KR100677734B1 - 연마반도체웨이퍼 - Google Patents
연마반도체웨이퍼 Download PDFInfo
- Publication number
- KR100677734B1 KR100677734B1 KR1020040002244A KR20040002244A KR100677734B1 KR 100677734 B1 KR100677734 B1 KR 100677734B1 KR 1020040002244 A KR1020040002244 A KR 1020040002244A KR 20040002244 A KR20040002244 A KR 20040002244A KR 100677734 B1 KR100677734 B1 KR 100677734B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor wafer
- polishing
- boundary
- edge
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 238000005498 polishing Methods 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000008021 deposition Effects 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 16
- 238000005260 corrosion Methods 0.000 abstract description 16
- 239000007788 liquid Substances 0.000 abstract description 13
- 239000012530 fluid Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 121
- 238000005530 etching Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000399 orthopedic effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 239000012224 working solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/30—Accessories for evaporators ; Constructional details thereof
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/08—Seawater, e.g. for desalination
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Environmental & Geological Engineering (AREA)
- Water Supply & Treatment (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
Abstract
Description
Δ (㎛) | Y (㎛) | tmax-d (㎛) | tmin-d (㎛) | 테이퍼링 a | 테이퍼링 b | 차폐 원형화 | |
비교실시예 | 350+p | 0 | 0 | 0 | no | no | no |
실시예 1 | 350+p | 0 | 100 | 100 | no | no | no |
실시예 2 | 350+p | 0 | 950 | 950 | no | no | no |
실시예 3 | 100 | 450+p | 1250 | 1250 | no | no | no |
실시예 4 | 0 | 350+p | 1250 | 1250 | no | no | no |
실시예 5 | 0 | 350+p | 1250 | 1250 | no | no | yes |
실시예 6 | 0 | 350+p | 1250 | 100 | yes | no | no |
실시예 7 | 0 | 350+p | 1250 | 100 | yes | no | yes |
실시예 8 | 0 | 350+p | 1250 | 100 | yes | yes | yes |
비교실시예 | 실시예 1 | 실시예 2 | 실시예 3 | |
에칭후 SFQR 95%(㎛) | 1.91 | 1.35 | 1.05 | 0.62 |
연마후 SFQR 95%(㎛) | 0.85 | 0.65 | 0.47 | 0.26 |
Claims (9)
- 전면; 후면; 및, 반도체 웨이퍼의 중심에서 반경거리에 위치하며 반도체웨이퍼의 둘레를 형성하고 반도체 웨이퍼의 프로파일경계(profiled boundary)의 부분인 에지(R)를 가진 연마 반도체 웨이퍼에 있어서, 후면의 R-6mm ~ R-1mm간 영역에서 이상적 평면으로부터 후면의 평면도의 최대편차는 0.7㎛인 것을 특징으로 하는 연마 반도체 웨이퍼.
- 제1항에 있어서,후면의 R-6mm ~ R-1mm간 영역에서 이상적 평면으로부터 후면의 평면도의 최대편차는 0.5㎛ 이하인 것을 특징으로 하는 연마 반도체 웨이퍼.
- 제1항에 있어서,전면은 에피택셜침착층에 의해 형성된 것을 특징으로 하는 연마 반도체 웨이퍼.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10302611.8 | 2003-01-23 | ||
DE10302611A DE10302611B4 (de) | 2003-01-23 | 2003-01-23 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060009272A Division KR100664603B1 (ko) | 2003-01-23 | 2006-01-31 | 연마 반도체 웨이퍼 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040067899A KR20040067899A (ko) | 2004-07-30 |
KR100677734B1 true KR100677734B1 (ko) | 2007-02-05 |
Family
ID=32667783
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040002244A KR100677734B1 (ko) | 2003-01-23 | 2004-01-13 | 연마반도체웨이퍼 |
KR1020060009272A KR100664603B1 (ko) | 2003-01-23 | 2006-01-31 | 연마 반도체 웨이퍼 및 그의 제조방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060009272A KR100664603B1 (ko) | 2003-01-23 | 2006-01-31 | 연마 반도체 웨이퍼 및 그의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20040222416A1 (ko) |
JP (1) | JP2004228586A (ko) |
KR (2) | KR100677734B1 (ko) |
CN (1) | CN1303653C (ko) |
DE (1) | DE10302611B4 (ko) |
TW (1) | TWI248641B (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4835069B2 (ja) * | 2005-08-17 | 2011-12-14 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP2008198906A (ja) * | 2007-02-15 | 2008-08-28 | Sumco Corp | シリコンウェーハの製造方法 |
DE102009011622B4 (de) | 2009-03-04 | 2018-10-25 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe |
DE102009037281B4 (de) * | 2009-08-12 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
DE102010017751A1 (de) * | 2010-07-06 | 2012-01-12 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
DE102013204830B4 (de) | 2013-03-19 | 2014-10-09 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium |
DE102015225663A1 (de) * | 2015-12-17 | 2017-06-22 | Siltronic Ag | Verfahren zum epitaktischen Beschichten von Halbleiterscheiben und Halbleiterscheibe |
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JPH0715897B2 (ja) * | 1991-11-20 | 1995-02-22 | 株式会社エンヤシステム | ウエ−ハ端面エッチング方法及び装置 |
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DE4316096C1 (de) * | 1993-05-13 | 1994-11-10 | Wacker Chemitronic | Verfahren zur naßchemischen Behandlung scheibenförmiger Werkstücke |
JP3067479B2 (ja) * | 1993-07-30 | 2000-07-17 | 信越半導体株式会社 | ウエーハの高平坦度エッチング方法および装置 |
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-
2003
- 2003-01-23 DE DE10302611A patent/DE10302611B4/de not_active Expired - Lifetime
-
2004
- 2004-01-13 KR KR1020040002244A patent/KR100677734B1/ko active IP Right Grant
- 2004-01-18 CN CNB2004100028022A patent/CN1303653C/zh not_active Expired - Lifetime
- 2004-01-20 TW TW093101677A patent/TWI248641B/zh not_active IP Right Cessation
- 2004-01-21 US US10/762,111 patent/US20040222416A1/en not_active Abandoned
- 2004-01-23 JP JP2004016131A patent/JP2004228586A/ja active Pending
-
2006
- 2006-01-31 KR KR1020060009272A patent/KR100664603B1/ko active IP Right Grant
-
2007
- 2007-10-11 US US11/703,458 patent/US7972963B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060024825A (ko) | 2006-03-17 |
US20040222416A1 (en) | 2004-11-11 |
TWI248641B (en) | 2006-02-01 |
DE10302611A1 (de) | 2004-08-05 |
DE10302611B4 (de) | 2011-07-07 |
KR20040067899A (ko) | 2004-07-30 |
US20080057714A1 (en) | 2008-03-06 |
US7972963B2 (en) | 2011-07-05 |
KR100664603B1 (ko) | 2007-01-04 |
TW200414341A (en) | 2004-08-01 |
CN1518069A (zh) | 2004-08-04 |
JP2004228586A (ja) | 2004-08-12 |
CN1303653C (zh) | 2007-03-07 |
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