TWI367790B - Apparatus and method of generating ultrasonic vibration and apparatus and method of cleaning a wafer using the same - Google Patents

Apparatus and method of generating ultrasonic vibration and apparatus and method of cleaning a wafer using the same

Info

Publication number
TWI367790B
TWI367790B TW097135011A TW97135011A TWI367790B TW I367790 B TWI367790 B TW I367790B TW 097135011 A TW097135011 A TW 097135011A TW 97135011 A TW97135011 A TW 97135011A TW I367790 B TWI367790 B TW I367790B
Authority
TW
Taiwan
Prior art keywords
wafer
cleaning
same
ultrasonic vibration
generating ultrasonic
Prior art date
Application number
TW097135011A
Other languages
English (en)
Other versions
TW200918189A (en
Inventor
Young-Ki Ahn
Jae-Jeong Jeong
Bo-Ram-Chan Sung
Original Assignee
Semes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semes Co Ltd filed Critical Semes Co Ltd
Publication of TW200918189A publication Critical patent/TW200918189A/zh
Application granted granted Critical
Publication of TWI367790B publication Critical patent/TWI367790B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • GPHYSICS
    • G10MUSICAL INSTRUMENTS; ACOUSTICS
    • G10KSOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/02Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
TW097135011A 2007-09-19 2008-09-12 Apparatus and method of generating ultrasonic vibration and apparatus and method of cleaning a wafer using the same TWI367790B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070095008A KR100887226B1 (ko) 2007-09-19 2007-09-19 초음파 진동 생성 장치 및 방법 그리고 웨이퍼 세정 장치및 방법

Publications (2)

Publication Number Publication Date
TW200918189A TW200918189A (en) 2009-05-01
TWI367790B true TWI367790B (en) 2012-07-11

Family

ID=40453162

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097135011A TWI367790B (en) 2007-09-19 2008-09-12 Apparatus and method of generating ultrasonic vibration and apparatus and method of cleaning a wafer using the same

Country Status (5)

Country Link
US (1) US8402980B2 (zh)
JP (1) JP4914413B2 (zh)
KR (1) KR100887226B1 (zh)
CN (1) CN101391255B (zh)
TW (1) TWI367790B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4965485B2 (ja) * 2008-02-29 2012-07-04 東京応化工業株式会社 処理液浸透ユニットおよび処理装置
JP5449953B2 (ja) * 2009-09-29 2014-03-19 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
TWI490931B (zh) * 2009-10-05 2015-07-01 Tokyo Electron Ltd 超音波清洗裝置、超音波清洗方法、及記錄有用來執行此超音波清洗方法之電腦程式的記錄媒體
US7918309B1 (en) * 2010-07-07 2011-04-05 Robert Kenneth Vierra Apparatus for producing a continuous sonic boom
CN102496591B (zh) * 2011-12-30 2016-04-06 上海集成电路研发中心有限公司 晶圆的清洗装置及清洗方法
TWI721080B (zh) * 2017-01-09 2021-03-11 大陸商盛美半導體設備(上海)股份有限公司 用來清洗襯底的裝置以及高溫化學溶液供液系統
KR102152906B1 (ko) * 2018-11-20 2020-09-09 세메스 주식회사 본딩 장치 및 본딩 방법
CN111092033A (zh) * 2019-12-24 2020-05-01 广东工业大学 一种超声电化学复合的晶片清洗装置及其清洗方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2730756B2 (ja) * 1988-04-13 1998-03-25 日立建機株式会社 超音波探触子及びその製造方法
US5511296A (en) * 1994-04-08 1996-04-30 Hewlett Packard Company Method for making integrated matching layer for ultrasonic transducers
US5894452A (en) * 1994-10-21 1999-04-13 The Board Of Trustees Of The Leland Stanford Junior University Microfabricated ultrasonic immersion transducer
JPH1154471A (ja) * 1997-08-05 1999-02-26 Tokyo Electron Ltd 処理装置及び処理方法
JP2000216126A (ja) 1999-01-22 2000-08-04 Dainippon Screen Mfg Co Ltd 基板洗浄方法およびその装置
US20030062071A1 (en) * 2001-09-28 2003-04-03 Sorbo Nelson W. Dense-phase fluid cleaning system utilizing ultrasonic transducers
KR20040003714A (ko) * 2002-07-03 2004-01-13 (주)케이.씨.텍 웨이퍼 세정 장치
US20040009740A1 (en) * 2002-07-12 2004-01-15 Applied Materials, Inc. Method and composition for chemical polishing
KR100551413B1 (ko) * 2003-08-11 2006-02-09 동부아남반도체 주식회사 양면 메가소닉 세정장치
JP4519541B2 (ja) * 2004-06-24 2010-08-04 株式会社東芝 超音波洗浄装置

Also Published As

Publication number Publication date
JP2009076916A (ja) 2009-04-09
CN101391255A (zh) 2009-03-25
US20090071504A1 (en) 2009-03-19
KR100887226B1 (ko) 2009-03-06
JP4914413B2 (ja) 2012-04-11
US8402980B2 (en) 2013-03-26
TW200918189A (en) 2009-05-01
CN101391255B (zh) 2010-09-22

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