KR20030087919A - 박막 트랜지스터 및 그 제조 방법과 이것을 이용한 액정표시 장치 - Google Patents
박막 트랜지스터 및 그 제조 방법과 이것을 이용한 액정표시 장치 Download PDFInfo
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- KR20030087919A KR20030087919A KR10-2003-0022202A KR20030022202A KR20030087919A KR 20030087919 A KR20030087919 A KR 20030087919A KR 20030022202 A KR20030022202 A KR 20030022202A KR 20030087919 A KR20030087919 A KR 20030087919A
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- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title description 17
- 239000004065 semiconductor Substances 0.000 claims description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
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- 239000011229 interlayer Substances 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
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- 229910052785 arsenic Inorganic materials 0.000 description 5
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
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- 229910052796 boron Inorganic materials 0.000 description 3
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
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Abstract
Description
Claims (14)
- 게이트 전극 아래에 형성된 복수의 채널 영역과, 상기 채널 영역마다 형성된, 채널 영역을 사이에 둔 소스 영역 및 드레인 영역을 갖고, 상기 각 소스 영역은 서로 접속됨과 함께, 상기 각 드레인 영역도 서로 접속되고, 또한 상기 각 채널 영역의 채널 폭이 50㎛ 이하, 상기 각 채널 영역끼리의 간격이 3㎛ 이상, 상기 채널 영역끼리의 간격이 상기 각 채널 영역의 채널 폭보다 작은 것을 특징으로 하는 박막 트랜지스터.
- 제1항에 있어서,상기 채널 폭이 10∼50㎛, 각 채널 영역끼리의 간격이 3㎛∼10㎛, 또한 해당 박막 트랜지스터의 레이아웃 폭을 WL, 상기 복수의 채널 영역의 채널 폭을 전부 가산한 사이즈의 채널 영역을 갖는 박막 트랜지스터의 레이아웃 폭을 WL0으로 하면, WL≤WL0×1.2의 관계를 만족하는 것을 특징으로 하는 박막 트랜지스터.
- 제2항에 있어서,상기 채널 폭이 30∼50㎛인 것을 특징으로 하는 박막 트랜지스터.
- 제1항에 있어서,상기 각 소스 영역은 각 소스 영역을 구성하는 반도체층에서 서로 접속되고, 상기 각 드레인 영역도, 각 드레인 영역을 구성하는 반도체층에서 서로 접속되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 제2항에 있어서,상기 각 소스 영역은 각 소스 영역을 구성하는 반도체층에서 서로 접속되고, 상기 각 드레인 영역도, 각 드레인 영역을 구성하는 반도체층에서 서로 접속되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 제3항에 있어서,상기 각 소스 영역은 각 소스 영역을 구성하는 반도체층에서 서로 접속되고, 상기 각 드레인 영역도, 각 드레인 영역을 구성하는 반도체층에서 서로 접속되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 제1항에 있어서,상기 각 소스 영역은 각 소스 영역과 접속되는 배선층에서 서로 접속되고, 상기 각 드레인 영역도, 각 드레인 영역과 접속되는 배선층에서 서로 접속되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 제2항에 있어서,상기 각 소스 영역은 각 소스 영역과 접속되는 배선층에서 서로 접속되고, 상기 각 드레인 영역도, 각 드레인 영역과 접속되는 배선층에서 서로 접속되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 제3항에 있어서,상기 각 소스 영역은 각 소스 영역과 접속되는 배선층에서 서로 접속되고, 상기 각 드레인 영역도, 각 드레인 영역과 접속되는 배선층에서 서로 접속되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 제1항에 있어서,LDD(Lightly Doped Drain) 구조, GOLD(Gate Overlapped LDD) 구조, 멀티 게이트 구조 중 어느 하나의 구조를 취하는 것을 특징으로 하는 박막 트랜지스터.
- 제2항에 있어서,LDD(Lightly Doped Drain) 구조, GOLD(Gate Overlapped LDD) 구조, 멀티 게이트 구조 중 어느 하나의 구조를 취하는 것을 특징으로 하는 박막 트랜지스터.
- 제3항에 있어서,LDD(Lightly Doped Drain) 구조, GOLD(Gate Overlapped LDD) 구조, 멀티 게이트 구조 중 어느 하나의 구조를 취하는 것을 특징으로 하는 박막 트랜지스터.
- 게이트 전극 아래에 형성된 복수의 채널 영역과, 상기 채널 영역마다 형성된, 채널 영역을 사이에 둔 소스 영역 및 드레인 영역을 갖고, 상기 각 소스 영역은 서로 접속됨과 함께, 상기 각 드레인 영역도 서로 접속되고, 또한 상기 각 채널 영역의 채널 폭이 50㎛ 이하, 상기 각 채널 영역끼리의 간격이 3㎛ 이상, 상기 채널 영역끼리의 간격이 상기 각 채널 영역의 채널 폭보다 작은 것을 특징으로 하는 박막 트랜지스터를 이용한 것을 특징으로 하는 액정 표시 장치.
- 채널 폭이 50㎛ 이하인 복수의 채널 영역을, 각 채널 영역끼리의 간격을 3㎛ 이상으로 하고, 또한 상기 채널 영역끼리의 간격을 상기 각 채널 영역의 채널 폭보다 작아지도록 형성함과 함께, 해당 채널 영역마다, 채널 영역을 사이에 둔 소스 영역 및 드레인 영역을 형성하는 공정과,상기 복수의 채널 영역 상에 하나의 게이트 전극을 형성하는 공정과,상기 각 소스 영역을 서로 접속하고, 상기 각 드레인 영역을 서로 접속하는 공정을 포함하는 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
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Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2002-00134631 | 2002-05-09 | ||
JP2002134631A JP2003332578A (ja) | 2002-05-09 | 2002-05-09 | 薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置 |
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KR20030087919A true KR20030087919A (ko) | 2003-11-15 |
KR100681966B1 KR100681966B1 (ko) | 2007-02-15 |
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TW (1) | TWI224398B (ko) |
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US6118148A (en) * | 1996-11-04 | 2000-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP3591242B2 (ja) | 1997-09-18 | 2004-11-17 | セイコーエプソン株式会社 | 薄膜トランジスタ、画素マトリクス及び液晶表示装置 |
JPH11338439A (ja) | 1998-03-27 | 1999-12-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の駆動回路および半導体表示装置 |
-
2002
- 2002-05-09 JP JP2002134631A patent/JP2003332578A/ja active Pending
-
2003
- 2003-03-18 US US10/389,802 patent/US6888182B2/en not_active Expired - Lifetime
- 2003-04-09 KR KR1020030022202A patent/KR100681966B1/ko active IP Right Grant
- 2003-04-10 TW TW092108233A patent/TWI224398B/zh not_active IP Right Cessation
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US7132690B2 (en) | 2004-05-03 | 2006-11-07 | Lg.Philips Lcd Co., Ltd. | Multi-channel type thin film transistor and method of fabricating the same |
US7550331B2 (en) | 2004-05-03 | 2009-06-23 | Lg Display Co., Ltd. | Multi-channel type thin film transistor and method of fabricating the same |
US7704807B2 (en) | 2004-05-03 | 2010-04-27 | Lg Display Co., Ltd. | Multi-channel type thin film transistor and method of fabricating the same |
KR101048707B1 (ko) * | 2004-05-11 | 2011-07-14 | 엘지디스플레이 주식회사 | 액정 표시 장치의 다채널 소자 및 이의 형성 방법 |
KR101127824B1 (ko) * | 2004-09-30 | 2012-03-20 | 엘지디스플레이 주식회사 | 액정표시장치용 트랜지스터 및 이의 제조방법 |
KR101107712B1 (ko) * | 2005-02-28 | 2012-01-25 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR20060133918A (ko) * | 2005-06-21 | 2006-12-27 | 미쓰비시덴키 가부시키가이샤 | 박막 트랜지스터 |
US7538347B2 (en) | 2005-06-21 | 2009-05-26 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor having a channel region that includes a plurality of connecting channel regions |
Also Published As
Publication number | Publication date |
---|---|
US20030209737A1 (en) | 2003-11-13 |
TW200403856A (en) | 2004-03-01 |
US6888182B2 (en) | 2005-05-03 |
KR100681966B1 (ko) | 2007-02-15 |
TWI224398B (en) | 2004-11-21 |
JP2003332578A (ja) | 2003-11-21 |
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