KR100841269B1 - Ⅲ족 질화물 반도체 다층구조물 - Google Patents

Ⅲ족 질화물 반도체 다층구조물 Download PDF

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KR100841269B1
KR100841269B1 KR20067013720A KR20067013720A KR100841269B1 KR 100841269 B1 KR100841269 B1 KR 100841269B1 KR 20067013720 A KR20067013720 A KR 20067013720A KR 20067013720 A KR20067013720 A KR 20067013720A KR 100841269 B1 KR100841269 B1 KR 100841269B1
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South Korea
Prior art keywords
group iii
nitride semiconductor
layer
substrate
iii nitride
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KR20067013720A
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English (en)
Korean (ko)
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KR20060112685A (ko
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야스히토 우라시마
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쇼와 덴코 가부시키가이샤
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Publication of KR20060112685A publication Critical patent/KR20060112685A/ko
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KR20067013720A 2004-01-26 2005-01-25 Ⅲ족 질화물 반도체 다층구조물 KR100841269B1 (ko)

Applications Claiming Priority (2)

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JP2004017368 2004-01-26
JPJP-P-2004-00017368 2004-01-26

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KR20060112685A KR20060112685A (ko) 2006-11-01
KR100841269B1 true KR100841269B1 (ko) 2008-06-25

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KR (1) KR100841269B1 (zh)
CN (1) CN100524624C (zh)
TW (1) TWI258873B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101066135B1 (ko) * 2006-05-10 2011-09-20 쇼와 덴코 가부시키가이샤 Ⅲ족 질화물 화합물 반도체 적층 구조체
TWI398016B (zh) * 2007-02-07 2013-06-01 Advanced Optoelectronic Tech 具三族氮化合物半導體緩衝層之光電半導體元件及其製造方法
CN101452976B (zh) * 2007-12-06 2011-03-30 泰谷光电科技股份有限公司 高亮度发光二极管结构
EP2589069A2 (en) * 2010-06-30 2013-05-08 Corning Incorporated Method for finishing silicon on insulator substrates
US20140027770A1 (en) * 2011-04-08 2014-01-30 Kazuyuki IIzuka Semiconductor laminate and process for production thereof, and semiconductor element
CN103107257B (zh) * 2011-11-10 2015-09-09 展晶科技(深圳)有限公司 Led磊晶结构及制程
CN108461589B (zh) * 2018-03-27 2019-11-12 华灿光电（浙江）有限公司 一种发光二极管的外延片及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125608A (ja) * 1996-10-24 1998-05-15 Showa Denko Kk 化合物半導体エピタキシャルウエハ
JP2000319099A (ja) * 1999-05-07 2000-11-21 Hiroyuki Matsunami ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法
JP2002093726A (ja) * 2000-07-13 2002-03-29 Univ Meijo 半導体素子の製造方法及び半導体素子
US20030207125A1 (en) * 1999-10-22 2003-11-06 Nec Corporation Base substrate for crystal growth and manufacturing method of substrate by using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125608A (ja) * 1996-10-24 1998-05-15 Showa Denko Kk 化合物半導体エピタキシャルウエハ
JP2000319099A (ja) * 1999-05-07 2000-11-21 Hiroyuki Matsunami ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法
US20030207125A1 (en) * 1999-10-22 2003-11-06 Nec Corporation Base substrate for crystal growth and manufacturing method of substrate by using the same
JP2002093726A (ja) * 2000-07-13 2002-03-29 Univ Meijo 半導体素子の製造方法及び半導体素子

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CN100524624C (zh) 2009-08-05
TW200531314A (en) 2005-09-16
CN1910738A (zh) 2007-02-07
TWI258873B (en) 2006-07-21
KR20060112685A (ko) 2006-11-01

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