KR920700766A - 새로운 지올라이트 ssz-31 - Google Patents

새로운 지올라이트 ssz-31

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Publication number
KR920700766A
KR920700766A KR1019910701168A KR910701168A KR920700766A KR 920700766 A KR920700766 A KR 920700766A KR 1019910701168 A KR1019910701168 A KR 1019910701168A KR 910701168 A KR910701168 A KR 910701168A KR 920700766 A KR920700766 A KR 920700766A
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South Korea
Prior art keywords
zeolite
oxide
compound
conditions
quaternary ammonium
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KR1019910701168A
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English (en)
Inventor
아이. 죤스 스테시
브이. 헤러스 토마스
레이니스 앤드류
에스. 센틸리 도날드
Original Assignee
원본미기재
셰브런 리써치 앤드 테크놀로지 캄파니
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Publication of KR920700766A publication Critical patent/KR920700766A/ko

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Abstract

내용 없음

Description

새로운 지올라이트 SSZ-31
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (55)

  1. 산화실리콘, 산화게르마늄 및 이들의 혼합물중에서 선택된 산화물대 산화알루미늄, 산화칼륨, 산화철 및 이들의 혼합물중에서 선택된 산화물의 몰비가 약 50 : 1이상이고 표 1의 X-레이 회절선을 지니는 지올라이트.
  2. 산화실리콘, 산화게르마늄 및 이들의 혼합물중에서 선택된 산화물대 산화붕소 또는 산화알루미늄, 산화칼륨, 및 산화철과 산화붕소의 혼합물중에서 선택된 산화물의 몰비가 50:1이상이고 표1의 X레이 회절선을 지니는 지올라이트.
  3. 산화실리콘, 산화게르마늄 및 이들의 혼합물중에서 선택된 산화물대 산화붕소 또는 산화알루미늄과 산화붕소의 혼합물중에서 선택된 산화물의 몰비가 50 : 1이상이고 표1의 X레이 회절선을 지니는 지올라이트.
  4. 실화실리콘 대 산화붕소의 몰비가 50 : 1이상이고 표1의 X레이 회절선을 지니는 지올라이트.
  5. 실화실리콘 대 산화알루미늄의 몰비가 50 : 1이상이고 표1의 X레이 회절선을 지니는 지올라이트.
  6. 합성된 무수상태의 것으로서 산화물의 몰비가 하기와 같은 조성을 지니고 표1의 X레이 회절선을 지니는 지올라이트 : (0.1내지 10)Q2O(0.1 내지 5.0)M2O : W2O3(50이상)YO2상기식에서, M은 알칼리 금속양이온이고, W는붕소이고, Y는 실리콘, 게르마늄 및 이들의 혼합물 중에서 선택되고 Q는 4차 암모늄이온이다.
  7. 제6항의 지올라이트를 약200℃내지 820℃의 온도에서 열적으로 처리함으로써 제조되는 지올라이트.
  8. 제6항에 있어서, 4차 암모늄이온이 하기 구조식이 화합물에서 유도되는 지올라이트:
  9. 제6항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물중에서 유도되는 지올라이트:
  10. 제6항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물에서 유도되는 지올라이트:
  11. 제6항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물에서 유도되는 지올라이트:
  12. 제6항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물에서 유도되는 지올라이트:
  13. 제1항, 제2항 또는 제3항에 있어서, 이온교환을 수소, 앞모늄, 히토류금속, ⅡA조 금속 또는 VⅢ족 금속이온으로 수행한 지올라이트.
  14. 제1항, 제2항 또는 제3항에 있어서, 히토류금속, ⅡA족 금속 또는 VⅢ족 금속이 지올라이트 내에 흡착되는 지올라이트.
  15. 제1항, 제2항 또는 제3항의 지올라이트 및 무기메티릭스를 함유하는 지올라이트 조성물.
  16. (a)4차 암모늄이온의 공급원, 붕소실리케이트 형태의 산하붕소중에서 선택된 산화물, 및 산화실리콘, 산화게르마늄 및 이들의 혼합물중에서 선택된 산화물을 함유하는 수성 혼합물을 제조하고, (b)혼합물을 최소한 140℃의 온도에서 유지하여 지올라이트의 결정을 생성시키고, (c)상기 결정을 회수함을 특징으로 하여 제2항의 지올라이트를 제조하는 방법.
  17. 제16항에 있어서, 붕소실리케이트가 붕소실리케이트 유리 또는 붕소베타지올라이트인 방법.
  18. 제16항에 있어서, 수성 혼합물이 산화물의 몰비가 하기 범위에 해당하는 조성을 지니는 방법: 50이상의 YO2/W2O3: 0.05 : 1 내지 0.50 : 1의 Q/YO2상기식에서, Y는 실리콘, 게르마늄 및 이들의 혼합물중에서 선택되고, W는 붕소이고,ㅇ Q는 4차 암모늄 화합물이다.
  19. 제16항 또는 제17항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물중에서 유도되는 방법.
  20. 제16항 또는 17항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물에서 유도 되는 방법.
  21. 제16항 또는 제17항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물에서 유도되는 방법.
  22. 제16항 또는 17항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물에서 유도되는 방법.
  23. 제16항 또는 제17항에 있어서, 4차 암모늄이온이 하기 구조식의 화합물에서 유도되는 방법.
  24. 제7항의 붕소 함유 지올라이트를 ⅢA족 금속 또는 전이금속의 수용액과 접촉시킴을 특징으로 하여 상기 지올라이트내의 붕소를 치환시키는 방법.
  25. 하기 구조식의 화합물.
  26. 하기 구조식의 화합물.
  27. 하기 구조식의 화합물.
  28. 탄화수소성 원료를 탄화수소 전화 조건에서 제1항의 지올라이트와 접촉시킴을 특징으로 하여 탄화수소를 전화시키는 방법.
  29. 제28항에 있어서, 탄화수소 공급원료를 수소화 크래킹 조건하에서 제1항의 지올라이트와 접촉시킴을 특징으로 하는 수소화 크래킹 방법.
  30. 제28항에 있어서, (a)약 40℃이상 내지 약 200℃미만의 비점 범위를 지니는 직쇄 및 약간 측쇄의 탄화수소를 함유하는 탄화수소성 공급원료를 방향족 전화 조건하에서 산성이 거의 없는 제1항의 지올라이트와 접촉시키고, (b)고옥탄가의 유출물을 회수함을 특징으로 하여 증가된 방향족 함량을 지니는 고옥탄가 생성물을 제조하는 방법.
  31. 제30항에 있어서, 지올라이트가 Ⅷ족 금속성분을 함유하는 방법.
  32. 제28항에 있어서, 탄화수소성 공급원료를 수소화탈납조건하에서 제1항의 지올라이트와 접촉시킴을 특징으로 하는 수소화 탈납방법.
  33. 제28항에 있어서, 반응죤에 있는 탄화수소 공급원료를 접촉크래킹 조건하에서 가한 수소의 부존재하에서 제1항의 지올라이트로 이루어진 촉매와 접촉시키는 단계를 포함하는 접촉 크래킹방법.
  34. 제33항에 있어서, 반응죤에 있는 탄화수소 공급원료를 접촉 크래킹 조건하에서 가한 수소의 부존재하에서 제1항의 지올라이트 성분 및 거대 세공 크기의 결정성 알루미노 실리케이트 크래킹 성분을 함유하는 촉매조성물과 접촉시키는 단계를 포함하는 접촉 크래킹방법.
  35. 제34항에 있어서, 제1항의 지올라이트 성분 및 거대 세공크기의 결정성 알루미노 실리케이트 크래킹성분을 함유하는 촉매조성물을 사용하는 방법.
  36. 제35항에 있어서, 결정성 알루미노 실리케이트 크래킹 성분이 7.0Å 이상의 세공크기를 지니는 방법.
  37. 제34항에 있어서, 촉매조성물이 2성분의 물리적 화합물을 함유하는 방법.
  38. 제34항에 있어서, 성분중 하나가 실리카, 알루미나, 무정형 실리카-알루미나, 실리카-마그네시아, 실리카-지르코니아, 알루미나-보리아 및 알루미나-티타네이트와 같은 합성점토, 카올린 할로이사이트, 몬트모릴로나이트, 아타플가이트, 세피올라이트 및 사포나이트와 같은 천연점토, 산활성화된 점토, 기둥모양으로 되거나(pillared)가교된 점토 및 이들의 혼합물중에 혼입된 제1항의 지올라이트인 방법.
  39. 제34항에 있어서, 2개의 촉매성분이 제35항의 무기 산화물로 이루어진 무기메트릭스 내에 혼입되는 방법.
  40. 제28항에 있어서,최소한 하나의 Ⅷ족 금속 및 제1항의 지올라이트로 이루어진 촉매를 이성화 조건하에서 직쇄 및 약간 측쇄의 C4내지 C7탄화수소를 함유하는 원료와 접촉시킴을 특징으로 하여 C4내지 C7탄화수소를 이성화시키는 방법.
  41. 제40항에 있어서, Ⅷ족 금속의 함침후 촉매를 스팀/공기 혼합물중에서 승온하에 하소시키는 방법.
  42. 제40항에 있어서, Ⅷ족 금속이 백금인 방법.
  43. 제28항에 있어서, 최소한 1몰 과량의 방향족 탄화수소를 알칼리화 조건에서 최소한 부분액체상 조건하및 제1항에 따르는 지올라이트의 존재하에서 C2내지 C20올레핀과 접촉시킴을 특징으로 하여 방향족 탄화수소를 알킬화시키는 방법.
  44. 제43항에 있어서, 방향족 탄화수소 및 올레핀이 각각 약 4 : 1 내지 20 : 1의 몰비로 존재하는 방법.
  45. 제43항에 있어서, 방향족 탄화수소가 벤젠, 톨루엔 및 크실렌 또는 이들의 혼합물로 이루어진 그룹중에서 선탠된 성분인 방법.
  46. 제28항에 있어서, 방향족 탄화수소를 트랜스 알킬화 조건에서 최소한 부분 액체상 조건하 및 제1항에 따르는 지올라이트의 존재하에서 폴리알킬 방향족 탄화수소와 접촉시킴을 특징으로 하여 방향족 탄화수소를 트랜스 알킬화 시키는 방법.
  47. 제46항에 있어서, 방향족 탄화수소를 및 폴리알킬방향족 탄화수소가 각각 약1 : 1내지 약 25 : 1의 몰비로 존재하는 방법.
  48. 제46항에 있어서, 방향족 탄화수소가 벤젠, 톨루엔 및 크실렌 또는 이들의 혼합물로 이루어진 그룹중에서 선택된 성분인 방법.
  49. 제46항에 있어서, 폴리알킬 방향족 탄화수소가 디알킬 벤젠인 방법.
  50. 제28항에 있어서, 올레핀 원료를 올리고머화 조건하에서 제1항의 지올라이트와 접촉시킴을 특징으로 하는 올리고머화 방법.
  51. 제28항에 있어서, 탄화수소성 공급원료를 접촉 개질 조건하에서 제1항의 지올라이트와 접촉시킴을 특징으로 하는 접촉개질 방법.
  52. 제28항에 있어서, (a)비등점 범위가 약40℃이상 내지 약 200℃미만인 직쇄 및 약간 측쇄의 탄화수소를 함유하는 탄화수소성 원료를 방향족 전화조건하에서 산성이 거의 없는 제1항의 지올라이트와 접촉시키고, (b)방향족 함유 유출물을 회수함을 특징으로 하여 방향족 함량이 증가된 생성물을 제조하는 방법.
  53. 제28항에 있어서, 알콜을 전화조건하에서 제1항의 지올라이트와 접촉시킴을 특징으로 하여 탄소수 1내지 8개의 저급 지방족 알콜을 접촉 전화시켜 가솔린 비등점 범위의 탄화수소를 생성시키는 방법.
  54. 제52항에 있어서, 알콜이 메탄올인 방법.
  55. 제28항에 있어서, 공급원료를 방향족 전화 조건하에서 제1항의 지올라이트와 접촉시킴을 특징으로 하여 C2내지 C6올레핀 또는 파라딘 원료기류를 방향족 화합물로 전화시키는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910701168A 1990-01-26 1991-01-28 새로운 지올라이트 ssz-31 KR920700766A (ko)

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US07/471,158 US5106801A (en) 1988-10-20 1990-01-26 Zeolite SSZ-31
US471158 1990-01-26
PCT/US1991/000589 WO1991011258A1 (en) 1990-01-26 1991-01-28 New zeolite ssz-31

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AU7323391A (en) 1991-08-21
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EP0465642A1 (en) 1992-01-15
EP0465642A4 (en) 1992-11-25

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