KR880002252A - 이물 검출 장치 - Google Patents

이물 검출 장치 Download PDF

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Publication number
KR880002252A
KR880002252A KR1019870007840A KR870007840A KR880002252A KR 880002252 A KR880002252 A KR 880002252A KR 1019870007840 A KR1019870007840 A KR 1019870007840A KR 870007840 A KR870007840 A KR 870007840A KR 880002252 A KR880002252 A KR 880002252A
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KR
South Korea
Prior art keywords
semiconductor laser
feed back
inspection
output light
holding
Prior art date
Application number
KR1019870007840A
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English (en)
Other versions
KR900005346B1 (ko
Inventor
미쯔요시 고이즈미
요시마사 오오시마
Original Assignee
미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR880002252A publication Critical patent/KR880002252A/ko
Application granted granted Critical
Publication of KR900005346B1 publication Critical patent/KR900005346B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/86—Investigating moving sheets

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

내용 없음

Description

이물 검출 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예의 피드 백 양의 홀드 회로를 도시한 도면.
제2도 및 제3도는 각각 웨이퍼 이물 검사의 플로우 챠트를 도시한 도면.

Claims (3)

  1. 출력광 모니터 용 센서를 내장한 반도체 레이저를 상기 센서의 출력을 사용해서 피드 백 제어를 행하는 반도체 레이저 구동수단과, 그 피드 백의 양을 홀드하는 수단과, 상기 반도체 레이저의 출력광을 시료상으로 경사 방향으로 조사하도록 여러개의 광학 수단을 대향시켜서 설치한 조명 수단과, 시료상의 이물에서 난 반사하여 바로 위로 향하여 얻어지는 광을 검출하는 검출수단을 구비한 것을 특징으로 하는 이물 검출 장치.
  2. 특허청구의 범위 제1항에 있어서, 상기 조명 수단에, 또 그 반도체 레이저의 출력광 이외의 다른 레이저 광을 차광하는 셔터 수단을 가지며, 검사전에 상기 셔터 수단의 작동에 의해서 상기 반도체 레이저의 출력광만을 모니터해서 피드 백 제어를 행하고, 검사 중 상기 셔터 수단을 제거해서 그 피드 백 양을 홀드해서 상기 반도체 레이저를 구동하는 것을 특징으로 하는 이물 검출장치.
  3. 특허청구의 범위 제1항에 있어서, 상기 조명 수단은, 또 상기 여러개의 반도체 레이저를 각각에 ON/OFF가능하도록 하는 수단을 가지며, 검사 중 이외에서 1개의 반도체 레이저만 ON으로 하여 피드 백 제어를 행한 후에 피드 백 양을 홀드하여, 상기 조작을 다른 모든 반도체 레이저에 대해서 행하고, 검사중은 각각의 반도체 레이저의 홀드한 피드 백 양을 사용해서 각각의 반도체 레이저를 구동하는 것을 특징으로 하는 이물 검출장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007840A 1986-07-21 1987-07-20 이물 검출 장치 KR900005346B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP169701 1986-07-21
JP61169701A JPH0621878B2 (ja) 1986-07-21 1986-07-21 異物検査方法
JP61-169701 1986-07-21

Publications (2)

Publication Number Publication Date
KR880002252A true KR880002252A (ko) 1988-04-30
KR900005346B1 KR900005346B1 (ko) 1990-07-27

Family

ID=15891283

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870007840A KR900005346B1 (ko) 1986-07-21 1987-07-20 이물 검출 장치

Country Status (3)

Country Link
US (1) US4814596A (ko)
JP (1) JPH0621878B2 (ko)
KR (1) KR900005346B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103765B2 (ja) * 1987-10-30 1994-12-14 日本電気株式会社 半導体レーザバイアス電流制御方式
US5046847A (en) * 1987-10-30 1991-09-10 Hitachi Ltd. Method for detecting foreign matter and device for realizing same
US5155370A (en) * 1988-09-09 1992-10-13 Canon Kabushiki Kaisha Device for detecting the relative position of first and second objects
JPH03276782A (ja) * 1990-03-27 1991-12-06 Matsushita Electric Ind Co Ltd パルス光源
US6366690B1 (en) * 1998-07-07 2002-04-02 Applied Materials, Inc. Pixel based machine for patterned wafers
JP5008618B2 (ja) * 2008-07-22 2012-08-22 東京エレクトロン株式会社 基板の周辺端部に付着した異物検出方法、装置及び記憶媒体
CN103779165B (zh) * 2012-10-19 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体设备及工件位置检测方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4375067A (en) * 1979-05-08 1983-02-22 Canon Kabushiki Kaisha Semiconductor laser device having a stabilized output beam
JPS5630630A (en) * 1979-08-23 1981-03-27 Hitachi Ltd Foreign matter detector
JPS5696203A (en) * 1979-12-27 1981-08-04 Fujitsu Ltd Detection device for optical position
JPS582018A (ja) * 1981-06-26 1983-01-07 Toshiba Corp ウエハ及び半導体装置の製造方法
JPS5840878A (ja) * 1981-09-04 1983-03-09 Hitachi Ltd ディジタル光ディスク用半導体レーザの駆動装置
JPS58210505A (ja) * 1982-06-01 1983-12-07 Nec Corp レ−ザ光学装置
JPS60198437A (ja) * 1984-03-23 1985-10-07 Hitachi Electronics Eng Co Ltd レ−ザ光を用いた表面検査装置
JPS60167358U (ja) * 1984-04-16 1985-11-06 三洋電機株式会社 半導体レ−ザの駆動回路
JPH0821173B2 (ja) * 1984-07-27 1996-03-04 松下電器産業株式会社 半導体レ−ザ駆動回路

Also Published As

Publication number Publication date
JPS6326559A (ja) 1988-02-04
JPH0621878B2 (ja) 1994-03-23
US4814596A (en) 1989-03-21
KR900005346B1 (ko) 1990-07-27

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