KR20040070351A - 온도 보상된 데이터가 판독되는 비휘발성 메모리 - Google Patents
온도 보상된 데이터가 판독되는 비휘발성 메모리 Download PDFInfo
- Publication number
- KR20040070351A KR20040070351A KR10-2004-7006728A KR20047006728A KR20040070351A KR 20040070351 A KR20040070351 A KR 20040070351A KR 20047006728 A KR20047006728 A KR 20047006728A KR 20040070351 A KR20040070351 A KR 20040070351A
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- Prior art keywords
- voltage
- source
- transistor
- drain terminal
- control gate
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
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- Read Only Memory (AREA)
Abstract
Description
스티어링 게이트 전압(VSG) | 시간 |
0V | O ns |
1V | 1000 ns |
2V | 1000 ns |
3V | 1000 ns |
Claims (12)
- 비휘발성 메모리에 있어서,격납 소자, 제어 게이트 및 제1 및 제2 소스/드레인 단자를 포함하는 데이터 격납 셀과,제1 전류를 상기 제1 소스/드레인 단자에 공급하도록 동작 가능한 제1 전류원과,상기 제2 소스/드레인 단자에 전기적으로 접속된 노드와,상기 노드에 바이어스 전압을 공급하도록 동작 가능한 바이어스 회로와,상기 제어 게이트에 전압 레벨을 공급하도록 동작 가능한 제어 게이트 전압 회로를 포함하고,상기 바이어스 전압은 온도에 따라 변동하고, 상기 바이어스 전압의 변동은 상기 데이터 격납 셀의 임계 전압의 열적 변동에 개략 역전되는 것을 특징으로 하는 비휘발성 메모리.
- 제 1항에 있어서,데이터 격납 셀의 상기 제1 소스/드레인 단자에 결합된 데이터 센스 회로를 더 포함하고, 상기 데이터 센스 회로는 상기 제1 소스/드레인에서 전압을 감지하도록 동작 가능한 것을 특징으로 하는 비휘발성 메모리.
- 제 1항에 있어서, 상기 바이어스 회로는,상기 노드에 접속된 제2 전류원과,온도에 따라 변동하지 않는 기준 전압을 발생하도록 동작 가능한 기준 전압 발생기와,상기 노드에 결합된 제1 소스/드레인 단자를 구비하고, 상기 기준 전압 발생기에 결합된 게이트 단자를 구비하는 바이어스 트랜지스터를 포함하는 것을 특징으로 하는 비휘발성 메모리.
- 제 1항에 있어서,상기 제어 게이트 전압 회로는 상기 데이터 격납 소자의 판독 사이클 중에 상기 데이터 격납 소자의 상기 제어 게이트에 소정의 순차적인 전압 레벨을 공급하도록 동작 가능한 것을 특징으로 하는 비휘발성 메모리.
- 비휘발성 메모리에 있어서,전하 격납 소자, 제어 게이트 및 제1 및 제2 소스/드레인 단자를 포함하며 데이터를 격납하는 수단과,상기 데이터 격납 수단의 상기 제1 소스/드레인 단자에 제1 전류를 공급하는 수단과,상기 데이터 격납 수단의 상기 제2 소스/드레인 단자에 바이어스 전압을 공급하는 수단과,상기 데이터 격납 소자의 상기 제어 게이트에 전압 레벨을 공급하는 수단을 포함하고,상기 바이어스 전압은 온도에 따라 변동하고, 상기 바어어스 전압의 변동은 상기 데이터 격납 수단의 임계 전압의 열적 변동에 개략 역전되는 것을 특징으로 하는 비휘발성 메모리.
- 제 5항에 있어서,상기 데이터 격납 수단의 상기 제1 소스/드레인 단자에서 전압을 감지하는 수단을 더 포함하는 것을 특징으로 하는 비휘발성 메모리.
- 제 6항에 있어서, 상기 바이어스 전압을 공급하는 수단은,상기 데이터 격납 수단의 상기 제2 소스/드레인 단자로부터 제2 전류를 인출하는 수단과,온도에 따라 거의 변동하지 않는 기준 전압을 발생하는 수단과,상기 데이터 격납 수단의 상기 제2 소스/드레인 단자에 결합된 제1 소스 드레인 단자를 구비하고, 상기 기준 전압을 발생하는 상기 수단에 결합된 게이트 단자를 구비하는 바이어스 트랜지스터를 포함하는 것을 특징으로 하는 비휘발성 메모리.
- 제 7항에 있어서,상기 데이터 격납 수단의 상기 제어 게이트에 전압 레벨을 공급하는 수단은, 상기 데이터 격납 수단의 판독 사이클 중에 상기 데이터 격납 수단의 상기 제어 게이트에 소정의 순차적인 전압 레벨을 공급하도록 동작 가능한 것을 특징으로 하는 비휘발성 메모리.
- 비휘발성 메모리로부터 격납된 데이터를 판독하는 방법에 있어서,노드에 결합된 제2 소스/드레인 단자를 구비하는 EEPROM 트랜지스터의 제1 소스/드레인 단자를 통해 제1 전류를 도통하는 단계와,전류원에 의해 상기 노드를 통해 전류를 도통하는 단계와,상기 노드에 결합된 소스/드레인 단자를 구비하고 상기 전류원에 의해 상기 노드를 통과하는 전류의 적어도 일부를 도통하는 트랜지스터의 게이트에 열적으로 변동하지 않는 바이어스 전압을 공급하는 단계와,상기 EEPROM 트랜지스터의 제어 게이트에 전압을 공급하는 단계와,상기 EEPROM 트랜지스터의 상기 제1 및 제2 소스/드레인 단자에서 전압을 검출하는 단계를 포함하는 것을 특징으로 하는 데이터를 판독하는 방법.
- 제 9항에 있어서,상기 EEPROM 트랜지스터의 제어 게이트에 순차적인 전압을 공급하는 단계와,상기 EEPROM 트랜지스터의 상기 제1 소스/드레인 단자에서의 전압의 강하를 검출하는 단계와,상기 EEPROM 트랜지스터의 상기 제1 소스/드레인 단자에서의 전압의 강하로부터 상기 순차적인 전압 중 어느 전압이 상기 EEPROM 트랜지스터를 도통시키는가를 판별하는 단계를 더 포함하는 것을 특징으로 하는 데이터를 판독하는 방법.
- 제 10항에 있어서,상기 EEPROM 트랜지스터를 도통시키는 전압의 판정에 응답하여 상기 EEPROM 트랜지스터에 의해 격납된 수치 값을 판정하는 단계를 더 포함하는 것을 특징으로 하는 데이터를 판독하는 방법.
- 소스/드레인 단자와, 적어도 하나의 격납 소자와 결합된 제어 게이트 사이의 채널의 적어도 일부의 위에 위치한 적어도 하나의 상기 격납 소자를 별도로 구비하는 비휘발성 메모리 셀로 구성된 어레이를 동작하는 방법에 있어서,데이터를 동시에 판독 또는 프로그래밍하는 하나 이상의 상기 셀을 주소 지정하는 단계와,상기 메모리 셀 어레이의 온도의 작용에 따라 변하는 상기 주소 지정된 셀의 상기 소스/드레인 단자의 적어도 하나에 하나의 레벨의 전기 공급을 인가하는 단계와,상기 메모리 셀 어레이의 온도에 대해 독립적인 상기 주소 지정된 셀의 상기 제어 게이트에 한 셋트의 전압을 인가하는 단계를 포함하는 것을 특징으로 하는 어레이 동작 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/053,171 US6560152B1 (en) | 2001-11-02 | 2001-11-02 | Non-volatile memory with temperature-compensated data read |
US10/053,171 | 2001-11-02 | ||
PCT/US2002/034236 WO2003041082A1 (en) | 2001-11-02 | 2002-10-24 | Non-volatile memory with temperature-compensated data read |
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KR20040070351A true KR20040070351A (ko) | 2004-08-07 |
KR100912795B1 KR100912795B1 (ko) | 2009-08-19 |
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KR1020047006728A KR100912795B1 (ko) | 2001-11-02 | 2002-10-24 | 온도 보상된 데이터가 판독되는 비휘발성 메모리 |
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US (1) | US6560152B1 (ko) |
EP (1) | EP1440446A4 (ko) |
JP (1) | JP4301947B2 (ko) |
KR (1) | KR100912795B1 (ko) |
CN (1) | CN100490157C (ko) |
TW (1) | TWI261267B (ko) |
WO (1) | WO2003041082A1 (ko) |
Cited By (1)
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KR20210032538A (ko) * | 2018-08-27 | 2021-03-24 | 실리콘 스토리지 테크놀로지 인크 | 딥 러닝 신경 네트워크에서 사용되는 아날로그 신경 메모리 시스템 내의 메모리 셀들에 대한 온도 및 누설 보상 |
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EP1440446A4 (en) | 2005-02-02 |
WO2003041082A1 (en) | 2003-05-15 |
CN1610948A (zh) | 2005-04-27 |
CN100490157C (zh) | 2009-05-20 |
JP4301947B2 (ja) | 2009-07-22 |
KR100912795B1 (ko) | 2009-08-19 |
EP1440446A1 (en) | 2004-07-28 |
TWI261267B (en) | 2006-09-01 |
JP2005509240A (ja) | 2005-04-07 |
US6560152B1 (en) | 2003-05-06 |
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