TWI447964B - LED wafer manufacturing method - Google Patents

LED wafer manufacturing method Download PDF

Info

Publication number: TWI447964B
Authority: TW; Taiwan
Prior art keywords: led; reflective film; laser; substrate; manufacturing
Prior art date: 2011-01-25

Application number

TW100132143A

Other languages

English (en)

Chinese (zh)

Other versions

TW201232836A (en

Original Assignee

Mitsuboshi Diamond Ind Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-01-25

Filing date

2011-09-06

Publication date

2014-08-01

2011-09-06 Application filed by Mitsuboshi Diamond Ind Co Ltd filed Critical Mitsuboshi Diamond Ind Co Ltd

2012-08-01 Publication of TW201232836A publication Critical patent/TW201232836A/zh

2014-08-01 Application granted granted Critical

2014-08-01 Publication of TWI447964B publication Critical patent/TWI447964B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 23
239000000758 substrate Substances 0.000 claims description 49
239000010980 sapphire Substances 0.000 claims description 18
229910052594 sapphire Inorganic materials 0.000 claims description 18
230000001678 irradiating effect Effects 0.000 claims description 4
238000002834 transmittance Methods 0.000 claims description 3
239000010408 film Substances 0.000 description 68
239000000463 material Substances 0.000 description 25
235000012431 wafers Nutrition 0.000 description 17
239000010410 layer Substances 0.000 description 15
238000000034 method Methods 0.000 description 13
238000002679 ablation Methods 0.000 description 8
239000004065 semiconductor Substances 0.000 description 8
238000010521 absorption reaction Methods 0.000 description 7
229910002704 AlGaN Inorganic materials 0.000 description 4
238000004090 dissolution Methods 0.000 description 4
238000000608 laser ablation Methods 0.000 description 3
238000003672 processing method Methods 0.000 description 3
238000001228 spectrum Methods 0.000 description 3
229910003460 diamond Inorganic materials 0.000 description 2
239000010432 diamond Substances 0.000 description 2
239000011521 glass Substances 0.000 description 2
239000000155 melt Substances 0.000 description 2
238000002844 melting Methods 0.000 description 2
230000008018 melting Effects 0.000 description 2
239000002184 metal Substances 0.000 description 2
150000004767 nitrides Chemical class 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
239000011148 porous material Substances 0.000 description 2
230000011218 segmentation Effects 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
238000005452 bending Methods 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000002950 deficient Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000000227 grinding Methods 0.000 description 1
238000005286 illumination Methods 0.000 description 1
230000006698 induction Effects 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000003754 machining Methods 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
238000000859 sublimation Methods 0.000 description 1
230000008022 sublimation Effects 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
230000003746 surface roughness Effects 0.000 description 1
239000010409 thin film Substances 0.000 description 1
230000005068 transpiration Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Dicing (AREA)
Laser Beam Processing (AREA)
Led Devices (AREA)

TW100132143A 2011-01-25 2011-09-06 LED wafer manufacturing method TWI447964B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2011012547A JP5548143B2 (ja)	2011-01-25	2011-01-25	Ｌｅｄチップの製造方法

Publications (2)

Publication Number	Publication Date
TW201232836A TW201232836A (en)	2012-08-01
TWI447964B true TWI447964B (zh)	2014-08-01

Family

ID=46527963

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW100132143A TWI447964B (zh)	2011-01-25	2011-09-06	LED wafer manufacturing method

Country Status (4)

Country	Link
JP (1)	JP5548143B2 (ja)
KR (1)	KR101390115B1 (ja)
CN (1)	CN102610711B (ja)
TW (1)	TWI447964B (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5658043B2 (ja) *	2011-01-07	2015-01-21	株式会社ディスコ	分割方法
JP2012238746A (ja) *	2011-05-12	2012-12-06	Disco Abrasive Syst Ltd	光デバイスウエーハの分割方法
JP6423135B2 (ja) *	2012-11-29	2018-11-14	三星ダイヤモンド工業株式会社	パターン付き基板の分割方法
TWI483802B (zh) *	2012-12-14	2015-05-11	Ind Tech Res Inst	雷射加工裝置及其方法
CN103934567A (zh) *	2013-01-21	2014-07-23	均豪精密工业股份有限公司	激光加工***及其方法
JP6405556B2 (ja)	2013-07-31	2018-10-17	リンテック株式会社	保護膜形成フィルム、保護膜形成用シートおよび検査方法
JP6241174B2 (ja) *	2013-09-25	2017-12-06	三星ダイヤモンド工業株式会社	レーザー加工装置、および、パターン付き基板の加工条件設定方法
SG11201605781WA (en) *	2014-01-22	2016-09-29	Lintec Corp	Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and inspection method
US9953856B2 (en)	2014-01-22	2018-04-24	Lintec Corporation	Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and method of producing manufactured product
JP6562014B2 (ja) *	2017-02-20	2019-08-21	日亜化学工業株式会社	発光素子の製造方法
JP6228343B1 (ja) *	2017-06-20	2017-11-08	リンテック株式会社	保護膜形成フィルム、保護膜形成用シートおよび検査方法
JP6401364B2 (ja) *	2017-10-12	2018-10-10	リンテック株式会社	保護膜形成用複合シートおよびレーザー印字方法
JP2018026597A (ja) *	2017-11-16	2018-02-15	ローム株式会社	発光素子および発光素子パッケージ
KR102152007B1 (ko) *	2020-03-18	2020-09-04	주식회사 탑 엔지니어링	기판 절단 방법 및 기판 절단 장치
CN113695748B (zh) *	2021-08-23	2022-10-25	西安交通大学	一种基于空间光调制器的鲨鱼皮表面结构快速制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW326437B (en) *	1995-06-10	1998-02-11	Pilkington Glass Ltd	A back surface mirror comprising a reflect coating and reflecting enhancing layers and method for producing the same
JP2002192367A (ja) *	2000-09-13	2002-07-10	Hamamatsu Photonics Kk	レーザ加工方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3439063B2 (ja) *	1997-03-24	2003-08-25	三洋電機株式会社	半導体発光素子および発光ランプ
JP3769872B2 (ja) *	1997-05-06	2006-04-26	ソニー株式会社	半導体発光素子
JP3604550B2 (ja) *	1997-12-16	2004-12-22	日亜化学工業株式会社	窒化物半導体素子の製造方法
JP3895287B2 (ja) *	2003-03-06	2007-03-22	弘明三澤	サファイア基板の分割方法及び分割装置
JP4279631B2 (ja) *	2003-08-20	2009-06-17	三菱化学株式会社	窒化物系半導体素子の製造方法
JP2005271563A (ja) *	2004-03-26	2005-10-06	Daitron Technology Co Ltd	硬脆材料板体の分割加工方法及び装置

2011
- 2011-01-25 JP JP2011012547A patent/JP5548143B2/ja not_active Expired - Fee Related
- 2011-09-06 TW TW100132143A patent/TWI447964B/zh not_active IP Right Cessation
- 2011-10-24 CN CN201110329555.7A patent/CN102610711B/zh not_active Expired - Fee Related
- 2011-12-22 KR KR1020110139660A patent/KR101390115B1/ko not_active IP Right Cessation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW326437B (en) *	1995-06-10	1998-02-11	Pilkington Glass Ltd	A back surface mirror comprising a reflect coating and reflecting enhancing layers and method for producing the same
JP2002192367A (ja) *	2000-09-13	2002-07-10	Hamamatsu Photonics Kk	レーザ加工方法

Also Published As

Publication number	Publication date
KR101390115B1 (ko)	2014-04-28
JP2012156217A (ja)	2012-08-16
TW201232836A (en)	2012-08-01
KR20120086241A (ko)	2012-08-02
CN102610711B (zh)	2015-04-08
JP5548143B2 (ja)	2014-07-16
CN102610711A (zh)	2012-07-25

Legal Events

Date	Code	Title	Description
2018-05-01	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TWI447964B (zh)	2014-08-01	LED wafer manufacturing method
TWI380867B (zh)	2013-01-01	Laser processing methods and semiconductor wafers
US8609512B2 (en)	2013-12-17	Method for laser singulation of chip scale packages on glass substrates
JP6260601B2 (ja)	2018-01-17	半導体素子の製造方法
TWI623111B (zh)	2018-05-01	發光元件的製造方法
KR101802527B1 (ko)	2017-11-28	가공 대상물 절단 방법
JP4829781B2 (ja)	2011-12-07	レーザ加工方法及び半導体チップ
US7939430B2 (en)	2011-05-10	Laser processing method
JP4907984B2 (ja)	2012-04-04	レーザ加工方法及び半導体チップ
US20070298529A1 (en)	2007-12-27	Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
US20110287607A1 (en)	2011-11-24	Method and apparatus for improved wafer singulation
JP2006263754A (ja)	2006-10-05	レーザ加工方法
JPWO2005098916A1 (ja)	2008-03-06	レーザ加工方法及び半導体チップ
JP2005109432A (ja)	2005-04-21	Ｉｉｉ族窒化物系化合物半導体素子の製造方法
KR20150044851A (ko)	2015-04-27	가공 대상물 절단 방법
JP2018120986A (ja)	2018-08-02	発光素子の製造方法
JP2005012203A (ja)	2005-01-13	レーザ加工方法
JP6318900B2 (ja)	2018-05-09	半導体発光素子の製造方法
JP2003151921A (ja)	2003-05-23	化合物半導体とその製造方法
JP7089204B2 (ja)	2022-06-22	発光装置の製造方法
JP7277782B2 (ja)	2023-05-19	半導体素子の製造方法
TW202022938A (zh)	2020-06-16	抑制缺陷的開槽方式
JP2014058425A (ja)	2014-04-03	レーザ加工方法