KR920001685A - 반도체장치 및 그의 제조방법 - Google Patents

반도체장치 및 그의 제조방법 Download PDF

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Publication number
KR920001685A
KR920001685A KR1019910006314A KR910006314A KR920001685A KR 920001685 A KR920001685 A KR 920001685A KR 1019910006314 A KR1019910006314 A KR 1019910006314A KR 910006314 A KR910006314 A KR 910006314A KR 920001685 A KR920001685 A KR 920001685A
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KR
South Korea
Prior art keywords
layer
insulating film
metal wiring
conductive
silicon
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KR1019910006314A
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English (en)
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KR950000866B1 (ko
Inventor
고지 에구찌
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR920001685A publication Critical patent/KR920001685A/ko
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Publication of KR950000866B1 publication Critical patent/KR950000866B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/927—Electromigration resistant metallization

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체장치 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 실시예의 콘택트 구멍 근방의 구조를 표시하는 단면도.
제2도는 본 발명의 제2의 실시예의 콘택트 구멍 근방의 구조를 표시하는 단면도.
제3A도 내지 제3F도는 제1도에 표시한 제1의 실시예의 구조를 형성하는 제조공정의 1예를 순차표시하는 단면도.

Claims (2)

  1. 도전층과, 이 도전층 표면에 형성된 절연막과, 이 절연막상에 형성되어 또한 이 절연막의 소정위치에 형성된 콘택트 구멍에 있어서, 상기 도전층과 전기적으로 접속되는 도전성 금속배선층을 구비한 반도체장치에 있어서, 상기도전성 금속배선층과 상기 도전층의 표면과는 직접 접합되어 있고, 상기 도전성 금속배선층과 상기 절연막과의 사이에는 단결정체로 되는 또는 립경이 적어도 약 10㎛이상으로 대립경화한 다결정체로 되는 결정체 실리콘층을 개재하게 한 것을 특징으로 하는 반도체 장치
  2. 도전층 표면상에 절연막을 퇴적하게 하는 공정과, 이 절연막 표면상에 다결정 실리콘 또는 비결정질 실리콘으로되는 실리콘층을 형성하는 공정과, 상기 실리콘층 및 상기 절연층의 소정위치에 상기 도전층 표면이 노출하도록 콘택트 구멍을 형성하는 공정과, 상기 콘택트 구멍의 내부표면을 포함하고 상기 실리콘층 표면상에 도전성 금속배선층을 형성하는 공정과, 상기 도전성 금속배선층 및 상기 실리콘층을 필요에 따라 패터닝하는 공정과를 구비한 반도체장치의 제조 방법에 있어서, 상기 실리콘층을 형성하는 공정의 후 상기 도전성 금속 배선층을 형성하는 공정전의 소정의 시점에 있어 상기 실리콘층을 단결정화 또는 적어도 약 10㎛이사이의 립경을 가지도록 다결정화 하게 하기 위해서의 열처리 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910006314A 1990-06-26 1991-04-19 반도체장치 및 그의 제조방법 KR950000866B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-167282 1990-06-26
JP2167282A JPH0456325A (ja) 1990-06-26 1990-06-26 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR920001685A true KR920001685A (ko) 1992-01-30
KR950000866B1 KR950000866B1 (ko) 1995-02-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910006314A KR950000866B1 (ko) 1990-06-26 1991-04-19 반도체장치 및 그의 제조방법

Country Status (4)

Country Link
US (2) US5373192A (ko)
JP (1) JPH0456325A (ko)
KR (1) KR950000866B1 (ko)
DE (1) DE4119920C2 (ko)

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Also Published As

Publication number Publication date
KR950000866B1 (ko) 1995-02-02
DE4119920A1 (de) 1992-01-09
US5373192A (en) 1994-12-13
DE4119920C2 (de) 1996-04-25
JPH0456325A (ja) 1992-02-24
US5466638A (en) 1995-11-14

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