KR101390115B1 - Ｌｅｄ 칩의 제조 방법 - Google Patents

Ｌｅｄ 칩의 제조 방법 Download PDF

Info

Publication number: KR101390115B1
Authority: KR; South Korea
Prior art keywords: laser; substrate; light; laser beam; film
Prior art date: 2011-01-25

Application number

KR1020110139660A

Other languages

English (en)

Korean (ko)

Other versions

KR20120086241A (ko

Inventor

이꾸요시 나까따니

나오야 기야마

Original Assignee

미쓰보시 다이야몬도 고교 가부시키가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-01-25

Filing date

2011-12-22

Publication date

2014-04-28

2011-12-22 Application filed by 미쓰보시 다이야몬도 고교 가부시키가이샤 filed Critical 미쓰보시 다이야몬도 고교 가부시키가이샤

2012-08-02 Publication of KR20120086241A publication Critical patent/KR20120086241A/ko

2014-04-28 Application granted granted Critical

2014-04-28 Publication of KR101390115B1 publication Critical patent/KR101390115B1/ko

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 22
239000000758 substrate Substances 0.000 claims abstract description 71
230000001678 irradiating effect Effects 0.000 claims abstract description 5
238000000034 method Methods 0.000 claims description 27
229910052594 sapphire Inorganic materials 0.000 claims description 17
239000010980 sapphire Substances 0.000 claims description 17
238000002834 transmittance Methods 0.000 claims description 6
239000000463 material Substances 0.000 abstract description 24
239000010408 film Substances 0.000 description 70
239000010410 layer Substances 0.000 description 14
238000010521 absorption reaction Methods 0.000 description 7
239000004065 semiconductor Substances 0.000 description 7
230000015572 biosynthetic process Effects 0.000 description 6
229910002704 AlGaN Inorganic materials 0.000 description 4
238000005299 abrasion Methods 0.000 description 4
230000006866 deterioration Effects 0.000 description 4
238000004090 dissolution Methods 0.000 description 4
238000002844 melting Methods 0.000 description 4
230000008018 melting Effects 0.000 description 4
239000000047 product Substances 0.000 description 4
238000010586 diagram Methods 0.000 description 3
238000000608 laser ablation Methods 0.000 description 3
238000002679 ablation Methods 0.000 description 2
229910003460 diamond Inorganic materials 0.000 description 2
239000010432 diamond Substances 0.000 description 2
238000000605 extraction Methods 0.000 description 2
239000011521 glass Substances 0.000 description 2
239000002184 metal Substances 0.000 description 2
150000004767 nitrides Chemical class 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
239000012466 permeate Substances 0.000 description 2
239000011148 porous material Substances 0.000 description 2
238000003672 processing method Methods 0.000 description 2
238000000926 separation method Methods 0.000 description 2
238000001228 spectrum Methods 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 1
238000005452 bending Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000000295 emission spectrum Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
230000011218 segmentation Effects 0.000 description 1
239000002356 single layer Substances 0.000 description 1
238000000859 sublimation Methods 0.000 description 1
230000008022 sublimation Effects 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
230000003746 surface roughness Effects 0.000 description 1
239000010409 thin film Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Dicing (AREA)
Laser Beam Processing (AREA)
Led Devices (AREA)

KR1020110139660A 2011-01-25 2011-12-22 Ｌｅｄ 칩의 제조 방법 KR101390115B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JPJP-P-2011-012547		2011-01-25
JP2011012547A JP5548143B2 (ja)	2011-01-25	2011-01-25	Ｌｅｄチップの製造方法

Publications (2)

Publication Number	Publication Date
KR20120086241A KR20120086241A (ko)	2012-08-02
KR101390115B1 true KR101390115B1 (ko)	2014-04-28

Family

ID=46527963

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020110139660A KR101390115B1 (ko)	2011-01-25	2011-12-22	Ｌｅｄ 칩의 제조 방법

Country Status (4)

Country	Link
JP (1)	JP5548143B2 (ja)
KR (1)	KR101390115B1 (ja)
CN (1)	CN102610711B (ja)
TW (1)	TWI447964B (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5658043B2 (ja) *	2011-01-07	2015-01-21	株式会社ディスコ	分割方法
JP2012238746A (ja) *	2011-05-12	2012-12-06	Disco Abrasive Syst Ltd	光デバイスウエーハの分割方法
JP6423135B2 (ja) *	2012-11-29	2018-11-14	三星ダイヤモンド工業株式会社	パターン付き基板の分割方法
TWI483802B (zh) *	2012-12-14	2015-05-11	Ind Tech Res Inst	雷射加工裝置及其方法
CN103934567A (zh) *	2013-01-21	2014-07-23	均豪精密工业股份有限公司	激光加工***及其方法
JP6405556B2 (ja)	2013-07-31	2018-10-17	リンテック株式会社	保護膜形成フィルム、保護膜形成用シートおよび検査方法
JP6241174B2 (ja) *	2013-09-25	2017-12-06	三星ダイヤモンド工業株式会社	レーザー加工装置、および、パターン付き基板の加工条件設定方法
SG11201605781WA (en) *	2014-01-22	2016-09-29	Lintec Corp	Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and inspection method
US9953856B2 (en)	2014-01-22	2018-04-24	Lintec Corporation	Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and method of producing manufactured product
JP6562014B2 (ja) *	2017-02-20	2019-08-21	日亜化学工業株式会社	発光素子の製造方法
JP6228343B1 (ja) *	2017-06-20	2017-11-08	リンテック株式会社	保護膜形成フィルム、保護膜形成用シートおよび検査方法
JP6401364B2 (ja) *	2017-10-12	2018-10-10	リンテック株式会社	保護膜形成用複合シートおよびレーザー印字方法
JP2018026597A (ja) *	2017-11-16	2018-02-15	ローム株式会社	発光素子および発光素子パッケージ
KR102152007B1 (ko) *	2020-03-18	2020-09-04	주식회사 탑 엔지니어링	기판 절단 방법 및 기판 절단 장치
CN113695748B (zh) *	2021-08-23	2022-10-25	西安交通大学	一种基于空间光调制器的鲨鱼皮表面结构快速制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10270754A (ja) *	1997-03-24	1998-10-09	Sanyo Electric Co Ltd	半導体発光素子および発光ランプ
JPH10308532A (ja) *	1997-05-06	1998-11-17	Sony Corp	半導体発光素子
JP2005064426A (ja)	2003-08-20	2005-03-10	Mitsubishi Cable Ind Ltd	窒化物系半導体素子の製造方法
JP2005271563A (ja)	2004-03-26	2005-10-06	Daitron Technology Co Ltd	硬脆材料板体の分割加工方法及び装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB9511841D0 (en) *	1995-06-10	1995-08-09	Pilkington Glass Ltd	Mirrors and their production
JP3604550B2 (ja) *	1997-12-16	2004-12-22	日亜化学工業株式会社	窒化物半導体素子の製造方法
JP4659300B2 (ja) *	2000-09-13	2011-03-30	浜松ホトニクス株式会社	レーザ加工方法及び半導体チップの製造方法
JP3895287B2 (ja) *	2003-03-06	2007-03-22	弘明三澤	サファイア基板の分割方法及び分割装置

2011
- 2011-01-25 JP JP2011012547A patent/JP5548143B2/ja not_active Expired - Fee Related
- 2011-09-06 TW TW100132143A patent/TWI447964B/zh not_active IP Right Cessation
- 2011-10-24 CN CN201110329555.7A patent/CN102610711B/zh not_active Expired - Fee Related
- 2011-12-22 KR KR1020110139660A patent/KR101390115B1/ko not_active IP Right Cessation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10270754A (ja) *	1997-03-24	1998-10-09	Sanyo Electric Co Ltd	半導体発光素子および発光ランプ
JPH10308532A (ja) *	1997-05-06	1998-11-17	Sony Corp	半導体発光素子
JP2005064426A (ja)	2003-08-20	2005-03-10	Mitsubishi Cable Ind Ltd	窒化物系半導体素子の製造方法
JP2005271563A (ja)	2004-03-26	2005-10-06	Daitron Technology Co Ltd	硬脆材料板体の分割加工方法及び装置

Also Published As

Publication number	Publication date
JP2012156217A (ja)	2012-08-16
TW201232836A (en)	2012-08-01
KR20120086241A (ko)	2012-08-02
CN102610711B (zh)	2015-04-08
JP5548143B2 (ja)	2014-07-16
CN102610711A (zh)	2012-07-25
TWI447964B (zh)	2014-08-01

Legal Events

Date	Code	Title	Description
2011-12-22	A201	Request for examination
2012-12-05	E902	Notification of reason for refusal
2013-02-05	AMND	Amendment
2013-06-20	E902	Notification of reason for refusal
2013-12-26	E601	Decision to refuse application
2014-02-28	AMND	Amendment
2014-03-28	X701	Decision to grant (after re-examination)
2014-04-22	GRNT	Written decision to grant
2017-03-17	FPAY	Annual fee payment	Payment date: 20170317 Year of fee payment: 4
2018-04-23	LAPS	Lapse due to unpaid annual fee

Publication	Publication Date	Title
KR101390115B1 (ko)	2014-04-28	Ｌｅｄ 칩의 제조 방법
TWI380867B (zh)	2013-01-01	Laser processing methods and semiconductor wafers
JP4907984B2 (ja)	2012-04-04	レーザ加工方法及び半導体チップ
JP4198123B2 (ja)	2008-12-17	レーザ加工方法
JP6260601B2 (ja)	2018-01-17	半導体素子の製造方法
JP4829781B2 (ja)	2011-12-07	レーザ加工方法及び半導体チップ
KR101109860B1 (ko)	2012-02-21	레이저 가공 방법, 가공 대상물 절단 방법 및 반도체 장치
JP4536407B2 (ja)	2010-09-01	レーザ加工方法及び加工対象物
US20070298529A1 (en)	2007-12-27	Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
CN102405520A (zh)	2012-04-04	用于在玻璃基板上的芯片等级封装的镭射切割的方法
JP2006245062A (ja)	2006-09-14	Ｉｉｉ族窒化物系化合物半導体素子の製造方法及び発光素子
EP1811550A1 (en)	2007-07-25	Laser processing method
JPWO2005098916A1 (ja)	2008-03-06	レーザ加工方法及び半導体チップ
KR20080050547A (ko)	2008-06-09	레이저 가공 방법 및 레이저 가공 장치
CN102317030A (zh)	2012-01-11	激光加工装置以及激光加工方法
JP2006245043A (ja)	2006-09-14	Ｉｉｉ族窒化物系化合物半導体素子の製造方法及び発光素子
JP2007142001A (ja)	2007-06-07	レーザ加工装置およびレーザ加工方法
WO2014134470A1 (en)	2014-09-04	Laser system and method for processing sapphire
JP2005109432A (ja)	2005-04-21	Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP5177992B2 (ja)	2013-04-10	加工対象物切断方法
JP2005012203A (ja)	2005-01-13	レーザ加工方法
JP2008068319A (ja)	2008-03-27	レーザ加工方法及びチップ
JP2003151921A (ja)	2003-05-23	化合物半導体とその製造方法
JP5122161B2 (ja)	2013-01-16	加工対象物切断方法
JP7277782B2 (ja)	2023-05-19	半導体素子の製造方法