CN102157370A - 清洗方法及制造电子器件的方法 - Google Patents
清洗方法及制造电子器件的方法 Download PDFInfo
- Publication number
- CN102157370A CN102157370A CN201110066173XA CN201110066173A CN102157370A CN 102157370 A CN102157370 A CN 102157370A CN 201110066173X A CN201110066173X A CN 201110066173XA CN 201110066173 A CN201110066173 A CN 201110066173A CN 102157370 A CN102157370 A CN 102157370A
- Authority
- CN
- China
- Prior art keywords
- oxidizing solution
- workpiece
- steam generator
- hydrogenperoxide steam
- cleaning method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 104
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000002156 mixing Methods 0.000 claims abstract description 50
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 30
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 108
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 53
- 239000002253 acid Substances 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 125000005385 peroxodisulfate group Chemical group 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- GRWZHXKQBITJKP-UHFFFAOYSA-L dithionite(2-) Chemical compound [O-]S(=O)S([O-])=O GRWZHXKQBITJKP-UHFFFAOYSA-L 0.000 claims 1
- 239000000243 solution Substances 0.000 description 78
- 229910052796 boron Inorganic materials 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 239000003344 environmental pollutant Substances 0.000 description 8
- 231100000719 pollutant Toxicity 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- -1 peroxo disulfate acid amide Chemical class 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007031286A JP5148889B2 (ja) | 2007-02-09 | 2007-02-09 | 洗浄方法及び電子デバイスの製造方法 |
JP031286/2007 | 2007-02-09 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100097548A Division CN101307460B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102157370A true CN102157370A (zh) | 2011-08-17 |
CN102157370B CN102157370B (zh) | 2014-07-02 |
Family
ID=39705612
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110066173.XA Active CN102157370B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
CN2008100097548A Active CN101307460B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100097548A Active CN101307460B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8454754B2 (zh) |
JP (1) | JP5148889B2 (zh) |
KR (1) | KR100959205B1 (zh) |
CN (2) | CN102157370B (zh) |
TW (1) | TWI394206B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5148576B2 (ja) | 2009-09-25 | 2013-02-20 | 株式会社東芝 | 洗浄方法 |
JP5106523B2 (ja) * | 2009-12-16 | 2012-12-26 | 株式会社東芝 | エッチング処理方法、微細構造体の製造方法、およびエッチング処理装置 |
JP2011192779A (ja) * | 2010-03-15 | 2011-09-29 | Kurita Water Ind Ltd | 電子材料の洗浄方法および洗浄システム |
JP5386037B2 (ja) * | 2010-03-31 | 2014-01-15 | Hoya株式会社 | 磁気ディスク用ガラス基板の製造方法 |
JP5271345B2 (ja) * | 2010-12-21 | 2013-08-21 | クロリンエンジニアズ株式会社 | 導電性ダイヤモンド電極、これを用いた、硫酸電解方法及び硫酸電解装置 |
WO2013008605A1 (ja) * | 2011-07-11 | 2013-01-17 | 栗田工業株式会社 | メタルゲート半導体の洗浄方法 |
US9919939B2 (en) | 2011-12-06 | 2018-03-20 | Delta Faucet Company | Ozone distribution in a faucet |
JP6168271B2 (ja) * | 2012-08-08 | 2017-07-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6191953B2 (ja) * | 2013-09-02 | 2017-09-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6191954B2 (ja) * | 2013-09-02 | 2017-09-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US9406749B2 (en) * | 2014-10-02 | 2016-08-02 | Taiwan Semiconductor Manufacturing Company Limited | Method of manufacturing a horizontal gate-all-around transistor having a fin |
US11458214B2 (en) | 2015-12-21 | 2022-10-04 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
US11875991B2 (en) * | 2018-06-13 | 2024-01-16 | Tokyo Electron Limited | Substrate treatment method and substrate treatment device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5651860A (en) * | 1996-03-06 | 1997-07-29 | Micron Technology, Inc. | Ion-implanted resist removal method |
JPH11293288A (ja) * | 1998-04-08 | 1999-10-26 | Kurita Water Ind Ltd | 電子材料用洗浄水及び電子材料用洗浄液 |
US20050139487A1 (en) * | 2003-05-02 | 2005-06-30 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method for the oxidative treatment of components comprised of or containing elementary silicon and/or substantially inorganic silicon compounds |
JP2005183937A (ja) | 2003-11-25 | 2005-07-07 | Nec Electronics Corp | 半導体装置の製造方法およびレジスト除去用洗浄装置 |
JP4462146B2 (ja) * | 2004-09-17 | 2010-05-12 | 栗田工業株式会社 | 硫酸リサイクル型洗浄システムおよび硫酸リサイクル型過硫酸供給装置 |
JP2006108304A (ja) * | 2004-10-04 | 2006-04-20 | Nec Electronics Corp | 基板処理装置 |
JP4862981B2 (ja) | 2004-10-18 | 2012-01-25 | 栗田工業株式会社 | 硫酸リサイクル型洗浄システムおよびその運転方法 |
-
2007
- 2007-02-09 JP JP2007031286A patent/JP5148889B2/ja active Active
-
2008
- 2008-02-05 KR KR1020080011944A patent/KR100959205B1/ko active IP Right Grant
- 2008-02-05 TW TW097104727A patent/TWI394206B/zh active
- 2008-02-08 US US12/028,288 patent/US8454754B2/en active Active
- 2008-02-13 CN CN201110066173.XA patent/CN102157370B/zh active Active
- 2008-02-13 CN CN2008100097548A patent/CN101307460B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN101307460A (zh) | 2008-11-19 |
CN102157370B (zh) | 2014-07-02 |
US8454754B2 (en) | 2013-06-04 |
KR100959205B1 (ko) | 2010-05-19 |
TW200908117A (en) | 2009-02-16 |
KR20080074792A (ko) | 2008-08-13 |
JP2008198742A (ja) | 2008-08-28 |
CN101307460B (zh) | 2011-05-18 |
TWI394206B (zh) | 2013-04-21 |
JP5148889B2 (ja) | 2013-02-20 |
US20080196743A1 (en) | 2008-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: PERMELEC ELECTRODE LTD. TOSHIBA K.K. Free format text: FORMER OWNER: CHLORINE ENG CORP. LTD TOSHIBA K.K. Effective date: 20140530 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140530 Address after: Kanagawa Applicant after: Shibaura Mechantronics Corp. Applicant after: Permelec Electrode Ltd. Applicant after: Toshiba Corp Address before: Kanagawa Applicant before: Shibaura Mechantronics Corp. Applicant before: Chlorine Eng Corp. Ltd Applicant before: Toshiba Corp |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: Shibaura Mechantronics Corp. Patentee after: DE NORA PERMELEC LTD Patentee after: Toshiba Corp Address before: Kanagawa Patentee before: Shibaura Mechantronics Corp. Patentee before: Permelec Electrode Ltd. Patentee before: Toshiba Corp |