KR920010532A - 전기 광학 장치와 그 구동방법 - Google Patents
전기 광학 장치와 그 구동방법 Download PDFInfo
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- KR920010532A KR920010532A KR1019910009128A KR910009128A KR920010532A KR 920010532 A KR920010532 A KR 920010532A KR 1019910009128 A KR1019910009128 A KR 1019910009128A KR 910009128 A KR910009128 A KR 910009128A KR 920010532 A KR920010532 A KR 920010532A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
- G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
- G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/30—Gray scale
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0823—Several active elements per pixel in active matrix panels used to establish symmetry in driving, e.g. with polarity inversion
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2011—Display of intermediate tones by amplitude modulation
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- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
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Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 제1실시형태에 다른 액정디스플레이의 등가회로를 보인 개략도,
제4a도 ∼ 제4c도는 제3도에서 보인 액정디스플레이를 보인 동작 설명도,
제5a도와 제5b도는 제1실시형태에 따른 액정디스플레이의 동작 설명도.
Claims (15)
- 광감응층, 상기 층내 픽셀을 제한하도록 상기 층의 한측면에서 상기층과 인접하게 위치한 전극, 자체 소오스 터미날말에서 상기 전극에 연결된 n-채널 전계효과 트랜지스터, 자체 소오스 터미널에서 상기 전극에 연결된 p ―채널 전계효과 트랜지스터, 상기 n ―채널 전계교화 트랜지스터의 드레인 터미널에 연결된 제1제어라인, 상기 p-채널 전계효과 트랜지스터의 드레인 터미날에 연결된 제2제어라인, 상기 n-채널 전계효과 트랜지스터와 상기 p ―채널 전계효과 트랜지스터의 게이트 터미널에 연결된 제3제어라인과 상기 제1, 제2, 제3제어라인에 제어신호를 공급하기 위한 제어회로로 구성됨을 특징으로 하는 전기 광학 장치.
- 제1항에 있어서, 상기 층이 액정층임을 특징으로 하는 전기 광학 장치.
- 제1항에 있어서, 상기 전극은 매트릭스로 배열된 다수의 독립된 패드 형태 즉 하나의 독립된 픽셀을 제한하는 각 패드가 구비됨을 특징으로 하는 전기 광학 장치.
- 제1항에 있어서, 상기 층에 대하여 상기 배면전극과 상기 전극 패드 사이에 전압을 공급하도록 하기위해 상기 층의 다른 측면에서 상기 층과 인접한 배면전극을 더 구성함을 특징으로 하는 전기 광학 장치.
- 제1항에 있어서, 상기 전기 광학 장치가 디스플레이임을 특징으로 하는 장치.
- 광감응층, 상기 층내 픽셀을 제한하도록 상기 층의 한 측면에서 상기 층과 인접하게 위치된 전극패드, 자체 소오스 터미날에서 상기 전극 패드와 연결된 n-채널 전계효과 트랜지스터, 자체 소오스 터미날에서 상기 전극 패드와 연결된 p-채널 전계효과 트랜지스터, 상기 n-채널 전계효과 트랜지스터의 드레인 터미날과 연결된 제1제어라인, 상기 p-채널 전계효과 트랜지스터의 드레인 터미날과 연결된 제2제어라인, 상기 n-채널 전계효과 트랜지스터와 상기 p-채널 전계효과 트랜지스터의 게이트 터미날과 연결된 제3제어라인과 상기 제1, 제2, 제3제어라인에 제어 신호를 공급하기 위한 제어회로로 구성된 전기 광학 장치에 있어서, 상기 제1제어라인을 통하여 상기 n-채널 전계효과 트랜지스터의 드레인 터미날에 제1전압레벨을 공급하고, 상기 제2제어라인을 통하여 상기 p-채널 전계효과 트랜지스터의 드레인 터미날에 제2전압을 공급하며 상기 제2전압 레벨이 상기 제1전압 레벨보다 낮고, 상기 n-채널 전계효과 트랜지스터와 상기 p-채널 전계효과 트랜지스터의 게이트 터미날에 제3전압레벨을 공급하며 상기 p-채널 트랜지스터 한계전압의 공제를 갖는 상기 제2전압 레벨과 상기 n-채널 트랜지스터의 한계전압의 부가를 갖게되는 상기 제1전압 레벨의 단계로 구성됨을 특징으로 하는 상기 전기 광학 장치의 구동방법.
- 제6항에 있어서, 상기 제1전압레벨이 접지레벨에 관하여 양극임을 특징으로 하는 방법.
- 제6항에 있어서, 상기 제2전압레벨이 접지레벨에 관하여 음극임을 특징으로 하는 방법.
- 제6항에 있어서, 상기 전극이 매트릭스에 배열된 다수의 각각 패드들의 형태로 구비되고, 상기 n-채널 전계효과 트랜지스터와 상기 p-채널 전계효과 트랜지스터가 각 패드에 대하여 하나의 쌍을 하나하나로 구비하고, 상기 제1과 제2제어라인은 각 열에 대하여 하나의 쌍을 하나하나 구비하고, 상기 제3제어라인은 각행에 대하여 하나를 하나하나 구비하고, 상기 전기 광학 장치의 구동중 하나의 열은 상기 제1제어라인을 통해 상기 n-채널 전계효과 트랜지스터의 드레인 터미날에 상기 제1전압 레벨의 공급과 어드레스된 열에 관하여 상기 제2제어라인을 통해 상기 p-채널 전계효과 트랜지스터의 드레인 터미날에 상기 제2전압 레벨의 공급에 의해 어드레스되고, 데이터 신호들이 선택된 픽셀의 상기 n-채널 전계효과 트랜지스터와의 상기 p-채널 전계효과 트랜지스터의 게이트 터미날들에 상기 제3전압 레벨의 공급에 의해 선택된 픽셀들을 작동시키도록 각행의 상기 제3제어라인에 공급됨을 특징으로 하는 방법.
- 제6항에 있어서, 상기 전극이 매트릭스에 배열된 다수의 각각 패드의 형태로 귀되고, 상기 n-채널 전계효과 트랜지스터와 상기 p-채널 전계효과 트랜지스터가 각 패드에 대해 한쌍을 개별적으로 구비하고, 상기 제1과 제2제어라인은 각 열에 대해 한쌍을 개별적으로 구비되고, 상기 제3제어라인이 각 행에 대하여 하나를 독단적으로 구비하고, 하나의 행이 상기 전기 광학 장치의 구동중 어드레스된 행의 상기 n-채널 전계효과 트랜지스터와 상기 p-채널 전계효과의 게이트 터미날에 상기 제3전압 레벨의 공급에 의해 어드레스되고, 데이터 신호들이 상기 제1제어라인을 통해 상기 n-채널 전계효과 트랜지스터의 드레인 터미날에 상기 제1전압 레벨의 공급과 선택된 픽셀에 관하여 상기 제2제어라인을 통해 상기 p-채널 전계효과 트랜지스터의 픽셀들을 작동시키도록 각 열의 제1과 제2제어라인에 공급된다.
- 제6항에 있어서, 상기 전기 광학 장치가 디스플레이 임을 특징으로 하는 방법.
- 광감응층, 상기 층에서 픽셀을 제한하도록 상기층의 한측면에서 상기 층과 인접하게 위치된 전극패드, 자체 소오스 터미날에서 상기 전극패드와 연결된 n-채널 전계효과 트랜지스터, 자체 소오스 터미날에서 상기 전극 패드와 연결된 p-채널 전계효과 트랜지스터, 상기 n-채널 전계효과 트랜지스터의 드레인 터미날과 연결된 제1제어라인, 상기 p-채널 전계효과 트랜지스터의 드레인 터미날과 연결된 제2제어라인, 상기 n-채널 전계효과 트랜지스터와 상기 p-채널 전계효과 트랜지스터의 게이트 터미날과 연결된 제3제어라인 상기 제1, 제2, 제3제어 라인에 제어신호를 공급하기 위한 제어회로로 구성된 전기 광학 장치에 있어서, 상기 제1제어라인을 통해 상기 n-채널 전계효과 트랜지스터의 드레인 터미날에 제1전압 레벨을 공급하고, 상기 제2제어라인을 통해 상기 p-채널 전계효과 트랜지스터의 드레인 터미날에서 제2전압레벨을 공급하고, 상기 n-채널 전계효과 트랜지스터와 상기 p-채널 전계효과 트랜지스터의 게이트터미날에 제3전압 레벨을 공급하는 단계로 구성됨을 특징으로 하는 상기 전기 광학 장치의 구동방법.
- 제12항에 있어서, 상기 제1전압레벨이 접지 레벨에 관하여 양극임을 특징으로 하는 방법.
- 제12항에 있어서, 상기 제2전압레벨이 접지 레벨에 관하여 음극임을 특징으로 하는 방법.
- 제12항에 있어서, 상기 전기 광학 장치가 디스플레이임을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP32369590A JP2742725B2 (ja) | 1990-11-26 | 1990-11-26 | 表示装置 |
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JP41572190A JP3270485B2 (ja) | 1990-12-10 | 1990-12-10 | 表示装置の駆動方法 |
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1994
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1997
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-
1998
- 1998-04-16 KR KR1019980013615A patent/KR100289755B1/ko not_active IP Right Cessation
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1999
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2005
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Publication number | Priority date | Publication date | Assignee | Title |
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KR100372304B1 (ko) * | 1995-01-27 | 2003-05-17 | 삼성전자주식회사 | 박막트랜지스터액정표시장치및그의제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US5905555A (en) | 1999-05-18 |
KR100522960B1 (ko) | 2005-10-24 |
KR100289755B1 (ko) | 2001-05-15 |
KR950001360B1 (ko) | 1995-02-17 |
KR100588597B1 (ko) | 2006-06-14 |
EP0488643A3 (en) | 1993-05-12 |
US5899547A (en) | 1999-05-04 |
US5612799A (en) | 1997-03-18 |
EP0488643A2 (en) | 1992-06-03 |
KR100537690B1 (ko) | 2005-12-20 |
US5946059A (en) | 1999-08-31 |
US5495353A (en) | 1996-02-27 |
KR20000050264A (ko) | 2000-08-05 |
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