KR101131892B1 - 매립 게이트를 갖는 반도체 장치 및 그의 제조 방법 - Google Patents
매립 게이트를 갖는 반도체 장치 및 그의 제조 방법 Download PDFInfo
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- KR101131892B1 KR101131892B1 KR20100029611A KR20100029611A KR101131892B1 KR 101131892 B1 KR101131892 B1 KR 101131892B1 KR 20100029611 A KR20100029611 A KR 20100029611A KR 20100029611 A KR20100029611 A KR 20100029611A KR 101131892 B1 KR101131892 B1 KR 101131892B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 230000000295 complement effect Effects 0.000 claims description 49
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 25
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 description 26
- 239000000463 material Substances 0.000 description 16
- 238000002955 isolation Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 3
- 230000000153 supplemental effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
도 2a 내지 도 2i는 본 발명의 실시예에 따른 매립 게이트를 갖는 반도체 장치 제조 방법을 설명하기 위한 공정 단면도.
12 : 실리콘층 100 : 기판
13 : 패드산화막 14 : 패드질화막
15 : 소자분리막 16 : 트렌치
17 : 게이트 절연막 18A : 매립 게이트
19 : 캡핑막 20 : 플러그 물질
Claims (13)
- 기판상에 형성된 보완층;
상기 보완층 상에 형성된 실리콘층;
상기 보완층 및 실리콘층을 관통하면서 기판에 형성된 트렌치;
상기 트렌치의 표면을 따라 형성된 게이트 절연막;
상기 게이트 절연막 상에 형성되고 상기 기판에 형성된 트렌치를 일부 매립하는 매립 게이트; 및
상기 실리콘층에 형성된 접합영역
를 포함하는 매립 게이트를 갖는 반도체 장치.
- 제1항에 있어서,
상기 보완층은 실리콘저마늄(SiGe), 탄화실리콘저마늄(SiGeC) 및 탄화실리콘(SiC)로 이루어진 그룹 중에서 선택된 어느 하나인 매립 게이트를 갖는 반도체 장치.
- 제1항에 있어서,
상기 보완층은 실리콘저마늄(SiGe)이고, 막 내에 저마늄(Ge)의 함량이 5%~30%의 함량비를 갖는 매립 게이트를 갖는 반도체 장치.
- 제1항에 있어서,
상기 보완층의 두께는 50Å~500Å이고, 상기 실리콘층의 두께는 100Å~500Å인 매립 게이트를 갖는 반도체 장치.
- 제1항에 있어서,
상기 매립 게이트 상에 형성된 상기 트렌치의 나머지 부분을 매립하는 캡핑막을 더 포함하는 매립 게이트를 갖는 반도체 장치.
- 제1항에 있어서,
상기 보완층 및 상기 실리콘층은 단결정인 반도체 장치.
- 기판상에 보완층을 형성하는 단계;
상기 보완층 상에 실리콘층을 형성하는 단계;
상기 실리콘층에 접합영역을 형성하는 단계;
상기 실리콘층, 상기 보완층 및 상기 기판을 식각하여 트렌치를 형성하는 단계;
상기 트렌치 표면을 따라 게이트 절연막을 형성하는 단계; 및
상기 게이트 절연막 상에 상기 기판에 형성된 트렌치를 일부 매립하는 매립 게이트를 형성하는 단계
를 포함하는 매립 게이트를 갖는 반도체 장치 제조 방법.
- 제7항에 있어서,
상기 보완층은 실리콘저마늄(SiGe), 탄화실리콘저마늄(SiGeC) 및 탄화실리콘(SiC)로 이루어진 그룹 중에서 선택된 어느 하나인 매립 게이트를 갖는 반도체 장치 제조 방법.
- 제7항에 있어서,
상기 보완층은 실리콘저마늄(SiGe)이고, 막 내에 저마늄(Ge)의 함량이 5%~30%의 함량비를 갖는 매립 게이트를 갖는 반도체 장치 제조 방법.
- 제7항에 있어서,
상기 보완층 및 실리콘층은 인시튜(In-Situ)로 형성하는 매립 게이트를 갖는 반도체 장치 제조 방법.
- 제7항에 있어서,
상기 보완층을 형성하기 이전에,
상기 기판 표면을 세정하는 단계를 더 포함하는 매립 게이트를 갖는 반도체 장치 제조 방법.
- 제7항에 있어서,
상기 보완층의 두께는 50Å~500Å이고, 상기 실리콘층의 두께는 100Å~500Å인 매립 게이트를 갖는 반도체 장치 제조 방법.
- 제7항에 있어서,
상기 매립 게이트 상에 상기 트렌치의 나머지 부분을 매립하는 캡핑막을 형성하는 단계
를 더 포함하는 반도체 장치 제조 방법.
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KR20100029611A KR101131892B1 (ko) | 2010-03-31 | 2010-03-31 | 매립 게이트를 갖는 반도체 장치 및 그의 제조 방법 |
US12/939,534 US9048218B2 (en) | 2010-03-31 | 2010-11-04 | Semiconductor device with buried gates and method for fabricating the same |
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KR20100029611A KR101131892B1 (ko) | 2010-03-31 | 2010-03-31 | 매립 게이트를 갖는 반도체 장치 및 그의 제조 방법 |
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KR20110109752A KR20110109752A (ko) | 2011-10-06 |
KR101131892B1 true KR101131892B1 (ko) | 2012-04-03 |
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KR20130055981A (ko) * | 2011-11-21 | 2013-05-29 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조 방법 |
KR101920247B1 (ko) | 2012-09-17 | 2018-11-20 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
KR101847630B1 (ko) | 2013-04-01 | 2018-05-24 | 삼성전자주식회사 | 반도체 소자 및 반도체 모듈 |
KR20160012544A (ko) | 2014-07-24 | 2016-02-03 | 에스케이하이닉스 주식회사 | 반도체 소자 |
US10020380B2 (en) * | 2015-01-23 | 2018-07-10 | Alpha And Omega Semiconductor Incorporated | Power device with high aspect ratio trench contacts and submicron pitches between trenches |
CN108257957A (zh) * | 2016-12-29 | 2018-07-06 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
JP7486453B2 (ja) * | 2021-03-26 | 2024-05-17 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
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US20110241106A1 (en) | 2011-10-06 |
KR20110109752A (ko) | 2011-10-06 |
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