KR920018511A - 액정전기 광학장치 - Google Patents

액정전기 광학장치 Download PDF

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KR920018511A
KR920018511A KR1019920004132A KR920004132A KR920018511A KR 920018511 A KR920018511 A KR 920018511A KR 1019920004132 A KR1019920004132 A KR 1019920004132A KR 920004132 A KR920004132 A KR 920004132A KR 920018511 A KR920018511 A KR 920018511A
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South Korea
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thin film
channel
film transistors
liquid crystal
optical device
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KR1019920004132A
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KR0133845B1 (ko
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아키라 마세
마사아키 히로키
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야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 겐큐쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

액정전기 광학장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구성을 2×2 매트릭스로 편성한 경우의 설명도,
제2도는 본 발명을 사용하지 않는 종래의 예시도,
제3도는 본 발명 실시예의 일례도.

Claims (9)

  1. 기판상에 매트릭스 구성을 갖는 복수의 화소가 설치된 액정전기 광학장치로, 각각의 화소전극에 P채널형 박막트랜지스터와 N채널형 박막트랜지스터와를 상보형으로 구성한 상보형 박막트랜지스터를 복수로 설치하고, 그 복수의 상보형 박막트랜지스터의 입출력단을 직렬로 접속하고, 이 입출력단의 한쪽을 상기 화소전극으로, 다른 한쪽을 제1신호선에 접속하고, 동시에 상기 복수의 상보형 박막 트랜지스터의 모든 게이트전극을 제2신호선에 접속한 것을 특징으로 하는 액정전기 광학전기.
  2. 기판상에 매트릭스 구성을 갖는 복수의 화소가 설치된 액정전기 광학장치로, 각각의 화소전극에 복수의 P채널형 박막트랜지스터와 복수의 N채널형 박막트랜지스터를 갖고, 상기 복수의 P채널형 박막트랜지스터의 입출력단을 직렬로 접속하고, 이 입출력단의 한쪽을 상기 화소전극에, 다른 한쪽을 제1신호선에 접속하고, 상기 복수의 N채널형 박막트랜지스터의 입출력단을 직렬로 접속하고, 이 입출력단의 한쪽을 상기 화소전극에, 다른 한쪽을 같은 제1신호선에 접속하고, 상기 박막트랜지스터의 모든 게이트 전극을 동일한 제2신호선에 접속한 것을 특징으로 하는 액정전기 광학장치.
  3. 제1항에 있어서 복수의 상보형 박막트랜지스터 가운데 적어도 1조는 나머지 상보형 박막트랜지스터가 동작불량시 보상하는 기능을 갖는 점을 특징으로 하는 액정정기 광학장치.
  4. 제2항에 있어서, 복수의 P채널형 박막트랜지스터 가운데 적어도 일부는 나머지 박막트랜지스터가 동작불량시 보상하는 기능을 갖는 점을 특징으로 하는 액정전기 광학장치.
  5. 제2항에 있어서, 복수의 N채널형 박막트랜지스터 가운데 적어도 일부는 나머지 박막트랜지스터가 동작불량시 보상하는 기능을 갖는 점을 특징으로 하는 액정전기 광학장치.
  6. 한쌍의 기판과, 상기 한쌍의 기판들 사이에 구비된 전기광학적 영향이 미치는 수단과, 상기 기판들 중 한 내부표면상에 다수의 화소전극들이 형성되어 상기 화소전극에 전압을 인가하기 위한 스윗칭수단으로 구비되는 각각의 상기 화소전극과, 다른 기판상에 형성된 역전극과, 상기 화소전극들이 형성된 기판상에 제공된 다수의 신호선 및 다수의 데이터선으로 이루어져 상기 스윗칭수단이 직렬로 상응화소전극 및 데이터선과 접속된 두 개의 상보형 P채널 및 N채널 트랜지스터로 이루어짐을 특징으로 하는 액정전기 광학장치.
  7. 제6항에 있어서, 상기 전기광학적 영향이 미치는 수단이 액정층임을 특징으로 하는 액정전기 광학장치.
  8. 제6항에 있어서, 상기 두 개의 상보형 P채널 및 N채널 트랜지스터 쌍들의 모든 게이트 전극들이 상기 신호선중 상응하는 하나와 접속됨을 특징으로 하는 액정전기 광학장치.
  9. 제6항에 있어서, 상기 스윗칭수단이 직렬로 상기 두 개의 P채널 및 N채널 트랜지스터 쌍과 접속된 다른 상보형 P채널 및 N채널 트랜지스터 쌍으로 이루어짐을 특징으로 하는 액정전기 광학장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920004132A 1991-03-15 1992-03-13 반도체장치와 그를 사용한 전기광학장치 KR0133845B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7678591A JP2873632B2 (ja) 1991-03-15 1991-03-15 半導体装置
JP91-76785 1991-03-15

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KR920018511A true KR920018511A (ko) 1992-10-22
KR0133845B1 KR0133845B1 (ko) 1998-04-22

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US6236064B1 (en) 2001-05-22
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JPH0627484A (ja) 1994-02-04
US5642213A (en) 1997-06-24

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