KR890013751A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR890013751A
KR890013751A KR1019890001781A KR890001781A KR890013751A KR 890013751 A KR890013751 A KR 890013751A KR 1019890001781 A KR1019890001781 A KR 1019890001781A KR 890001781 A KR890001781 A KR 890001781A KR 890013751 A KR890013751 A KR 890013751A
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semiconductor device
substrate
semiconductor
terminal
main surface
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KR1019890001781A
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KR0120921B1 (ko
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도시오 스가노
세이이찌로 쯔꾸이
시게루 스즈끼
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미다 가쓰시게
가부시끼가이샤 히다찌세이사꾸쇼
스즈끼 신이찌로
히다찌도부 세미콘닥터 가부시끼가이샤
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Publication of KR890013751A publication Critical patent/KR890013751A/ko
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Publication of KR0120921B1 publication Critical patent/KR0120921B1/ko

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Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명인 반도체 장치를 경사지게 내장한 상태의 단면도.
제2도(a)는 배선기판의 위면에 반도체 소자를 내장한 상태를 도시한 위면내장도.
제2도(b)는 배선기판의 아래면에 반도체 소자를 내장한 상태를 도시한 아래면 내장도.
제3도는 상기 배선기판의 외부전극단자의 핀 배치도.

Claims (20)

  1. 주면(2a) 및 이면(2b)와 한쪽 끝에 외부전극95)를 구비한 기판(2), 상기 기판의 주면 및 이면에 내장되고, 상기 외부전극과 전기적으로 도통된 여러개의 반도체 소자(3a,3b)로 구성하는 반도체 장치에 있어서, 상기 기판의 주면(2a)에 내장된 반도체 소자(3a)는 기판의 이면(2b)에 내장된 반도체 소자(3b)에 대면하는 위치보다 상기 외부전극(5)가 형성된 한쪽끝쪽으로 내장되어 있는 반도체 장치.
  2. 특허청구의 범위 제1항에 있어서, 또 상기 기판을 내장하기 위한 장착부 및 전기적도통을 하기 위한 외부단자부로 되는 소켓부(25)를 포함하는 반도체 장치.
  3. 특허청구의 범위 제2항에 있어서, 또 외부와 전기적도통을 위하기 위한 접속단자부 및 상기 소켓부를 내장하기 위한 내장부로 되는 제1의 기판을 포함하는 반도체 장치.
  4. 특허청구의 범위 제3항에 있어서, 또 상기 제1의 기판의 적어도 1개를 내장하기 위한 제2의 기판을 포함하는 반도체 장치.
  5. 특허청구의 범위 제1항에 있어서, 상기 반도체 소자는 주면에 회로 및 외부단자가 형성된 반도체펠릿(22), 상기 외부단자와 금속와이어(23)에 의해서 전기적으로 접속된 리이드(4)로 되고, 상기 반도체펠릿, 금속와이어, 리이드의 일부를 수지(19)로 봉하여 막은 반도체 장치.
  6. 특허청구의 범위 제1항에 있어서, 또 외부와 전기적 도통을 취하기 위한 접속단자부와 상기 기판의 외부전극이 삽입되는 내장부로 되는 제1의 기판을 포함하는 반도체 장치.
  7. 특허청구의 범위 제6항에 있어서, 또, 상기 제1의 기판의 적어도 1개를 내장하기 위한 제2의 기판을 포함하는 반도체 장치.
  8. 특허청구의 범위 제1항에 있어서, 상기 기판은 4개의 수지층(10a∼10d)로 되는 반도체 장치.
  9. 특허청구의 범위 제1항에 있어서, 상기 수지층은 글라스에폭시수지재로 되는 반도체 장치.
  10. 특허청구의 범위 제8항에 있어서, 상기 수지층중 1개는 전원전압단자(Vcc)이고, 다른 1개는 기준전압단자(Vss)인 반도체 장치.
  11. 주면 및 이면, 긴변 및 짧은 변으로 되고, 상기 긴변의 한쪽에 외부전극을 구비한 4각형의 기판, 긴면 및 짧은 변으로 되고, 긴변쪽이 상기 기판의 짧은변과 평행하게, 짧은변쪽이 상기 기판의 긴변과 평행하게 되고, 또 상기 기판의 주면 및 이면에 내장되는 반도체 소자, 상기 외부전극과 반도체 소자를 전기적으로 접속하기 위한 상기 기판의 주면 및 이면에 형성된 배선패턴으로 구성하는 반도체 장치에 있어서, 상기 기판의 주면에 내장된 반도체 소자의 상기 외부전극에 근접한 쪽의 짧은 변에서 상기 외부단자까지의 거리는 상기 기판의 이면에 내장된 반도체소자의 상기 외부전극에 근접한 쪽의 짧은변에서 상기 외부단자까지의 거리보다 작게 되도록 설정되어 있는 반도체 장치.
  12. 특허청구의 범위 제11항에 있어서, 또 상기 기판을 내장하기 위한 장착부 및 전기적도통을 하기 위한 외부단자부로 되는 소켓부(25)를 포함하는 반도체 장치.
  13. 특허청구의 범위 제12항에 있어서, 또 외부와 전기적도통을 취하기 위한 접속단자부 및 상기 소켓부를 내장하기 위한 내장부로 되는 제1의 기판을 포함하는 반도체 장치.
  14. 특허청구의 범위 제13항에 있어서, 또 상기 제1의 기판의 적어도 1개를 내장하기 위한 제2의 기판을 포함하는 반도체 장치.
  15. 특허청구의 범위 제11항에 있어서, 상기 반도체 소자는 주면에 회로 및 외부단자가 형성된 반도체펠릿(22), 상기 외부단자와 금속와이어(23)에 의해서 전기적으로 접속된 리이드(4)로 되고, 상기 반도체펠릿, 금속와이어, 리이드의 일부를 수지(19)로 봉하여 막은 반도체 장치.
  16. 특허청구의 범위 제11항에 있어서, 또 외부와 전기적도통을 취하기 위한 접속단자부와 상기 기판의 외부전극이 삽입되는 내장부로 되는 제1의 기판을 포함하는 반도체 장치.
  17. 특허청구의 범위 제16항에 있어서, 또 상기 제1의 기판의 적어도 1개를 내장하기 위한 제2의 기판을 포함하는 반도체 장치.
  18. 특허청구의 범위 제11항에 있어서, 상기 기판은 4개의 수지층(10a∼10d)로 되는 반도체 장치.
  19. 특허청구의 범위 제18항에 있어서, 상기 수지층은 글라스에폭시수지재로 되는 반도체 장치.
  20. 특허청구의 범위 제 18항에 있어서, 상기 수지층중 1개는 전원전압단자(Vcc)이고, 다른 1개는 기준전압단자(Vss)인 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001781A 1988-02-26 1989-02-16 반도체 장치 KR0120921B1 (ko)

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US5103247A (en) 1992-04-07
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KR0120921B1 (ko) 1997-10-27
US4984064A (en) 1991-01-08

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