 웨이퍼(20)의 접선방향에만큼 경사져 있다.
따라서, 숫돌(22)의 숫돌립자 운동방향은 연삭방향분력 Al과 직각방향분력 A2에 나누어지고, 이들의 분력이 작용숫돌립자수를 증대시켜 모떼기 형상의 정밀도 및 면 정밀도 향상이 도모된다.
본 발명에서는 회전하는 숫돌(22)을 경사시켜 연삭면(24)에 따라 왕복이동시키면서 회전하는 반도체 웨이퍼의 주연을 모떼기 가공하므로, 숫돌의 작용숫돌립자수를 증대시켜 모떼기 형상의 정밀도 및 면거칠기 향상이 도모된다.

Description

반도체 웨이퍼의 모떼기 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 가공방법을 표시한 정면도.
제5도는 본 발명에 관한 모떼기 방법을 표시한 설명도.
제6도는 본 발명에 관한 웨이퍼 모떼기 방법의 숫돌립자 운동 방향을 표시한 설명도.
제7도는 본 발명에 관한 웨이퍼 모떼기 방법의 숫돌립자 운동을 표시한 설명도.

Claims (4)

  1. 회전하는 반도체 웨이퍼의 주연에 회전하는 숫돌을 당접하여 반도체 웨이퍼의 주연을 연마하는 반도체 웨이퍼의 모떼기 방법에 있어서, 상기 숫돌의 회전축을 반도체 웨이퍼 외주의 접선 방향에 정사시켜 반도체 웨이퍼의 주연을 연마하는 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.
  2. 제1항에 있어서, 상기 숫돌은 홈을 가진 숫돌로써 형성되고, 숫돌의 연마면은 홈을 가진 숫돌의 홈 측부를 형성한 경사면과 축홈의 저면을 형성한 외주면으로 이루어진 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.
  3. 회전하는 반도체 웨이퍼의 주연에 회전하는 숫돌을 당접하여 반도체 웨이퍼의 주연을 연마하는 반도체 웨이퍼외주의 모떼기 방법에 있어서, 상기 반도체 웨이퍼의 회전축과 숫돌의 회전축을 평행으로 유지한 상태에서, 상기 숫돌의 경사진 숫돌면에 따라 왕복이동 시키면서 반도체 웨이퍼의 주연 끝단부를 연마하는 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.
  4. 제3항에 있어서, 상기 숫돌을 축방향에 따라 왕복이동시키면서 회전축과 평행한 숫돌의 주면에서 반도체 웨이퍼의 주연외주면을 연마하는 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920021023A 1991-11-28 1992-11-10 반도체 웨이퍼의 모떼기 방법 KR0185234B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP31475591A JP2876572B2 (ja) 1991-11-28 1991-11-28 半導体ウエハの面取方法
JP3-314755 1991-11-28
JP32914191A JPH05162054A (ja) 1991-12-12 1991-12-12 半導体ウエハの面取方法
JP3-329141 1991-12-12

Publications (2)

Publication Number Publication Date
KR930011127A true KR930011127A (ko) 1993-06-23
KR0185234B1 KR0185234B1 (ko) 1999-04-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920021023A KR0185234B1 (ko) 1991-11-28 1992-11-10 반도체 웨이퍼의 모떼기 방법

Country Status (4)

Country Link
US (1) US5295331A (ko)
EP (1) EP0544256B1 (ko)
KR (1) KR0185234B1 (ko)
DE (1) DE69208050T2 (ko)

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JPH07205001A (ja) * 1993-11-16 1995-08-08 Tokyo Seimitsu Co Ltd ウェーハ面取り機
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JP3010572B2 (ja) * 1994-09-29 2000-02-21 株式会社東京精密 ウェーハエッジの加工装置
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DE19636055A1 (de) * 1996-09-05 1998-03-12 Wacker Siltronic Halbleitermat Verfahren zur materialabtragenden Bearbeitung der Kante einer Halbleiterscheibe
JPH10249689A (ja) * 1997-03-10 1998-09-22 Tokyo Seimitsu Co Ltd ウェーハ面取方法及び装置
JPH11320363A (ja) * 1998-05-18 1999-11-24 Tokyo Seimitsu Co Ltd ウェーハ面取り装置
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JP3303294B2 (ja) * 1999-06-11 2002-07-15 株式会社東京精密 半導体保護テープの切断方法
US6325704B1 (en) 1999-06-14 2001-12-04 Corning Incorporated Method for finishing edges of glass sheets
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MY127032A (en) * 1999-12-28 2006-11-30 Hitachi Metals Ltd Work chamfering apparatus and work chamfering method
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US8721392B2 (en) * 2011-06-28 2014-05-13 Corning Incorporated Glass edge finishing method
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Also Published As

Publication number Publication date
DE69208050T2 (de) 1996-05-30
EP0544256B1 (en) 1996-01-31
US5295331A (en) 1994-03-22
EP0544256A1 (en) 1993-06-02
KR0185234B1 (ko) 1999-04-15
DE69208050D1 (de) 1996-03-14

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