KR880004726A - 반도체레이저의 본딩방법 및 그 장치 - Google Patents

반도체레이저의 본딩방법 및 그 장치 Download PDF

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Publication number
KR880004726A
KR880004726A KR870009910A KR870009910A KR880004726A KR 880004726 A KR880004726 A KR 880004726A KR 870009910 A KR870009910 A KR 870009910A KR 870009910 A KR870009910 A KR 870009910A KR 880004726 A KR880004726 A KR 880004726A
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KR
South Korea
Prior art keywords
laser chip
laser
bonding
chip
semiconductor laser
Prior art date
Application number
KR870009910A
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English (en)
Other versions
KR910005314B1 (ko
Inventor
아끼히로 야마모도
유다까 마끼노
신지 카이노
Original Assignee
다니이 아끼오
마쯔시다덴기산교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니이 아끼오, 마쯔시다덴기산교 가부시끼가이샤 filed Critical 다니이 아끼오
Publication of KR880004726A publication Critical patent/KR880004726A/ko
Application granted granted Critical
Publication of KR910005314B1 publication Critical patent/KR910005314B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음

Description

반도체레이저의 본딩방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명 방법의 일실시예의 플로우차아트.
제2도는 본 발명 장치의 일실시예의 전체사시도.
제3도는 동 요부의 사시도.

Claims (2)

  1. 포스트상에 직접 또는 중간칩을 개재해서 레이저칩을 적층한 상태로, 레이저칩을 발광시켜서 그 발광방향을 계측하고, 필요에 따라서 발광 방향을 보정한 후 본딩하는 것을 특징으로 하는 반도체레이저의 본딩방법.
  2. 레이저칩을 지지해서 포스트위 또는 그 위의 중간칩의 위에 위치조정가능하게 공급하는 레이저칩 공급수단을 착설하고, 이 레이저칩 공급수단을 통해서 레이저칩에 통전하여 이 레이저칩을 발광시키는 레이저발광수단과, 발광방향의 계측수단과, 상기 포스트에 통전 가열해서 본딩하는 본딩수단을 갖추고 있는 것을 특징으로 하는 반도체레이저 본딩장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870009910A 1986-09-09 1987-09-08 반도체 레이저의 본딩방법 및 그 장치 KR910005314B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP86-212283 1986-09-09
JP61212283A JPH0746747B2 (ja) 1986-09-09 1986-09-09 半導体レーザのボンディング方法
JP212283 1990-08-10

Publications (2)

Publication Number Publication Date
KR880004726A true KR880004726A (ko) 1988-06-07
KR910005314B1 KR910005314B1 (ko) 1991-07-24

Family

ID=16620035

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009910A KR910005314B1 (ko) 1986-09-09 1987-09-08 반도체 레이저의 본딩방법 및 그 장치

Country Status (5)

Country Link
US (1) US4817849A (ko)
EP (1) EP0259816B1 (ko)
JP (1) JPH0746747B2 (ko)
KR (1) KR910005314B1 (ko)
DE (1) DE3779228D1 (ko)

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GB8807729D0 (en) * 1988-03-31 1988-05-05 British Telecomm Device mounting
FR2651025B1 (fr) * 1989-08-18 1991-10-18 Commissariat Energie Atomique Assemblage de pieces faisant un angle entre elles et procede d'obtention de cet assemblage
AU634334B2 (en) * 1990-01-23 1993-02-18 Sumitomo Electric Industries, Ltd. Packaging structure and method for packaging a semiconductor device
JP2547895B2 (ja) * 1990-03-20 1996-10-23 シャープ株式会社 半導体装置の実装方法
US5262355A (en) * 1990-06-19 1993-11-16 Sumitomo Electric Industries, Ltd. Method for packaging a semiconductor device
US5264392A (en) * 1990-07-05 1993-11-23 At&T Bell Laboratories Fabrication technique for silicon-based optical subassemblies
JP2811613B2 (ja) * 1991-09-02 1998-10-15 ティーディーケイ株式会社 電子部品の製造方法及び装置
US5230145A (en) * 1992-07-15 1993-07-27 At&T Bell Laboratories Assembly including patterned diamond film submount with self-aligned laser device
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JP2825088B2 (ja) * 1996-11-19 1998-11-18 日本電気株式会社 半導体装置の製造装置およびその製造方法
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KR19990029741A (ko) * 1997-09-29 1999-04-26 갈라스 윌리엄 이 금 도금되는 땜납 재료와 땜납을 이용하여 플럭스 없이 납땜하는 방법
JP3328878B2 (ja) * 1998-10-26 2002-09-30 澁谷工業株式会社 ボンディング装置
JP4050865B2 (ja) 1999-12-01 2008-02-20 シャープ株式会社 半導体レーザ装置及びその製造方法及びそれを用いた光ピックアップ
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JP3538602B2 (ja) 2000-06-28 2004-06-14 シャープ株式会社 半導体レーザー装置の製造方法および半導体レーザー装置の製造装置
DE10038510C2 (de) * 2000-08-08 2002-11-07 Bosch Gmbh Robert Verfahren zur Kontaktierung elektronischer Schaltungen und elektronische Schaltung
US6546173B2 (en) 2001-02-20 2003-04-08 Avanti Optics Corporation Optical module
US6956999B2 (en) 2001-02-20 2005-10-18 Cyberoptics Corporation Optical device
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US20040212802A1 (en) 2001-02-20 2004-10-28 Case Steven K. Optical device with alignment compensation
WO2003058720A1 (de) * 2002-01-09 2003-07-17 Infineon Technologies Ag Photodiodenanordnung und verfahren zur herstellung einer verbindung zwischen einem ersten halbleiterbauelement und einem zweiten halbleiterbauelement
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JP5082671B2 (ja) * 2007-08-16 2012-11-28 富士通株式会社 はんだ修正装置およびはんだ修正方法
JP6305127B2 (ja) * 2014-03-12 2018-04-04 三菱電機株式会社 半導体レーザ光源
CN109712918B (zh) * 2018-12-29 2021-03-16 铜陵富仕三佳机器有限公司 芯片检测收集设备及其使用方法

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Also Published As

Publication number Publication date
US4817849A (en) 1989-04-04
EP0259816B1 (en) 1992-05-20
JPS6367793A (ja) 1988-03-26
KR910005314B1 (ko) 1991-07-24
DE3779228D1 (de) 1992-06-25
JPH0746747B2 (ja) 1995-05-17
EP0259816A2 (en) 1988-03-16
EP0259816A3 (en) 1989-05-24

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