KR20080052460A - 표시 장치 및 그 제조 방법 - Google Patents
표시 장치 및 그 제조 방법 Download PDFInfo
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- KR20080052460A KR20080052460A KR1020070125934A KR20070125934A KR20080052460A KR 20080052460 A KR20080052460 A KR 20080052460A KR 1020070125934 A KR1020070125934 A KR 1020070125934A KR 20070125934 A KR20070125934 A KR 20070125934A KR 20080052460 A KR20080052460 A KR 20080052460A
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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Abstract
Description
Claims (12)
- 절연성 기판 위에, 박막트랜지스터와 화소 전극과 유지 용량을 구비하는 표시 장치에 있어서,상기 박막트랜지스터는, 반도체층과, 상기 반도체층 위를 덮는 게이트 절연막과, 상기 게이트 절연막을 통해 상기 반도체층과 대향하는 영역을 가지는 게이트 전극과, 상기 반도체층과 전기적으로 접속하는 소스 전극을 구비하고,상기 화소 전극은, 상기 반도체층과 전기적으로 접속되고,상기 유지 용량은, 상기 반도체층이 연장하여 이루어지는 유지 용량하부와 상기 유지 용량하부의 상층에 형성되는 도전막의 적층구조와, 상기 게이트 절연막을 통해 상기 적층구조와 대향하는 유지 용량의 상부 전극을 구비하는 것을 특징으로 하는 표시 장치.
- 제 1항에 있어서,상기 반도체층의 드레인 영역위에 형성된 도전막과,상기 게이트 절연막과 상기 게이트 전극을 피복하는 제1층간 절연막과,상기 제1층간 절연막과 상기 게이트 절연막에 형성된 제1콘택홀과,상기 제1층간 절연막의 상층에 형성된 제2층간 절연막과,상기 제2층간 절연막에 형성된 제2콘택홀을 더 구비한 표시 장치로서,상기 드레인 영역 위에 형성된 도전막은, 상기 제1콘택홀과 상기 제2콘택홀을 통해 상기 화소 전극과 전기적으로 접속되어 있는 것을 특징으로 하는 표시 장치.
- 제 2항에 있어서,상기 제1층간 절연막의 상층에 형성된 드레인 전극을 더 구비한 표시 장치로서,상기 드레인 영역 위에 형성된 도전막은, 상기 제1콘택홀을 통해 상기 드레인 전극과 전기적으로 접속되고,상기 드레인 전극은 상기 제2콘택홀을 통해 상기 화소 전극과 접속되어 있는 것을 특징으로 하는 표시 장치.
- 제 2항에 있어서,상기 드레인 영역 위에 형성된 도전막은, 상기 제1콘택홀과 상기 제2콘택홀을 통해 상기 화소 전극과 직접 접속되어 있는 것을 특징으로 하는 표시 장치.
- 제 2항에 있어서,상기 반도체층의 소스 영역 위에 형성된 도전막을 더 구비한 표시 장치로서,상기 소스 전극은 상기 제1층간 절연막 위에 형성되고,상기 소스 영역 위에 형성된 도전막은, 상기 제1콘택홀을 통해 상기 소스 전극과 접속되어 있는 것을 특징으로 하는 표시 장치.
- 제 4항에 있어서,상기 반도체층의 소스 영역 위에 형성된 도전막과,상기 제1층간 절연막 위에 형성된 소스 전극과,상기 제2층간 절연막에 있어서 상기 소스 전극을 개구하도록 형성된 제3콘택홀과,상기 제1콘택홀과 상기 제2콘택홀을 통해 상기 소스 영역 위에 형성된 도전막과 접속하고, 상기 제3콘택홀을 통해 상기 소스 전극과 접속하는 접속 전극을 더 구비하는 것을 특징으로 하는 표시 장치.
- 제 6항에 있어서,상기 접속 전극은, 상기 화소 전극과 같은 레이어에 형성되어 있는 것을 특징으로 하는 표시 장치.
- 제 2항에 있어서,상기 도전막은, 상기 박막트랜지스터로부터 상기 유지 용량까지 연장되어 있는 것을 특징으로 하는 표시 장치.
- 제 1항에 있어서,상기 도전막이 형성되는 영역은, 상기 반도체층이 형성되는 영역의 내부인 것을 특징으로 하는 표시 장치.
- 제 9항에 있어서,상기 도전막은, Mo 또는 Mo를 주성분으로 하는 합금막으로 형성되어 있는 것을 특징으로 하는 표시 장치.
- 제 9항에 있어서,상기 도전막의 막두께는 25nm이하인 것을 특징으로 하는 표시 장치.
- 청구항 1에 기재된 표시 장치의 제조 방법으로서,절연성 기판 위에 다결정 반도체막을 형성하는 공정과,상기 다결정 반도체막위에 도전막을 형성하는 공정과,상기 도전막 위에 레지스트를 도포하는 공정과,상기 반도체층을 형성하는 영역 이외에는 상기 레지스트가 남지 않도록, 상기 유지 용량하부에 해당하는 영역의 상기 레지스트 막두께가 더욱 두꺼워지도록 상기 레지스트를 가공하는 공정과,상기 레지스트로 피복되지 않는 상기 도전막을 에칭한 후 상기 다결정 반도체막을 에칭하여 상기 반도체층에 가공하고, 상기 레지스트를 일정하게 얇게 하여 상기 유지 용량하부에 해당하는 영역 이외의 상기 레지스트를 제거하는 공정과,상기 유지 용량하부에 해당하는 영역 이외의 상기 도전막을 제거하여, 상기 유지 용량하부와 상기 도전막의 적층구조를 형성하는 공정과,상기 레지스트를 제거하는 공정과,상기 도전막과 상기 반도체층 위에 상기 게이트 절연막을 성막하는 공정과,상기 반도체층과 대향하도록, 상기 게이트 절연막 위에 상기 게이트 전극과 상기 유지 용량의 상부 전극을 형성하는 공정과,상기 반도체층과 접속하는 상기 소스 전극을 형성하는 공정과,상기 반도체층과 접속하는 상기 화소 전극을 형성하는 공정을 구비한 것을 특징으로 하는 표시 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2006-00330528 | 2006-12-07 | ||
JP2006330528A JP4967631B2 (ja) | 2006-12-07 | 2006-12-07 | 表示装置 |
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JP (1) | JP4967631B2 (ko) |
KR (1) | KR100915159B1 (ko) |
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WO2009057444A1 (ja) * | 2007-11-02 | 2009-05-07 | Sharp Kabushiki Kaisha | 回路基板及び表示装置 |
KR101876819B1 (ko) * | 2011-02-01 | 2018-08-10 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 그의 제조방법 |
JP2012208294A (ja) * | 2011-03-29 | 2012-10-25 | Seiko Epson Corp | 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器 |
JP6019329B2 (ja) * | 2011-03-31 | 2016-11-02 | 株式会社Joled | 表示装置および電子機器 |
KR101903671B1 (ko) | 2011-10-07 | 2018-10-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN102646632B (zh) | 2012-03-08 | 2014-04-02 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示装置 |
CN102709328B (zh) * | 2012-05-25 | 2013-07-03 | 京东方科技集团股份有限公司 | 一种阵列基板、其制造方法、显示面板及显示装置 |
CN103456740B (zh) * | 2013-08-22 | 2016-02-24 | 京东方科技集团股份有限公司 | 像素单元及其制造方法、阵列基板和显示装置 |
CN105321825A (zh) * | 2015-11-18 | 2016-02-10 | 武汉华星光电技术有限公司 | 低温多晶硅薄膜晶体管及其制作方法 |
CN106158882B (zh) * | 2016-09-27 | 2019-02-26 | 厦门天马微电子有限公司 | 一种显示装置、显示面板、阵列基板及其制作方法 |
CN107170753B (zh) * | 2017-05-10 | 2020-04-07 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
US11201176B2 (en) | 2017-08-08 | 2021-12-14 | Boe Technology Group Co., Ltd. | Array substrate, display apparatus, and method of fabricating array substrate |
JP6774464B2 (ja) * | 2018-08-24 | 2020-10-21 | 株式会社Joled | 半導体基板および発光装置 |
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JPH10153801A (ja) * | 1990-04-11 | 1998-06-09 | Seiko Epson Corp | 液晶パネルの製造方法 |
JP3024620B2 (ja) | 1990-04-11 | 2000-03-21 | セイコーエプソン株式会社 | 液晶パネルの製造方法 |
JP2800956B2 (ja) * | 1992-03-10 | 1998-09-21 | シャープ株式会社 | アクティブマトリクス基板 |
JPH1138439A (ja) * | 1997-07-16 | 1999-02-12 | Toshiba Corp | アクティブマトリクス基板及びその製造方法並びにアクティブマトリクス型液晶表示装置 |
US6369410B1 (en) | 1997-12-15 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
JPH11261076A (ja) | 1998-03-13 | 1999-09-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2003121878A (ja) * | 1998-11-26 | 2003-04-23 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2000206566A (ja) | 1999-01-18 | 2000-07-28 | Toshiba Corp | 薄膜半導体装置 |
JP3753613B2 (ja) * | 2000-03-17 | 2006-03-08 | セイコーエプソン株式会社 | 電気光学装置及びそれを用いたプロジェクタ |
JP4147747B2 (ja) * | 2000-03-17 | 2008-09-10 | セイコーエプソン株式会社 | 電気光学装置及びプロジェクタ |
JP2002359252A (ja) * | 2000-09-29 | 2002-12-13 | Toshiba Corp | 平面表示装置及びその製造方法 |
JP4739510B2 (ja) * | 2000-12-15 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US7701130B2 (en) * | 2001-08-24 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Luminous device with conductive film |
JP2003075870A (ja) | 2001-09-06 | 2003-03-12 | Toshiba Corp | 平面表示装置およびその製造方法 |
KR100971950B1 (ko) * | 2003-06-30 | 2010-07-23 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
JP4631255B2 (ja) * | 2003-07-16 | 2011-02-16 | セイコーエプソン株式会社 | アクティブマトリクス基板、表示装置、及び電子機器 |
KR20070049740A (ko) * | 2005-11-09 | 2007-05-14 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
JP2007173652A (ja) * | 2005-12-23 | 2007-07-05 | Mitsubishi Electric Corp | 薄膜トランジスタ装置およびその製造方法、ならびに、該薄膜トランジスタ装置を備えた表示装置 |
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CN101196668A (zh) | 2008-06-11 |
KR100915159B1 (ko) | 2009-09-03 |
TW200834198A (en) | 2008-08-16 |
JP4967631B2 (ja) | 2012-07-04 |
US7754541B2 (en) | 2010-07-13 |
JP2008145578A (ja) | 2008-06-26 |
US20080135909A1 (en) | 2008-06-12 |
CN101196668B (zh) | 2010-12-22 |
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