JP2014086549A - 半導体発光装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 123
- 229920005989 resin Polymers 0.000 claims abstract description 110
- 239000011347 resin Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000011521 glass Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 204
- 238000009826 distribution Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
【解決手段】透光性樹脂層3の側面8は、素子基板1の端部と蛍光体含有層4の側面とを結ぶように傾斜している。この透光性樹脂層3の傾斜した側面8は、蛍光体含有層4の端面も覆っている。蛍光体含有層4の厚さが一様であるため、上面の色むらを防止できる。また、蛍光体含有層4の端面から出射される蛍光を、透光性樹脂層3内を進行する半導体エピタキシャル層2からの光と混合して、側面8から出射させることができる。よって、正面光の色むらが小さく、かつ、出射角による色むらも小さい半導体発光装置が得られる。
【選択図】図1
Description
図1(a)、(b)に第1の実施形態の半導体発光装置の断面図と上面図をそれぞれ示す。本実施形態の半導体発光装置は、発光構造を含む半導体エピタキシャル層2と、半導体エピタキシャル層2を支持する素子基板1と、半導体エピタキシャル層2を覆うように素子基板1上に配置された透光性樹脂層3と、透光性樹脂層3上に配置された平坦かつ一様な厚さの蛍光体含有層4とを備えて構成される。素子基板1は、半導体エピタキシャル層2の発する光を透過しない構造である。素子基板1は、接着層10により実装基板7に搭載されている。
図5に示すように、第2の実施形態では、蛍光体含有層4が、透光性板状部材41の下面に支持されている。透光性板状部材41は、半導体エピタキシャル層2の発する光と蛍光体含有層4が発する蛍光の両方に透明である。
Claims (7)
- 発光構造を含む半導体エピタキシャル層と、前記半導体エピタキシャル層を支持し、前記半導体エピタキシャル層の発する光を透過しない素子基板と、前記半導体エピタキシャル層を覆うように前記素子基板上に配置された透光性樹脂層と、前記透光性樹脂層の上に配置された、平坦かつ一様な厚さの蛍光体含有層とを有し、
前記半導体エピタキシャル層および前記蛍光体含有層は、前記素子基板の上面よりも小さく、前記透光性樹脂層は、前記素子基板の端部と前記蛍光体含有層の側面とを結ぶ傾斜した側面を有し、前記透光性樹脂層の側面は、前記蛍光体含有層の端面を覆っていることを特徴とする半導体発光装置。 - 請求項1に記載の半導体発光装置において、前記蛍光体含有層の大きさは、前記半導体エピタキシャル層と同等もしくはそれ以下であることを特徴とする半導体発光装置。
- 請求項1または2に記載の半導体発光装置において、前記蛍光体含有層は、蛍光体含有樹脂で構成されたシート、蛍光体を含有する焼結体で構成された板状部材および蛍光ガラスで構成された板状部材のいずれかを含むことを特徴とする半導体発光装置。
- 請求項1または2に記載の半導体発光装置において、前記蛍光体含有層は、透光性板状部材の下面に支持されていることを特徴とする半導体発光装置。
- 請求項4に記載の半導体発光装置において、前記透光性樹脂層の側面は、前記蛍光体含有層の端面のみならず前記透光性板状部材の端面も覆っていることを特徴とする半導体発光装置。
- 請求項1ないし5のいずれか1項に記載の半導体発光装置において、前記透光性樹脂層の側面は、外向きに凸に湾曲していることを特徴とする半導体発光装置。
- 発光構造を含む半導体エピタキシャル層が備えられた、光を透過しない素子基板の上に、前記半導体エピタキシャル層を覆うように未硬化の透光性樹脂を塗布する工程と、
前記未硬化の透光性樹脂の上に、前記素子基板の上面よりも小さな、シート状または板状の蛍光体含有層を搭載することにより、前記未硬化の透光性樹脂の形状を、前記素子基板の端部と前記蛍光体含有層の側面とを結び、かつ、前記蛍光体含有層の端面を覆う、傾斜した側面を有する形状にする工程と、
前記未硬化の透光性樹脂を硬化させる工程とを有することを特徴とする半導体発光装置の製造方法。
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JP2012234038A JP6215525B2 (ja) | 2012-10-23 | 2012-10-23 | 半導体発光装置 |
US14/059,656 US9147814B2 (en) | 2012-10-23 | 2013-10-22 | Semiconductor light-emitting device and manufacturing method |
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EP3496144A1 (en) | 2017-12-06 | 2019-06-12 | Stanley Electric Co., Ltd. | Semiconductor light-emitting apparatus having multiple semiconductor light-emitting elements and its manufacturing method |
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JP2022056551A (ja) * | 2020-09-30 | 2022-04-11 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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KR20150129356A (ko) * | 2014-05-12 | 2015-11-20 | 엘지이노텍 주식회사 | 발광 장치 |
JP2016092364A (ja) | 2014-11-11 | 2016-05-23 | スタンレー電気株式会社 | 発光装置及び灯具 |
JP6564206B2 (ja) | 2015-03-09 | 2019-08-21 | スタンレー電気株式会社 | 発光装置 |
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JP7288343B2 (ja) * | 2019-05-16 | 2023-06-07 | スタンレー電気株式会社 | 発光装置 |
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US10741738B2 (en) | 2017-12-06 | 2020-08-11 | Stanley Electric Co., Ltd. | Semiconductor light-emitting apparatus having multiple semiconductor light-emitting elements and its manufacturing method |
WO2019162998A1 (ja) * | 2018-02-20 | 2019-08-29 | 三菱電機株式会社 | アブソリュートエンコーダ |
JP2022056551A (ja) * | 2020-09-30 | 2022-04-11 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7332896B2 (ja) | 2020-09-30 | 2023-08-24 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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