KR100924474B1 - 발광장치 - Google Patents
발광장치 Download PDFInfo
- Publication number
- KR100924474B1 KR100924474B1 KR1020077024454A KR20077024454A KR100924474B1 KR 100924474 B1 KR100924474 B1 KR 100924474B1 KR 1020077024454 A KR1020077024454 A KR 1020077024454A KR 20077024454 A KR20077024454 A KR 20077024454A KR 100924474 B1 KR100924474 B1 KR 100924474B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- light
- reflecting member
- emitting element
- emitting device
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 59
- 238000009826 distribution Methods 0.000 abstract description 34
- 239000000919 ceramic Substances 0.000 description 24
- 229920005989 resin Polymers 0.000 description 23
- 239000011347 resin Substances 0.000 description 23
- 230000035882 stress Effects 0.000 description 21
- 239000004020 conductor Substances 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000006866 deterioration Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000004308 accommodation Effects 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007774 longterm Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 229920000106 Liquid crystal polymer Polymers 0.000 description 5
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- -1 gallium nitride compound Chemical class 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (10)
- 기체;상기 기체에 실장된 발광소자;상기 발광소자를 둘러싸고 있고, 상기 기체상에 설치된 제 1 반사부재;상기 발광소자를 덮고 있고, 상기 제 1 반사부재의 내측에 설치된 투광성 부재;상기 제 1 반사부재의 상단보다 높은 위치에 설치된 상단을 갖고, 상기 제 1 반사부재를 둘러쌈과 동시에 상기 기체상에 설치된 제 2 반사부재; 및상기 발광소자 및 상기 투광성 부재를 덮고 있고, 상기 제 2 반사부재의 내 측에 설치된 형광체층을 구비하는 것을 특징으로 하는 발광장치.
- 제 1 항에 있어서, 상기 형광체층은 상기 제 1 반사부재의 내측에 설치되어 있는 것을 특징으로 하는 발광장치.
- 제 2 항에 있어서, 상기 형광체층은 상기 제 1 반사부재의 상단부분에 설치되어 있는 것을 특징으로 하는 발광장치.
- 제 1 항에 있어서, 상기 형광체층은 상기 제 1 반사부재의 상방에 제 1 반사부재와 이격하여 설치되어 있는 것을 특징으로 하는 발광장치.
- 제 1 항에 있어서, 상기 형광체층은 상기 제 1 반사부재상에 설치되어 있는 것을 특징으로 하는 발광장치.
- 제 1 항에 있어서, 상기 형광체층은 시트 형상을 갖고 있는 것을 특징으로 하는 발광장치.
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00085367 | 2005-03-24 | ||
JP2005085367 | 2005-03-24 | ||
JP2005312710 | 2005-10-27 | ||
JPJP-P-2005-00312710 | 2005-10-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070117684A KR20070117684A (ko) | 2007-12-12 |
KR100924474B1 true KR100924474B1 (ko) | 2009-11-03 |
Family
ID=37023831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077024454A KR100924474B1 (ko) | 2005-03-24 | 2006-03-23 | 발광장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8029152B2 (ko) |
JP (2) | JP5065888B2 (ko) |
KR (1) | KR100924474B1 (ko) |
CN (1) | CN101147270B (ko) |
DE (1) | DE112006000694B4 (ko) |
TW (1) | TW200644190A (ko) |
WO (1) | WO2006101174A1 (ko) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008277607A (ja) * | 2007-05-01 | 2008-11-13 | Matsushita Electric Ind Co Ltd | 発光装置、線状発光装置、面状発光装置、液晶表示装置および電子機器 |
JP5178349B2 (ja) * | 2008-06-26 | 2013-04-10 | 京セラ株式会社 | 発光装置および照明ユニット |
US20100032702A1 (en) * | 2008-08-11 | 2010-02-11 | E. I. Du Pont De Nemours And Company | Light-Emitting Diode Housing Comprising Fluoropolymer |
JP2010123746A (ja) * | 2008-11-19 | 2010-06-03 | Toshiba Corp | 光半導体装置と、照明装置および表示装置 |
JP5368809B2 (ja) * | 2009-01-19 | 2013-12-18 | ローム株式会社 | Ledモジュールの製造方法およびledモジュール |
KR101037789B1 (ko) * | 2009-04-22 | 2011-05-27 | 주식회사 엠디티 | 도전부재가 도포되어 일체화된 절연재와 금속 하우징을 구비하는 발광다이오드 장착용 패키지 |
DE102009022611B4 (de) | 2009-05-26 | 2012-03-08 | Instrument Systems Optische Messtechnik Gmbh | Kalibrierstrahlungsquelle |
WO2011024502A1 (ja) * | 2009-08-28 | 2011-03-03 | 京セラ株式会社 | 発光装置 |
DE102009058421A1 (de) * | 2009-12-16 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil |
JP4991834B2 (ja) | 2009-12-17 | 2012-08-01 | シャープ株式会社 | 車両用前照灯 |
KR101047647B1 (ko) | 2010-01-15 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
JP5232815B2 (ja) | 2010-02-10 | 2013-07-10 | シャープ株式会社 | 車両用前照灯 |
US8469555B2 (en) * | 2010-03-30 | 2013-06-25 | Cooper Technologies Company | Multi-reflector optical system |
DE202010000518U1 (de) * | 2010-03-31 | 2011-08-09 | Turck Holding Gmbh | Lampe mit einer in einem hermetisch verschlossenen Gehäuse angeordneten LED |
DE102010015068A1 (de) * | 2010-04-15 | 2011-10-20 | Paul Voinea | Lichtleitsystem |
CN101867008B (zh) * | 2010-05-17 | 2012-11-21 | 中山大学佛山研究院 | 一种可自释放应力的led封装模块 |
US8733996B2 (en) | 2010-05-17 | 2014-05-27 | Sharp Kabushiki Kaisha | Light emitting device, illuminating device, and vehicle headlamp |
JP5255018B2 (ja) * | 2010-05-17 | 2013-08-07 | シャープ株式会社 | レーザダウンライト及びレーザダウンライトシステム |
JP5701523B2 (ja) * | 2010-06-22 | 2015-04-15 | 日東電工株式会社 | 半導体発光装置 |
JP5566785B2 (ja) * | 2010-06-22 | 2014-08-06 | 日東電工株式会社 | 複合シート |
JP5662064B2 (ja) * | 2010-06-25 | 2015-01-28 | パナソニックIpマネジメント株式会社 | 発光装置 |
JP2012023184A (ja) * | 2010-07-14 | 2012-02-02 | Sharp Corp | 発光装置 |
US9816677B2 (en) | 2010-10-29 | 2017-11-14 | Sharp Kabushiki Kaisha | Light emitting device, vehicle headlamp, illumination device, and laser element |
JP2016086191A (ja) * | 2010-11-05 | 2016-05-19 | ローム株式会社 | 半導体発光装置 |
JP2014038876A (ja) * | 2010-12-15 | 2014-02-27 | Panasonic Corp | 半導体発光装置 |
US8901578B2 (en) * | 2011-05-10 | 2014-12-02 | Rohm Co., Ltd. | LED module having LED chips as light source |
KR101262541B1 (ko) | 2011-07-18 | 2013-05-08 | 엘지이노텍 주식회사 | 표시장치 |
KR101219106B1 (ko) * | 2011-08-01 | 2013-01-11 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101241447B1 (ko) * | 2011-08-03 | 2013-03-11 | 장종진 | 발광 다이오드 패키지 및 그의 제조 방법 |
CN108565329A (zh) * | 2011-11-17 | 2018-09-21 | 株式会社流明斯 | 发光元件封装体以及包括该发光元件封装体的背光单元 |
KR101293934B1 (ko) * | 2012-02-29 | 2013-08-16 | (주) 아모엘이디 | 엘이디 패키지용 리플렉터 및 이를 포함하는 엘이디 패키지 |
US8931922B2 (en) * | 2012-03-22 | 2015-01-13 | Osram Sylvania Inc. | Ceramic wavelength-conversion plates and light sources including the same |
CN103367599A (zh) * | 2012-04-03 | 2013-10-23 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
CN103489984B (zh) * | 2012-06-13 | 2017-09-12 | 亿光电子工业股份有限公司 | 发光二极管封装结构及其制作方法 |
JP6099901B2 (ja) * | 2012-08-23 | 2017-03-22 | スタンレー電気株式会社 | 発光装置 |
JP2014060328A (ja) * | 2012-09-19 | 2014-04-03 | Nichia Chem Ind Ltd | 発光装置 |
DE102012110957A1 (de) * | 2012-11-14 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement zur Emission von mischfarbiger Strahlung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
US9004727B2 (en) * | 2013-01-15 | 2015-04-14 | Snap-On Incorporated | Interchangeable reflectors for light devices |
US20140208689A1 (en) | 2013-01-25 | 2014-07-31 | Renee Joyal | Hypodermic syringe assist apparatus and method |
CN104937326B (zh) | 2013-01-25 | 2018-10-26 | 亮锐控股有限公司 | 照明组件和用于制造照明组件的方法 |
JP6135032B2 (ja) * | 2013-02-19 | 2017-05-31 | スタンレー電気株式会社 | 発光装置、車両用灯具及び応力逃がし部成型方法 |
JP6172796B2 (ja) * | 2013-06-07 | 2017-08-02 | シチズン電子株式会社 | Led発光装置 |
KR101592649B1 (ko) * | 2013-12-24 | 2016-02-12 | 현대자동차주식회사 | 헤드램프용 레이저 광학계 |
EP3092664B1 (en) | 2014-01-09 | 2019-08-14 | Lumileds Holding B.V. | Light emitting device with reflective sidewall |
EP2919284B1 (en) | 2014-03-14 | 2019-07-03 | Citizen Electronics Co., Ltd. | Light emitting apparatus |
KR102237112B1 (ko) * | 2014-07-30 | 2021-04-08 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 광원 모듈 |
JP6582382B2 (ja) * | 2014-09-26 | 2019-10-02 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6908859B2 (ja) * | 2014-12-25 | 2021-07-28 | 日亜化学工業株式会社 | 半導体装置および半導体装置の製造方法 |
EP4273944A3 (en) | 2015-04-02 | 2024-02-07 | Nichia Corporation | Light emitting device and method for manufacturing the same |
JP6065135B2 (ja) * | 2015-04-02 | 2017-01-25 | 日亜化学工業株式会社 | 発光装置 |
CN106206912B (zh) | 2015-05-29 | 2020-08-07 | 日亚化学工业株式会社 | 发光装置、覆盖部件的制造方法及发光装置的制造方法 |
JP6183486B2 (ja) * | 2015-05-29 | 2017-08-23 | 日亜化学工業株式会社 | 発光装置、被覆部材の製造方法及び発光装置の製造方法 |
JP6537136B2 (ja) * | 2015-06-16 | 2019-07-03 | 大口マテリアル株式会社 | Ledパッケージ及び多列型led用リードフレーム、並びにそれらの製造方法 |
US9966514B2 (en) * | 2015-07-02 | 2018-05-08 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode package structure and fabrication method |
JP6337859B2 (ja) * | 2015-09-08 | 2018-06-06 | 日亜化学工業株式会社 | 発光装置 |
SG11201811135QA (en) * | 2016-04-18 | 2019-01-30 | Kyocera Corp | Light-emitting element housing member, array member, and light-emitting device |
WO2018030486A1 (ja) | 2016-08-10 | 2018-02-15 | 京セラ株式会社 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
KR20180046274A (ko) * | 2016-10-27 | 2018-05-08 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
TWI765161B (zh) * | 2016-11-11 | 2022-05-21 | 日商京瓷股份有限公司 | 電氣元件搭載用封裝體、陣列型封裝體及電氣裝置 |
KR20180070149A (ko) * | 2016-12-16 | 2018-06-26 | 삼성전자주식회사 | 반도체 발광장치 |
DE202017103633U1 (de) * | 2017-06-20 | 2018-09-24 | Tridonic Jennersdorf Gmbh | LED Modul mit Reflektor und integrierten Farbkonversionsmitteln |
KR102631105B1 (ko) * | 2017-08-31 | 2024-01-30 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
DE102017124155A1 (de) * | 2017-10-17 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements |
CN110176529B (zh) | 2018-02-20 | 2022-03-08 | 晶元光电股份有限公司 | 发光元件及其制作方法 |
FR3082354B1 (fr) * | 2018-06-08 | 2020-07-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Puce photonique traversee par un via |
JP7266387B2 (ja) * | 2018-11-12 | 2023-04-28 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6753452B2 (ja) * | 2018-11-30 | 2020-09-09 | 日亜化学工業株式会社 | 発光モジュール |
US11681090B2 (en) | 2019-05-30 | 2023-06-20 | Nichia Corporation | Light emitting module and method of manufacturing same |
DE102020114952A1 (de) * | 2020-06-05 | 2021-12-09 | Schott Ag | Hermetisch dichtes optoelektronisches Modul mit erhöhter Auskopplung von elektromagnetischer Strahlung |
CN114520281A (zh) | 2020-11-20 | 2022-05-20 | 隆达电子股份有限公司 | 发光装置、背光板及显示面板 |
US20240162376A1 (en) * | 2021-03-15 | 2024-05-16 | Kyocera Corporation | Light-emitting device and display device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003532299A (ja) * | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ルミネセンス変換エレメントを備えた光放出半導体素子 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19536454B4 (de) | 1995-09-29 | 2006-03-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiter-Bauelement |
JP3065258B2 (ja) | 1996-09-30 | 2000-07-17 | 日亜化学工業株式会社 | 発光装置及びそれを用いた表示装置 |
JP2000156528A (ja) | 1998-11-19 | 2000-06-06 | Sharp Corp | 発光素子 |
DE10026435A1 (de) * | 2000-05-29 | 2002-04-18 | Osram Opto Semiconductors Gmbh | Kalzium-Magnesium-Chlorosilikat-Leuchtstoff und seine Anwendung bei Lumineszenz-Konversions-LED |
JP3614776B2 (ja) | 2000-12-19 | 2005-01-26 | シャープ株式会社 | チップ部品型ledとその製造方法 |
JP2004103775A (ja) * | 2002-09-09 | 2004-04-02 | Eeshikku Kk | チップled発光体の製造方法およびチップled発光体 |
US7112916B2 (en) * | 2002-10-09 | 2006-09-26 | Kee Siang Goh | Light emitting diode based light source emitting collimated light |
JP2004207672A (ja) | 2002-10-28 | 2004-07-22 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP4163932B2 (ja) * | 2002-10-28 | 2008-10-08 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
CN100459188C (zh) * | 2003-03-18 | 2009-02-04 | 住友电气工业株式会社 | 发光元件安装用构件以及使用该构件的半导体装置 |
JP2005039194A (ja) * | 2003-06-26 | 2005-02-10 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置ならびに照明装置 |
JP4561954B2 (ja) * | 2003-08-08 | 2010-10-13 | 東芝ライテック株式会社 | 発光装置 |
-
2006
- 2006-03-23 CN CN200680009702XA patent/CN101147270B/zh not_active Expired - Fee Related
- 2006-03-23 WO PCT/JP2006/305846 patent/WO2006101174A1/ja active Application Filing
- 2006-03-23 JP JP2007509332A patent/JP5065888B2/ja not_active Expired - Fee Related
- 2006-03-23 US US11/909,592 patent/US8029152B2/en not_active Expired - Fee Related
- 2006-03-23 DE DE112006000694T patent/DE112006000694B4/de not_active Expired - Fee Related
- 2006-03-23 KR KR1020077024454A patent/KR100924474B1/ko active IP Right Grant
- 2006-03-24 TW TW095110440A patent/TW200644190A/zh not_active IP Right Cessation
-
2012
- 2012-03-09 JP JP2012053568A patent/JP5437420B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003532299A (ja) * | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ルミネセンス変換エレメントを備えた光放出半導体素子 |
Also Published As
Publication number | Publication date |
---|---|
CN101147270B (zh) | 2010-05-26 |
WO2006101174A1 (ja) | 2006-09-28 |
TWI311803B (ko) | 2009-07-01 |
KR20070117684A (ko) | 2007-12-12 |
JPWO2006101174A1 (ja) | 2008-09-04 |
TW200644190A (en) | 2006-12-16 |
DE112006000694B4 (de) | 2013-10-17 |
JP2012114468A (ja) | 2012-06-14 |
US20090296367A1 (en) | 2009-12-03 |
CN101147270A (zh) | 2008-03-19 |
JP5065888B2 (ja) | 2012-11-07 |
JP5437420B2 (ja) | 2014-03-12 |
DE112006000694T5 (de) | 2008-02-07 |
US8029152B2 (en) | 2011-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100924474B1 (ko) | 발광장치 | |
CN109427758B (zh) | 发光装置 | |
JP7177331B2 (ja) | 発光装置 | |
JP4747726B2 (ja) | 発光装置 | |
JP4698412B2 (ja) | 発光装置および照明装置 | |
JP5196711B2 (ja) | 発光装置およびそれを用いた照明装置 | |
JP2021170688A (ja) | 発光装置、集積型発光装置および発光モジュール | |
EP3154096A1 (en) | Light-emitting device, integrated light-emitting device having the same, and light-emitting module incorporating the same | |
KR20060107428A (ko) | 발광장치 | |
JP4606302B2 (ja) | 発光装置 | |
CN108963056B (zh) | 发光装置 | |
JP4443188B2 (ja) | 発光素子収納用パッケージおよび発光装置 | |
JP2019046789A (ja) | 発光装置 | |
JP4606382B2 (ja) | 発光装置 | |
JP4948841B2 (ja) | 発光装置および照明装置 | |
JP4938255B2 (ja) | 発光素子収納用パッケージ、光源および発光装置 | |
JP2009224376A (ja) | 側面型発光装置及びその製造方法 | |
JP7014966B2 (ja) | 発光装置 | |
JP4614679B2 (ja) | 発光装置およびその製造方法ならびに照明装置 | |
JP7212296B2 (ja) | 発光装置 | |
JP7144682B2 (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121002 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20131001 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20141007 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20151001 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20181004 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20191002 Year of fee payment: 11 |