KR100870315B1 - 반도체 소자의 제조방법 - Google Patents
반도체 소자의 제조방법 Download PDFInfo
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- KR100870315B1 KR100870315B1 KR1020020042145A KR20020042145A KR100870315B1 KR 100870315 B1 KR100870315 B1 KR 100870315B1 KR 1020020042145 A KR1020020042145 A KR 1020020042145A KR 20020042145 A KR20020042145 A KR 20020042145A KR 100870315 B1 KR100870315 B1 KR 100870315B1
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- metal layer
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- 238000000034 method Methods 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 117
- 239000002184 metal Substances 0.000 claims abstract description 117
- 230000004888 barrier function Effects 0.000 claims abstract description 63
- 238000005530 etching Methods 0.000 claims abstract description 50
- 238000009792 diffusion process Methods 0.000 claims abstract description 45
- 239000003990 capacitor Substances 0.000 claims abstract description 41
- 239000010410 layer Substances 0.000 claims description 176
- 239000011229 interlayer Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000010949 copper Substances 0.000 abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 42
- 229910052802 copper Inorganic materials 0.000 abstract description 41
- 239000012212 insulator Substances 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 30
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 230000009977 dual effect Effects 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 229910019001 CoSi Inorganic materials 0.000 description 4
- 229910004491 TaAlN Inorganic materials 0.000 description 4
- 229910004166 TaN Inorganic materials 0.000 description 4
- 229910004200 TaSiN Inorganic materials 0.000 description 4
- 229910008482 TiSiN Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (11)
- (a) 하부 구조물층이 형성된 반도체 기판 상에 하부전극을 형성하는 단계;(b) 전체 구조 상부에 유전체막을 형성하는 단계;(c) 상기 유전체막중 일부의 두께를 제어하고, 이를 통해 이 부위에서의 정전용량을 제어하기 위하여, 제1 식각공정을 통해 상기 유전체막의 일부를 식각하는 단계; 및(d) 전체 구조 상부에 금속층을 증착한후, 상기 제1 식각공정시 사용되는 포토 마스크를 이용한 제2 식각공정을 실시하여, 상기 (c)단계에서 식각되는 상기 유전체막의 일부와 대응되는 부위에 상부전극을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 유전체막은, Si3N4 또는 SiC로 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 제1 식각공정은, 상기 포토마스크를 이용한 포토리소그래피 공정과, 건식방식 또는 습식방식의 에치백공정을 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 제1 식각공정의 식각타겟은, 상기 유전체막을 Si3N4 로 형성할 경우에, 100 내지 700Å의 두께로 하고,상기 유전체막을 SiC로 형성할 경우에, 100 내지 500Å의 두께로 하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 정전용량은, 0.1×10-15F/㎛2 내지 5×10-15F/㎛2인 것을 특징으로 하는 반도체 소자의 제조방법.
- (a) 하부 구조물층이 형성된 반도체 기판 상에 제1 금속층을 형성하는 단계;(b) 전체 구조 상부에 제1 층간절연막을 형성하는 단계;(c) 상기 제1 금속층의 일부가 노출되도록, 상기 제1 층간절연막에 대하여 식각공정을 실시하여 제1 콘택홀을 형성하는 단계;(d) 캐패시터의 하부전극 및 배선층으로 기능하기 위하여, 상기 제1 콘택홀을 매립하도록, 전체 구조 상부에 제2 금속층을 형성하는 단계;(e) 상기 제2 금속층에 포함된 원자의 확산을 방지하기 위하여, 전체 구조 상부에 확산 배리어층을 형성하는 단계;(f) 상기 확산 배리어층의 제1 부위의 두께를 제어하고, 이를 통해 상기 제1 부위는 캐패시터의 유전체막으로 기능하도록 하고, 다른 제2 부위는 상기 제2 금속층의 배리어막으로 기능하도록 하기 위하여, 제1 식각공정을 통해 상기 제1 부위를 식각하는 단계;(g) 전체 구조 상부에 제2 층간절연막을 형성한 후, 상기 제2 층간절연막에 대하여 제2 식각공정을 실시하여, 상기 제1 부위가 노출되도록 캐패시터의 상부전극용 제2 콘택홀을 형성하는 동시에, 상기 제2 부위중 일부가 노출되도록 배선층용 제3 콘택홀을 형성하는 단계; 및(h) 상기 제2 콘택홀 및 제3 콘택홀을 매립하도록, 전체 구조 상부에 금속층을 형성하여, 상기 제2 콘택홀에는 캐패시터의 상부전극을 형성하고, 상기 제3 콘택홀에는 제3 금속층을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 유전체막은, Si3N4 또는 SiC로 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 제1 식각공정은, 에치백공정으로, 건식방식 또는 습식방식을 이용하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 제1 식각공정의 식각타겟은, 상기 유전체막을 Si3N4 로 형성할 경우에, 100 내지 700Å의 두께로 하고,상기 유전체막을 SiC로 형성할 경우에, 100 내지 500Å의 두께로 하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 캐패시터의 유전체막은, 정전용량이 0.1×10-15F/㎛2 내지 5×10-15F/㎛2인 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 6 항에 있어서,상기 (e)단계후, 상기 확산 배리어층의 유전특성을 향상시키고, 배리어 특성을 향상시키기 위하여,상기 확산 배리어층에 대하여, NH3 가스를 이용한 플라즈마처리, O2 가스를 이용한 플라즈마처리 또는 O3를 이용한 어닐링공정을 실시하는 단계를 더 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
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KR100853092B1 (ko) * | 2006-08-29 | 2008-08-19 | 동부일렉트로닉스 주식회사 | 반도체 소자의 캐패시터 제조 방법 |
KR100800823B1 (ko) | 2006-11-15 | 2008-02-04 | 동부일렉트로닉스 주식회사 | Mim 커패시터를 갖는 반도체 소자의 배선 제조 방법 |
Citations (7)
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KR960002486A (ko) * | 1994-06-15 | 1996-01-26 | 김주용 | 반도체 소자의 다중 금속층 형성방법 |
KR20000042442A (ko) * | 1998-12-24 | 2000-07-15 | 김영환 | 티타늄 알루미늄 질소 합금막을 상부전극의확산방지막으로서이용하는 캐패시터 제조 방법 |
JP2002026145A (ja) * | 2000-06-19 | 2002-01-25 | Hynix Semiconductor Inc | キャパシタ電極と接するプラグを有する半導体素子及びその製造方法 |
JP2002100742A (ja) * | 2000-08-11 | 2002-04-05 | Samsung Electronics Co Ltd | 同一な物質よりなる二重膜を含む多重膜としてカプセル化されたキャパシタを備えた半導体メモリ素子及びその製造方法 |
KR20020035748A (ko) * | 2000-11-07 | 2002-05-15 | 다카노 야스아키 | 반도체 장치 및 그 제조 방법 |
KR20020053551A (ko) * | 2000-12-27 | 2002-07-05 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
KR20020055889A (ko) * | 2000-12-29 | 2002-07-10 | 박종섭 | 반도체 소자의 금속 배선 및 커패시터 제조 방법 |
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JP2002100742A (ja) * | 2000-08-11 | 2002-04-05 | Samsung Electronics Co Ltd | 同一な物質よりなる二重膜を含む多重膜としてカプセル化されたキャパシタを備えた半導体メモリ素子及びその製造方法 |
KR20020035748A (ko) * | 2000-11-07 | 2002-05-15 | 다카노 야스아키 | 반도체 장치 및 그 제조 방법 |
KR20020053551A (ko) * | 2000-12-27 | 2002-07-05 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
KR20020055889A (ko) * | 2000-12-29 | 2002-07-10 | 박종섭 | 반도체 소자의 금속 배선 및 커패시터 제조 방법 |
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