KR910005466A - 전극 단자 상호 접속방법 - Google Patents

전극 단자 상호 접속방법 Download PDF

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Publication number
KR910005466A
KR910005466A KR1019900012676A KR900012676A KR910005466A KR 910005466 A KR910005466 A KR 910005466A KR 1019900012676 A KR1019900012676 A KR 1019900012676A KR 900012676 A KR900012676 A KR 900012676A KR 910005466 A KR910005466 A KR 910005466A
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South Korea
Prior art keywords
circuit board
electrode
electrode terminal
semiconductor device
conductive particles
Prior art date
Application number
KR1019900012676A
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English (en)
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KR940008554B1 (ko
Inventor
히로시 다까바야시
마사노리 다까하시
Original Assignee
야마지 게이조오
캐논 가부시끼가이샤
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Publication date
Priority claimed from JP1210584A external-priority patent/JPH06103702B2/ja
Priority claimed from JP1216140A external-priority patent/JPH0382048A/ja
Priority claimed from JP1324983A external-priority patent/JPH03185894A/ja
Priority claimed from JP2195332A external-priority patent/JP2704033B2/ja
Application filed by 야마지 게이조오, 캐논 가부시끼가이샤 filed Critical 야마지 게이조오
Publication of KR910005466A publication Critical patent/KR910005466A/ko
Application granted granted Critical
Publication of KR940008554B1 publication Critical patent/KR940008554B1/ko

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    • H—ELECTRICITY
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/281—Applying non-metallic protective coatings by means of a preformed insulating foil

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  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Wire Bonding (AREA)
  • Liquid Crystal (AREA)
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Abstract

내용 없음

Description

전극 단자 상호 접속방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 전도성입자를 분산하는 방법을 설명하는 개략도.

Claims (23)

  1. 접속될 한쌍의 회로기판에 형성된 전극단자를 상호 접속하는 방법에 있어서;기판의 전극단자에 전도성 입자를 선택적으로 부착시키기 위해 회로기판중 최소한 1개에 대전된 전도성 입자를 분산시키고, 전기적으로 전극단자를 상호 접속하기 위해 회로기판쌍의 전극단자간에 전도성 입자를 삽입하는 것을 특징으로 하는 전극단자 상호 접속방법.
  2. 제1항에 있어서, 분산전에 전도성 입자를 부착하는데 불필요한 한쌍의 회로 기판을 절연마스크로 덮는 것을 특징으로 하는 전극 단자 상호 접속방법.
  3. 제2항에 있어서, 절연 마스크가 접착제에 의해 회로기판에 이용되는 것을 특징으로 하는 전극단자 상호 접속 방법.
  4. 제1항에 있어서, 전극단자의 접속부와 다른 전극 단자의 일부가 절연막으로 코팅되는 것을 특징으로 하는 전극 단자 접속방법.
  5. 제1항에 있어서, 상기 전도성 입자가 전도성 판을 수지입자를 구비하는 것을 특징으로 하는 전극 단자 상호 접속방법.
  6. 제1항에 있어서, 회로기판중 최소한 1개가 반도체 장치를 구비하는 것을 특징으로 하는 전극 단자 상호 접속방법.
  7. 제6항 있어서, 반도체장치의 다이에지(die egde)와 대면하는 반도체장치와 접속되는 회로기판의 일부를 절연막으로 덮는 것을 특징으로 하는 전극 단자 상호 접속방법.
  8. 제6항에 있어서, 반도체장치의 전극단자가 접속을 위치적으로 일렬로 배열되고, 반도체 장치의 일부가 제1접착제로 다른 회로 기판에 접착되며, 다른 회로 기판과 반도체 장치의 비접착부가 고정을 위해 제2접착제로 접착되는 것을 특징으로 하는 전극 단자 상호 접속방법.
  9. 제1전기 회로기판에 형성된 전극과 제2전기 회로기판에 형성된 전극을 전기적으로 접속시켜서 상호 고정시킨 전극 단자 상호 접속방법에 있어서, 그곳에 형성된 전극 단자에 전도성 입자를 선택적으로 부착시키기 위해 제1 및 제2회로 기판중 최소한 1개에 전도성 입자를 분산시켜서, 제1회로 기판에 형성된 전극단자와 제2회로기판에 형성된 전극단자와 접착시키는 것을 특징으로 하는 전극 단자 상호 접속방법.
  10. 제9항에 있어서, 전도성 입자가 대전되어서 전극단자에 전도성 입자를 선택적으로 부착시키기 위해 전극단자에 집중되는 정전계로 분산되는 것을 특징으로 하는 전극 단자 상호 접속방법.
  11. 제9항에 있어서, 전도성 입자가 분산되는 제1 및 제2회로 기판중 최소한 1개가 접속되는 전극 단자와 다른 전극 단자의 일부르 덮는 절연 필름을 구비하는 것을 특징으로 하는 전극 단자 상호 접속방법.
  12. 9항에 있어서, 상기 전도성 입자가 전도성 판을 덮은 수지 입자를 구비하는 것을 특징으로 하는 전극 단자 상호 접속방법.
  13. 제9항에 있어서, 반도체 장치를 구비하는 것을 특징으로 하는 전극 단자 상호 접속방법.
  14. 제11항에 있어서, 반도체 장치의 다이에지와 대면하는 반도체 장치와 접속되는 회로기판의 일부를 절연막으로 덮는 것을 특징으로 하는 전극 단자 상호 접속방법.
  15. 제13항에 있어서, 반도체 장치의 전극단자가 접속을 위해 위치적으로 일렬로 배열되고, 반도체 장치의 일부가 제1접착제로 다른 회로기판에 접착되며, 다른 회로기판과 반도체 장치의 비 접착부가 고정을 위해 제2접착제로 접착되는 것을 특징으로 하는 전극 단자 상호 접속방법.
  16. 제1전기 회로기판에 형성된 전극과 제2전기 회로기판에 형성된 전극을 전기적으로 접속시켜서 상호 고정시키는 전극 단자 상호 접속 방법에 있어서, 대전계가 형성되는 대전영역을 지나서 전도성 입자가 흐르므로 전도성 입자를 대전시키고, 그곳에 형성된 전극 단자에 전도성 입자를 선택적으로 부착시키기 위해 제1 및 제2회로기판 최소한 한개에 전도성 입자를 분산시킴으로서 제1회로기판에 형성된 전극단자와 제2회로기판에 형성된 전극 단자를 접촉시키는 것을 특징으로 하는 전극 단자 상호 접속방법.
  17. 제16항에 있어서, 상기 대전 영역이 박서 대전기(boxer chager)로 형성되는 것을 특징으로 하는 전극 단자 상호 접속방법.
  18. 제16항에 있어서, 대전된 전도성 입자와 전극 단자에 전도성 입자를 선택적으로 부착시키기 위해 전극 단자에 집중되는 정전계에서 분산되는 것을 특징으로 하는 전극 단자 상호 접속방법.
  19. 제16항에 있어서, 회로기판상의 전극 단자의 접속부와 다른 일부를 절연부재로 덮으므로서, 대전된 전도성 입자가 분산되어 회로기판상의 전극단자에 부착되는 것을 특징으로 하는 전극 단자 상호 접속방법.
  20. 제16항에 있어서, 상기 전도성 입자가 전도성 판을 덮은 수지 입자를 구비하는 것을 특징으로 하는 전극 단자 상호 접속방법.
  21. 제16항에 있어서, 제1회로기판에 형성된 전극 단자와 제1회로기판에 형성된 전극 단자가 절연 접착제로 서로 고착되는 것을 특징으로 하는 전극 단자 상호 접속방법.
  22. 반도체 장치의 전극패드와 회로기판의 전극 단자사이에 위치적으로 일렬로 배열한 후 회로기판에 반도체 장치를 접속하는 방법에 있어서, 회로기판의 전극 단자와 반도체 장치의 전극패드 중 최소한 한개에 전도성 수지 및 전도성 입자를 혼합한 페이스트(paste)를 이용하여, 전도성 수지를 경화시키는 반면에 회로기판의 전극 단자에 대하여 반도체 장치의 전극 패드를 누르는 것을 특징으로 하는 반도체 장치 접속방법.
  23. 제22항에 있어서, 상기 전도성 입자가 전도성 판을 덮은 수지 입자를 구비하는 것을 특징으로 하는 전극 단자 상호 접속방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900012676A 1989-08-17 1990-08-17 전극단자 상호 접속방법 KR940008554B1 (ko)

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JP1210584A JPH06103702B2 (ja) 1989-08-17 1989-08-17 電極端子の相互接続方法及び電気接続構造体の製造方法
JP1-210584 1989-08-17
JP1-216140 1989-08-24
JP1216140A JPH0382048A (ja) 1989-08-24 1989-08-24 半導体素子の接続方法
JP1-324983 1989-12-15
JP1324983A JPH03185894A (ja) 1989-12-15 1989-12-15 電極端子の相互接続方法
JP2195332A JP2704033B2 (ja) 1990-07-23 1990-07-23 電極端子の相互接続方法
JP2-195332 1990-07-23

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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4242408C2 (de) * 1991-12-11 1998-02-26 Mitsubishi Electric Corp Verfahren zum Verbinden eines Schaltkreissubstrates mit einem Halbleiterteil
WO1994001284A1 (en) * 1992-07-03 1994-01-20 Citizen Watch Co., Ltd. Ink jet head
JPH07221105A (ja) * 1994-01-31 1995-08-18 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
TW277152B (ko) * 1994-05-10 1996-06-01 Hitachi Chemical Co Ltd
EP0710058A3 (en) * 1994-10-14 1997-07-09 Samsung Display Devices Co Ltd Short circuit prevention between electrically conductive parts
EP0827632B1 (en) * 1995-05-22 2002-01-09 Hitachi Chemical Co., Ltd. Semiconductor device having a semiconductor chip electrically connected to a wiring substrate
DE19529490A1 (de) * 1995-08-10 1997-02-13 Fraunhofer Ges Forschung Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips
SG47183A1 (en) * 1995-10-16 1998-03-20 Texas Instruments Inc Method and apparatus for forming bumps on substrates
KR970064335A (ko) * 1996-02-01 1997-09-12 빈센트 비. 인그라시아 프린트된 와이어링 보드 단자상에 전도층을 형성하는 방법 및 장치
JPH1084014A (ja) * 1996-07-19 1998-03-31 Shinko Electric Ind Co Ltd 半導体装置の製造方法
US6635514B1 (en) * 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
US6867948B1 (en) * 1999-01-22 2005-03-15 Seagate Technology Llc Disc drives having flexible circuits with liquid crystal polymer dielectric
US7662468B2 (en) * 2000-10-06 2010-02-16 Brock Usa, Llc Composite materials made from pretreated, adhesive coated beads
KR100737896B1 (ko) 2001-02-07 2007-07-10 삼성전자주식회사 어레이 기판과, 액정표시장치 및 그 제조방법
JP3711873B2 (ja) 2001-02-19 2005-11-02 ソニーケミカル株式会社 バンプレスｉｃチップの製造方法
WO2003003798A1 (en) * 2001-06-29 2003-01-09 Toray Engineering Co., Ltd. Joining method using anisotropic conductive adhesive
DE10141753A1 (de) * 2001-08-29 2003-03-20 Orga Kartensysteme Gmbh Verfahren zur Montage eines elektronischen Bauelementes auf einer Trägerstuktur in Face-Down-Technik
US6768209B1 (en) * 2003-02-03 2004-07-27 Micron Technology, Inc. Underfill compounds including electrically charged filler elements, microelectronic devices having underfill compounds including electrically charged filler elements, and methods of underfilling microelectronic devices
CN1849180B (zh) * 2003-07-09 2010-06-16 福莱金属公司 沉积和构图方法
US7244477B2 (en) 2003-08-20 2007-07-17 Brock Usa, Llc Multi-layered sports playing field with a water draining, padding layer
TWI239574B (en) * 2004-03-18 2005-09-11 Ind Tech Res Inst The method of conductive particles dispersing
DE102005038956B3 (de) 2005-08-16 2007-03-22 Infineon Technologies Ag Verfahren zum Beschichten einer Struktur mit Halbleiterchips
DE102007027473A1 (de) 2007-06-14 2008-12-18 Manroland Ag Drucktechnisch hergestellte funktionale Komponenten
WO2010095715A1 (ja) * 2009-02-20 2010-08-26 ヘンケル コーポレイション 電極の接続方法およびそれに使用される接続組成物
GB2523983A (en) * 2013-12-17 2015-09-16 Conpart As Bonded assemblies with pre-deposited polymer balls on demarcated areas and methods of forming such bonded assemblies
CN108807841A (zh) * 2018-06-01 2018-11-13 深圳市诚捷智能装备股份有限公司 一种贴胶装置
CN112968116A (zh) * 2020-10-15 2021-06-15 重庆康佳光电技术研究院有限公司 芯片的键合方法和***、存储介质、电子装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3692606A (en) * 1969-03-28 1972-09-19 Ransburg Electro Coating Corp Method of electrostatically depositing particles onto the trailing edge of a substrate
US3923581A (en) * 1971-06-25 1975-12-02 Texas Instruments Inc Method of making a thermal display system
US4049844A (en) * 1974-09-27 1977-09-20 General Electric Company Method for making a circuit board and article made thereby
JPS55110097A (en) * 1979-02-19 1980-08-25 Matsushita Electric Ind Co Ltd Method of mounting electronic part
US4414603A (en) * 1980-03-27 1983-11-08 Senichi Masuda Particle charging apparatus
JPH0230579B2 (ja) * 1981-09-24 1990-07-06 Seiko Epson Corp Handotaishusekikairosochi
JPS59195837A (ja) * 1983-04-21 1984-11-07 Sharp Corp Ｌｓｉチツプボンデイング方法
US4668533A (en) * 1985-05-10 1987-05-26 E. I. Du Pont De Nemours And Company Ink jet printing of printed circuit boards
JPS61289650A (ja) * 1985-06-18 1986-12-19 Nippon Denso Co Ltd 半導体装置の半田バンプ形成方法
JPS62174932A (ja) * 1986-01-28 1987-07-31 Mitsubishi Electric Corp 半導体装置の製造方法
US4971829A (en) * 1987-06-08 1990-11-20 Canon Kabushiki Kaisha Spraying process for corona charges spacer material and attracting the same to plate having an electrical potential
US4857482A (en) * 1987-06-30 1989-08-15 Kabushiki Kaisha Toshiba Method of forming bump electrode and electronic circuit device
FR2620569A1 (fr) * 1987-09-11 1989-03-17 Radiotechnique Compelec Procede pour calibrer l'epaisseur d'une soudure d'un composant electronique sur un substrat
JPH0740496B2 (ja) * 1989-03-01 1995-05-01 シャープ株式会社 電極上への導電性粒子の配置方法

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ATE138225T1 (de) 1996-06-15
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KR940008554B1 (ko) 1994-09-24
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US5352318A (en) 1994-10-04
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