KR910016863A - 반도체 봉지용 수지 조성물 및 이 조성물을 사용하는 반도체 장치 - Google Patents

반도체 봉지용 수지 조성물 및 이 조성물을 사용하는 반도체 장치 Download PDF

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KR910016863A
KR910016863A KR1019910003589A KR910003589A KR910016863A KR 910016863 A KR910016863 A KR 910016863A KR 1019910003589 A KR1019910003589 A KR 1019910003589A KR 910003589 A KR910003589 A KR 910003589A KR 910016863 A KR910016863 A KR 910016863A
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히로요시 고가꾸
마사쓰구 오가다
마사노리 세가와
히로시 호오조오지
아끼오 니시가와
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미다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Abstract

내용 없음

Description

반도체 봉지용 수지 조성물 및 이 조성물을 사용하는 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
이하 본 도면을 간단히 설명한다. 제1도는 본 발명의 플라나형 트란지스터의 구조를 나타내는 단면도이고, 제2도는 직접 회로를 가지는 반도체 장치의 구조를 나타내는 다면도이고, 제3도는 반도체 메모리 소자의 단면 사시도이다.

Claims (7)

  1. (a) 일반식(Ⅰ)로 표시되는 에테르이미드제 화합물.
    (상기식에서, R1~R4, R7및 R8각각은 수소, 저급 알킬게, 저급 알콕시기, 저급 플루오로알킬기, 염소 또는 브롬에서 선택된 하나이고, 상호 같거나 상이하여도 되고, R5및 R6는 수소, 메틸기, 에틸기, 트리플루오로메틸기 또는 트리클로로메틸기에서 선택된 하나이고, 상호 같아도 상이하여도 되고, D는 에틸렌성 불포화 이중결합을 가지는 디카르본산 탄화수소 잔기이다.
    그 10배량의 물로 120℃에서 100시간 이상 추출한 추출액의 전기 전도도가 300Ms/cm 이하, pH가 1.5-7인 에테르아미드화합물, 및 (b) 에폭시수지로 되는 것을 특징으로 하는 반도체 봉지용 수지 조성물.
  2. (a) 일반식(Ⅰ)로 표시되는 에테르이미드제 화합물(식중에서, R1~R4, R7및 R8각각은 수소, 저급 알킬기, 저급 알콕시기, 저급 플루오로알킬기, 염소 또는 브롬에서 선택된 하나이고, 상호 같거나 상이하여도 되고, R5및 R6는 수소, 메틸기, 에틸기, 트리플루오로메틸기 또는 트리클로로메틸기에서 선택된 하나이고, 상호 같아도 상이하여도 되고, D는 에틸렌성, 불포화 이중결합을 가지는 디카르본산 탄화수소 잔기이고)을 그 10배량의 물로 120℃에서 100시간 이상 추출한 추출액의 전기 전도도가 300Ms/cm 이하, pH가 1.5-7인 에테르이미드 화합물, 및 (b) 에폭시수지, 및 (c) 페놀수지로 되는 것을 특징으로 하는 반도체 봉지용 수지 조성물.
  3. 제2항에 있어서, 페놀수지가 일반식(Ⅱ) 또는 일반식(Ⅲ)으로 표시되는 구조를 가지는 것을 특징으로 하는 수지 조성물;
    상기 식에서, R3은 수소 또는 -CH2OH를 표시하며, R10은 -CH2- 또는 -CH2-O-CH2-를 나타내며, R11는 각기 -CH2, -C(CH3)2-, 또는 -SO2-을 나타내며, 그리고 이들은 상호 같거나 또는 상이할 수 있으며, n은 적어도 1의 정수이다.
  4. (a) 일반식(Ⅰ)로 표시되는 순도 95% 이상의 에테르이미드계 화합물(상기 식에서, R1~R4, R7및 R8각각은 수소, 저급 알킬기, 저급 알콕시기, 저급 플루오로알킬기, 염소 또는 브롬에서 선택된 하나이고, 상호 같거나 상이하여도 되고, R5및 R6는 수소, 메틸기, 에틸기, 트리플루오로메틸기 또는 트리클로로메틸기에서 선택된 하나이고, 상호 같아도 상이하여도 되고, D는 에틸렌성 불포화 이중결합을 가지는 디카르본산 탄화수소 잔기이고,) 및 (b) 에폭시수지로 되는 것을 특징으로 하는 반도체 봉지용 수지 조성물.
  5. (a) 일반식(Ⅰ)로 표시되는 에테르이미드계 화합물(식중에서, R1~R4, R7및 R8각각은 수소, 저급 알킬기, 저급 알콕시기, 저급 플루오로알킬기, 염소 또는 브롬에서 선택된 하나이고, 상호 같거나 상이하여도 되고, R5및 R6는 수소, 메틸기, 에틸기, 트리플루오로메틸기 또는 트리클로로메틸기에서 선택된 하나이고, 상호 같아도 상이하여도 되고, D는 에틸렌성 불포화 이중결합을 가지는 디카르본산 탄화수소 잔기이고)을 그 10배량의 물로 120℃에서 100시간 이상 추출한 추출액의 전기 전도도가 300Ms/cm 이하, pH가 1.5-7인 에테르이미드화합물, 및 (b) 에폭시수지로 되는 수지 조성물로 반도체 소자의 적어도 일부가 피복 또는/및 봉지되어 있는 것을 특징으로 하는 반도체 장치.
  6. (a) 일반식(Ⅰ)로 표시되는 에테르이미드제 화합물(식중에서, R1~R4, R7및 R8각각은 수소, 저급 알킬기, 저급 알콕시기, 저급 플루오로알킬기, 염소 또는 브롬에서 선택된 하나이고, 상호 같거나 상이하여도 되고, R5및 R6는 수소, 메틸기, 에틸기, 트리플루오로메틸기 또는 트리클로로메틸기에서 선택된 하나이고, 상호 같아도 상이하여도 되고, D는 에틸렌성 불포화 이중결합을 가지는 디카르본산 탄화수소 잔기이고)을 그 10배량의 물로 120℃에서 100시간 이상 추출한 추출액의 전기 전도도가 300Ms/cm 이하, pH가 1.5-7인 에테르니미드화합물, (b) 에폭시수지, 및 (c) 페놀수지를 함유하는 수지조성물로, 반도체 소자의 적어도 일부가 피복 또는/및 봉지된 것을 특징으로 하는 반도체 장치.
  7. 제6항에 있어서, 페놀수지가 일반식(Ⅱ) 또는 (Ⅲ)(식중에서, R3는 H 또는 -CH2OH, R10은 -CH2- 또는 -CH2-O-CH2-를 나타내며, R11는 -CH2-, -C(CH3)2-, 또는 -SO2-을 각각 나타내며, 그리고 이들은 각기 같거나 또는 상이하며, n은 적어도 1의 정수를 나타낸다)으로 표시되는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910003589A 1990-03-09 1991-03-06 반도체 밀봉용 수지 조성물 및 이 조성물을 사용하는 반도체 장치 KR0175322B1 (ko)

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US5457154A (en) * 1991-01-21 1995-10-10 Mitsui Toatsu Chemicals, Inc. Bisimide compounds, polyimide resin composition prepared therefrom, and carbon fiber-reinforced polyimide resin composition
JP2927081B2 (ja) * 1991-10-30 1999-07-28 株式会社デンソー 樹脂封止型半導体装置
JP3424835B2 (ja) * 1991-12-27 2003-07-07 松下電器産業株式会社 カラー固体撮像装置およびカラーフィルタ
US5379187A (en) * 1993-03-25 1995-01-03 Vlsi Technology, Inc. Design for encapsulation of thermally enhanced integrated circuits
JP3362530B2 (ja) * 1993-12-16 2003-01-07 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
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US5659203A (en) * 1995-06-07 1997-08-19 International Business Machines Corporation Reworkable polymer chip encapsulant
US20060084741A1 (en) * 2004-10-19 2006-04-20 Sapna Blackburn Polyetherimide composition, film, process, and article

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US3568012A (en) * 1968-11-05 1971-03-02 Westinghouse Electric Corp A microminiature circuit device employing a low thermal expansion binder
JPS56109219A (en) * 1980-02-01 1981-08-29 Hitachi Ltd Epoxy resin composition
JPS6018145B2 (ja) * 1980-09-22 1985-05-09 株式会社日立製作所 樹脂封止型半導体装置
JPS58166747A (ja) * 1982-03-29 1983-10-01 Toshiba Corp 樹脂封止型半導体装置
JPS601846A (ja) * 1983-06-18 1985-01-08 Toshiba Corp 多層配線構造の半導体装置とその製造方法
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