KR100959205B1 - 세정 방법 및 전자 소자의 제조 방법 - Google Patents
세정 방법 및 전자 소자의 제조 방법 Download PDFInfo
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- KR100959205B1 KR100959205B1 KR1020080011944A KR20080011944A KR100959205B1 KR 100959205 B1 KR100959205 B1 KR 100959205B1 KR 1020080011944 A KR1020080011944 A KR 1020080011944A KR 20080011944 A KR20080011944 A KR 20080011944A KR 100959205 B1 KR100959205 B1 KR 100959205B1
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- South Korea
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- solution
- cleaning
- oxidizing solution
- oxidizing
- hydrogen peroxide
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- 238000004140 cleaning Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 83
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 61
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 53
- 238000002156 mixing Methods 0.000 claims description 51
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 14
- -1 mono-sulfur peroxide Chemical class 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 77
- 238000011156 evaluation Methods 0.000 description 14
- 239000000356 contaminant Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
- 150000002978 peroxides Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (21)
- 농도가 90 중량 퍼센트 이상인 황산을 전기분해하여 산화 용액을 제조하는 단계; 및상기 산화 용액에 순수한 물, 과산화수소 용액 및 오존수 중 1종 이상을 혼합함으로써 혼합열을 발생시켜, 상기 혼합열에 의해 가열된 상태의 상기 산화 용액을 세정 대상물에 대하여 상대적으로 이동시키면서 공급하여 상기 세정 대상물을 세정하는 단계를 포함하는 세정 방법.
- 제1항에 있어서, 산화 용액이 과산화일황산 및 과산화이황산 중 하나 이상을 포함하는 것인 세정 방법.
- 삭제
- 제1항에 있어서, 상기 혼합 단계가 산화 용액을 세정 대상물과 접촉시키기 전에 수행되는 것인 세정 방법.
- 제4항에 있어서, 상기 혼합 단계가 산화 용액을 세정 대상물로 방출시키는 노즐에서 수행되는 것인 세정 방법.
- 제1항에 있어서, 상기 혼합 단계가 산화 용액을 세정 대상물과 접촉시킨 후에 수행되는 것인 세정 방법.
- 제1항에 있어서, 과산화일황산, 과산화일황산의 염, 과산화이황산 및 과산화이황산의 염으로 이루어진 군으로부터 선택되는 1종 이상이 산화 용액에 가해지는 것인 세정 방법.
- 삭제
- 제1항에 있어서, 전기분해부의 양극이 불용성 양극, 백금, 이산화납 및 전도성 다이아몬드로 이루어진 군으로부터 선택된 것으로 제조되는 것인 세정 방법.
- 제1항에 있어서, 전기분해부의 양극이 전도성 다이아몬드로 제조되는 것인 세정 방법.
- 제1항에 있어서, 전기분해부의 음극이 불용성 양극, 백금, 탄소 및 전도성 다이아몬드로 이루어진 군으로부터 선택된 것으로 제조되는 것인 세정 방법.
- 제1항에 있어서, 산화 용액이 혼합 단계 전에 가열되는 것인 세정 방법.
- 제1항에 있어서, 산화 용액을 방출시키는 노즐을 움직이면서, 산화 용액을 세정 대상물과 접촉시키는 것인 세정 방법.
- 제1항에 있어서, 세정 대상물이 장착되어 있는 테이블을 회전시키면서, 산화 용액을 세정 대상물과 접촉시키는 것인 세정 방법.
- 제1항에 있어서, 과산화수소 용액이 산화 용액 1 부피에 대하여 1 내지 5의 부피비로 혼합되는 것인 세정 방법.
- 삭제
- 세정 대상물을 형성시키는 단계;농도가 90 중량 퍼센트 이상인 황산을 전기분해하여 산화 용액을 제조하는 단계; 및상기 산화 용액에 순수한 물, 과산화수소 용액 및 오존수 중 1종 이상을 혼합함으로써 혼합열을 발생시켜, 상기 혼합열에 의해 가열된 상태의 상기 산화 용액을 상기 세정 대상물에 대하여 상대적으로 이동시키면서 공급하여 상기 세정 대상물을 세정하는 단계를 포함하는 전자 소자의 제조 방법.
- 제17항에 있어서, 세정 대상물이 이온-주입된 레지스트를 포함하는 것인 전자 소자의 제조 방법.
- 제18항에 있어서, 산화 용액을 95℃ 이상으로 가열함으로써 상기 레지스트가 박리되는 것인 전자 소자의 제조 방법.
- 제18항에 있어서, 산화 용액이 125℃ 이상으로 가열되는 것인 전자 소자의 제조 방법.
- 제18항에 있어서, 상기 레지스트가 산화 용액 1 부피에 대하여 과산화수소 용액을 1 내지 5 부피비로 포함하는 산화 용액에 의해 박리되는 것인 전자 소자의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007031286A JP5148889B2 (ja) | 2007-02-09 | 2007-02-09 | 洗浄方法及び電子デバイスの製造方法 |
JPJP-P-2007-00031286 | 2007-02-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080074792A KR20080074792A (ko) | 2008-08-13 |
KR100959205B1 true KR100959205B1 (ko) | 2010-05-19 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020080011944A KR100959205B1 (ko) | 2007-02-09 | 2008-02-05 | 세정 방법 및 전자 소자의 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8454754B2 (ko) |
JP (1) | JP5148889B2 (ko) |
KR (1) | KR100959205B1 (ko) |
CN (2) | CN102157370B (ko) |
TW (1) | TWI394206B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101165918B1 (ko) | 2009-09-25 | 2012-07-20 | 가부시끼가이샤 도시바 | 세정 방법, 세정 시스템, 및 미세 구조체의 제조 방법 |
KR20150026964A (ko) * | 2013-09-02 | 2015-03-11 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
Families Citing this family (12)
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JP5106523B2 (ja) * | 2009-12-16 | 2012-12-26 | 株式会社東芝 | エッチング処理方法、微細構造体の製造方法、およびエッチング処理装置 |
JP2011192779A (ja) * | 2010-03-15 | 2011-09-29 | Kurita Water Ind Ltd | 電子材料の洗浄方法および洗浄システム |
JP5386037B2 (ja) * | 2010-03-31 | 2014-01-15 | Hoya株式会社 | 磁気ディスク用ガラス基板の製造方法 |
JP5271345B2 (ja) * | 2010-12-21 | 2013-08-21 | クロリンエンジニアズ株式会社 | 導電性ダイヤモンド電極、これを用いた、硫酸電解方法及び硫酸電解装置 |
CN103765561B (zh) * | 2011-07-11 | 2017-02-15 | 栗田工业株式会社 | 金属栅极半导体的清洗方法 |
CN103987664B (zh) | 2011-12-06 | 2017-03-08 | 德尔塔阀门公司 | 龙头中的臭氧分配 |
JP6168271B2 (ja) | 2012-08-08 | 2017-07-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6191954B2 (ja) * | 2013-09-02 | 2017-09-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US9406749B2 (en) * | 2014-10-02 | 2016-08-02 | Taiwan Semiconductor Manufacturing Company Limited | Method of manufacturing a horizontal gate-all-around transistor having a fin |
CA3007437C (en) | 2015-12-21 | 2021-09-28 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
US11875991B2 (en) * | 2018-06-13 | 2024-01-16 | Tokyo Electron Limited | Substrate treatment method and substrate treatment device |
JP2024094631A (ja) * | 2022-12-28 | 2024-07-10 | 株式会社Screenホールディングス | 基板処理装置、および、基板処理方法 |
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JP2006108304A (ja) * | 2004-10-04 | 2006-04-20 | Nec Electronics Corp | 基板処理装置 |
JP4862981B2 (ja) | 2004-10-18 | 2012-01-25 | 栗田工業株式会社 | 硫酸リサイクル型洗浄システムおよびその運転方法 |
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- 2007-02-09 JP JP2007031286A patent/JP5148889B2/ja active Active
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- 2008-02-05 TW TW097104727A patent/TWI394206B/zh active
- 2008-02-05 KR KR1020080011944A patent/KR100959205B1/ko active IP Right Grant
- 2008-02-08 US US12/028,288 patent/US8454754B2/en active Active
- 2008-02-13 CN CN201110066173.XA patent/CN102157370B/zh active Active
- 2008-02-13 CN CN2008100097548A patent/CN101307460B/zh active Active
Patent Citations (1)
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JP2006114880A (ja) * | 2004-09-17 | 2006-04-27 | Kurita Water Ind Ltd | 硫酸リサイクル型洗浄システムおよび硫酸リサイクル型過硫酸供給装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101165918B1 (ko) | 2009-09-25 | 2012-07-20 | 가부시끼가이샤 도시바 | 세정 방법, 세정 시스템, 및 미세 구조체의 제조 방법 |
KR20150026964A (ko) * | 2013-09-02 | 2015-03-11 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
KR102223259B1 (ko) | 2013-09-02 | 2021-03-04 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
Also Published As
Publication number | Publication date |
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CN101307460A (zh) | 2008-11-19 |
JP2008198742A (ja) | 2008-08-28 |
TWI394206B (zh) | 2013-04-21 |
US8454754B2 (en) | 2013-06-04 |
KR20080074792A (ko) | 2008-08-13 |
CN101307460B (zh) | 2011-05-18 |
CN102157370B (zh) | 2014-07-02 |
US20080196743A1 (en) | 2008-08-21 |
JP5148889B2 (ja) | 2013-02-20 |
TW200908117A (en) | 2009-02-16 |
CN102157370A (zh) | 2011-08-17 |
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