KR20040007236A - 파워 반도체장치 - Google Patents
파워 반도체장치 Download PDFInfo
- Publication number
- KR20040007236A KR20040007236A KR1020030016772A KR20030016772A KR20040007236A KR 20040007236 A KR20040007236 A KR 20040007236A KR 1020030016772 A KR1020030016772 A KR 1020030016772A KR 20030016772 A KR20030016772 A KR 20030016772A KR 20040007236 A KR20040007236 A KR 20040007236A
- Authority
- KR
- South Korea
- Prior art keywords
- power semiconductor
- semiconductor device
- terminal member
- terminal
- heat sink
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (3)
- 서로 대향하는 제1 및 제2 주표면을 갖는 소자배치부분을 각각 갖는 제1 내지 제3 단자부재와,서로 대향하는 제1 및 제2 주표면 및 상기 제1 및 제2 주표면 상에 각각 설치된 제1 및 제2 주전극을 갖는 적어도 하나의 제1 파워 반도체소자와,서로 대향하는 제1 및 제2 주표면 및 상기 제1 및 제2 주표면 상에 각각 설치된 제1 및 제2 주전극을 갖는 적어도 하나의 제2 파워 반도체소자를 구비하고,상기 적어도 하나의 제1 파워 반도체소자는 상기 적어도 하나의 제2 파워 반도체소자와 동일한 구조를 가지고 있으며,상기 제1 단자부재의 상기 소자배치부분의 상기 제2 주표면은, 상기 적어도 하나의 제1 파워 반도체소자의 상기 제1 주전극에 접합되고,상기 적어도 하나의 제1 파워 반도체소자의 상기 제2 주전극은, 상기 제2 단자부재의 상기 소자배치부분의 상기 제1 주표면에 접합되며,상기 제2 단자부재의 상기 소자배치부분의 상기 제2 주표면은, 상기 적어도 하나의 제2 파워 반도체소자의 상기 제1 주전극에 접합되고,상기 적어도 하나의 제2 파워 반도체소자의 상기 제2 주전극은, 상기 제3 단자부재의 상기 소자배치부분의 상기 제1 주표면에 접합되어 있으며,상기 적어도 하나의 제1 및 제2 파워 반도체소자를 수용하는 패키지를 더 구비하고,상기 제1 내지 제3 단자부재는, 상기 패키지 밖으로 인출된 외부접속부분을 각각 더 가진 것을 특징으로 하는 파워 반도체장치.
- 제 1 항에 있어서,상기 제1 단자부재를 통해 상기 적어도 하나의 제1 파워 반도체소자에 대향하도록, 및/또는 상기 제3 단자부재를 통해 상기 적어도 하나의 제2 파워 반도체소자에 대향하도록, 배치된 절연부분을 더 구비한 것을 특징으로 하는 파워 반도체장치.
- 제 1 항에 기재된 파워 반도체장치를 기재로서 구비하고,오목부를 갖는 히트싱크를 더 구비하며,상기 오목부 내에 상기 적어도 하나의 제1 및 제2 파워 반도체소자가 배치되도록, 상기 기재가 상기 오목부 내에 삽입되어 있는 것을 특징으로 하는 파워 반도체장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002205099A JP3847676B2 (ja) | 2002-07-15 | 2002-07-15 | パワー半導体装置 |
JPJP-P-2002-00205099 | 2002-07-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040007236A true KR20040007236A (ko) | 2004-01-24 |
KR100566046B1 KR100566046B1 (ko) | 2006-03-30 |
Family
ID=29267857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030016772A KR100566046B1 (ko) | 2002-07-15 | 2003-03-18 | 파워 반도체장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6642576B1 (ko) |
JP (1) | JP3847676B2 (ko) |
KR (1) | KR100566046B1 (ko) |
CN (1) | CN100347857C (ko) |
DE (1) | DE10310809B4 (ko) |
FR (1) | FR2842352B1 (ko) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004019443B3 (de) * | 2004-04-19 | 2005-08-11 | Siemens Ag | Leistungsmodul |
DE102004027185B4 (de) * | 2004-06-03 | 2008-08-28 | Infineon Technologies Ag | Niederinduktives Halbleiterbauelement mit Halbbrückenkonfiguration |
JP4743396B2 (ja) * | 2004-07-29 | 2011-08-10 | ヤマハ発動機株式会社 | パワーモジュール、モータコントロールユニット、電動輸送機器およびパワーモジュールの製造方法 |
US20060022355A1 (en) * | 2004-07-29 | 2006-02-02 | Takayuki Murai | Power module and electric transportation apparatus incorporating the same |
JP4635564B2 (ja) * | 2004-11-04 | 2011-02-23 | 富士電機システムズ株式会社 | 半導体装置 |
JP4661645B2 (ja) * | 2005-03-23 | 2011-03-30 | トヨタ自動車株式会社 | パワー半導体モジュール |
JP2007027432A (ja) | 2005-07-15 | 2007-02-01 | Sanken Electric Co Ltd | 半導体装置 |
JP2007116013A (ja) * | 2005-10-24 | 2007-05-10 | Renesas Technology Corp | 半導体装置及びそれを用いた電源装置 |
US7554188B2 (en) * | 2006-04-13 | 2009-06-30 | International Rectifier Corporation | Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes |
US20090195066A1 (en) * | 2006-06-23 | 2009-08-06 | Mitsubishi Electric Corporation | Power converter |
JP5232367B2 (ja) | 2006-07-12 | 2013-07-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4803068B2 (ja) * | 2007-02-22 | 2011-10-26 | トヨタ自動車株式会社 | 半導体モジュール |
JP2009043820A (ja) | 2007-08-07 | 2009-02-26 | Rohm Co Ltd | 高効率モジュール |
JP4902560B2 (ja) * | 2008-01-28 | 2012-03-21 | 株式会社日立製作所 | パワー半導体モジュール |
JP5067267B2 (ja) | 2008-06-05 | 2012-11-07 | 三菱電機株式会社 | 樹脂封止型半導体装置とその製造方法 |
JP4957815B2 (ja) * | 2009-06-24 | 2012-06-20 | 株式会社デンソー | 半導体モジュール及びそれを用いた電子回路内蔵型モータ |
FR2951019B1 (fr) * | 2009-10-07 | 2012-06-08 | Valeo Etudes Electroniques | Module de puissance pour vehicule automobile |
US8513784B2 (en) * | 2010-03-18 | 2013-08-20 | Alpha & Omega Semiconductor Incorporated | Multi-layer lead frame package and method of fabrication |
JP5242629B2 (ja) * | 2010-05-10 | 2013-07-24 | 株式会社東芝 | 電力用半導体素子 |
DE102010020900C5 (de) * | 2010-05-18 | 2013-06-06 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung von Leistungshalbleitersubstraten |
JP5174085B2 (ja) * | 2010-05-20 | 2013-04-03 | 三菱電機株式会社 | 半導体装置 |
JP5935672B2 (ja) * | 2012-01-31 | 2016-06-15 | アイシン・エィ・ダブリュ株式会社 | スイッチング素子ユニット |
KR101388737B1 (ko) * | 2012-04-12 | 2014-04-25 | 삼성전기주식회사 | 반도체 패키지, 반도체 모듈, 및 그 실장 구조 |
JP2013258321A (ja) * | 2012-06-13 | 2013-12-26 | Fuji Electric Co Ltd | 半導体装置 |
TWI500135B (zh) | 2012-12-10 | 2015-09-11 | Ind Tech Res Inst | 堆疊式功率元件模組 |
JP5444486B2 (ja) * | 2013-02-15 | 2014-03-19 | 株式会社東芝 | インバータ装置 |
DE102013207507B3 (de) * | 2013-04-25 | 2014-07-24 | Conti Temic Microelectronic Gmbh | Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul |
JP6040312B2 (ja) * | 2013-07-10 | 2016-12-07 | 日立オートモティブシステムズ株式会社 | 電力用半導体モジュール |
DE112014001487B4 (de) | 2013-10-03 | 2021-03-04 | Fuji Electric Co., Ltd. | Halbleitermodul |
WO2015083201A1 (ja) * | 2013-12-05 | 2015-06-11 | 三菱電機株式会社 | 電力半導体装置 |
JP2014140080A (ja) * | 2014-05-07 | 2014-07-31 | Rohm Co Ltd | 高効率モジュール |
EP3140863A1 (de) | 2014-07-01 | 2017-03-15 | Siemens Aktiengesellschaft | Spannverband mit druckstück |
JP6259168B2 (ja) * | 2014-10-24 | 2018-01-10 | アーベーベー・シュバイツ・アーゲー | 半導体モジュールおよび半導体モジュールのスタック配列 |
JP6739453B2 (ja) * | 2015-05-22 | 2020-08-12 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | パワー半導体モジュール |
US10137789B2 (en) * | 2016-07-20 | 2018-11-27 | Ford Global Technologies, Llc | Signal pin arrangement for multi-device power module |
CN108346628B (zh) * | 2017-01-24 | 2021-06-18 | 比亚迪半导体股份有限公司 | 一种功率模块及其制造方法 |
CN109511279B (zh) * | 2017-07-14 | 2022-07-15 | 新电元工业株式会社 | 电子模块 |
JP6870531B2 (ja) * | 2017-08-21 | 2021-05-12 | 三菱電機株式会社 | パワーモジュールおよび電力変換装置 |
US20190103342A1 (en) | 2017-10-04 | 2019-04-04 | Infineon Technologies Ag | Semiconductor chip package comprising substrate, semiconductor chip, and leadframe and a method for fabricating the same |
FR3074011B1 (fr) * | 2017-11-21 | 2019-12-20 | Safran Electronics & Defense | Module electrique de puissance |
DE102018207537A1 (de) * | 2018-05-15 | 2019-11-21 | Robert Bosch Gmbh | Verbundanordnung aus drei gestapelten Fügepartnern |
JP7106981B2 (ja) * | 2018-05-18 | 2022-07-27 | 富士電機株式会社 | 逆導通型半導体装置 |
EP4010926A4 (en) * | 2020-11-02 | 2023-02-22 | Dynex Semiconductor Limited | HIGH POWER DENSITY 3D SEMICONDUCTOR MODULE PACKAGING |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5352991A (en) * | 1993-08-12 | 1994-10-04 | Motorola, Inc. | Power amplifier assembly |
US6031723A (en) * | 1994-08-18 | 2000-02-29 | Allen-Bradley Company, Llc | Insulated surface mount circuit board construction |
JP3396566B2 (ja) * | 1995-10-25 | 2003-04-14 | 三菱電機株式会社 | 半導体装置 |
JP3879150B2 (ja) * | 1996-08-12 | 2007-02-07 | 株式会社デンソー | 半導体装置 |
JP3426101B2 (ja) * | 1997-02-25 | 2003-07-14 | 三菱電機株式会社 | 整流装置 |
US5892676A (en) * | 1997-10-27 | 1999-04-06 | Hsieh; Joe C. | Rectifier bridges assembly having improved heat dispersing characteristics and an arcing-free design |
JP3777755B2 (ja) * | 1997-11-11 | 2006-05-24 | 株式会社デンソー | インバータ装置 |
JP2000091485A (ja) * | 1998-07-14 | 2000-03-31 | Denso Corp | 半導体装置 |
DE19950026B4 (de) * | 1999-10-09 | 2010-11-11 | Robert Bosch Gmbh | Leistungshalbleitermodul |
JP2001135741A (ja) * | 1999-11-05 | 2001-05-18 | Oki Electric Ind Co Ltd | チップ部品の実装構造 |
JP3596388B2 (ja) * | 1999-11-24 | 2004-12-02 | 株式会社デンソー | 半導体装置 |
FR2803132B1 (fr) * | 1999-12-23 | 2002-05-31 | Valeo Equip Electr Moteur | Systeme de redressement perfectionne pour diodes pastilles |
JP2001291823A (ja) * | 2000-04-05 | 2001-10-19 | Toshiba Digital Media Engineering Corp | 半導体装置 |
JP2002026251A (ja) * | 2000-07-11 | 2002-01-25 | Toshiba Corp | 半導体装置 |
-
2002
- 2002-07-15 JP JP2002205099A patent/JP3847676B2/ja not_active Expired - Lifetime
- 2002-12-30 US US10/330,438 patent/US6642576B1/en not_active Expired - Lifetime
-
2003
- 2003-02-12 FR FR0301668A patent/FR2842352B1/fr not_active Expired - Fee Related
- 2003-03-12 DE DE10310809A patent/DE10310809B4/de not_active Expired - Lifetime
- 2003-03-18 KR KR1020030016772A patent/KR100566046B1/ko active IP Right Grant
- 2003-03-20 CN CNB031073220A patent/CN100347857C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1469469A (zh) | 2004-01-21 |
JP3847676B2 (ja) | 2006-11-22 |
FR2842352A1 (fr) | 2004-01-16 |
FR2842352B1 (fr) | 2006-03-03 |
DE10310809A1 (de) | 2004-02-12 |
US6642576B1 (en) | 2003-11-04 |
JP2004047850A (ja) | 2004-02-12 |
DE10310809B4 (de) | 2008-10-23 |
CN100347857C (zh) | 2007-11-07 |
KR100566046B1 (ko) | 2006-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100566046B1 (ko) | 파워 반도체장치 | |
KR100430772B1 (ko) | 반도체장치 | |
US9312192B2 (en) | Semiconductor device | |
US9379083B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
JP3910383B2 (ja) | パワーモジュールおよびインバータ | |
US7557434B2 (en) | Power electronic package having two substrates with multiple electronic components | |
WO2014061211A1 (ja) | 半導体装置 | |
JP4950280B2 (ja) | 高電力密度装置用、特にigbtおよびダイオード用の低インダクタンスのボンドワイヤレス共同パッケージ | |
US20120181682A1 (en) | Semiconductor device | |
JP5017332B2 (ja) | インバータ | |
WO2013171946A1 (ja) | 半導体装置の製造方法および半導体装置 | |
CN116259594A (zh) | 半导体装置及半导体装置的制造方法 | |
US7229855B2 (en) | Process for assembling a double-sided circuit component | |
EP2099121B1 (en) | Power converter apparatus | |
JP2007043204A (ja) | パワーモジュールおよびインバータ | |
US20130256920A1 (en) | Semiconductor device | |
JPH07221264A (ja) | パワー半導体モジュール及びそれを用いたインバータ装置 | |
EP4270477A2 (en) | Power module and method for manufacturing a power module | |
CN219917172U (zh) | 电子器件和功率电子模块 | |
JP7118204B1 (ja) | 半導体装置 | |
US20230420341A1 (en) | Power module for half-bridge circuit with scalable architecture and improved layout | |
WO2023017708A1 (ja) | 半導体装置 | |
US20220102299A1 (en) | Package with pad having open notch | |
CN117423682A (zh) | 采用三维直接接合金属衬底的双侧冷却功率模块 | |
KR20210141370A (ko) | 파워모듈 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130304 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140228 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150224 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160219 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170221 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180302 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190306 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20200303 Year of fee payment: 15 |