DE3887790D1 - Lichtemittierende Halbleitervorrichtung. - Google Patents

Lichtemittierende Halbleitervorrichtung.

Info

Publication number
DE3887790D1
DE3887790D1 DE88307029T DE3887790T DE3887790D1 DE 3887790 D1 DE3887790 D1 DE 3887790D1 DE 88307029 T DE88307029 T DE 88307029T DE 3887790 T DE3887790 T DE 3887790T DE 3887790 D1 DE3887790 D1 DE 3887790D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88307029T
Other languages
English (en)
Other versions
DE3887790T2 (de
Inventor
Masato C O Semiconducto Yamada
Shinji C O Semiconductor Orimo
Takao C O Semiconduct Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE3887790D1 publication Critical patent/DE3887790D1/de
Application granted granted Critical
Publication of DE3887790T2 publication Critical patent/DE3887790T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/002Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE3887790T 1987-07-31 1988-07-29 Lichtemittierende Halbleitervorrichtung. Expired - Fee Related DE3887790T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19024787A JP2681352B2 (ja) 1987-07-31 1987-07-31 発光半導体素子

Publications (2)

Publication Number Publication Date
DE3887790D1 true DE3887790D1 (de) 1994-03-24
DE3887790T2 DE3887790T2 (de) 1994-08-04

Family

ID=16254956

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3887790T Expired - Fee Related DE3887790T2 (de) 1987-07-31 1988-07-29 Lichtemittierende Halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US4905058A (de)
EP (1) EP0301893B1 (de)
JP (1) JP2681352B2 (de)
DE (1) DE3887790T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2763008B2 (ja) * 1988-11-28 1998-06-11 三菱化学株式会社 ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード
JPH0327578A (ja) * 1989-06-23 1991-02-05 Eastman Kodatsuku Japan Kk 発光ダイオ―ドアレイ
JP2818312B2 (ja) * 1990-04-18 1998-10-30 株式会社東芝 発光素子
SE468410B (sv) * 1991-05-08 1993-01-11 Asea Brown Boveri Ytlysande lysdiod
US5323027A (en) * 1991-05-31 1994-06-21 Shin-Etsu Handotai Kabushiki Kaisha Light emitting device with double heterostructure
JP2534945B2 (ja) * 1991-08-29 1996-09-18 信越半導体株式会社 半導体素子の製造方法
US5585305A (en) * 1991-08-29 1996-12-17 Shin-Etsu Handotai Co. Ltd. Method for fabricating a semiconductor device
JP2871477B2 (ja) * 1994-09-22 1999-03-17 信越半導体株式会社 半導体発光装置およびその製造方法
EP0844674A4 (de) * 1996-05-30 1999-09-22 Rohm Co Ltd Lichtemittierende halbleitervorrichtung und herstellungsverfahren
JP4570728B2 (ja) * 2000-04-24 2010-10-27 昭和電工株式会社 半導体発光素子用エピタキシャルウェハ
TW512415B (en) * 2000-11-17 2002-12-01 Emcore Corp Laser separated die with tapered sidewalls for improved light extraction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017880A (en) * 1973-02-12 1977-04-12 Tokyo Shibaura Electric Co., Ltd. Red light emitting gallium phosphide device
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
JPS59213180A (ja) * 1983-05-19 1984-12-03 Toshiba Corp 発光ダイオ−ド
JPS61170080A (ja) * 1985-01-23 1986-07-31 Nec Corp 化合物半導体装置
JPS61183977A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 発光素子及びその製造方法
JPS61228684A (ja) * 1985-04-02 1986-10-11 Sumitomo Electric Ind Ltd 半導体発光素子
JPS6218082A (ja) * 1985-07-16 1987-01-27 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0301893A3 (en) 1990-07-04
JP2681352B2 (ja) 1997-11-26
EP0301893A2 (de) 1989-02-01
JPS6436089A (en) 1989-02-07
US4905058A (en) 1990-02-27
EP0301893B1 (de) 1994-02-16
DE3887790T2 (de) 1994-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee