KR920005329A - 반도체소자용 패턴의 형성 또는 시험방법 - Google Patents
반도체소자용 패턴의 형성 또는 시험방법 Download PDFInfo
- Publication number
- KR920005329A KR920005329A KR1019910013468A KR910013468A KR920005329A KR 920005329 A KR920005329 A KR 920005329A KR 1019910013468 A KR1019910013468 A KR 1019910013468A KR 910013468 A KR910013468 A KR 910013468A KR 920005329 A KR920005329 A KR 920005329A
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- formation
- test method
- semiconductor device
- temperature
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명방법이 적용되는 전자비임묘화장치의 개략을 나타낸 단면도
제2도는 본 발명방법이 적용되는 패턴위치정밀도검사장치의 주요부를 명확히
하는 단면도이다.
Claims (1)
- 반도체기판 또는 유리마스크(4)의 기판온도나 온도분포를 측정하여 일정한 온도나 온도분포에 이른 것을검지한 후에 노광공정 또는 검사 공정을 실시하는 것을 특징으로 하는 반도체소자용 패턴의 형성 또는 시험방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2214603A JP2907971B2 (ja) | 1990-08-14 | 1990-08-14 | 半導体素子用パターンの形成または試験方法 |
JP02-214603 | 1990-08-14 | ||
JP90-214603 | 1990-08-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920005329A true KR920005329A (ko) | 1992-03-28 |
KR960015517B1 KR960015517B1 (ko) | 1996-11-15 |
Family
ID=16658449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910013468A KR960015517B1 (ko) | 1990-08-14 | 1991-08-03 | 반도체소자용 패턴의 형성 또는 시험방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5217834A (ko) |
JP (1) | JP2907971B2 (ko) |
KR (1) | KR960015517B1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06188184A (ja) * | 1992-12-21 | 1994-07-08 | Nec Corp | レジスト膜の加熱方法およびパターン形成方法 |
US5581324A (en) * | 1993-06-10 | 1996-12-03 | Nikon Corporation | Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors |
JP2910716B2 (ja) * | 1997-01-16 | 1999-06-23 | 日本電気株式会社 | 光強度計算のパラメトリック解析方法 |
US5927512A (en) * | 1997-01-17 | 1999-07-27 | Micron Technology, Inc. | Method for sorting integrated circuit devices |
US6100486A (en) | 1998-08-13 | 2000-08-08 | Micron Technology, Inc. | Method for sorting integrated circuit devices |
US5844803A (en) * | 1997-02-17 | 1998-12-01 | Micron Technology, Inc. | Method of sorting a group of integrated circuit devices for those devices requiring special testing |
US5915231A (en) * | 1997-02-26 | 1999-06-22 | Micron Technology, Inc. | Method in an integrated circuit (IC) manufacturing process for identifying and redirecting IC's mis-processed during their manufacture |
US5856923A (en) | 1997-03-24 | 1999-01-05 | Micron Technology, Inc. | Method for continuous, non lot-based integrated circuit manufacturing |
JP2967755B2 (ja) * | 1997-04-17 | 1999-10-25 | 日本電気株式会社 | 半導体装置の製造方法 |
US5907492A (en) | 1997-06-06 | 1999-05-25 | Micron Technology, Inc. | Method for using data regarding manufacturing procedures integrated circuits (IC's) have undergone, such as repairs, to select procedures the IC's will undergo, such as additional repairs |
US7120513B1 (en) * | 1997-06-06 | 2006-10-10 | Micron Technology, Inc. | Method for using data regarding manufacturing procedures integrated circuits (ICS) have undergone, such as repairs, to select procedures the ICS will undergo, such as additional repairs |
US6049624A (en) * | 1998-02-20 | 2000-04-11 | Micron Technology, Inc. | Non-lot based method for assembling integrated circuit devices |
JP5167572B2 (ja) * | 2004-02-04 | 2013-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
JP5138968B2 (ja) * | 2007-04-11 | 2013-02-06 | 株式会社ニッケ機械製作所 | 良否判定装置 |
JP5356114B2 (ja) | 2009-05-29 | 2013-12-04 | 株式会社東芝 | 露光用マスク及び半導体装置の製造方法 |
JP2011119483A (ja) * | 2009-12-03 | 2011-06-16 | Canon Inc | 露光装置およびデバイス製造方法 |
JP2011129673A (ja) * | 2009-12-17 | 2011-06-30 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び基板配置室の温度調整方法 |
JP5674453B2 (ja) * | 2010-12-24 | 2015-02-25 | 株式会社ニッケ機械製作所 | 計測装置 |
WO2023131913A1 (en) * | 2022-01-10 | 2023-07-13 | Hydro Extrusion USA, LLC | System and method for automatic spray quenching |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3998639A (en) * | 1974-11-19 | 1976-12-21 | Bell Telephone Laboratories, Incorporated | Methods for determining feature-size accuracy of circuit patterns |
US4864356A (en) * | 1987-04-21 | 1989-09-05 | Brother Kogyo Kabushiki Kaisha | Exposure device for image recording apparatus |
JPH0274027A (ja) * | 1988-09-09 | 1990-03-14 | Jeol Ltd | パターン描画方法 |
JPH0276212A (ja) * | 1988-09-13 | 1990-03-15 | Canon Inc | 多重露光方法 |
JPH02134811A (ja) * | 1988-11-15 | 1990-05-23 | Nec Corp | パターン露光装置 |
US5044750A (en) * | 1990-08-13 | 1991-09-03 | National Semiconductor Corporation | Method for checking lithography critical dimensions |
-
1990
- 1990-08-14 JP JP2214603A patent/JP2907971B2/ja not_active Expired - Fee Related
-
1991
- 1991-08-03 KR KR1019910013468A patent/KR960015517B1/ko not_active IP Right Cessation
- 1991-08-13 US US07/744,517 patent/US5217834A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2907971B2 (ja) | 1999-06-21 |
US5217834A (en) | 1993-06-08 |
JPH0496314A (ja) | 1992-03-27 |
KR960015517B1 (ko) | 1996-11-15 |
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GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
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