JP2009076916A - 超音波振動生成装置及び方法、そしてウエハー洗浄装置及び方法 - Google Patents
超音波振動生成装置及び方法、そしてウエハー洗浄装置及び方法 Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 77
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 78
- 230000005540 biological transmission Effects 0.000 claims description 45
- 239000007787 solid Substances 0.000 claims description 12
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 238000004148 unit process Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
【解決手段】 超音波振動生成装置及び方法は、振動発生部から発生された超音波振動が伝達部材の物質層を通過するようにして、超音波振動の強度及び方向を調節する。ウエハー洗浄装置及び方法は、洗浄液供給部から洗浄液をウエハーに供給し、超音波振動発生部が超音波振動を発生し、超音波振動を伝達部材の物質層を通過するようにして超音波振動の強度及び方向を調節して、強度及び方向が調節された超音波振動が洗浄液に伝達される。
【選択図】 図1
Description
に通過させて前記超音波振動の強度及び方向を調節する。
0及び伝達部材120を含む。
強度の超音波振動が伝達されるか、前記超音波振動が集束されるように前記物質層122の個数、厚み、及び幅を調節する。前記ウエハーWで前記パターンの形態が相対的に単純な部位又は前記パターンの高さが相対的に高い部位には前記弱い強度の超音波振動が伝達されるか、前記超音波振動が分散されるように前記物質層122の個数、厚み、及び幅を調節する。
110 超音波振動発生部
120 伝達部材
122 物質層
200 ウエハー洗浄装置
210 支持部
220 駆動部
230 洗浄液供給部
240 ボウル
242 開口
250 排出口
260 超音波振動発生部
270 伝達部材
272 物質層
W ウエハー
Claims (13)
- 超音波振動を発生する超音波振動発生部と、
前記超音波振動発生部の端部に具備され、内部に前記超音波振動の強度及び方向を調節する物質層を有し、前記超音波振動をウエハーを洗浄するための洗浄液に伝達する伝達部材と、を含むことを特徴とする超音波振動生成装置。 - 前記物質層は、固体、液体、及び気体のうち、いずれか1つを含むことを特徴とする請求項1記載の超音波振動生成装置。
- 前記物質層の個数、厚み、及び幅のうち、少なくとも1つを変化させて前記超音波振動の強度及び方向を調節することを特徴とする請求項1記載の超音波生成装置。
- 超音波振動を発生する段階と、
前記超音波振動を物質層に通過させて前記超音波振動の強度及び方向を調節する段階と、を含む超音波振動生成方法。 - 前記物質層は、固体、液体、及び気体のうち、いずれか1つを含むことを特徴とする請求項4記載の超音波振動生成方法。
- 前記超音波振動の強度及び方向の調節は、前記物質層の個数、厚み、及び幅のうち、少なくとも1つを変化させてなることを特徴とする請求項4記載の超音波振動生成方法。
- ウエハーの上部に具備され、前記ウエハーに前記ウエハーを洗浄するための洗浄液を供給する洗浄液供給部と、
前記ウエハーの上部に具備され、超音波振動を発生する超音波振動発生部と、
前記超音波振動発生部の端部に具備され、内部に前記超音波振動の強度及び方向を調節する物質層を有し、前記超音波振動を前記洗浄液に伝達する伝達部材と、を含むことを特徴とするウエハー洗浄装置。 - 前記物質層は、固体、液体、及び気体のうち、いずれか1つを含むことを特徴とする請求項7記載のウエハー洗浄装置。
- 前記洗浄液に伝達される超音波振動の強度及び方向が前記ウエハー上に形成されたパターンの形態と対応するように前記物質層の個数、厚み、及び幅のうち、少なくとも1つが変化されることを特徴とする請求項7記載のウエハー洗浄装置。
- 前記伝達部材は、前記超音波振動発生部と一体に形成されることを特徴とする請求項7記載のウエハー洗浄装置。
- ウエハー上に洗浄液を供給する段階と、
超音波振動を発生する段階と、
前記超音波振動を物質層に通過させて前記超音波振動の強度及び方向を調節する段階と、
前記強度及び方向が調節された超音波振動を前記洗浄液に伝達する段階と、を含むことを特徴とするウエハー洗浄方法。 - 前記物質層は、固体、液体、及び気体のうち、いずれか1つからなることを特徴とする請求項11記載のウエハー洗浄方法。
- 前記洗浄液に伝達される超音波振動の強度及び方向が前記ウエハー上に形成されたパターンの形態と対応するように前記物質層の個数、厚み、及び幅のうち、少なくとも1つを変化させることを特徴とする請求項11記載のウエハー洗浄方法。
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KR10-2007-0095008 | 2007-09-19 | ||
KR1020070095008A KR100887226B1 (ko) | 2007-09-19 | 2007-09-19 | 초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법 |
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JP2009076916A true JP2009076916A (ja) | 2009-04-09 |
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Cited By (1)
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JP2011077144A (ja) * | 2009-09-29 | 2011-04-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
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JP4965485B2 (ja) * | 2008-02-29 | 2012-07-04 | 東京応化工業株式会社 | 処理液浸透ユニットおよび処理装置 |
TWI490931B (zh) * | 2009-10-05 | 2015-07-01 | Tokyo Electron Ltd | 超音波清洗裝置、超音波清洗方法、及記錄有用來執行此超音波清洗方法之電腦程式的記錄媒體 |
US7918309B1 (en) * | 2010-07-07 | 2011-04-05 | Robert Kenneth Vierra | Apparatus for producing a continuous sonic boom |
CN102496591B (zh) * | 2011-12-30 | 2016-04-06 | 上海集成电路研发中心有限公司 | 晶圆的清洗装置及清洗方法 |
TWI721080B (zh) * | 2017-01-09 | 2021-03-11 | 大陸商盛美半導體設備(上海)股份有限公司 | 用來清洗襯底的裝置以及高溫化學溶液供液系統 |
KR102152906B1 (ko) * | 2018-11-20 | 2020-09-09 | 세메스 주식회사 | 본딩 장치 및 본딩 방법 |
CN111092033A (zh) * | 2019-12-24 | 2020-05-01 | 广东工业大学 | 一种超声电化学复合的晶片清洗装置及其清洗方法 |
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JP2000216126A (ja) * | 1999-01-22 | 2000-08-04 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法およびその装置 |
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JP2730756B2 (ja) * | 1988-04-13 | 1998-03-25 | 日立建機株式会社 | 超音波探触子及びその製造方法 |
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US5894452A (en) * | 1994-10-21 | 1999-04-13 | The Board Of Trustees Of The Leland Stanford Junior University | Microfabricated ultrasonic immersion transducer |
JPH1154471A (ja) * | 1997-08-05 | 1999-02-26 | Tokyo Electron Ltd | 処理装置及び処理方法 |
US20030062071A1 (en) * | 2001-09-28 | 2003-04-03 | Sorbo Nelson W. | Dense-phase fluid cleaning system utilizing ultrasonic transducers |
KR20040003714A (ko) * | 2002-07-03 | 2004-01-13 | (주)케이.씨.텍 | 웨이퍼 세정 장치 |
US20040009740A1 (en) * | 2002-07-12 | 2004-01-15 | Applied Materials, Inc. | Method and composition for chemical polishing |
KR100551413B1 (ko) * | 2003-08-11 | 2006-02-09 | 동부아남반도체 주식회사 | 양면 메가소닉 세정장치 |
JP4519541B2 (ja) * | 2004-06-24 | 2010-08-04 | 株式会社東芝 | 超音波洗浄装置 |
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TWI367790B (en) | 2012-07-11 |
CN101391255A (zh) | 2009-03-25 |
US20090071504A1 (en) | 2009-03-19 |
KR100887226B1 (ko) | 2009-03-06 |
JP4914413B2 (ja) | 2012-04-11 |
US8402980B2 (en) | 2013-03-26 |
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CN101391255B (zh) | 2010-09-22 |
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