KR20040067899A - 연마반도체웨이퍼 및 그의 제조방법 - Google Patents
연마반도체웨이퍼 및 그의 제조방법 Download PDFInfo
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- KR20040067899A KR20040067899A KR1020040002244A KR20040002244A KR20040067899A KR 20040067899 A KR20040067899 A KR 20040067899A KR 1020040002244 A KR1020040002244 A KR 1020040002244A KR 20040002244 A KR20040002244 A KR 20040002244A KR 20040067899 A KR20040067899 A KR 20040067899A
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- South Korea
- Prior art keywords
- semiconductor wafer
- boundary
- polishing
- edge
- shielding
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 155
- 238000000034 method Methods 0.000 title claims description 24
- 238000005498 polishing Methods 0.000 claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract 2
- 235000012431 wafers Nutrition 0.000 claims description 148
- 230000007797 corrosion Effects 0.000 claims description 19
- 238000005260 corrosion Methods 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000399 orthopedic effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 239000012224 working solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/30—Accessories for evaporators ; Constructional details thereof
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/08—Seawater, e.g. for desalination
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Environmental & Geological Engineering (AREA)
- Water Supply & Treatment (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
Abstract
Description
Δ(㎛) | Y(㎛) | tmax-d(㎛) | tmin-d(㎛) | 테이퍼링a | 테이퍼링b | 차폐원형화 | |
비교실시예 | 350+p | 0 | 0 | 0 | no | no | no |
실시예 1 | 350+p | 0 | 100 | 100 | no | no | no |
실시예 2 | 350+p | 0 | 950 | 950 | no | no | no |
실시예 3 | 100 | 450+p | 1250 | 1250 | no | no | no |
실시예 4 | 0 | 350+p | 1250 | 1250 | no | no | no |
실시예 5 | 0 | 350+p | 1250 | 1250 | no | no | yes |
실시예 6 | 0 | 350+p | 1250 | 100 | yes | no | no |
실시예 7 | 0 | 350+p | 1250 | 100 | yes | no | yes |
실시예 8 | 0 | 350+p | 1250 | 100 | yes | yes | yes |
비교실시예 | 실시예 1 | 실시예 2 | 실시예 3 | |
에칭후SFQR 95%(㎛) | 1.91 | 1.35 | 1.05 | 0.62 |
연마후SFQR 95%(㎛) | 0.85 | 0.65 | 0.47 | 0.26 |
Claims (9)
- 전면, 후면 및 반도체웨이퍼의 중심에서 반경거리에 위치하며, 반도체웨이퍼의 둘레를 형성하고, 반도체웨이퍼의 프로파일경계(profiled boundary)의 부분인 에지(R)를 가진 연마반도체웨이퍼에 있어서, 후면의 R-6mm ~ R-1mm간 영역의 이상적 평면으로부터 후면의 평면도의 최대편차는 0.7㎛인 것을 특징으로 하는 연마반도체웨이퍼.
- 제1항에 있어서,후면의 R-6mm ~ R-1mm간 영역의 이상적 평면으로부터 후면의 평면도의 최대편차는 0.5㎛ 이하인 것을 특징으로 하는 연마반도체웨이퍼.
- 제1항에 있어서,전면은 에피택셜침착층에 의해 형성된 것을 특징으로 하는 연마반도체웨이퍼.
- 유체부식액으로 반도체웨이퍼의 최소 1회처리 및 최소 반도체웨이퍼 전면의최소 1회연마와, 처리시 반도체웨이퍼의 경계에 흐르는 부식액과, 부식액에 의한 직접충돌을 최소 부분적으로 차폐시켜 부식액의 흐름에 면하고 있는 반도체웨이퍼의 경계와로 이루어진 연마반도체웨이퍼를 제조하는 방법에 있어서 반도체웨이퍼의 경계는 반도체웨이퍼의 두께(d)의 방향으로 연장되고, 최소 d+100㎛ 길이를 따라서 차폐됨을 특징으로 하는 연마반도체웨이퍼의 제조방법.
- 반도체웨이퍼와 반도체웨이퍼의 경계앞에 위치하여 경계에 흐르는 유체부식액으로부터 최소 부분적으로 반도체웨이퍼의 경계를 차폐하는 차폐로 이루어진 배치에 있어서, 반도체웨이퍼의 경계는 내부 프로파일단부(E)로부터 길이(p)를 통하여 반도체웨이퍼의 에지(R)까지 연장한 프로파일을 구비하며, 에지는 반도체웨이퍼의 중심으로부터 반경거리에 위치하여 반도체웨이퍼의 둘레를 형성하고 있으며, 차폐는 반도체웨이퍼의 경계에 가장 접근되고, 내부 프로파일단부(E)로부터 소정거리 (Δ)에 있는 변두리(S) 및 반도체웨이퍼의 경계로부터 가장 멀리 있는 변두리를 가지며, 또 차폐는 반도체웨이퍼의 두께(d)방향으로 연장되고, 최소 d+100㎛ 길이의 거리를 따라서 부식액의 흐름에 면하고 있는 반도체웨이퍼의 결계를 차폐하는 것을 특징으로 하는 배치.
- 제5항에 있어서,소정거리(Δ)는 많아야 10mm인 것을 특징으로 하는 배치.
- 제5항에 있어서,변두리(S)는 홈의 저면(G)에 깊이(Y)에 까지 연장된 홈을 구비하며, 반도체웨이퍼의 경계는 홈내에 연장된 것을 특징으로 하는 배치.
- 제5항에 있어서,반도체웨이퍼의 경계에서 가장 멀리 있는 차폐의 변두리는 원형임을 특징으로 하는 배치.
- 제8항에 있어서,차폐는 차폐의 최소한 변두리를 향하여 점점 가늘어지는 것을 특징으로 하는 배치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10302611.8 | 2003-01-23 | ||
DE10302611A DE10302611B4 (de) | 2003-01-23 | 2003-01-23 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060009272A Division KR100664603B1 (ko) | 2003-01-23 | 2006-01-31 | 연마 반도체 웨이퍼 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20040067899A true KR20040067899A (ko) | 2004-07-30 |
KR100677734B1 KR100677734B1 (ko) | 2007-02-05 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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KR1020040002244A KR100677734B1 (ko) | 2003-01-23 | 2004-01-13 | 연마반도체웨이퍼 |
KR1020060009272A KR100664603B1 (ko) | 2003-01-23 | 2006-01-31 | 연마 반도체 웨이퍼 및 그의 제조방법 |
Family Applications After (1)
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KR1020060009272A KR100664603B1 (ko) | 2003-01-23 | 2006-01-31 | 연마 반도체 웨이퍼 및 그의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20040222416A1 (ko) |
JP (1) | JP2004228586A (ko) |
KR (2) | KR100677734B1 (ko) |
CN (1) | CN1303653C (ko) |
DE (1) | DE10302611B4 (ko) |
TW (1) | TWI248641B (ko) |
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DE102009011622B4 (de) | 2009-03-04 | 2018-10-25 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe |
DE102009037281B4 (de) * | 2009-08-12 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
DE102010017751A1 (de) * | 2010-07-06 | 2012-01-12 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
DE102013204830B4 (de) | 2013-03-19 | 2014-10-09 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium |
DE102015225663A1 (de) * | 2015-12-17 | 2017-06-22 | Siltronic Ag | Verfahren zum epitaktischen Beschichten von Halbleiterscheiben und Halbleiterscheibe |
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2003
- 2003-01-23 DE DE10302611A patent/DE10302611B4/de not_active Expired - Lifetime
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- 2004-01-13 KR KR1020040002244A patent/KR100677734B1/ko active IP Right Grant
- 2004-01-18 CN CNB2004100028022A patent/CN1303653C/zh not_active Expired - Lifetime
- 2004-01-20 TW TW093101677A patent/TWI248641B/zh not_active IP Right Cessation
- 2004-01-21 US US10/762,111 patent/US20040222416A1/en not_active Abandoned
- 2004-01-23 JP JP2004016131A patent/JP2004228586A/ja active Pending
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- 2006-01-31 KR KR1020060009272A patent/KR100664603B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
KR20060024825A (ko) | 2006-03-17 |
KR100677734B1 (ko) | 2007-02-05 |
US20040222416A1 (en) | 2004-11-11 |
TWI248641B (en) | 2006-02-01 |
DE10302611A1 (de) | 2004-08-05 |
DE10302611B4 (de) | 2011-07-07 |
US20080057714A1 (en) | 2008-03-06 |
US7972963B2 (en) | 2011-07-05 |
KR100664603B1 (ko) | 2007-01-04 |
TW200414341A (en) | 2004-08-01 |
CN1518069A (zh) | 2004-08-04 |
JP2004228586A (ja) | 2004-08-12 |
CN1303653C (zh) | 2007-03-07 |
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