KR20020029611A - 발광 디바이스 및 발광 반도체 디바이스 상에 형광 층을형성하는 방법 및 형광 스텐실링 합성물 - Google Patents
발광 디바이스 및 발광 반도체 디바이스 상에 형광 층을형성하는 방법 및 형광 스텐실링 합성물 Download PDFInfo
- Publication number
- KR20020029611A KR20020029611A KR1020010062305A KR20010062305A KR20020029611A KR 20020029611 A KR20020029611 A KR 20020029611A KR 1020010062305 A KR1020010062305 A KR 1020010062305A KR 20010062305 A KR20010062305 A KR 20010062305A KR 20020029611 A KR20020029611 A KR 20020029611A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- stencil
- light emitting
- fluorescent
- phosphor
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000007787 solid Substances 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 43
- 239000002245 particle Substances 0.000 claims description 33
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 33
- 229910021485 fumed silica Inorganic materials 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 230000009974 thixotropic effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (24)
- 발광 디바이스에 있어서,활성 영역을 포함하는 반도체 층을 포함하는 층의 스택과,상기 스택의 적어도 일부 주위에 배치된 실질적으로 균일한 두께를 갖는 형광 물질을 포함하는 층을 포함하며,상기 스택에 인접하지 않는 상기 형광 물질을 포함하는 층의 표면은 상기 스택의 형상과 일치하는 발광 디바이스.
- 제 1 항에 있어서,상기 형광 물질을 포함하는 층은 적어도 하나의 실리콘 폴리머를 포함하는 발광 디바이스.
- 제 1 항에 있어서,상기 형광 물질을 포함하는 층은 실리카 입자를 포함하는 발광 디바이스.
- 제 3 항에 있어서,상기 실리카 입자는 연무된 실리카 입자(fumed silica particles)인 발광 디바이스.
- 제 1 항에 있어서,상기 형광 물질을 포함하는 층은 상기 활성 영역에 의해 방출된 파장의 광을 적어도 다른 파장으로 변환시키는 형광체를 포함하는 발광 디바이스.
- 제 5 항에 있어서,상기 형광체는 가돌리늄(gadolinium) 및 세륨(cerium) 도핑된 이트륨 알루미늄 가닛(yttrium aluminium garnet)을 포함하는 발광 디바이스.
- 제 1 항에 있어서,상기 활성 영역은 청색 광을 방출하며, 상기 형광 물질을 포함하는 층은 상기 청색 광의 일부를 백색 광을 생성하기 위해 상기 청색 광의 잔여 부분과 함께 결합될 수 있는 광으로 변환시키는 형광체를 포함하는 발광 디바이스.
- 제 1 항에 있어서,상기 형광 물질을 포함하는 층과 상기 스택 간에 배치된 광학적으로 투명한 층을 더 포함하는 발광 디바이스.
- 발광 디바이스에 있어서,활성 영역을 포함하는 반도체 층을 포함하는 층의 스택과,상기 스택의 적어도 일부 주위에 배치된 실질적으로 균일한 두께를 갖는 형광 물질을 포함하는 층━상기 형광 물질을 포함하는 층은 실리콘 폴리머, 연무된 실리카, 형광체를 포함함━을 포함하되,상기 스택에 인접하지 않는 상기 형광 물질을 포함하는 층의 표면은 상기 스택의 형상과 일치하는 발광 디바이스.
- 발광 반도체 디바이스 상에 형광 층을 형성하는 방법에 있어서,기판 상에 배치된 발광 반도체 디바이스가 스텐실 내의 개구에 위치되도록 기판 상에 스텐실을 위치시키는 단계와,상기 개구 내에 형광 물질을 포함하는 스텐실링 합성물을 증착시키는 단계와,상기 스텐실을 상기 기판으로부터 제거하는 단계와,상기 스텐실링 합성물을 고체 상태로 경화시키는 단계를 포함하는 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 제 10 항에 있어서,상기 개구는 상기 발광 반도체 디바이스의 형상과 실질적으로 일치하는 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 제 10 항에 있어서,상기 개구의 깊이는 상기 발광 반도체 디바이스의 높이와 상기 형광 층의 두께의 합과 대략적으로 동일한 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 제 10 항에 있어서,상기 개구의 폭은 상기 발광 반도체 디바이스의 폭과 상기 형광 층의 두께의 2 배의 합과 대략적으로 동일한 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 제 10 항에 있어서,상기 스텐실링 합성물은 연무된 실리카 입자 및 적어도 하나의 실리콘 폴리머를 포함하는 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 제 14 항에 있어서,상기 연무된 실리카 입자는 약 90 m2/g 보다 큰 단위 질량 당 표면적의 비율을 갖는 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 상기 실리콘 폴리머는 약 1,000 센티스토크 내지 약 20,000 센티스토크의 점성을 갖는 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 제 10 항에 있어서,상기 기판 상에 배치된 다수의 발광 반도체 디바이스 각 하나가 상기 스텐실 내의 다수의 개구의 대응하는 각 하나 내에 위치하도록 상기 스텐실을 배치하는 단계와,상기 개구의 각 하나 내에 상기 스텐실링 합성물을 증착시키는 단계를 더 포함하는 발광 반도체 디바이스 상에 형광 층을 형성하는 방법.
- 형광 스텐실링 합성물에 있어서,광학적으로 투명한 실리콘 폴리머와,형광체 입자와,실리카 입자를 포함하며,상기 형광체 입자 및 상기 실리카 입자는 상기 실리콘 폴리머 내에 분산되는 형광 스텐실링 합성물.
- 제 18 항에 있어서,상기 실리콘 폴리머는 약 1,000 센트스토크 내지 약 20,000 센티스토크의 점성을 갖는 형광 스텐실링 합성물.
- 제 18 항에 있어서,상기 형광체 입자의 중량 농도는 상기 실리콘 폴리머에 대해 약 1:5 내지 약 1:0.8 인 형광 스텐실링 합성물.
- 제 18 항에 있어서,상기 형광체 입자는 가돌리늄 및 세륨 도핑된 이트륨 알루미늄 가닛을 포함하는 형광 스텐실링 합성물.
- 제 18 항에 있어서,상기 실리카 입자는 연무된 실리카 입자인 형광 스텐실링 합성물.
- 제 22 항에 있어서,상기 연무된 실리카 입자는 약 90 m2/g 보다 큰 단위 질량 당 표면적의 비율을 갖는 형광 스텐실링 합성물.
- 제 22 항에 있어서,상기 연무된 실리카 입자의 중량 농도는 상기 실리콘 폴리머에 대해 약 1:70 내지 약 1:20 인 형광 스텐실링 합성물.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/688,053 | 2000-10-13 | ||
US09/688,053 US6650044B1 (en) | 2000-10-13 | 2000-10-13 | Stenciling phosphor layers on light emitting diodes |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020029611A true KR20020029611A (ko) | 2002-04-19 |
KR100951096B1 KR100951096B1 (ko) | 2010-04-07 |
Family
ID=24762921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010062305A KR100951096B1 (ko) | 2000-10-13 | 2001-10-10 | 발광 반도체 디바이스 상에 형광 층을 형성하는 방법 및 형광 스텐실링 합성물 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6650044B1 (ko) |
EP (1) | EP1198016B1 (ko) |
JP (1) | JP4208449B2 (ko) |
KR (1) | KR100951096B1 (ko) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100826426B1 (ko) * | 2006-02-22 | 2008-04-29 | 삼성전기주식회사 | 발광다이오드 패키지 |
KR100866879B1 (ko) * | 2006-12-19 | 2008-11-04 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
KR101007145B1 (ko) * | 2010-01-14 | 2011-01-10 | 엘지이노텍 주식회사 | 발광소자 칩, 발광소자 패키지 및 발광소자 칩의 제조방법 |
WO2011016650A2 (ko) * | 2009-08-03 | 2011-02-10 | 주식회사 동진쎄미켐 | 광학소자의 투광부 패키지 방법 및 장치 |
KR101068649B1 (ko) * | 2004-09-01 | 2011-09-28 | 에피스타 코포레이션 | 반도체 발광 소자 및 그 형성 방법 |
US8546159B2 (en) | 2010-08-25 | 2013-10-01 | Samsung Electronics Co., Ltd. | Phosphor film, method of forming the same, and method of coating phosphor layer on LED chips |
KR101318913B1 (ko) * | 2007-04-30 | 2013-10-17 | 트리도닉 예너스도르프 게엠베하 | 균일한 색 분포를 위해 설계된 색변환층을 갖는 led 모듈 |
KR20150036383A (ko) * | 2012-07-05 | 2015-04-07 | 코닌클리케 필립스 엔.브이. | 투명한 스페이서에 의해 led로부터 분리된 인광체 |
US9166123B2 (en) | 2006-08-08 | 2015-10-20 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
Families Citing this family (234)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747406B1 (en) * | 2000-08-07 | 2004-06-08 | General Electric Company | LED cross-linkable phospor coating |
US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
KR20030002947A (ko) * | 2001-07-03 | 2003-01-09 | 엘지전자 주식회사 | 풀칼라 유기 el 표시소자 및 제조방법 |
TWI226357B (en) * | 2002-05-06 | 2005-01-11 | Osram Opto Semiconductors Gmbh | Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
US7928455B2 (en) * | 2002-07-15 | 2011-04-19 | Epistar Corporation | Semiconductor light-emitting device and method for forming the same |
US7777405B2 (en) * | 2002-07-16 | 2010-08-17 | Odelo Gmbh | White LED headlight |
US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
KR100499129B1 (ko) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
US6822991B2 (en) * | 2002-09-30 | 2004-11-23 | Lumileds Lighting U.S., Llc | Light emitting devices including tunnel junctions |
US6730940B1 (en) * | 2002-10-29 | 2004-05-04 | Lumileds Lighting U.S., Llc | Enhanced brightness light emitting device spot emitter |
EP1597777B1 (en) | 2003-02-26 | 2013-04-24 | Cree, Inc. | Composite white light source and method for fabricating |
US7423296B2 (en) * | 2003-02-26 | 2008-09-09 | Avago Technologies Ecbu Ip Pte Ltd | Apparatus for producing a spectrally-shifted light output from a light emitting device utilizing thin-film luminescent layers |
JP4583724B2 (ja) * | 2003-05-16 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
US7928945B2 (en) | 2003-05-16 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
US8999736B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
EP1658642B1 (en) | 2003-08-28 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
US7344903B2 (en) * | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP2005158795A (ja) * | 2003-11-20 | 2005-06-16 | Sumitomo Electric Ind Ltd | 発光ダイオード及び半導体発光装置 |
JP4496774B2 (ja) * | 2003-12-22 | 2010-07-07 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
US7755095B2 (en) * | 2003-12-24 | 2010-07-13 | Panasonic Corporation | Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
DE202005002110U1 (de) * | 2004-02-19 | 2005-05-04 | Hong-Yuan Technology Co., Ltd., Yonghe | Lichtemittierende Vorrichtung |
EP1566426B1 (en) | 2004-02-23 | 2015-12-02 | Philips Lumileds Lighting Company LLC | Phosphor converted light emitting device |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
US7227192B2 (en) * | 2004-03-31 | 2007-06-05 | Tekcove Co., Ltd | Light-emitting device and manufacturing process of the light-emitting device |
US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
TWI274209B (en) * | 2004-07-16 | 2007-02-21 | Chi Lin Technology Co Ltd | Light emitting diode and backlight module having light emitting diode |
US20090023239A1 (en) * | 2004-07-22 | 2009-01-22 | Luminus Devices, Inc. | Light emitting device processes |
JP4617761B2 (ja) * | 2004-08-03 | 2011-01-26 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US7217583B2 (en) | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
US7372198B2 (en) * | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
CN100399522C (zh) * | 2004-10-12 | 2008-07-02 | 矢野昶晖科技(上海)有限公司 | 生产光色均一的白光led的方法 |
KR100666222B1 (ko) * | 2004-10-20 | 2007-01-09 | 알티전자 주식회사 | 백색 발광 다이오드 제조방법 |
US7192795B2 (en) | 2004-11-18 | 2007-03-20 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
US7314770B2 (en) | 2004-11-18 | 2008-01-01 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
JP2006156837A (ja) * | 2004-11-30 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置、発光モジュール、および照明装置 |
TWI239671B (en) * | 2004-12-30 | 2005-09-11 | Ind Tech Res Inst | LED applied with omnidirectional reflector |
TWI352437B (en) | 2007-08-27 | 2011-11-11 | Epistar Corp | Optoelectronic semiconductor device |
DE102005012953B9 (de) * | 2005-01-26 | 2013-04-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
JP4679183B2 (ja) * | 2005-03-07 | 2011-04-27 | シチズン電子株式会社 | 発光装置及び照明装置 |
CN101138278A (zh) * | 2005-03-09 | 2008-03-05 | 皇家飞利浦电子股份有限公司 | 包括辐射源和荧光材料的照明*** |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US8748923B2 (en) * | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
US7535524B2 (en) * | 2005-04-18 | 2009-05-19 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Display panel with wavelength converting material and control interface to switchably control independent projection or non-projection of primary and secondary IMAGES |
US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US7736945B2 (en) * | 2005-06-09 | 2010-06-15 | Philips Lumileds Lighting Company, Llc | LED assembly having maximum metal support for laser lift-off of growth substrate |
KR101161383B1 (ko) * | 2005-07-04 | 2012-07-02 | 서울반도체 주식회사 | 발광 다이오드 및 이를 제조하기 위한 방법 |
KR101106134B1 (ko) * | 2005-07-11 | 2012-01-20 | 서울옵토디바이스주식회사 | 나노와이어 형광체를 채택한 발광소자 |
EP1908126A4 (en) * | 2005-07-13 | 2010-08-18 | Evident Technologies Inc | SEMICONDUCTOR NANOCRYSTALLINE COMPLEX ELECTROLUMINESCENT DIODE |
US8563339B2 (en) | 2005-08-25 | 2013-10-22 | Cree, Inc. | System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices |
DE102005040558A1 (de) * | 2005-08-26 | 2007-03-01 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip |
WO2007047289A1 (en) * | 2005-10-17 | 2007-04-26 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing encapsulant |
EP1949459A4 (en) * | 2005-10-24 | 2014-04-30 | 3M Innovative Properties Co | METHOD FOR MANUFACTURING A LIGHT EMITTING DEVICE COMPRISING A MOLDED ENCAPSULANT |
US7595515B2 (en) | 2005-10-24 | 2009-09-29 | 3M Innovative Properties Company | Method of making light emitting device having a molded encapsulant |
US7514721B2 (en) * | 2005-11-29 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Luminescent ceramic element for a light emitting device |
JP5614766B2 (ja) | 2005-12-21 | 2014-10-29 | クリー インコーポレイテッドCree Inc. | 照明装置 |
CN101351891B (zh) | 2005-12-22 | 2014-11-19 | 科锐公司 | 照明装置 |
US20070144045A1 (en) * | 2005-12-23 | 2007-06-28 | Lexmark International, Inc. | Electroluminescent display system |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
US7569406B2 (en) | 2006-01-09 | 2009-08-04 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
WO2007080541A1 (en) * | 2006-01-16 | 2007-07-19 | Philips Intellectual Property & Standards Gmbh | Light emitting device with a eu-comprising phosphor material |
WO2007080555A1 (en) | 2006-01-16 | 2007-07-19 | Koninklijke Philips Electronics N.V. | Phosphor converted light emitting device |
EP2002488A4 (en) * | 2006-01-20 | 2012-05-30 | Cree Inc | DISTRIBUTION OF SPECTRAL CONTENT IN SOLID PHYSICIANS BY SPATIAL SEPARATION OF LUMIPHORIDE FILMS |
US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
JP4952884B2 (ja) * | 2006-01-24 | 2012-06-13 | ソニー株式会社 | 半導体発光装置および半導体発光装置組立体 |
WO2007088501A1 (en) * | 2006-01-31 | 2007-08-09 | Koninklijke Philips Electronics N.V. | White light source |
US8430213B2 (en) | 2006-02-08 | 2013-04-30 | Hitachi, Ltd. | Electric brake |
KR100665372B1 (ko) * | 2006-02-21 | 2007-01-09 | 삼성전기주식회사 | 광 추출 효율이 높은 발광 다이오드 패키지 구조 및 이의제조방법 |
US8124957B2 (en) | 2006-02-22 | 2012-02-28 | Cree, Inc. | Low resistance tunnel junctions in wide band gap materials and method of making same |
US7737451B2 (en) * | 2006-02-23 | 2010-06-15 | Cree, Inc. | High efficiency LED with tunnel junction layer |
EP2041478B1 (en) | 2006-03-07 | 2014-08-06 | QD Vision, Inc. | An article including semiconductor nanocrystals |
US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
KR100746749B1 (ko) | 2006-03-15 | 2007-08-09 | (주)케이디티 | 광 여기 시트 |
US7629742B2 (en) * | 2006-03-17 | 2009-12-08 | Lexmark International, Inc. | Electroluminescent displays, media, and members, and methods associated therewith |
US8969908B2 (en) | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
US20070269915A1 (en) * | 2006-05-16 | 2007-11-22 | Ak Wing Leong | LED devices incorporating moisture-resistant seals and having ceramic substrates |
US7655486B2 (en) | 2006-05-17 | 2010-02-02 | 3M Innovative Properties Company | Method of making light emitting device with multilayer silicon-containing encapsulant |
WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
JP2007324417A (ja) * | 2006-06-01 | 2007-12-13 | Sharp Corp | 半導体発光装置とその製造方法 |
US7703945B2 (en) | 2006-06-27 | 2010-04-27 | Cree, Inc. | Efficient emitting LED package and method for efficiently emitting light |
US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
JP4907253B2 (ja) | 2006-08-03 | 2012-03-28 | シャープ株式会社 | 注入装置、製造装置、および半導体発光装置の製造方法 |
US20080113877A1 (en) * | 2006-08-16 | 2008-05-15 | Intematix Corporation | Liquid solution deposition of composition gradient materials |
US8092735B2 (en) | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
KR101008762B1 (ko) * | 2006-10-12 | 2011-01-14 | 파나소닉 주식회사 | 발광 장치 및 그 제조 방법 |
EP2074655B1 (en) | 2006-10-12 | 2016-04-13 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus |
JP2008108952A (ja) * | 2006-10-26 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
US7521862B2 (en) * | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
EP2095018A1 (en) | 2006-12-04 | 2009-09-02 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
WO2008070607A1 (en) | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting assembly and lighting method |
US8704254B2 (en) | 2006-12-22 | 2014-04-22 | Philips Lumileds Lighting Company, Llc | Light emitting device including a filter |
US7902564B2 (en) * | 2006-12-22 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
JP2008166782A (ja) * | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | 発光素子 |
US8836212B2 (en) | 2007-01-11 | 2014-09-16 | Qd Vision, Inc. | Light emissive printed article printed with quantum dot ink |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9196799B2 (en) | 2007-01-22 | 2015-11-24 | Cree, Inc. | LED chips having fluorescent substrates with microholes and methods for fabricating |
US8232564B2 (en) | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
TWI481064B (zh) * | 2007-02-13 | 2015-04-11 | 3M Innovative Properties Co | 具有透鏡之發光二極體裝置及其製造方法 |
US9944031B2 (en) * | 2007-02-13 | 2018-04-17 | 3M Innovative Properties Company | Molded optical articles and methods of making same |
TW200837982A (en) * | 2007-03-07 | 2008-09-16 | Everlight Electronics Co Ltd | Semiconductor light emitting apparatus and the manufacturing method thereof |
US7635609B2 (en) * | 2007-04-16 | 2009-12-22 | Eastman Kodak Company | Patterning method for light-emitting devices |
TWI350012B (en) * | 2007-05-04 | 2011-10-01 | Lite On Technology Corp | White light emitting diode and base thereof |
CN100596343C (zh) * | 2007-05-18 | 2010-03-31 | 厦门大学 | 大功率白光发光二极管的荧光粉涂布方法 |
WO2009014590A2 (en) | 2007-06-25 | 2009-01-29 | Qd Vision, Inc. | Compositions and methods including depositing nanomaterial |
US9401461B2 (en) | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
US10505083B2 (en) | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
EP2171502B1 (en) | 2007-07-17 | 2016-09-14 | Cree, Inc. | Optical elements with internal optical features and methods of fabricating same |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
US7810956B2 (en) * | 2007-08-23 | 2010-10-12 | Koninklijke Philips Electronics N.V. | Light source including reflective wavelength-converting layer |
US8128249B2 (en) | 2007-08-28 | 2012-03-06 | Qd Vision, Inc. | Apparatus for selectively backlighting a material |
TWI396298B (zh) * | 2007-08-29 | 2013-05-11 | Everlight Electronics Co Ltd | 發光半導體元件塗佈螢光粉的方法及其應用 |
US7791093B2 (en) | 2007-09-04 | 2010-09-07 | Koninklijke Philips Electronics N.V. | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
US20090065792A1 (en) | 2007-09-07 | 2009-03-12 | 3M Innovative Properties Company | Method of making an led device having a dome lens |
DE102007053067A1 (de) * | 2007-09-26 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement |
US8883528B2 (en) * | 2007-10-01 | 2014-11-11 | Intematix Corporation | Methods of producing light emitting device with phosphor wavelength conversion |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
TWI401820B (zh) * | 2007-11-07 | 2013-07-11 | Ind Tech Res Inst | 發光元件及其製作方法 |
US8946987B2 (en) | 2007-11-07 | 2015-02-03 | Industrial Technology Research Institute | Light emitting device and fabricating method thereof |
US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
JP5212777B2 (ja) * | 2007-11-28 | 2013-06-19 | スタンレー電気株式会社 | 半導体発光装置及び照明装置 |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
US8940561B2 (en) | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
US20090309114A1 (en) * | 2008-01-16 | 2009-12-17 | Luminus Devices, Inc. | Wavelength converting light-emitting devices and methods of making the same |
JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
CN100483762C (zh) * | 2008-02-25 | 2009-04-29 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件的制造方法 |
US7923746B2 (en) * | 2008-03-12 | 2011-04-12 | Industrial Technology Research Institute | Light emitting diode package structure and method for fabricating the same |
US8115218B2 (en) * | 2008-03-12 | 2012-02-14 | Industrial Technology Research Institute | Light emitting diode package structure and method for fabricating the same |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8877524B2 (en) | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
US7859000B2 (en) | 2008-04-10 | 2010-12-28 | Cree, Inc. | LEDs using single crystalline phosphor and methods of fabricating same |
EP2297762B1 (en) | 2008-05-06 | 2017-03-15 | Samsung Electronics Co., Ltd. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
WO2009136351A1 (en) * | 2008-05-07 | 2009-11-12 | Koninklijke Philips Electronics N.V. | Illumination device with led with a self-supporting grid containing luminescent material and method of making the self-supporting grid |
KR101431711B1 (ko) * | 2008-05-07 | 2014-08-21 | 삼성전자 주식회사 | 발광 장치 및 발광 시스템의 제조 방법, 상기 방법을이용하여 제조한 발광 장치 및 발광 시스템 |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
CN101320772B (zh) * | 2008-07-15 | 2010-06-02 | 电子科技大学 | 用于led封装的荧光粉分散体的制备及喷墨打印方法 |
CN105679922B (zh) * | 2008-10-01 | 2018-07-17 | 皇家飞利浦电子股份有限公司 | 用于增大的光提取和非黄色的断开状态颜色的在封装剂中具有颗粒的led |
WO2010038097A1 (en) * | 2008-10-01 | 2010-04-08 | Koninklijke Philips Electronics N.V. | Led with particles in encapsulant for increased light extraction and non-yellow off-state color |
JP5227135B2 (ja) | 2008-10-10 | 2013-07-03 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
US8342720B2 (en) | 2008-10-10 | 2013-01-01 | Stanley Electric Co., Ltd. | Vehicle light and road illumination device |
KR101521260B1 (ko) * | 2008-11-25 | 2015-05-18 | 삼성전자주식회사 | 발광 다이오드 패키지 및 이의 제조방법 |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US7897419B2 (en) | 2008-12-23 | 2011-03-01 | Cree, Inc. | Color correction for wafer level white LEDs |
US20100181582A1 (en) * | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
US8697458B2 (en) | 2009-04-22 | 2014-04-15 | Shat-R-Shield, Inc. | Silicone coated light-emitting diode |
MX2011011016A (es) * | 2009-04-22 | 2012-01-25 | Shat R Shield Inc | Diodo emisor de luz recubierto de silicona. |
CN101551068A (zh) * | 2009-04-30 | 2009-10-07 | 旭丽电子(广州)有限公司 | 一种发光二极管装置及其封装方法 |
US8597963B2 (en) * | 2009-05-19 | 2013-12-03 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
US8227276B2 (en) * | 2009-05-19 | 2012-07-24 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
US8227269B2 (en) * | 2009-05-19 | 2012-07-24 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
US20120092853A1 (en) | 2009-06-23 | 2012-04-19 | Koito Manufacturing Co., Ltd. | Light emitting module |
KR100963743B1 (ko) * | 2009-06-23 | 2010-06-14 | 한국광기술원 | 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법 |
US8384114B2 (en) | 2009-06-27 | 2013-02-26 | Cooledge Lighting Inc. | High efficiency LEDs and LED lamps |
FR2949165B1 (fr) * | 2009-08-11 | 2011-10-07 | Oberthur Technologies | Carte a microcircuit comprenant une diode electroluminescente |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
JP5349260B2 (ja) * | 2009-11-19 | 2013-11-20 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
US8466611B2 (en) | 2009-12-14 | 2013-06-18 | Cree, Inc. | Lighting device with shaped remote phosphor |
US8653539B2 (en) | 2010-01-04 | 2014-02-18 | Cooledge Lighting, Inc. | Failure mitigation in arrays of light-emitting devices |
US9480133B2 (en) | 2010-01-04 | 2016-10-25 | Cooledge Lighting Inc. | Light-emitting element repair in array-based lighting devices |
US8587187B2 (en) | 2010-12-06 | 2013-11-19 | Byoung GU Cho | Light diffusion of visible edge lines in a multi-dimensional modular display |
US9006754B2 (en) | 2010-01-26 | 2015-04-14 | Lightizer Korea Co. | Multichip light emitting diode (LED) and method of manufacture |
US8227274B2 (en) * | 2010-01-26 | 2012-07-24 | Lightizer Korea Co. | Light emitting diode (LED) and method of manufacture |
MY158950A (en) | 2010-02-19 | 2016-11-30 | Toray Industries | Phosphor-containing cured silicone, process for production of same, phosphor-containing silicone composition, precursor of the composition, sheets, led package, light-emitting device, and process for production of led-mounted substrate |
CN102714263B (zh) | 2010-02-25 | 2015-11-25 | 韩国莱太柘晶电株式会社 | 发光二极管及其制造方法 |
JP2011181793A (ja) | 2010-03-03 | 2011-09-15 | Koito Mfg Co Ltd | 発光装置 |
US8017417B1 (en) | 2010-03-31 | 2011-09-13 | Lightizer Korea Co. | Light emitting diode having a wavelength shift layer and method of manufacture |
US8993358B2 (en) * | 2011-12-28 | 2015-03-31 | Ledengin, Inc. | Deposition of phosphor on die top by stencil printing |
US8858022B2 (en) | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
US8399268B1 (en) * | 2011-12-28 | 2013-03-19 | Ledengin, Inc. | Deposition of phosphor on die top using dry film photoresist |
US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
JP5337106B2 (ja) | 2010-06-04 | 2013-11-06 | 株式会社東芝 | 半導体発光装置 |
KR101372084B1 (ko) | 2010-06-29 | 2014-03-07 | 쿨레지 라이팅 인크. | 항복형 기판을 갖는 전자 장치 |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US9515229B2 (en) | 2010-09-21 | 2016-12-06 | Cree, Inc. | Semiconductor light emitting devices with optical coatings and methods of making same |
US8410679B2 (en) | 2010-09-21 | 2013-04-02 | Cree, Inc. | Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface |
KR101719655B1 (ko) | 2010-09-29 | 2017-03-24 | 서울반도체 주식회사 | 형광체 시트, 형광체 시트를 갖는 발광장치 및 그 제조 방법 |
DE102010049312B4 (de) * | 2010-10-22 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Konversionsplättchens und Konversionsplättchen |
JP5953750B2 (ja) * | 2010-12-13 | 2016-07-20 | 東レ株式会社 | 蛍光体シート、これを用いたledおよび発光装置ならびにledの製造方法 |
KR101748334B1 (ko) | 2011-01-17 | 2017-06-16 | 삼성전자 주식회사 | 백색 발광 소자의 제조 방법 및 제조 장치 |
US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
JP5962102B2 (ja) * | 2011-03-24 | 2016-08-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US20140008685A1 (en) * | 2011-03-25 | 2014-01-09 | Koninklijke Philips N.V. | Patterned uv sensitive silicone-phosphor layer over leds |
KR101775375B1 (ko) | 2011-03-29 | 2017-09-06 | 삼성전자주식회사 | 반도체 발광소자 제조방법 및 이에 이용되는 페이스트 도포용 마스크 |
US8492182B2 (en) * | 2011-04-29 | 2013-07-23 | Osram Opto Semiconductors Gmbh | Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip |
KR101811689B1 (ko) * | 2011-07-06 | 2017-12-22 | 삼성전자주식회사 | 반도체 발광소자 제조방법 및 이에 이용되는 페이스트 도포장치 |
US8558252B2 (en) | 2011-08-26 | 2013-10-15 | Cree, Inc. | White LEDs with emission wavelength correction |
US8900892B2 (en) | 2011-12-28 | 2014-12-02 | Ledengin, Inc. | Printing phosphor on LED wafer using dry film lithography |
US9029879B2 (en) * | 2011-12-28 | 2015-05-12 | Ledengin, Inc. | Phosphor cap for LED die top and lateral surfaces |
JP5992695B2 (ja) | 2012-02-29 | 2016-09-14 | スタンレー電気株式会社 | 半導体発光素子アレイ及び車両用灯具 |
JP2013203762A (ja) * | 2012-03-27 | 2013-10-07 | Shin-Etsu Chemical Co Ltd | 波長変換部品及びその製造方法並びに発光装置 |
US9500355B2 (en) | 2012-05-04 | 2016-11-22 | GE Lighting Solutions, LLC | Lamp with light emitting elements surrounding active cooling device |
TWM439816U (en) * | 2012-05-17 | 2012-10-21 | Star Reach Corp | Display module |
US9929325B2 (en) | 2012-06-05 | 2018-03-27 | Samsung Electronics Co., Ltd. | Lighting device including quantum dots |
US9231178B2 (en) | 2012-06-07 | 2016-01-05 | Cooledge Lighting, Inc. | Wafer-level flip chip device packages and related methods |
US20140022623A1 (en) * | 2012-07-17 | 2014-01-23 | Chih-Chien YEN | Water proof display device consisting of epd and led matrix |
KR20140064393A (ko) | 2012-11-20 | 2014-05-28 | 서울반도체 주식회사 | 백라이트 유닛 |
CN102956797B (zh) * | 2012-11-23 | 2015-01-07 | 天津三安光电有限公司 | 发光二极管的制造方法 |
WO2014088322A1 (ko) | 2012-12-04 | 2014-06-12 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이를 제조하는 방법 |
US9234801B2 (en) | 2013-03-15 | 2016-01-12 | Ledengin, Inc. | Manufacturing method for LED emitter with high color consistency |
WO2014150263A1 (en) * | 2013-03-15 | 2014-09-25 | Ledengin, Inc. | Printing phosphor on led wafer using dry film lithography |
US9871167B2 (en) * | 2013-04-11 | 2018-01-16 | Koninklijke Philips N.V. | Top emitting semiconductor light emitting device |
JP6054526B2 (ja) * | 2013-05-28 | 2016-12-27 | シャープ株式会社 | 発光装置の製造方法 |
DE102013211634A1 (de) * | 2013-06-20 | 2014-12-24 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Konversionselements |
KR102222861B1 (ko) * | 2013-07-18 | 2021-03-04 | 루미리즈 홀딩 비.브이. | 고반사성 플립칩 led 다이 |
KR20160032236A (ko) * | 2013-07-19 | 2016-03-23 | 코닌클리케 필립스 엔.브이. | 광학 요소를 가지며 기판 캐리어를 갖지 않는 pc led |
JP6209949B2 (ja) | 2013-11-13 | 2017-10-11 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
DE102013224600A1 (de) * | 2013-11-29 | 2015-06-03 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
US20150226385A1 (en) * | 2014-02-11 | 2015-08-13 | Cree, Inc. | Systems and Methods for Application of Coatings Including Thixotropic Agents onto Optical Elements, and Optical Elements Having Coatings Including Thixotropic Agents |
US10249599B2 (en) * | 2016-06-29 | 2019-04-02 | eLux, Inc. | Laminated printed color conversion phosphor sheets |
JP2017034218A (ja) | 2015-08-03 | 2017-02-09 | 株式会社東芝 | 半導体発光装置 |
US10598318B1 (en) * | 2016-06-14 | 2020-03-24 | Eaton Intelligent Power Limited | Light source and method for making a light source |
US10319889B2 (en) * | 2016-12-27 | 2019-06-11 | Nichia Corporation | Light emitting device |
US10014450B1 (en) | 2017-02-09 | 2018-07-03 | Asm Technology Singapore Pte Ltd | Method for manufacturing a light emitting diode device and the light emitting diode device so manufactured |
US10319705B2 (en) | 2017-10-20 | 2019-06-11 | Facebook Technologies, Llc | Elastomeric layer fabrication for light emitting diodes |
KR101994440B1 (ko) * | 2017-11-03 | 2019-06-28 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 차량용 램프 |
CN110197867A (zh) | 2018-02-26 | 2019-09-03 | 世迈克琉明有限公司 | 半导体发光器件及其制造方法 |
TWI684028B (zh) * | 2018-03-28 | 2020-02-01 | 世界先進積體電路股份有限公司 | 半導體裝置及其形成方法 |
CN110379883B (zh) * | 2018-04-10 | 2021-04-20 | 世界先进积体电路股份有限公司 | 半导体装置及其形成方法 |
US11313671B2 (en) | 2019-05-28 | 2022-04-26 | Mitutoyo Corporation | Chromatic confocal range sensing system with enhanced spectrum light source configuration |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4774435A (en) * | 1987-12-22 | 1988-09-27 | Gte Laboratories Incorporated | Thin film electroluminescent device |
US4897319A (en) * | 1988-07-19 | 1990-01-30 | Planar Systems, Inc. | TFEL device having multiple layer insulators |
JP2708183B2 (ja) * | 1988-07-21 | 1998-02-04 | シャープ株式会社 | 化合物半導体発光素子 |
US5325483A (en) * | 1989-04-07 | 1994-06-28 | Hitachi, Ltd. | Image information retrieval network system |
US5229628A (en) * | 1989-08-02 | 1993-07-20 | Nippon Sheet Glass Co., Ltd. | Electroluminescent device having sub-interlayers for high luminous efficiency with device life |
US5072301A (en) * | 1990-03-12 | 1991-12-10 | Zenith Electronics Corporation | Apparatus and process for implosion protection in cathode ray tubes |
US5391876A (en) * | 1990-06-29 | 1995-02-21 | General Electric Company | Hole-trap-compensated scintillator material and computed tomography machine containing the same |
US5207948A (en) * | 1991-02-11 | 1993-05-04 | Gte Products Corporation | Stir-in fluorescent lamp phosphor and method of making same |
EP0596548B1 (en) * | 1992-09-23 | 1998-12-16 | Koninklijke Philips Electronics N.V. | Low-pressure mercury discharge lamp |
US5403746A (en) * | 1993-11-30 | 1995-04-04 | Minnesota Mining And Manufacturing Company | Sensor with improved drift stability |
US6117294A (en) * | 1996-01-19 | 2000-09-12 | Micron Technology, Inc. | Black matrix material and methods related thereto |
KR100643442B1 (ko) * | 1996-06-26 | 2006-11-10 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
DE19638667C2 (de) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
GB9621196D0 (en) * | 1996-10-11 | 1996-11-27 | Ciba Geigy Ag | Curable resin compositions |
US6263486B1 (en) * | 1996-11-22 | 2001-07-17 | International Business Machines Corp. | Method and system for dynamic connections with intelligent default events and actions in an application development environment |
US6546426B1 (en) * | 1997-03-21 | 2003-04-08 | International Business Machines Corporation | Method and apparatus for efficiently processing an audio and video data stream |
US6192354B1 (en) * | 1997-03-21 | 2001-02-20 | International Business Machines Corporation | Apparatus and method for optimizing the performance of computer tasks using multiple intelligent agents having varied degrees of domain knowledge |
US5813753A (en) | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US6319425B1 (en) * | 1997-07-07 | 2001-11-20 | Asahi Rubber Inc. | Transparent coating member for light-emitting diodes and a fluorescent color light source |
US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
US6252254B1 (en) | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US6207077B1 (en) * | 2000-02-18 | 2001-03-27 | Orion 21 A.D. Pty Ltd | Luminescent gel coats and moldable resins |
US6404125B1 (en) * | 1998-10-21 | 2002-06-11 | Sarnoff Corporation | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
US6373188B1 (en) | 1998-12-22 | 2002-04-16 | Honeywell International Inc. | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
JP2000208822A (ja) * | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
US6351069B1 (en) * | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
US6413790B1 (en) * | 1999-07-21 | 2002-07-02 | E Ink Corporation | Preferred methods for producing electrical circuit elements used to control an electronic display |
JP4406490B2 (ja) * | 2000-03-14 | 2010-01-27 | 株式会社朝日ラバー | 発光ダイオード |
US6417019B1 (en) * | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
-
2000
- 2000-10-13 US US09/688,053 patent/US6650044B1/en not_active Expired - Lifetime
-
2001
- 2001-10-04 EP EP01203771.9A patent/EP1198016B1/en not_active Expired - Lifetime
- 2001-10-05 JP JP2001310121A patent/JP4208449B2/ja not_active Expired - Lifetime
- 2001-10-10 KR KR1020010062305A patent/KR100951096B1/ko active IP Right Grant
-
2003
- 2003-11-06 US US10/703,040 patent/US7049159B2/en not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101068649B1 (ko) * | 2004-09-01 | 2011-09-28 | 에피스타 코포레이션 | 반도체 발광 소자 및 그 형성 방법 |
KR100826426B1 (ko) * | 2006-02-22 | 2008-04-29 | 삼성전기주식회사 | 발광다이오드 패키지 |
US9166123B2 (en) | 2006-08-08 | 2015-10-20 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
KR100866879B1 (ko) * | 2006-12-19 | 2008-11-04 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
KR101318913B1 (ko) * | 2007-04-30 | 2013-10-17 | 트리도닉 예너스도르프 게엠베하 | 균일한 색 분포를 위해 설계된 색변환층을 갖는 led 모듈 |
WO2011016650A2 (ko) * | 2009-08-03 | 2011-02-10 | 주식회사 동진쎄미켐 | 광학소자의 투광부 패키지 방법 및 장치 |
WO2011016650A3 (ko) * | 2009-08-03 | 2011-04-28 | 주식회사 동진쎄미켐 | 광학소자의 투광부 패키지 방법 및 장치 |
KR101007145B1 (ko) * | 2010-01-14 | 2011-01-10 | 엘지이노텍 주식회사 | 발광소자 칩, 발광소자 패키지 및 발광소자 칩의 제조방법 |
US9136445B2 (en) | 2010-01-14 | 2015-09-15 | Lg Innotek Co., Ltd. | Light emitting device chip, light emitting device package |
US8546159B2 (en) | 2010-08-25 | 2013-10-01 | Samsung Electronics Co., Ltd. | Phosphor film, method of forming the same, and method of coating phosphor layer on LED chips |
KR20150036383A (ko) * | 2012-07-05 | 2015-04-07 | 코닌클리케 필립스 엔.브이. | 투명한 스페이서에 의해 led로부터 분리된 인광체 |
Also Published As
Publication number | Publication date |
---|---|
EP1198016A2 (en) | 2002-04-17 |
US20040097006A1 (en) | 2004-05-20 |
JP4208449B2 (ja) | 2009-01-14 |
US7049159B2 (en) | 2006-05-23 |
EP1198016A3 (en) | 2007-10-17 |
JP2002185048A (ja) | 2002-06-28 |
US6650044B1 (en) | 2003-11-18 |
EP1198016B1 (en) | 2017-05-31 |
KR100951096B1 (ko) | 2010-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100951096B1 (ko) | 발광 반도체 디바이스 상에 형광 층을 형성하는 방법 및 형광 스텐실링 합성물 | |
US6642652B2 (en) | Phosphor-converted light emitting device | |
US9818919B2 (en) | LED package with multiple element light source and encapsulant having planar surfaces | |
US9887327B2 (en) | LED package with encapsulant having curved and planar surfaces | |
JP7414886B2 (ja) | 発光素子及びその製造方法 | |
KR20180127292A (ko) | 경사 반사기를 갖는 발광 디바이스 및 그 제조 방법 | |
US10424702B2 (en) | Compact LED package with reflectivity layer | |
US20130328074A1 (en) | Led package with multiple element light source and encapsulant having planar surfaces | |
US20150179901A1 (en) | Method of fabricating white led devices | |
KR20090116461A (ko) | 발광 장치 및 발광 시스템의 제조 방법, 상기 방법을이용하여 제조한 발광 장치 및 발광 시스템 | |
US8974852B2 (en) | Method of manufacturing light-emitting device with fluorescent layer | |
JP2000022222A (ja) | 発光ダイオード | |
US8138509B2 (en) | Light emitting device having luminescent layer with opening to exposed bond pad on light emitting die for wire bonding pad to substrate | |
JP2014086549A (ja) | 半導体発光装置およびその製造方法 | |
KR20130093640A (ko) | 발광 변환 물질 층을 형성하는 방법, 발광 변환 물질 층을 위한 조성물 및 발광 변환 물질 층을 포함하는 소자 | |
JP2007294894A (ja) | 発光装置およびその製造方法 | |
JP5330855B2 (ja) | 半導体発光装置 | |
US20150200336A1 (en) | Wafer level contact pad standoffs with integrated reflector | |
JP2000031530A (ja) | 半導体発光装置およびその製造方法 | |
JP5148126B2 (ja) | 色変換発光素子とその製造方法 | |
US20210191031A1 (en) | Method for manufacturing light-emitting module | |
EP3028302B1 (en) | Light emitting diode package with encapsulant having curved and planar surfaces | |
US9954144B2 (en) | Wafer level contact pad solder bumping for surface mount devices with non-planar recessed contacting surfaces | |
US11662512B2 (en) | Light-emitting module | |
US20220173283A1 (en) | Light-emitting device and planar light source |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20080829 Effective date: 20091120 |
|
S901 | Examination by remand of revocation | ||
GRNO | Decision to grant (after opposition) | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130326 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20140320 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160406 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170323 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180313 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20190314 Year of fee payment: 10 |