KR910007107A - 퇴적막 형성법 - Google Patents

퇴적막 형성법 Download PDF

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Publication number
KR910007107A
KR910007107A KR1019900015300A KR900015300A KR910007107A KR 910007107 A KR910007107 A KR 910007107A KR 1019900015300 A KR1019900015300 A KR 1019900015300A KR 900015300 A KR900015300 A KR 900015300A KR 910007107 A KR910007107 A KR 910007107A
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South Korea
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aluminum
gas
silicon
deposition film
film formation
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KR1019900015300A
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KR940003098B1 (ko
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노부오 미꼬시바
가즈오 쯔보우찌
가즈야 마스
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야마지 게이조오
캐논 가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음

Description

퇴적막 형성법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실예에 관한 퇴적막형성장치를 도시한 모식도.

Claims (17)

  1. 플라즈마 CVD법을 이용하여 알루미늄막을 형성하는 퇴적막 형성법에 있어서, 전자공여성의 표면(A)과, 비전자공여성 표면(B)과를 가지는 기체를 이 기체에 향하여 단면적이 증대해가는 부분을 가지는 퇴적막 형성용 공간에 배치하고, 트리메틸알루미늄의 가스와 수소가스와를 상기 퇴적막 형성용의 공간내에 도입해서 상기 전자공여성의 표면(A)에 알루미늄막을 선택적으로 퇴적하는 것을 특징으로 하는 퇴적막 형성법.
  2. 제1항에 있어서, 상기 단면적이 증대해가는 부분에서, 상기 가스를 상기 공간내에 도입하는 것을 특징으로 하는 퇴적막 형성법.
  3. 제1항에 있어서, 상기 단면적이 증대해가는 부분은, 상기 기체에 대향해서 설치된 호온형상 부분인 것을 특징으로 하는 퇴적막 형성법.
  4. 제3항에 있어서, 상기 상기 호온형상은 원추형상 또는 각추형상인 것을 특징으로 하는 퇴적막 형성법.
  5. 제3항에 있어서, 상기 호온형상부분은 개각은 10°내지 20°인 것을 특징으로 하는 퇴적막 형성법.
  6. 제1항에 있어서, 상기 알루미늄막은 알루미늄 실리콘막인 것을 특징으로 하는 퇴적막 형성법.
  7. 제1항에 있어서, 전자공여성의 표면(A)의 재질은, 단경정실리콘, 다결정실리콘, 비결정실리콘, 텅스텐, 몰리브덴, 탄탈, 텅스텐 실리사이드, 티탄실리사이드, 알루미늄, 알루미늄실리콘, 티탄알루미늄, 티탄나이트라이드, 구리, 알루미늄실리콘동, 알루미늄팔라듐, 티탄, 몰리브덴실리사이드, 탄탈실리사이드로부터 선택되는 것을 특징으로 하는 퇴적막 형성법.
  8. 제1항에 있어서, 비전자공여성의 표면(B)와 재질은 SiO2, Al2O3, SiN, 붕소 또는 인이 도포된 산화실리콘에서 선택되는 것을 특징으로 하는 퇴적막 형성법.
  9. 제1항에 있어서, 상기 기체는 축소에 대해서 경사지게 배치하고 있는 것을 특징으로 하는 퇴적막 형성법.
  10. 플라즈마CVD법을 이용해서 알루미늄막을 형성하는 퇴적막 형성법에 있어서, (a) 전자공여성의 표면(A)의 비전자공여성의 표면(B)를 공유하는 기체를 플라즈마중으로의 역류방지수단을 구비한 퇴적막 형성용공간에 배치하는 공정, 및 (b) 트리메틸 알루미늄가스와 수소가스를 상기 퇴적막 형성용의 공간에 도입하는 고정을 포함, 상기 알루미늄막을 상기 전자공여성 표면(A)에 선택적으로 형성하는 것을 특징으로 하는 퇴적막 형성법.
  11. 제10항에 있어서, 상기 역류방지수단은 상기 트리메틸 알루미늄의 가스 및 상기 수소가스흐름이 상기 퇴적막형성용의 공간축선에 대해서 기울기를 갖는 성분을 가지도록 하는 수단인 것을 특징으로 하는 퇴적막 형성법.
  12. 제11항에 있어서, 상기 수단은 상기 공간을 구성하기 위한 반응관의 부분으로, 상기 플라즈마의 발생영역에 있어서 단면적이 확대해가는 형상을 가지는 부분인 것을 특징으로 하는 퇴적막 형성법.
  13. 제11항에 있어서, 상기 수단은 상기 기체를 기울여 배치하기위한 부재를 갖는 것을 특징으로 하는 퇴적막 형성법.
  14. 제12항에 있어서, 상기 단면적이 확대해가는 형상부분의 개각은 10°내지 20°인 것을 특징으로 하는 퇴적막 형성법.
  15. 제10항에 있어서, 상기 알루미늄막은 알루미늄 또는 알루미늄실리콘막인 것을 특징으로 하는 퇴적막 형성법.
  16. 제10항에 있어서, 전자공여성의 표면(A)의 재질은, 단결정실리콘, 다결정실리콘, 비정질실리콘, 텅스텐, 몰리브덴, 탄탈, 텅스텐실리사이드, 티탄실리사이드, 알루미늄, 알루미늄실리콘, 티탄알루미늄, 티탄나이트라이드, 구리, 알루미늄실리콘동, 알루미늄팔라듐, 티탄, 몰리브덴실리사이드, 탄탈실리사이드에서 선택되는 것을 특징으로 하는 퇴적막 형성법.
  17. 제10항에 있어서, 비전자공여성의 표면(B)의 재질은 SiO2, Al2O3, SiN, 붕소 또는 인이 도포된 산화실리콘에서 선택되는 것을 특징으로 하는 퇴적막 형성법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900015300A 1989-09-26 1990-09-26 퇴적막 형성법 KR940003098B1 (ko)

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JP1-250028 1989-09-26
JP1250028A JP2726118B2 (ja) 1989-09-26 1989-09-26 堆積膜形成法

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KR910007107A true KR910007107A (ko) 1991-04-30
KR940003098B1 KR940003098B1 (ko) 1994-04-13

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US (1) US5091210A (ko)
EP (1) EP0425090B1 (ko)
JP (1) JP2726118B2 (ko)
KR (1) KR940003098B1 (ko)
AT (1) ATE121461T1 (ko)
DE (1) DE69018764T2 (ko)
MY (1) MY107422A (ko)
PT (1) PT95433B (ko)

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Publication number Publication date
PT95433B (pt) 1997-07-31
US5091210A (en) 1992-02-25
ATE121461T1 (de) 1995-05-15
JP2726118B2 (ja) 1998-03-11
EP0425090A1 (en) 1991-05-02
PT95433A (pt) 1991-05-22
KR940003098B1 (ko) 1994-04-13
EP0425090B1 (en) 1995-04-19
DE69018764T2 (de) 1995-09-14
JPH03111571A (ja) 1991-05-13
DE69018764D1 (de) 1995-05-24
MY107422A (en) 1995-12-30

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