KR20060051688A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR20060051688A KR20060051688A KR1020050089879A KR20050089879A KR20060051688A KR 20060051688 A KR20060051688 A KR 20060051688A KR 1020050089879 A KR1020050089879 A KR 1020050089879A KR 20050089879 A KR20050089879 A KR 20050089879A KR 20060051688 A KR20060051688 A KR 20060051688A
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- insulating film
- semiconductor substrate
- electrode pad
- hole
- semiconductor wafer
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Abstract
Description
Claims (7)
- 반도체 기판의 제1면에 제1 절연막을 개재하여 형성된 전극 패드를 갖고, 상기 전극 패드와 상기 반도체 기판의 제2면에 존재하는 외부 접속용 단자를 접속하는 관통 전극을 갖는 반도체 장치의 제조 방법으로서,제1면에 상기 제1 절연막과 상기 전극 패드가 형성된 상기 반도체 기판에 대하여, 상기 전극 패드의 바로 아래에서, 상기 반도체 기판에 관통 구멍을 형성하는 제1 공정과,상기 반도체 기판에 형성된 관통 구멍의 내벽, 및 상기 반도체 기판의 제2면에, 상기 반도체 기판을 음극으로 하는 전착에 의해서 제2 절연막을 형성하는 제2 공정과,상기 제2 절연막을 마스크로 하여 상기 제1 절연막을 에칭해서, 상기 전극 패드 이면을 상기 반도체 기판의 제2면측에 노출시키는 제3 공정과,상기 관통 구멍 내에, 상기 관통 전극으로 되는 도전층을 형성하는 제4 공정을 포함하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 제1 공정에서, 상기 반도체 기판의 파손을 방지하기 위한 보강판이, 상기 제1면측에 접착층을 개재하여 접합되어 있는 상기 반도체 기판이 사용되는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 제2 공정에서, 전착 재료가 폴리이미드 혹은 에폭시인 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 반도체 기판의 제1면에 형성된 제1 절연막이 산화막인 반도체 장치의 제조 방법.
- 반도체 기판의 제1면에 제1 절연막을 개재하여 형성된 전극 패드를 갖고, 상기 전극 패드와 상기 반도체 기판의 제2면에 존재하는 외부 접속용 단자를 접속하는 관통 전극을 갖는 반도체 장치로서,제1면에 상기 제1 절연막과 상기 전극 패드가 형성된 상기 반도체 기판에 대하여, 상기 전극 패드의 바로 아래에서, 상기 반도체 기판에 관통 구멍이 형성되어 있고,상기 관통 구멍의 내벽, 및 상기 반도체 기판의 제2면에는 제2 절연막이 형성되어 있음과 함께,상기 전극 패드의 바로 아래의 제1 절연막에서도, 상기 전극 패드 이면을 상기 반도체 기판의 제2면측에 노출시키도록 개구되어 있고, 상기 제1 절연막의 개구부의 측면은, 상기 관통 구멍의 내벽에서 노출되어 있는 반도체 장치.
- 제5항에 있어서,상기 반도체 기판의 파손을 방지하기 위한 보강판이, 상기 반도체 기판의 제1면측에 접착층을 개재하여 접합되어 있는 반도체 장치.
- 제6항에 있어서,상기 반도체 장치는, 상기 보강판이 광 투과성 부재이고, 상기 반도체 기판과 상기 보강판 사이에는 CCD 센서가 배치된 고체 촬상 소자인 반도체 장치.
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