KR100841269B1 - Ⅲ족 질화물 반도체 다층구조물 - Google Patents
Ⅲ족 질화물 반도체 다층구조물 Download PDFInfo
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- KR100841269B1 KR100841269B1 KR20067013720A KR20067013720A KR100841269B1 KR 100841269 B1 KR100841269 B1 KR 100841269B1 KR 20067013720 A KR20067013720 A KR 20067013720A KR 20067013720 A KR20067013720 A KR 20067013720A KR 100841269 B1 KR100841269 B1 KR 100841269B1
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- KR
- South Korea
- Prior art keywords
- group iii
- nitride semiconductor
- layer
- substrate
- iii nitride
- Prior art date
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004017368 | 2004-01-26 | ||
JPJP-P-2004-00017368 | 2004-01-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060112685A KR20060112685A (ko) | 2006-11-01 |
KR100841269B1 true KR100841269B1 (ko) | 2008-06-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR20067013720A KR100841269B1 (ko) | 2004-01-26 | 2005-01-25 | Ⅲ족 질화물 반도체 다층구조물 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100841269B1 (zh) |
CN (1) | CN100524624C (zh) |
TW (1) | TWI258873B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101066135B1 (ko) * | 2006-05-10 | 2011-09-20 | 쇼와 덴코 가부시키가이샤 | Ⅲ족 질화물 화합물 반도체 적층 구조체 |
TWI398016B (zh) * | 2007-02-07 | 2013-06-01 | Advanced Optoelectronic Tech | 具三族氮化合物半導體緩衝層之光電半導體元件及其製造方法 |
CN101452976B (zh) * | 2007-12-06 | 2011-03-30 | 泰谷光电科技股份有限公司 | 高亮度发光二极管结构 |
EP2589069A2 (en) * | 2010-06-30 | 2013-05-08 | Corning Incorporated | Method for finishing silicon on insulator substrates |
US20140027770A1 (en) * | 2011-04-08 | 2014-01-30 | Kazuyuki IIzuka | Semiconductor laminate and process for production thereof, and semiconductor element |
CN103107257B (zh) * | 2011-11-10 | 2015-09-09 | 展晶科技(深圳)有限公司 | Led磊晶结构及制程 |
CN108461589B (zh) * | 2018-03-27 | 2019-11-12 | 华灿光电(浙江)有限公司 | 一种发光二极管的外延片及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125608A (ja) * | 1996-10-24 | 1998-05-15 | Showa Denko Kk | 化合物半導体エピタキシャルウエハ |
JP2000319099A (ja) * | 1999-05-07 | 2000-11-21 | Hiroyuki Matsunami | SiCウエハ、SiC半導体デバイス、および、SiCウエハの製造方法 |
JP2002093726A (ja) * | 2000-07-13 | 2002-03-29 | Univ Meijo | 半導体素子の製造方法及び半導体素子 |
US20030207125A1 (en) * | 1999-10-22 | 2003-11-06 | Nec Corporation | Base substrate for crystal growth and manufacturing method of substrate by using the same |
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2005
- 2005-01-25 TW TW94102093A patent/TWI258873B/zh active
- 2005-01-25 CN CNB2005800023996A patent/CN100524624C/zh active Active
- 2005-01-25 KR KR20067013720A patent/KR100841269B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125608A (ja) * | 1996-10-24 | 1998-05-15 | Showa Denko Kk | 化合物半導体エピタキシャルウエハ |
JP2000319099A (ja) * | 1999-05-07 | 2000-11-21 | Hiroyuki Matsunami | SiCウエハ、SiC半導体デバイス、および、SiCウエハの製造方法 |
US20030207125A1 (en) * | 1999-10-22 | 2003-11-06 | Nec Corporation | Base substrate for crystal growth and manufacturing method of substrate by using the same |
JP2002093726A (ja) * | 2000-07-13 | 2002-03-29 | Univ Meijo | 半導体素子の製造方法及び半導体素子 |
Also Published As
Publication number | Publication date |
---|---|
CN100524624C (zh) | 2009-08-05 |
TW200531314A (en) | 2005-09-16 |
CN1910738A (zh) | 2007-02-07 |
TWI258873B (en) | 2006-07-21 |
KR20060112685A (ko) | 2006-11-01 |
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