KR930011127A - 반도체 웨이퍼의 모떼기 방법 - Google Patents
반도체 웨이퍼의 모떼기 방법 Download PDFInfo
- Publication number
- KR930011127A KR930011127A KR1019920021023A KR920021023A KR930011127A KR 930011127 A KR930011127 A KR 930011127A KR 1019920021023 A KR1019920021023 A KR 1019920021023A KR 920021023 A KR920021023 A KR 920021023A KR 930011127 A KR930011127 A KR 930011127A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor wafer
- grindstone
- periphery
- rotating
- rotation axis
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 19
- 235000012431 wafers Nutrition 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 8
- 238000005498 polishing Methods 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 3
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
본 발명에서는 반도체 웨이퍼(20)의 회전축P-P에 대하여, 숫돌(22)의 회전축O-O는 반도체 웨이퍼(20)의 접선방향에만큼 경사져 있다.
따라서, 숫돌(22)의 숫돌립자 운동방향은 연삭방향분력 Al과 직각방향분력 A2에 나누어지고, 이들의 분력이 작용숫돌립자수를 증대시켜 모떼기 형상의 정밀도 및 면 정밀도 향상이 도모된다.
본 발명에서는 회전하는 숫돌(22)을 경사시켜 연삭면(24)에 따라 왕복이동시키면서 회전하는 반도체 웨이퍼의 주연을 모떼기 가공하므로, 숫돌의 작용숫돌립자수를 증대시켜 모떼기 형상의 정밀도 및 면거칠기 향상이 도모된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 가공방법을 표시한 정면도.
제5도는 본 발명에 관한 모떼기 방법을 표시한 설명도.
제6도는 본 발명에 관한 웨이퍼 모떼기 방법의 숫돌립자 운동 방향을 표시한 설명도.
제7도는 본 발명에 관한 웨이퍼 모떼기 방법의 숫돌립자 운동을 표시한 설명도.
Claims (4)
- 회전하는 반도체 웨이퍼의 주연에 회전하는 숫돌을 당접하여 반도체 웨이퍼의 주연을 연마하는 반도체 웨이퍼의 모떼기 방법에 있어서, 상기 숫돌의 회전축을 반도체 웨이퍼 외주의 접선 방향에 정사시켜 반도체 웨이퍼의 주연을 연마하는 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.
- 제1항에 있어서, 상기 숫돌은 홈을 가진 숫돌로써 형성되고, 숫돌의 연마면은 홈을 가진 숫돌의 홈 측부를 형성한 경사면과 축홈의 저면을 형성한 외주면으로 이루어진 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.
- 회전하는 반도체 웨이퍼의 주연에 회전하는 숫돌을 당접하여 반도체 웨이퍼의 주연을 연마하는 반도체 웨이퍼외주의 모떼기 방법에 있어서, 상기 반도체 웨이퍼의 회전축과 숫돌의 회전축을 평행으로 유지한 상태에서, 상기 숫돌의 경사진 숫돌면에 따라 왕복이동 시키면서 반도체 웨이퍼의 주연 끝단부를 연마하는 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.
- 제3항에 있어서, 상기 숫돌을 축방향에 따라 왕복이동시키면서 회전축과 평행한 숫돌의 주면에서 반도체 웨이퍼의 주연외주면을 연마하는 것을 특징으로 하는 반도체 웨이퍼의 모떼기 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31475591A JP2876572B2 (ja) | 1991-11-28 | 1991-11-28 | 半導体ウエハの面取方法 |
JP3-314755 | 1991-11-28 | ||
JP32914191A JPH05162054A (ja) | 1991-12-12 | 1991-12-12 | 半導体ウエハの面取方法 |
JP3-329141 | 1991-12-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930011127A true KR930011127A (ko) | 1993-06-23 |
KR0185234B1 KR0185234B1 (ko) | 1999-04-15 |
Family
ID=26568063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920021023A KR0185234B1 (ko) | 1991-11-28 | 1992-11-10 | 반도체 웨이퍼의 모떼기 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5295331A (ko) |
EP (1) | EP0544256B1 (ko) |
KR (1) | KR0185234B1 (ko) |
DE (1) | DE69208050T2 (ko) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07205001A (ja) * | 1993-11-16 | 1995-08-08 | Tokyo Seimitsu Co Ltd | ウェーハ面取り機 |
JPH07323420A (ja) * | 1994-06-02 | 1995-12-12 | Tokyo Seimitsu Co Ltd | ウェーハ製造方法及びその装置 |
JPH081493A (ja) * | 1994-06-17 | 1996-01-09 | Shin Etsu Handotai Co Ltd | ウェーハ面取部の鏡面研磨方法および鏡面研磨装置 |
JP3010572B2 (ja) * | 1994-09-29 | 2000-02-21 | 株式会社東京精密 | ウェーハエッジの加工装置 |
US5668045A (en) * | 1994-11-30 | 1997-09-16 | Sibond, L.L.C. | Process for stripping outer edge of BESOI wafers |
JPH08243891A (ja) * | 1995-03-07 | 1996-09-24 | Kao Corp | 基板のチャンファ加工装置 |
US5494849A (en) * | 1995-03-23 | 1996-02-27 | Si Bond L.L.C. | Single-etch stop process for the manufacture of silicon-on-insulator substrates |
US5937312A (en) * | 1995-03-23 | 1999-08-10 | Sibond L.L.C. | Single-etch stop process for the manufacture of silicon-on-insulator wafers |
TW308561B (ko) * | 1995-08-24 | 1997-06-21 | Mutsubishi Gum Kk | |
ATE214321T1 (de) * | 1996-06-15 | 2002-03-15 | Unova Uk Ltd | Verfahren zum schleifen von kanten |
JP3620679B2 (ja) * | 1996-08-27 | 2005-02-16 | 信越半導体株式会社 | 遊離砥粒によるウエーハの面取装置及び面取方法 |
DE19636055A1 (de) * | 1996-09-05 | 1998-03-12 | Wacker Siltronic Halbleitermat | Verfahren zur materialabtragenden Bearbeitung der Kante einer Halbleiterscheibe |
JPH10249689A (ja) * | 1997-03-10 | 1998-09-22 | Tokyo Seimitsu Co Ltd | ウェーハ面取方法及び装置 |
JPH11320363A (ja) * | 1998-05-18 | 1999-11-24 | Tokyo Seimitsu Co Ltd | ウェーハ面取り装置 |
EP1043120A1 (en) * | 1999-03-31 | 2000-10-11 | Nippei Toyama Corporation | Method and apparatus for grinding a workpiece |
JP3303294B2 (ja) * | 1999-06-11 | 2002-07-15 | 株式会社東京精密 | 半導体保護テープの切断方法 |
US6325704B1 (en) | 1999-06-14 | 2001-12-04 | Corning Incorporated | Method for finishing edges of glass sheets |
US6267649B1 (en) * | 1999-08-23 | 2001-07-31 | Industrial Technology Research Institute | Edge and bevel CMP of copper wafer |
MY127032A (en) * | 1999-12-28 | 2006-11-30 | Hitachi Metals Ltd | Work chamfering apparatus and work chamfering method |
US6361405B1 (en) * | 2000-04-06 | 2002-03-26 | Applied Materials, Inc. | Utility wafer for chemical mechanical polishing |
JP2002036079A (ja) * | 2000-07-26 | 2002-02-05 | Speedfam Co Ltd | 被研磨物の研磨方法及び研磨装置 |
KR100490684B1 (ko) * | 2000-08-18 | 2005-05-19 | 도쿄 세이미츄 코퍼레이션 리미티드 | 박판의 주변 연마 장치 |
JP4748968B2 (ja) * | 2004-10-27 | 2011-08-17 | 信越半導体株式会社 | 半導体ウエーハの製造方法 |
US7140953B1 (en) * | 2005-06-30 | 2006-11-28 | Bromer Inc. | Apparatus for treating edges of panels and method |
US8721392B2 (en) * | 2011-06-28 | 2014-05-13 | Corning Incorporated | Glass edge finishing method |
US9676114B2 (en) * | 2012-02-29 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer edge trim blade with slots |
US9028296B2 (en) * | 2012-08-30 | 2015-05-12 | Corning Incorporated | Glass sheets and methods of shaping glass sheets |
JP6939752B2 (ja) * | 2018-11-19 | 2021-09-22 | 株式会社Sumco | シリコンウェーハのヘリカル面取り加工方法 |
CN110281101B (zh) * | 2019-07-23 | 2021-10-29 | 西安奕斯伟材料科技有限公司 | 一种边缘研磨装置及方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4344260A (en) * | 1979-07-13 | 1982-08-17 | Nagano Electronics Industrial Co., Ltd. | Method for precision shaping of wafer materials |
JPH0624199B2 (ja) * | 1982-07-30 | 1994-03-30 | 株式会社日立製作所 | ウエハの加工方法 |
DE3231895C2 (de) * | 1982-08-27 | 1985-05-15 | Benteler-Werke AG, 4790 Paderborn | Maschine zum Abfasen von Glasplattenkanten |
JPS59214554A (ja) * | 1983-05-17 | 1984-12-04 | Daiichi Seiki Kk | ウエハ−の面取り研削装置 |
US4638601A (en) * | 1985-11-04 | 1987-01-27 | Silicon Technology Corporation | Automatic edge grinder |
CH671116A5 (ko) * | 1986-10-13 | 1989-07-31 | Bbc Brown Boveri & Cie | |
DE3769909D1 (de) * | 1986-10-22 | 1991-06-13 | Bbc Brown Boveri & Cie | Verfahren zum anbringen einer umlaufenden hohlkehle am rand einer halbleiterscheibe eines leistungshalbleiter-bauelements. |
SU1542785A1 (ru) * | 1987-10-08 | 1990-02-15 | Симферопольский филиал Днепропетровского инженерно-строительного института | Способ обработки кромок пластин шлифовальным кругом с профильной заточкой |
EP0329087B1 (en) * | 1988-02-15 | 1994-11-17 | Tokyo Seimitsu Co.,Ltd. | Method and device for dressing an inner peripheral blade in a slicing machine |
-
1992
- 1992-11-10 KR KR1019920021023A patent/KR0185234B1/ko not_active IP Right Cessation
- 1992-11-18 US US07/977,889 patent/US5295331A/en not_active Expired - Lifetime
- 1992-11-25 DE DE69208050T patent/DE69208050T2/de not_active Expired - Fee Related
- 1992-11-25 EP EP92120089A patent/EP0544256B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69208050T2 (de) | 1996-05-30 |
EP0544256B1 (en) | 1996-01-31 |
US5295331A (en) | 1994-03-22 |
EP0544256A1 (en) | 1993-06-02 |
KR0185234B1 (ko) | 1999-04-15 |
DE69208050D1 (de) | 1996-03-14 |
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