FR3011678B1 - Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant - Google Patents
Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondantInfo
- Publication number
- FR3011678B1 FR3011678B1 FR1359703A FR1359703A FR3011678B1 FR 3011678 B1 FR3011678 B1 FR 3011678B1 FR 1359703 A FR1359703 A FR 1359703A FR 1359703 A FR1359703 A FR 1359703A FR 3011678 B1 FR3011678 B1 FR 3011678B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- mos transistor
- active region
- corresponding integrated
- mechanical cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000002040 relaxant effect Effects 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1359703A FR3011678B1 (fr) | 2013-10-07 | 2013-10-07 | Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant |
US14/505,570 US20150097241A1 (en) | 2013-10-07 | 2014-10-03 | Method for relaxing the transverse mechanical stresses within the active region of a mos transistor, and corresponding integrated circuit |
US14/965,990 US20160099183A1 (en) | 2013-10-07 | 2015-12-11 | Method for relaxing the transverse mechanical stresses within the active region of a mos transistor, and corresponding integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1359703A FR3011678B1 (fr) | 2013-10-07 | 2013-10-07 | Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3011678A1 FR3011678A1 (fr) | 2015-04-10 |
FR3011678B1 true FR3011678B1 (fr) | 2017-01-27 |
Family
ID=49620193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1359703A Active FR3011678B1 (fr) | 2013-10-07 | 2013-10-07 | Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant |
Country Status (2)
Country | Link |
---|---|
US (2) | US20150097241A1 (fr) |
FR (1) | FR3011678B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9882005B2 (en) * | 2015-06-22 | 2018-01-30 | International Business Machines Corporation | Fully depleted silicon-on-insulator device formation |
FR3041145B1 (fr) * | 2015-09-11 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d'une structure de canal de transistor en contrainte uni-axiale |
FR3046492B1 (fr) * | 2015-12-31 | 2018-03-23 | Stmicroelectronics Sa | Procede de realisation de transistors mos contraints |
WO2020028855A1 (fr) * | 2018-08-02 | 2020-02-06 | Saint-Gobain Abrasives, Inc. | Article abrasif comprenant un capteur de détection d'usure |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4959697A (en) * | 1988-07-20 | 1990-09-25 | Vtc Incorporated | Short channel junction field effect transistor |
JP3635683B2 (ja) * | 1993-10-28 | 2005-04-06 | ソニー株式会社 | 電界効果トランジスタ |
US5675164A (en) * | 1995-06-07 | 1997-10-07 | International Business Machines Corporation | High performance multi-mesa field effect transistor |
JP3949193B2 (ja) * | 1996-08-13 | 2007-07-25 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
JP4103968B2 (ja) * | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
US6611037B1 (en) * | 2000-08-28 | 2003-08-26 | Micron Technology, Inc. | Multi-trench region for accumulation of photo-generated charge in a CMOS imager |
JP2003332578A (ja) * | 2002-05-09 | 2003-11-21 | Sharp Corp | 薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置 |
JP2005051022A (ja) * | 2003-07-28 | 2005-02-24 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2005086024A (ja) * | 2003-09-09 | 2005-03-31 | Toshiba Corp | 半導体装置及びその製造方法 |
US7301185B2 (en) * | 2004-11-29 | 2007-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage |
KR100607785B1 (ko) * | 2004-12-31 | 2006-08-02 | 동부일렉트로닉스 주식회사 | 스플릿 게이트 플래시 이이피롬의 제조방법 |
JP2006210584A (ja) * | 2005-01-27 | 2006-08-10 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US7061029B1 (en) * | 2005-02-24 | 2006-06-13 | United Microelectronics Corp. | High-voltage device structure |
JP4849504B2 (ja) * | 2005-03-29 | 2012-01-11 | ラピスセミコンダクタ株式会社 | 半導体装置、その製造方法、出力回路および電子機器 |
US7190050B2 (en) * | 2005-07-01 | 2007-03-13 | Synopsys, Inc. | Integrated circuit on corrugated substrate |
US7605449B2 (en) * | 2005-07-01 | 2009-10-20 | Synopsys, Inc. | Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material |
JP4711061B2 (ja) * | 2005-09-13 | 2011-06-29 | セイコーエプソン株式会社 | 半導体装置 |
ITMI20052140A1 (it) * | 2005-11-10 | 2007-05-11 | St Microelectronics Srl | Metodo di realizzazione di un trasnsitor mos a gate verticale con incavo con incavo di gate svasato |
US7573108B2 (en) * | 2006-05-12 | 2009-08-11 | Micron Technology, Inc | Non-planar transistor and techniques for fabricating the same |
US7880202B2 (en) * | 2006-11-27 | 2011-02-01 | Infineon Technologies Ag | Modulated-Vt transistor |
JP2008140939A (ja) * | 2006-11-30 | 2008-06-19 | Toshiba Corp | 半導体装置およびその製造方法 |
KR100817084B1 (ko) * | 2007-02-02 | 2008-03-26 | 삼성전자주식회사 | 고전압 트랜지스터 및 그 제조방법 |
JP2008218899A (ja) * | 2007-03-07 | 2008-09-18 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5107680B2 (ja) * | 2007-11-16 | 2012-12-26 | パナソニック株式会社 | 半導体装置 |
US7786535B2 (en) * | 2008-01-11 | 2010-08-31 | International Business Machines Corporation | Design structures for high-voltage integrated circuits |
US7790542B2 (en) * | 2008-06-18 | 2010-09-07 | International Business Machines Corporation | CMOS devices having reduced threshold voltage variations and methods of manufacture thereof |
KR101079203B1 (ko) * | 2009-09-28 | 2011-11-03 | 주식회사 하이닉스반도체 | 반도체 장치의 게이트 패턴 및 그의 제조 방법 |
CN102456739A (zh) * | 2010-10-28 | 2012-05-16 | 中国科学院微电子研究所 | 半导体结构及其形成方法 |
JP5748195B2 (ja) * | 2010-11-05 | 2015-07-15 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及びその製造方法 |
US8294511B2 (en) * | 2010-11-19 | 2012-10-23 | Micron Technology, Inc. | Vertically stacked fin transistors and methods of fabricating and operating the same |
US8293602B2 (en) * | 2010-11-19 | 2012-10-23 | Micron Technology, Inc. | Method of fabricating a finFET having cross-hair cells |
US8921899B2 (en) * | 2010-11-19 | 2014-12-30 | Micron Technology, Inc. | Double gated 4F2 dram CHC cell and methods of fabricating the same |
JP5605241B2 (ja) * | 2011-01-27 | 2014-10-15 | 富士通セミコンダクター株式会社 | Mosトランジスタおよび半導体集積回路装置の製造方法 |
US9041099B2 (en) * | 2011-04-11 | 2015-05-26 | Nanya Technology Corp. | Single-sided access device and fabrication method thereof |
US20130043513A1 (en) * | 2011-08-19 | 2013-02-21 | United Microelectronics Corporation | Shallow trench isolation structure and fabricating method thereof |
US9059268B2 (en) * | 2012-02-15 | 2015-06-16 | Tsinghua University | Tunneling field effect transistor and method for fabricating the same |
CN102569363B (zh) * | 2012-02-15 | 2016-03-23 | 清华大学 | 一种耐高压隧穿晶体管及其制备方法 |
KR101983633B1 (ko) * | 2012-11-30 | 2019-05-29 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
KR101998666B1 (ko) * | 2013-06-25 | 2019-10-02 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
KR102072410B1 (ko) * | 2013-08-07 | 2020-02-03 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
-
2013
- 2013-10-07 FR FR1359703A patent/FR3011678B1/fr active Active
-
2014
- 2014-10-03 US US14/505,570 patent/US20150097241A1/en not_active Abandoned
-
2015
- 2015-12-11 US US14/965,990 patent/US20160099183A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20150097241A1 (en) | 2015-04-09 |
FR3011678A1 (fr) | 2015-04-10 |
US20160099183A1 (en) | 2016-04-07 |
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