KR100887226B1 - 초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법 - Google Patents
초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법 Download PDFInfo
- Publication number
- KR100887226B1 KR100887226B1 KR1020070095008A KR20070095008A KR100887226B1 KR 100887226 B1 KR100887226 B1 KR 100887226B1 KR 1020070095008 A KR1020070095008 A KR 1020070095008A KR 20070095008 A KR20070095008 A KR 20070095008A KR 100887226 B1 KR100887226 B1 KR 100887226B1
- Authority
- KR
- South Korea
- Prior art keywords
- ultrasonic vibration
- wafer
- material layer
- cleaning
- intensity
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 81
- 239000007788 liquid Substances 0.000 claims abstract description 60
- 239000007789 gas Substances 0.000 claims abstract description 14
- 239000007787 solid Substances 0.000 claims abstract description 14
- 230000005540 biological transmission Effects 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- 238000004148 unit process Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Acoustics & Sound (AREA)
- Multimedia (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
Description
Claims (13)
- 초음파 진동을 발생하는 초음파 진동 발생부; 및상기 초음파 진동 발생부의 단부에 구비되고, 상기 초음파 진동의 세기 및 방향을 조절하기 위해 내부에 개수, 두께 및 폭 중 적어도 하나가 변화되는 물질층을 가지며, 상기 초음파 진동을 웨이퍼를 세정하기 위한 세정액으로 전달하는 전달 부재를 포함하는 것을 특징으로 하는 초음파 진동 생성 장치.
- 제1항에 있어서, 상기 물질층은 고체, 액체 및 기체 중 어느 하나를 포함하는 것을 특징으로 하는 초음파 진동 생성 장치.
- 삭제
- 초음파 진동을 발생하는 단계; 및상기 초음파 진동을 개수, 두께 및 폭 중 적어도 하나가 변화되는 물질층으로 통과시켜 상기 초음파 진동이 세기 및 방향이 조절하는 단계를 포함하는 초음파 진동 생성 방법.
- 제4항에 있어서, 상기 물질층은 고체, 액체 및 기체 중 어느 하나를 포함하 는 것을 특징으로 하는 초음파 진동 생성 방법.
- 삭제
- 웨이퍼의 상부에 구비되며, 상기 웨이퍼로 상기 웨이퍼를 세정하기 위한 세정액을 공급하는 세정액 공급부;상기 웨이퍼 상부에 구비되며, 초음파 진동을 발생하는 초음파 진동 발생부; 및상기 초음파 진동 발생부의 단부에 구비되고, 상기 웨이퍼 상에 형성된 패턴의 형태와 대응하도록 상기 초음파 진동의 세기 및 방향을 조절하기 위해 내부에 개수, 두께 및 폭 중 적어도 하나가 변화되는 물질층을 가지며, 상기 초음파 진동을 상기 세정액으로 전달하는 전달 부재를 포함하는 것을 특징으로 하는 웨이퍼 세정 장치.
- 제7항에 있어서, 상기 물질층은 고체, 액체 및 기체 중 어느 하나를 포함하는 것을 특징으로 하는 웨이퍼 세정 장치.
- 삭제
- 제7항에 있어서, 상기 전달 부재는 상기 초음파 진동부와 일체로 형성되는 것을 특징으로 하는 웨이퍼 세정 장치.
- 웨이퍼 상에 세정액을 공급하는 단계;초음파 진동을 발생하는 단계;상기 초음파 진동을 개수, 두께 및 폭 중 적어도 하나가 변화되는 물질층으로 통과시켜 상기 웨이퍼 상에 형성된 패턴의 형태와 대응하도록 상기 초음파 진동의 세기 및 방향이 조절하는 단계; 및상기 세기 및 방향이 조절된 초음파 진동을 상기 세정액으로 전달하는 단계를 포함하는 것을 특징으로 하는 웨이퍼 세정 방법.
- 제11항에 있어서, 상기 물질층은 고체, 액체 및 기체 중 어느 하나로 이루어지는 것을 특징으로 하는 웨이퍼 세정 방법.
- 삭제
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070095008A KR100887226B1 (ko) | 2007-09-19 | 2007-09-19 | 초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법 |
TW097135011A TWI367790B (en) | 2007-09-19 | 2008-09-12 | Apparatus and method of generating ultrasonic vibration and apparatus and method of cleaning a wafer using the same |
US12/209,254 US8402980B2 (en) | 2007-09-19 | 2008-09-12 | Apparatus and method of generating ultrasonic vibration and apparatus and method of cleaning a wafer using the same |
CN2008101490500A CN101391255B (zh) | 2007-09-19 | 2008-09-18 | 生成超声振动的装置与方法及用其清洗晶片的装置与方法 |
JP2008241476A JP4914413B2 (ja) | 2007-09-19 | 2008-09-19 | ウエハー洗浄装置及び方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070095008A KR100887226B1 (ko) | 2007-09-19 | 2007-09-19 | 초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100887226B1 true KR100887226B1 (ko) | 2009-03-06 |
Family
ID=40453162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070095008A KR100887226B1 (ko) | 2007-09-19 | 2007-09-19 | 초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8402980B2 (ko) |
JP (1) | JP4914413B2 (ko) |
KR (1) | KR100887226B1 (ko) |
CN (1) | CN101391255B (ko) |
TW (1) | TWI367790B (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4965485B2 (ja) * | 2008-02-29 | 2012-07-04 | 東京応化工業株式会社 | 処理液浸透ユニットおよび処理装置 |
JP5449953B2 (ja) * | 2009-09-29 | 2014-03-19 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
TWI490931B (zh) * | 2009-10-05 | 2015-07-01 | Tokyo Electron Ltd | 超音波清洗裝置、超音波清洗方法、及記錄有用來執行此超音波清洗方法之電腦程式的記錄媒體 |
US7918309B1 (en) * | 2010-07-07 | 2011-04-05 | Robert Kenneth Vierra | Apparatus for producing a continuous sonic boom |
CN102496591B (zh) * | 2011-12-30 | 2016-04-06 | 上海集成电路研发中心有限公司 | 晶圆的清洗装置及清洗方法 |
TWI721080B (zh) * | 2017-01-09 | 2021-03-11 | 大陸商盛美半導體設備(上海)股份有限公司 | 用來清洗襯底的裝置以及高溫化學溶液供液系統 |
KR102152906B1 (ko) * | 2018-11-20 | 2020-09-09 | 세메스 주식회사 | 본딩 장치 및 본딩 방법 |
CN111092033A (zh) * | 2019-12-24 | 2020-05-01 | 广东工业大学 | 一种超声电化学复合的晶片清洗装置及其清洗方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990023329A (ko) * | 1997-08-05 | 1999-03-25 | 히가시 데쓰로 | 기판세정장치 및 기판세정방법 |
KR20040003714A (ko) * | 2002-07-03 | 2004-01-13 | (주)케이.씨.텍 | 웨이퍼 세정 장치 |
KR20050017923A (ko) * | 2003-08-11 | 2005-02-23 | 동부아남반도체 주식회사 | 양면 메가소닉 세정장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2730756B2 (ja) * | 1988-04-13 | 1998-03-25 | 日立建機株式会社 | 超音波探触子及びその製造方法 |
US5511296A (en) * | 1994-04-08 | 1996-04-30 | Hewlett Packard Company | Method for making integrated matching layer for ultrasonic transducers |
US5894452A (en) * | 1994-10-21 | 1999-04-13 | The Board Of Trustees Of The Leland Stanford Junior University | Microfabricated ultrasonic immersion transducer |
JP2000216126A (ja) | 1999-01-22 | 2000-08-04 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法およびその装置 |
US20030062071A1 (en) * | 2001-09-28 | 2003-04-03 | Sorbo Nelson W. | Dense-phase fluid cleaning system utilizing ultrasonic transducers |
US20040009740A1 (en) * | 2002-07-12 | 2004-01-15 | Applied Materials, Inc. | Method and composition for chemical polishing |
JP4519541B2 (ja) * | 2004-06-24 | 2010-08-04 | 株式会社東芝 | 超音波洗浄装置 |
-
2007
- 2007-09-19 KR KR1020070095008A patent/KR100887226B1/ko active IP Right Grant
-
2008
- 2008-09-12 US US12/209,254 patent/US8402980B2/en active Active
- 2008-09-12 TW TW097135011A patent/TWI367790B/zh active
- 2008-09-18 CN CN2008101490500A patent/CN101391255B/zh active Active
- 2008-09-19 JP JP2008241476A patent/JP4914413B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990023329A (ko) * | 1997-08-05 | 1999-03-25 | 히가시 데쓰로 | 기판세정장치 및 기판세정방법 |
KR20040003714A (ko) * | 2002-07-03 | 2004-01-13 | (주)케이.씨.텍 | 웨이퍼 세정 장치 |
KR20050017923A (ko) * | 2003-08-11 | 2005-02-23 | 동부아남반도체 주식회사 | 양면 메가소닉 세정장치 |
Also Published As
Publication number | Publication date |
---|---|
CN101391255B (zh) | 2010-09-22 |
JP2009076916A (ja) | 2009-04-09 |
US8402980B2 (en) | 2013-03-26 |
US20090071504A1 (en) | 2009-03-19 |
TWI367790B (en) | 2012-07-11 |
JP4914413B2 (ja) | 2012-04-11 |
CN101391255A (zh) | 2009-03-25 |
TW200918189A (en) | 2009-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100887226B1 (ko) | 초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법 | |
KR100473475B1 (ko) | 기판 세정 장치 | |
KR100727484B1 (ko) | 화학기계적 연마 장치 및 패드 컨디셔닝 방법 | |
US20080017219A1 (en) | Transducer assembly incorporating a transmitter having through holes, and method and system for cleaning a substrate utilizing the same | |
US8015986B2 (en) | Apparatus for cleaning substrate and method for cleaning substrate | |
JP5839523B2 (ja) | 枚葉式ウェハエッチング装置 | |
KR100468110B1 (ko) | 웨이퍼 처리 장치 | |
US6150762A (en) | Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby | |
JP2004207503A (ja) | 処理装置 | |
KR100927028B1 (ko) | 초음파 노즐 및 이를 포함하는 기판 세정 장치 | |
JP2003297787A (ja) | メガソニック洗浄装置 | |
KR100927029B1 (ko) | 트랜스듀서 및 이를 포함하는 기판 세정 장치 | |
KR100873937B1 (ko) | 웨이퍼 세정 장치 및 웨이퍼 세정 방법 | |
KR100899875B1 (ko) | 기판 세정 장치 및 기판 세정 방법 | |
JP4854236B2 (ja) | 洗浄装置および洗浄方法、ならびにコンピュータ読取可能な記憶媒体 | |
JP3927936B2 (ja) | 枚葉式洗浄方法及び洗浄装置 | |
KR101001312B1 (ko) | 초음파 세정 장치 | |
KR100938249B1 (ko) | 초음파 발생 장치 및 이를 포함하는 기판 세정 장치 | |
US20050087210A1 (en) | Substrate cleaning device | |
KR100954566B1 (ko) | 트랜스미터 및 이를 포함하는 기판 세정 장치 | |
WO2022210088A1 (ja) | 基板処理装置、および基板処理方法 | |
KR100870525B1 (ko) | 기판 세정 장치 | |
KR20040003714A (ko) | 웨이퍼 세정 장치 | |
KR102117125B1 (ko) | 표면 준비, 세정, 및 에칭을 위한 활성종을 생성하는 음향 에너지 | |
KR20110062026A (ko) | 기판 세정 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130201 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20140204 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20150202 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20160129 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20161229 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20180205 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20190208 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20200204 Year of fee payment: 12 |