KR20070072371A - 액정 디스플레이 장치의 바닥 기판을 제조하는 방법 - Google Patents
액정 디스플레이 장치의 바닥 기판을 제조하는 방법 Download PDFInfo
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- KR20070072371A KR20070072371A KR1020060130160A KR20060130160A KR20070072371A KR 20070072371 A KR20070072371 A KR 20070072371A KR 1020060130160 A KR1020060130160 A KR 1020060130160A KR 20060130160 A KR20060130160 A KR 20060130160A KR 20070072371 A KR20070072371 A KR 20070072371A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000000206 photolithography Methods 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 115
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010421 TiNx Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910004304 SiNy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (18)
- (a) 기판을 제공하는 단계;(b) 패터닝된 제 1 금속층, 절연층 및 반도체 층을 형성하고, 상기 패터닝된 제 1 금속층이 상기 절연층 및 상기 기판 사이에 개재됨을 특징으로 하는 형성 단계;(c) 상기 반도체층 위로 제 2 금속층을 형성하는 단계;(d) 상기 제 2 금속층 위로 포토레지스트층을 코팅하는 단계;(e) 포토리소그래피 공법에 의해 제 1 및 제 2 두께를 형성하기 위해 포토레지스트층을 패터닝하고, 이때 상기 제 1 두께는 상기 제 2 두께와 다른 것을 특징으로 하는 패터닝 단계;(f) 제 3 두께 및 제 4 두께를 갖는 제 2 금속층을 형성하기 위해 상기 제 2 금속층 및 상기 포토레지스트층을 식각하고, 이때 상기 제 3 두께는 상기 제 4 두께와 다른 것을 특징으로 하는 식각 단계;(g) 패터닝된 제 2 금속층 위로 폴리머층을 코팅하는 단계;(h) 상기 폴리머층을 경화시켜 평면층을 형성하는 단계;(i) 상기 평면층을 식각하여 패터닝된 제 2 금속층의 일부분을 노출하는 단계;(j) 상기 평면층 및 및 상기 패터닝된 제 2 금속층 위로 패터닝된 투명 전극층을 형성하는 단계;를 포함하는 것을 특징으로 하는, 액정 디스플레이 장치의 바닥 기판을 제조하는 방법.
- 제 1 항에 있어서, 상기 패터닝된 제 2 금속층이 형성된 이후에 상기 제 2 금속층 위로 패시베이션층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 (f) 단계의 식각은 건식 식각 또는 습식 식각인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 포토리소그래피 공정은 자외선을 사용하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 제 1 금속층은 박막 트랜지스터의 게이트인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 제 1 금속층의 일부분은 보조 커패시터의 하부 전극인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 제 2 금속층의 일부분은 보조 커패시터의 상부 전극 인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 (i) 단계의 식각은 건식 식각을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 기판은 유리 기판을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 절연층은 산화실리콘(silicon oxide) 또는 질화실리콘(silicon nitride)으로 형성되는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 제 2 금속층의 일부분은 박막 트랜지스터의 소스 전극 또는 드레인 전극인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 반도체층은 비결정 실리콘층을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 반도체층 위에 저항 접촉층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제 13 항에 있어서, 상기 저항 접촉층은 N+ 비결정 실리콘층을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 투명 전극층은 IZO(Indium-Zic-Oxide; 아연첨가 산화인듐) 층 또는 ITO(Indium-Tin-Oxide; 주석첨가 산화인듐) 층을 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 포토리소그래피 공정은 하프톤 마스크(half-tone mask)를 적용하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 제 3 두께 및 제 4 두께 사이의 차이는 대략 1000 Å인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 폴리머층은 상기 (h) 단계에서 조사(illumination)에 의해 경화되는 것을 특징으로 하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094147579 | 2005-12-30 | ||
TW094147579A TWI273712B (en) | 2005-12-30 | 2005-12-30 | A method for manufacturing a bottom substrate of a liquid crystal display device with three mask processes |
Publications (2)
Publication Number | Publication Date |
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KR20070072371A true KR20070072371A (ko) | 2007-07-04 |
KR100875801B1 KR100875801B1 (ko) | 2008-12-26 |
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KR1020060130160A KR100875801B1 (ko) | 2005-12-30 | 2006-12-19 | 액정 디스플레이 장치의 바닥 기판을 제조하는 방법 |
Country Status (4)
Country | Link |
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US (1) | US7435632B2 (ko) |
JP (1) | JP4553392B2 (ko) |
KR (1) | KR100875801B1 (ko) |
TW (1) | TWI273712B (ko) |
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JP4740203B2 (ja) | 2006-08-04 | 2011-08-03 | 北京京東方光電科技有限公司 | 薄膜トランジスタlcd画素ユニットおよびその製造方法 |
TWI346391B (en) | 2007-08-20 | 2011-08-01 | Au Optronics Corp | Liquid crystal display device and the manufacturing method thereof |
KR20120036186A (ko) | 2010-10-07 | 2012-04-17 | 삼성전자주식회사 | 배선, 배선 형성 방법, 상기 배선을 이용한 표시 장치, 및 상기 표시 장치의 제조 방법 |
US8956809B2 (en) * | 2012-08-03 | 2015-02-17 | Applied Materials, Inc. | Apparatus and methods for etching quartz substrate in photomask manufacturing applications |
CN107910300B (zh) * | 2017-11-20 | 2020-04-21 | 合肥京东方光电科技有限公司 | 一种阵列基板的制作方法、阵列基板及显示装置 |
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KR100212409B1 (ko) * | 1990-11-21 | 1999-08-02 | 윌리엄 비. 켐플러 | 수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법 |
JP2914559B2 (ja) * | 1994-11-08 | 1999-07-05 | 松下電器産業株式会社 | 液晶パネル用基板とその製造方法 |
JPH11340462A (ja) * | 1998-05-28 | 1999-12-10 | Fujitsu Ltd | 液晶表示装置およびその製造方法 |
JPH11352515A (ja) * | 1998-06-09 | 1999-12-24 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
KR100372306B1 (ko) * | 1998-11-19 | 2003-08-25 | 삼성전자주식회사 | 박막트랜지스터의제조방법 |
KR100333979B1 (ko) * | 1999-04-26 | 2002-04-24 | 윤종용 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
JP3548711B2 (ja) * | 2000-09-25 | 2004-07-28 | シャープ株式会社 | 液晶用マトリクス基板の製造方法ならびにコンタクトホール形成方法 |
TW546853B (en) * | 2002-05-01 | 2003-08-11 | Au Optronics Corp | Active type OLED and the fabrication method thereof |
JP2004311520A (ja) * | 2003-04-02 | 2004-11-04 | Advanced Display Inc | 表示装置の製造方法 |
KR100984823B1 (ko) * | 2003-10-21 | 2010-10-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
KR101086478B1 (ko) * | 2004-05-27 | 2011-11-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
TWI279918B (en) * | 2005-06-29 | 2007-04-21 | Quanta Display Inc | A method for forming a liquid crystal display |
KR20070045824A (ko) * | 2005-10-28 | 2007-05-02 | 삼성전자주식회사 | 박막 트랜지스터, 표시판 및 그 제조 방법 |
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US7435632B2 (en) | 2008-10-14 |
TWI273712B (en) | 2007-02-11 |
JP2007183623A (ja) | 2007-07-19 |
US20070155034A1 (en) | 2007-07-05 |
KR100875801B1 (ko) | 2008-12-26 |
JP4553392B2 (ja) | 2010-09-29 |
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